Dual Gate Metal-Oxide-Semiconductor Field-Effect Transistor [DGMOSFET]

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H01L2924/13092

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

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H01L2924/13092Dual Gate Metal-Oxide-Semiconductor Field-Effect Transistor [DGMOSFET]

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Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating a semiconductor device comprising a paste la...
- Patent number 11,329,021
- Issue date May 10, 2022
- Infineon Technologies AG
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal gate CMOS with metal base layer and dummy gate s...
- Patent number 9,269,634
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE COMPRISING A PASTE LA...
- Publication number 20200161269
- Publication date May 21, 2020
- INFINEON TECHNOLOGIES AG
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELF ALIGNED METAL GATE CMOS
- Publication number 20130012009
- Publication date Jan 10, 2013
- International Business Machines Corporation (YT)
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELF-ALIGNED METAL GATE CMOS
- Publication number 20120292710
- Publication date Nov 22, 2012
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS