Double base diodes

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CPC
H01L29/705

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/705Double base diodes

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Patents Grantslast 30 patents

Information Patent Grant
Field plates on two opposed surfaces of double-base bidirectional b...
- Patent number 10,892,354
- Issue date Jan 12, 2021
- Ideal Power Inc.
- William C. Alexander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plates on two opposed surfaces of double-base bidirectional b...
- Patent number 10,580,885
- Issue date Mar 3, 2020
- IDEAL POWER, INC.
- William C. Alexander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plates on two opposed surfaces of double-base bidirectional b...
- Patent number 10,418,471
- Issue date Sep 17, 2019
- IDEAL POWER, INC.
- William C. Alexander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current switching transistor
- Patent number 9,601,604
- Issue date Mar 21, 2017
- PST Sensors (Proprietary) Limited
- David Thomas Britton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of producing bipolar transistors having emitter-base juncti...
- Patent number 9,281,375
- Issue date Mar 8, 2016
- Freescale Semiconductor Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistors having emitter-base junctions of varying depths...
- Patent number 8,791,546
- Issue date Jul 29, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of valley current in a unijunction transistor by electron i...
- Patent number 4,292,644
- Issue date Sep 29, 1981
- General Electric Company
- Hing C. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having two intersecting sub-diodes and transis...
- Patent number 4,182,965
- Issue date Jan 8, 1980
- Siemens Aktiengesellschaft
- Hans Pfleiderer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3903542
- Patent number 3,903,542
- Issue date Sep 2, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3325652
- Patent number 3,325,652
- Issue date Jun 13, 1967
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC COMPONENTS EMPLOYING FIELD IONIZATION
- Publication number 20240322019
- Publication date Sep 26, 2024
- Psiquantum, Corp.
- Gary Gibson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Plates on Two Opposed Surfaces of Double-Base Bidirectional B...
- Publication number 20200243674
- Publication date Jul 30, 2020
- IDEAL POWER, INC.
- William C. Alexander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Plates on Two Opposed Surfaces of Double-Base Bidirectional B...
- Publication number 20200058780
- Publication date Feb 20, 2020
- IDEAL POWER, INC.
- William C. Alexander
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
CURRENT SWITCHING TRANSISTOR
- Publication number 20150236140
- Publication date Aug 20, 2015
- PST SENSORS (PROPRIETARY) LIMITED
- David Thomas Britton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF PRODUCING BIPOLAR TRANSISTORS HAVING EMITTER-BASE JUNCTI...
- Publication number 20140308792
- Publication date Oct 16, 2014
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20120098096
- Publication date Apr 26, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS

Double base diodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Field plates on two opposed surfaces of double-base bidirectional b...

Field plates on two opposed surfaces of double-base bidirectional b...

Field plates on two opposed surfaces of double-base bidirectional b...

Current switching transistor

Methods of producing bipolar transistors having emitter-base juncti...

Bipolar transistors having emitter-base junctions of varying depths...

Control of valley current in a unijunction transistor by electron i...

Semiconductor device having two intersecting sub-diodes and transis...

3903542

3325652

Patents Applicationslast 30 patents

ELECTRONIC COMPONENTS EMPLOYING FIELD IONIZATION

Field Plates on Two Opposed Surfaces of Double-Base Bidirectional B...

Field Plates on Two Opposed Surfaces of Double-Base Bidirectional B...

CURRENT SWITCHING TRANSISTOR

METHODS OF PRODUCING BIPOLAR TRANSISTORS HAVING EMITTER-BASE JUNCTI...

BIPOLAR TRANSISTOR