Doping structures

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H01L29/157

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/157Doping structures

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure comprising p-type N-face GAN-based semicond...
- Patent number 12,080,786
- Issue date Sep 3, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 11,990,518
- Issue date May 21, 2024
- United Microelectronics Corp.
- Chia-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure having super-lattice laminates
- Patent number 11,923,454
- Issue date Mar 5, 2024
- GlobalWafers Co., Ltd.
- Wei-Jie Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method for the semiconduc...
- Patent number 11,876,129
- Issue date Jan 16, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reprogrammable quantum processor architecture
- Patent number 11,822,163
- Issue date Nov 21, 2023
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 11,817,356
- Issue date Nov 14, 2023
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,777,023
- Issue date Oct 3, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Weixing Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate walls for quantum dot devices
- Patent number 11,749,721
- Issue date Sep 5, 2023
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stacked high barrier III-V power semiconductor diode
- Patent number 11,715,766
- Issue date Aug 1, 2023
- Azur Space Solar Power GmbH
- Daniel Fuhrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked, high-blocking InGaAs semiconductor power diode
- Patent number 11,699,722
- Issue date Jul 11, 2023
- AZUR SPACE
- Daniel Fuhrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reprogrammable quantum processor architecture incorporating quantum...
- Patent number 11,635,642
- Issue date Apr 25, 2023
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure having sets of III-V compound layers and me...
- Patent number 11,594,413
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with improved leakage
- Patent number 11,557,670
- Issue date Jan 17, 2023
- Infineon Technologies Austria AG
- Christian Koller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure for high-electron-mobility transistor and metho...
- Patent number 11,508,837
- Issue date Nov 22, 2022
- Xiamen Sanan Integrated Circuit Co., Ltd.
- Yutao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming super-junction corner and termination structure...
- Patent number 11,508,819
- Issue date Nov 22, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum-classic detection interface device
- Patent number 11,454,833
- Issue date Sep 27, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Finfet quantum structures utilizing quantum particle tunneling thro...
- Patent number 11,454,834
- Issue date Sep 27, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure having sets of III-V compound layers and me...
- Patent number 11,417,520
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor controlled quantum Pauli interaction gate
- Patent number 11,366,345
- Issue date Jun 21, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum structure incorporating phi angle control
- Patent number 11,327,345
- Issue date May 10, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
FinFET quantum structures utilizing quantum particle tunneling thro...
- Patent number 11,327,344
- Issue date May 10, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum structure incorporating theta angle control
- Patent number 11,300,816
- Issue date Apr 12, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum structure incorporating electric and magnetic field control
- Patent number 11,281,030
- Issue date Mar 22, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Reprogrammable quantum processor architecture incorporating calibra...
- Patent number 11,275,260
- Issue date Mar 15, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stacked, high-blocking InGaAs semiconductor power diode
- Patent number 11,257,909
- Issue date Feb 22, 2022
- Azur Space Solar Power GmbH
- Daniel Fuhrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked high barrier III-V power semiconductor diode
- Patent number 11,245,012
- Issue date Feb 8, 2022
- Azur Space Solar Power GmbH
- Daniel Fuhrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,227,804
- Issue date Jan 18, 2022
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar quantum structures utilizing quantum particle tunneling thro...
- Patent number 11,214,484
- Issue date Jan 4, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Reprogrammable quantum processor architecture incorporating quantum...
- Patent number 11,203,526
- Issue date Dec 21, 2021
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor crystal substrate, infrared detector, and method for...
- Patent number 11,152,210
- Issue date Oct 19, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TIN AS NUCLEAR SPIN QUBIT IN SILICON
- Publication number 20240413226
- Publication date Dec 12, 2024
- National Technology & Engineering Solutions of Sandia, LLC
- Wayne Witzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION
- Publication number 20240379877
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Chun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE
- Publication number 20240266403
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240258379
- Publication date Aug 1, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabricating Method of Semiconductor Device
- Publication number 20240258378
- Publication date Aug 1, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE INC...
- Publication number 20230343830
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Boram KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20230335597
- Publication date Oct 19, 2023
- Huawei Technologies Co., Ltd
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE
- Publication number 20230317796
- Publication date Oct 5, 2023
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARTRIDGE FOR INSPECTION
- Publication number 20230260856
- Publication date Aug 17, 2023
- VueReal Inc.
- Gholamreza CHAJI
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING THE SAME
- Publication number 20230207617
- Publication date Jun 29, 2023
- ENKRIS SEMICONDUCTOR (WUXI), LTD.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHO...
- Publication number 20230104038
- Publication date Apr 6, 2023
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- BOTING LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230009426
- Publication date Jan 12, 2023
- HYUNDAI MOBIS CO., LTD.
- Sin A KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK...
- Publication number 20220376047
- Publication date Nov 24, 2022
- ATOMERA INCORPORATED
- ROBERT J. MEARS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220376053
- Publication date Nov 24, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- KING YUEN WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface-Doped Channels for Threshold Voltage Modulation
- Publication number 20220359768
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Chun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE STRUCTURE
- Publication number 20220344474
- Publication date Oct 27, 2022
- UNITED MICROELECTRONICS CORP.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Type III-V Semiconductor Device with Improved Leakage
- Publication number 20220285539
- Publication date Sep 8, 2022
- Infineon Technologies Austria AG
- Christian Koller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Fabricating Method Thereof
- Publication number 20220285500
- Publication date Sep 8, 2022
- UNITED MICROELECTRONICS CORP.
- Chia-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPROGRAMMABLE QUANTUM PROCESSOR ARCHITECTURE INCORPORATING QUANTUM...
- Publication number 20220137439
- Publication date May 5, 2022
- equal1.labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Application
STACKED, HIGH-BLOCKING INGAAS SEMICONDUCTOR POWER DIODE
- Publication number 20220140088
- Publication date May 5, 2022
- AZUR SPACE SOLAR POWER GMBH
- Daniel FUHRMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED HIGH BARRIER III-V POWER SEMICONDUCTOR DIODE
- Publication number 20220115501
- Publication date Apr 14, 2022
- AZUR SPACE SOLAR POWER GMBH
- Daniel FUHRMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220115272
- Publication date Apr 14, 2022
- Murata Manufacturing Co., Ltd.
- Yasunari UMEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL OXIDATION FOR GATE ALL AROUND NANOSHEET I/O DEVICE
- Publication number 20220037529
- Publication date Feb 3, 2022
- Applied Materials, Inc.
- Myungsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE HAVING SUPER-LATTICE LAMINATES
- Publication number 20210336058
- Publication date Oct 28, 2021
- GLOBALWAFERS CO., LTD.
- WEI-JIE SIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-TRAPPING LAYERS FOR III-V SEMICONDUCTOR DEVICES
- Publication number 20210280703
- Publication date Sep 9, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Bartlomiej J. Pawlak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...
- Publication number 20210257461
- Publication date Aug 19, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...
- Publication number 20210143009
- Publication date May 13, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH STRAINED SUPERLATTICE AS SOURCE/DRAIN REGION
- Publication number 20210057579
- Publication date Feb 25, 2021
- UNITED MICROELECTRONICS CORP.
- Bo-Shiun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Manufacturing Method for the Semiconduc...
- Publication number 20210057560
- Publication date Feb 25, 2021
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Manufacturing Method for the Semiconduc...
- Publication number 20210050437
- Publication date Feb 18, 2021
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS

