Doping the insulating layers

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H01L21/3115

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/3115Doping the insulating layers

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming the spacers of a transistor gate
- Patent number 12,261,211
- Issue date Mar 25, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Nicolas Posseme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device
- Patent number 12,262,542
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device structure
- Patent number 12,250,833
- Issue date Mar 11, 2025
- NANYA TECHNOLOGY CORPORATION
- Yu-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and manufacturing methods of the same
- Patent number 12,225,725
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- So Hyeon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure
- Patent number 12,222,653
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Hui Weng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,224,327
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,218,013
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized stress modulation by implant to back of wafer
- Patent number 12,217,974
- Issue date Feb 4, 2025
- Applied Materials, Inc.
- Sony Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of semiconductor device and method of manufacture
- Patent number 12,211,701
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsan-Chun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Sacrificial layer for semiconductor process
- Patent number 12,205,994
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having source/drain regions including a plurality of...
- Patent number 12,205,988
- Issue date Jan 21, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kazuyuki Tomida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation method for reducing roughness of patterned resist...
- Patent number 12,198,931
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced flicker noise
- Patent number 12,191,374
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming ultra-shallow junction
- Patent number 12,165,876
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jian Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanosheet gate-all-around device structures
- Patent number 12,166,042
- Issue date Dec 10, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modifying a strain state of at least one semiconductor l...
- Patent number 12,154,786
- Issue date Nov 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damage implantation of cap layer
- Patent number 12,154,987
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of a semiconductor device and method of forming same
- Patent number 12,154,831
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid fin structure of semiconductor device and method of forming...
- Patent number 12,148,672
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and methods of forming same
- Patent number 12,132,107
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with dielectric stressor
- Patent number 12,132,115
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi-Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of modulating stress of dielectric layers
- Patent number 12,125,911
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,125,908
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ling Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,125,876
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Cheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,125,706
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanism for finFET well doping
- Patent number 12,112,975
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly etch selective amorphous carbon film
- Patent number 12,112,949
- Issue date Oct 8, 2024
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Strained gate semiconductor device having an interlayer dielectric...
- Patent number 12,100,767
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma processing apparatus and plasma processing method
- Patent number 12,094,687
- Issue date Sep 17, 2024
- HITACHI HIGH-TECH CORPORATION
- Masayuki Shiina
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NBTI REDUCTION AND RELIABILITY IMPROVEMENT FOR SELECTIVE LAYOUTS
- Publication number 20250113586
- Publication date Apr 3, 2025
- Intel Corporation
- Rahul PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Warpage Modulation Through Implantation and the Structures Thereof
- Publication number 20250062247
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yang-Chih Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DOPING CARBON IN THIN FILM ON WAFER
- Publication number 20250054771
- Publication date Feb 13, 2025
- HPSP Co., Ltd.
- Sung Kil CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS WITH IMPLANTED ALIGNMENT MARK AND METHODS OF MANUFACTURIN...
- Publication number 20250046730
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Andrew M. Bayless
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048674
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS
- Publication number 20250046619
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Guifu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEUTRAL STRESS DIAMOND-LIKE CARBON
- Publication number 20250046611
- Publication date Feb 6, 2025
- Applied Materials, Inc.
- Jialiang WANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH-PRESSURE WAFER PROCESSING METHOD USING DUAL HIGH-PRESSURE WAFE...
- Publication number 20250014928
- Publication date Jan 9, 2025
- HPSP Co., Ltd.
- Sung Kil CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR
- Publication number 20240426026
- Publication date Dec 26, 2024
- TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD.
- Fengwen MU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240420961
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Seunghoon CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240413005
- Publication date Dec 12, 2024
- NANYA TECHNOLOGY CORPORATION
- Jen-I LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...
- Publication number 20240413155
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLIZATION TEMPERATURE REDUCTION OF HIGH-K DIELECTRIC LAYER
- Publication number 20240405093
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shen-Yang LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURE
- Publication number 20240395875
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Structures Of Semiconductor Devices
- Publication number 20240395855
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pinyen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240397734
- Publication date Nov 28, 2024
- SK HYNIX INC.
- Jeong Myeong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240387661
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure of a Semiconductor Device and Method of Forming Same
- Publication number 20240387294
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION WINDOW ENLARGEMENT
- Publication number 20240387180
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387728
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MODULATING STRESS OF DIELECTRIC LAYERS
- Publication number 20240387729
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH DIELECTRIC STRESSOR
- Publication number 20240387740
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shi-Ning JU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Fin Structure of Semiconductor Device and Method of Forming...
- Publication number 20240387279
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANT INTO EUV METAL OXIDE PHOTORESIST MODULE TO REDUCE EUV DOSE
- Publication number 20240379376
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240371919
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Han LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240363707
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME
- Publication number 20240363351
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Metal for FinFET Device and Method
- Publication number 20240363393
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lei-Chun Chou
- H01 - BASIC ELECTRIC ELEMENTS

Doping the insulating layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of forming the spacers of a transistor gate

Ferroelectric memory device

Method for manufacturing semiconductor device structure

Semiconductor devices and manufacturing methods of the same

Method for forming semiconductor structure

Semiconductor device and method

Gate structures for semiconductor devices

Localized stress modulation by implant to back of wafer

Gate structure of semiconductor device and method of manufacture

Sacrificial layer for semiconductor process

FinFET device having source/drain regions including a plurality of...

Ion implantation method for reducing roughness of patterned resist...

Semiconductor device with reduced flicker noise

Method for forming ultra-shallow junction

Stacked nanosheet gate-all-around device structures

Method for modifying a strain state of at least one semiconductor l...

Semiconductor device and method

Damage implantation of cap layer

Gate structure of a semiconductor device and method of forming same

Hybrid fin structure of semiconductor device and method of forming...

Semiconductor structure and methods of forming same

Semiconductor device structure with dielectric stressor

Method of modulating stress of dielectric layers

Semiconductor device and method

Semiconductor device and method

Semiconductor device and method of manufacture

Mechanism for finFET well doping

Highly etch selective amorphous carbon film

Strained gate semiconductor device having an interlayer dielectric...

Plasma processing apparatus and plasma processing method

Patents Applicationslast 30 patents

NBTI REDUCTION AND RELIABILITY IMPROVEMENT FOR SELECTIVE LAYOUTS

Warpage Modulation Through Implantation and the Structures Thereof

METHOD FOR DOPING CARBON IN THIN FILM ON WAFER

APPARATUS WITH IMPLANTED ALIGNMENT MARK AND METHODS OF MANUFACTURIN...

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS

NEUTRAL STRESS DIAMOND-LIKE CARBON

HIGH-PRESSURE WAFER PROCESSING METHOD USING DUAL HIGH-PRESSURE WAFE...

COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...

CRYSTALLIZATION TEMPERATURE REDUCTION OF HIGH-K DIELECTRIC LAYER

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURE

Isolation Structures Of Semiconductor Devices

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Semiconductor Device and Method

Gate Structure of a Semiconductor Device and Method of Forming Same

DEPOSITION WINDOW ENLARGEMENT

SEMICONDUCTOR DEVICE AND METHOD

METHOD OF MODULATING STRESS OF DIELECTRIC LAYERS

SEMICONDUCTOR DEVICE STRUCTURE WITH DIELECTRIC STRESSOR

Hybrid Fin Structure of Semiconductor Device and Method of Forming...

SEMICONDUCTOR DEVICES

IMPLANT INTO EUV METAL OXIDE PHOTORESIST MODULE TO REDUCE EUV DOSE

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE

GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME

Buried Metal for FinFET Device and Method