Doping the insulating layers

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H01L21/3115

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/3115Doping the insulating layers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device with p-contact and doped insulation bloc...
- Patent number 11,949,006
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,948,994
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Byounghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,939
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorine incorporation method for nanosheet
- Patent number 11,915,937
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in semiconductor devices
- Patent number 11,908,702
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiang-Pi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,908,949
- Issue date Feb 20, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Yuki Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,901,421
- Issue date Feb 13, 2024
- Samsung Electronics Co., Ltd.
- Hokyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a FinFET by implanting a dielectric with a...
- Patent number 11,901,455
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,901,437
- Issue date Feb 13, 2024
- Marlin Semiconductor Limited
- Te-Chang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,888,024
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 11,881,508
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Kyungin Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques and apparatus for anisotropic stress compensation in sub...
- Patent number 11,875,995
- Issue date Jan 16, 2024
- Applied Materials, Inc.
- Scott Falk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor isolation structure and semiconduct...
- Patent number 11,869,802
- Issue date Jan 9, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Wei Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration methods to fabricate internal spacers for nanowire devices
- Patent number 11,869,939
- Issue date Jan 9, 2024
- Sony Group Corporation
- Seiyon Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit with nanosheet transistors with robust gate oxide
- Patent number 11,869,955
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Ni Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fine line patterning methods
- Patent number 11,862,465
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,862,694
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line-end extension method and device
- Patent number 11,854,807
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Min Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 11,854,906
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with material modification and low resistan...
- Patent number 11,854,871
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial layer for semiconductor process
- Patent number 11,848,361
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,837,660
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,830,927
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Hsien Wu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure formation method and mask
- Patent number 11,810,787
- Issue date Nov 7, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried metal for FinFET device and method
- Patent number 11,810,811
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Lei-Chun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Iodine-containing fluorocarbon and hydrofluorocarbon compounds for...
- Patent number 11,798,811
- Issue date Oct 24, 2023
- American Air Liquide, Inc.
- Fabrizio Marchegiani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random-access memory and fabrication method thereof
- Patent number 11,785,755
- Issue date Oct 10, 2023
- Semiconductor Manufacturing International (Beijing) Corporation
- Nan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dipole-engineered high-k gate dielectric and method forming same
- Patent number 11,784,052
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled doping in a gate dielectric layer
- Patent number 11,777,014
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 11,769,672
- Issue date Sep 26, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong Jin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CORRECTION OF GLOBAL CURVATURE DURING STRESS MANAGEMENT
- Publication number 20240105641
- Publication date Mar 28, 2024
- Applied Materials, Inc.
- Pradeep K. SUBRAHMANYAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE DIELECTRIC LAYER ENGINEERING FOR VIA VOID PREVENTION
- Publication number 20240105505
- Publication date Mar 28, 2024
- Applied Materials, Inc.
- Nicolas Louis BREIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINE-END EXTENSION METHOD AND DEVICE
- Publication number 20240087896
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Min HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures For Semiconductor Devices
- Publication number 20240071835
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION FOR INCREASED ADHESION WITH RESIST MATERIAL
- Publication number 20240071773
- Publication date Feb 29, 2024
- Applied Materials, Inc.
- Lei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial Layer for Semiconductor Process
- Publication number 20240072128
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH COMPOSITE INTERCONNECT STRUCTUR...
- Publication number 20240047359
- Publication date Feb 8, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH COMPOSITE INTERCONNECT STRUCTUR...
- Publication number 20240047358
- Publication date Feb 8, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240030314
- Publication date Jan 25, 2024
- Samsung Electronics Co., Ltd.
- Seungmin SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A DOPED HARDMASK
- Publication number 20240021433
- Publication date Jan 18, 2024
- Applied Materials, Inc.
- Scott FALK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240014294
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien WU
- B82 - NANO-TECHNOLOGY
Information Patent Application
CO-DOPING TO CONTROL WET ETCH RATE OF FCVD OXIDE LAYERS
- Publication number 20240006158
- Publication date Jan 4, 2024
- Applied Materials, Inc.
- Vikram M. Bhosle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230411474
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH GATE STACK
- Publication number 20230411492
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES
- Publication number 20230402291
- Publication date Dec 14, 2023
- Applied Materials, Inc.
- Steven C. H. HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
- Publication number 20230395371
- Publication date Dec 7, 2023
- TOKYO ELECTRON LIMITED
- Kazumasa IGARASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230387299
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF
- Publication number 20230387210
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Lin CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR MULTIPLE STEP DIRECTIONAL PATTERNING
- Publication number 20230386834
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Kai YANG
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
FORMATION METHOD OF SHALLOW TRENCH ISOLATION
- Publication number 20230377999
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Ying CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES
- Publication number 20230377901
- Publication date Nov 23, 2023
- Applied Materials, Inc.
- Steven C. H. HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLED DOPING IN A GATE DIELECTRIC LAYER
- Publication number 20230378329
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION WINDOW ENLARGEMENT
- Publication number 20230369055
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE
- Publication number 20230371274
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230369386
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Han LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dipole-Engineered High-K Gate Dielectric and Method Forming Same
- Publication number 20230360918
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230352339
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Hsin Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mechanism for FinFET Well Doping
- Publication number 20230343634
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-FORMING BARRIER FOR USE IN AIR GAP FORMATION
- Publication number 20230335438
- Publication date Oct 19, 2023
- TESSERA LLC
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FOR SEMICONDUCTOR DEVICE
- Publication number 20230326988
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting YEN
- H01 - BASIC ELECTRIC ELEMENTS