Doping structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure comprising p-type N-face GAN-based semicond...

Semiconductor device and fabricating method thereof

Epitaxial structure having super-lattice laminates

Semiconductor structure and manufacturing method for the semiconduc...

Reprogrammable quantum processor architecture

Semiconductor device

Semiconductor device and method for manufacturing the same

Gate walls for quantum dot devices

Stacked high barrier III-V power semiconductor diode

Stacked, high-blocking InGaAs semiconductor power diode

Reprogrammable quantum processor architecture incorporating quantum...

Semiconductor structure having sets of III-V compound layers and me...

Type III-V semiconductor device with improved leakage

Epitaxial structure for high-electron-mobility transistor and metho...

Method for forming super-junction corner and termination structure...

Quantum-classic detection interface device

Finfet quantum structures utilizing quantum particle tunneling thro...

Semiconductor structure having sets of III-V compound layers and me...

Semiconductor controlled quantum Pauli interaction gate

Quantum structure incorporating phi angle control

FinFET quantum structures utilizing quantum particle tunneling thro...

Quantum structure incorporating theta angle control

Quantum structure incorporating electric and magnetic field control

Reprogrammable quantum processor architecture incorporating calibra...

Stacked, high-blocking InGaAs semiconductor power diode

Stacked high barrier III-V power semiconductor diode

Semiconductor device

Planar quantum structures utilizing quantum particle tunneling thro...

Reprogrammable quantum processor architecture incorporating quantum...

Semiconductor crystal substrate, infrared detector, and method for...

Patents Applicationslast 30 patents

TIN AS NUCLEAR SPIN QUBIT IN SILICON

SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION

BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE

SEMICONDUCTOR DEVICE

Fabricating Method of Semiconductor Device

NITRIDE SEMICONDUCTOR BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE INC...

GALLIUM NITRIDE POWER TRANSISTOR

NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE

CARTRIDGE FOR INSPECTION

SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING THE SAME

EPITAXIAL STRUCTURE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHO...

POWER SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Surface-Doped Channels for Threshold Voltage Modulation

SUPERLATTICE STRUCTURE

Type III-V Semiconductor Device with Improved Leakage

Semiconductor Device and Fabricating Method Thereof

REPROGRAMMABLE QUANTUM PROCESSOR ARCHITECTURE INCORPORATING QUANTUM...

STACKED, HIGH-BLOCKING INGAAS SEMICONDUCTOR POWER DIODE

STACKED HIGH BARRIER III-V POWER SEMICONDUCTOR DIODE

SEMICONDUCTOR DEVICE

CONFORMAL OXIDATION FOR GATE ALL AROUND NANOSHEET I/O DEVICE

EPITAXIAL STRUCTURE HAVING SUPER-LATTICE LAMINATES

CHARGE-TRAPPING LAYERS FOR III-V SEMICONDUCTOR DEVICES

METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...

SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...

TRANSISTOR WITH STRAINED SUPERLATTICE AS SOURCE/DRAIN REGION

Semiconductor Structure and Manufacturing Method for the Semiconduc...

Semiconductor Structure and Manufacturing Method for the Semiconduc...