Doping the insulating layers

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H01L21/3115

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/3115Doping the insulating layers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for forming ultra-shallow junction
- Patent number 12,165,876
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jian Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanosheet gate-all-around device structures
- Patent number 12,166,042
- Issue date Dec 10, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modifying a strain state of at least one semiconductor l...
- Patent number 12,154,786
- Issue date Nov 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damage implantation of cap layer
- Patent number 12,154,987
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of a semiconductor device and method of forming same
- Patent number 12,154,831
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid fin structure of semiconductor device and method of forming...
- Patent number 12,148,672
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and methods of forming same
- Patent number 12,132,107
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with dielectric stressor
- Patent number 12,132,115
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi-Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of modulating stress of dielectric layers
- Patent number 12,125,911
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,125,706
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,125,908
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ling Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,125,876
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Cheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanism for finFET well doping
- Patent number 12,112,975
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly etch selective amorphous carbon film
- Patent number 12,112,949
- Issue date Oct 8, 2024
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Strained gate semiconductor device having an interlayer dielectric...
- Patent number 12,100,767
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma processing apparatus and plasma processing method
- Patent number 12,094,687
- Issue date Sep 17, 2024
- HITACHI HIGH-TECH CORPORATION
- Masayuki Shiina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,087,834
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistors and method of forming same
- Patent number 12,087,587
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gate spacers with stepped sidewalls by remo...
- Patent number 12,087,841
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,080,751
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Han Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried metal for FinFET device and method
- Patent number 12,080,588
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Lei-Chun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal loss prevention using implantation
- Patent number 12,068,195
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Li-Chieh Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line-end extension method and device
- Patent number 12,062,543
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Min Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor by tilted implant...
- Patent number 12,062,707
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,058,858
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive features having varying resistance
- Patent number 12,057,392
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jia-En Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etch using material modification and RF pulsing
- Patent number 12,057,329
- Issue date Aug 6, 2024
- Applied Materials, Inc.
- Bhargav Citla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating nitrogen in dipole engineering for multi-threshold vo...
- Patent number 12,040,365
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming the spacers on lateral flanks of a transistor gat...
- Patent number 12,033,859
- Issue date Jul 9, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Valentin Bacquie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240420961
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Seunghoon CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240413005
- Publication date Dec 12, 2024
- NANYA TECHNOLOGY CORPORATION
- Jen-I LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...
- Publication number 20240413155
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLIZATION TEMPERATURE REDUCTION OF HIGH-K DIELECTRIC LAYER
- Publication number 20240405093
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shen-Yang LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURE
- Publication number 20240395875
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Structures Of Semiconductor Devices
- Publication number 20240395855
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pinyen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240397734
- Publication date Nov 28, 2024
- SK HYNIX INC.
- Jeong Myeong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240387661
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure of a Semiconductor Device and Method of Forming Same
- Publication number 20240387294
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION WINDOW ENLARGEMENT
- Publication number 20240387180
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387728
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MODULATING STRESS OF DIELECTRIC LAYERS
- Publication number 20240387729
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH DIELECTRIC STRESSOR
- Publication number 20240387740
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shi-Ning JU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Fin Structure of Semiconductor Device and Method of Forming...
- Publication number 20240387279
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANT INTO EUV METAL OXIDE PHOTORESIST MODULE TO REDUCE EUV DOSE
- Publication number 20240379376
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240371919
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Han LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240363707
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME
- Publication number 20240363351
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Metal for FinFET Device and Method
- Publication number 20240363393
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lei-Chun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE FEATURES HAVING VARYING RESISTANCE
- Publication number 20240355730
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-En Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SPACERS AND MANUFACTURING METHOD THEREOF
- Publication number 20240355898
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...
- Publication number 20240347606
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240332081
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Makoto TAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A GATE STRUCTURE
- Publication number 20240332089
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dipole-Engineered High-K Gate Dielectric and Method Forming Same
- Publication number 20240304449
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240297252
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volumeless Threshold Voltage Tuning for Stacked Device Structures
- Publication number 20240290662
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Teng CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRING DRIVER WITH DEEP TRENCH ISOLATIONS
- Publication number 20240274594
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Shyam Surthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MANAGEMENT FOR PRECISE SUBSTRATE -TO- SUBSTRATE BONDING
- Publication number 20240266186
- Publication date Aug 8, 2024
- Applied Materials, Inc.
- San-Kuei Lin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Doping the insulating layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for forming ultra-shallow junction

Stacked nanosheet gate-all-around device structures

Method for modifying a strain state of at least one semiconductor l...

Semiconductor device and method

Damage implantation of cap layer

Gate structure of a semiconductor device and method of forming same

Hybrid fin structure of semiconductor device and method of forming...

Semiconductor structure and methods of forming same

Semiconductor device structure with dielectric stressor

Method of modulating stress of dielectric layers

Semiconductor device and method of manufacture

Semiconductor device and method

Semiconductor device and method

Mechanism for finFET well doping

Highly etch selective amorphous carbon film

Strained gate semiconductor device having an interlayer dielectric...

Plasma processing apparatus and plasma processing method

Semiconductor structure

Gate structures in transistors and method of forming same

Method of manufacturing gate spacers with stepped sidewalls by remo...

Semiconductor device structure and methods of forming the same

Buried metal for FinFET device and method

Metal loss prevention using implantation

Line-end extension method and device

Method of manufacturing a field effect transistor by tilted implant...

Three-dimensional memory devices and methods for forming the same

Conductive features having varying resistance

Selective etch using material modification and RF pulsing

Incorporating nitrogen in dipole engineering for multi-threshold vo...

Method of forming the spacers on lateral flanks of a transistor gat...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...

CRYSTALLIZATION TEMPERATURE REDUCTION OF HIGH-K DIELECTRIC LAYER

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURE

Isolation Structures Of Semiconductor Devices

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Semiconductor Device and Method

Gate Structure of a Semiconductor Device and Method of Forming Same

DEPOSITION WINDOW ENLARGEMENT

SEMICONDUCTOR DEVICE AND METHOD

METHOD OF MODULATING STRESS OF DIELECTRIC LAYERS

SEMICONDUCTOR DEVICE STRUCTURE WITH DIELECTRIC STRESSOR

Hybrid Fin Structure of Semiconductor Device and Method of Forming...

SEMICONDUCTOR DEVICES

IMPLANT INTO EUV METAL OXIDE PHOTORESIST MODULE TO REDUCE EUV DOSE

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE

GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME

Buried Metal for FinFET Device and Method

CONDUCTIVE FEATURES HAVING VARYING RESISTANCE

FIELD EFFECT TRANSISTOR WITH SPACERS AND MANUFACTURING METHOD THEREOF

Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...

SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF FORMING A GATE STRUCTURE

Dipole-Engineered High-K Gate Dielectric and Method Forming Same

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Volumeless Threshold Voltage Tuning for Stacked Device Structures

STRING DRIVER WITH DEEP TRENCH ISOLATIONS

STRESS MANAGEMENT FOR PRECISE SUBSTRATE -TO- SUBSTRATE BONDING