Doping the insulating layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power semiconductor device with p-contact and doped insulation bloc...

Semiconductor device and method of fabricating the same

Semiconductor device having buried gate structure and method for fa...

Fluorine incorporation method for nanosheet

Gate structures in semiconductor devices

Semiconductor device and manufacturing method thereof

Semiconductor devices

Method of manufacturing a FinFET by implanting a dielectric with a...

Semiconductor device and method for fabricating the same

Method of forming a semiconductor device

Method of fabricating a semiconductor device

Techniques and apparatus for anisotropic stress compensation in sub...

Method of forming semiconductor isolation structure and semiconduct...

Integration methods to fabricate internal spacers for nanowire devices

Integrated circuit with nanosheet transistors with robust gate oxide

Fine line patterning methods

Semiconductor device and method

Line-end extension method and device

Gate structures for semiconductor devices

Semiconductor structure with material modification and low resistan...

Sacrificial layer for semiconductor process

Semiconductor device and method

Method of manufacturing semiconductor device

Semiconductor structure formation method and mask

Buried metal for FinFET device and method

Iodine-containing fluorocarbon and hydrofluorocarbon compounds for...

Static random-access memory and fabrication method thereof

Dipole-engineered high-k gate dielectric and method forming same

Controlled doping in a gate dielectric layer

Semiconductor structure and forming method thereof

Patents Applicationslast 30 patents

CORRECTION OF GLOBAL CURVATURE DURING STRESS MANAGEMENT

MIDDLE OF LINE DIELECTRIC LAYER ENGINEERING FOR VIA VOID PREVENTION

LINE-END EXTENSION METHOD AND DEVICE

Gate Structures For Semiconductor Devices

ION IMPLANTATION FOR INCREASED ADHESION WITH RESIST MATERIAL

Sacrificial Layer for Semiconductor Process

SEMICONDUCTOR DEVICE STRUCTURE WITH COMPOSITE INTERCONNECT STRUCTUR...

SEMICONDUCTOR DEVICE STRUCTURE WITH COMPOSITE INTERCONNECT STRUCTUR...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

FORMING A DOPED HARDMASK

SEMICONDUCTOR DEVICE

CO-DOPING TO CONTROL WET ETCH RATE OF FCVD OXIDE LAYERS

Semiconductor Device and Method

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH GATE STACK

METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF

SYSTEM AND METHOD FOR MULTIPLE STEP DIRECTIONAL PATTERNING

FORMATION METHOD OF SHALLOW TRENCH ISOLATION

METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES

CONTROLLED DOPING IN A GATE DIELECTRIC LAYER

DEPOSITION WINDOW ENLARGEMENT

FERROELECTRIC MEMORY DEVICE

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Dipole-Engineered High-K Gate Dielectric and Method Forming Same

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Mechanism for FinFET Well Doping

SELF-FORMING BARRIER FOR USE IN AIR GAP FORMATION

INNER SPACER FOR SEMICONDUCTOR DEVICE