Dummy cell treatment Reference voltage generators

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G11C11/4099

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/4099Dummy cell treatment Reference voltage generators

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory circuit and method of operating same
- Patent number 12,217,792
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Atul Katoch
- G11 - INFORMATION STORAGE
Information Patent Grant
Dummy data-based read reference voltage search of NAND memory
- Patent number 12,211,547
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- Lu Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device with reference voltage circuit including...
- Patent number 12,205,633
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell and method of operating the same
- Patent number 12,205,632
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hon-Jarn Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having row decoder array architecture
- Patent number 12,198,753
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Seungyeon Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
High density memory with reference memory using grouped cells and c...
- Patent number 12,198,752
- Issue date Jan 14, 2025
- Macronix International Co., Ltd.
- Teng-Hao Yeh
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and operating method with operational amp...
- Patent number 12,190,942
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Seongjin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device performing sensing operation and method of operating...
- Patent number 12,190,973
- Issue date Jan 7, 2025
- SK Hynix Inc.
- Se Chun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory driver, memory system, and operating method
- Patent number 12,190,938
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Motoki Tamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having an electrically floating body tr...
- Patent number 12,185,523
- Issue date Dec 31, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND string utilizing floating body memory cell
- Patent number 12,171,093
- Issue date Dec 17, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory circuit and method
- Patent number 12,165,722
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods for row hammer counter mat
- Patent number 12,165,687
- Issue date Dec 10, 2024
- Micron Technology, Inc.
- Yuan He
- G11 - INFORMATION STORAGE
Information Patent Grant
Recognition system and SRAM cell thereof
- Patent number 12,159,663
- Issue date Dec 3, 2024
- NCKU Research and Development Foundation
- Wei-Li He
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Pipe register control signal generation circuit and semiconductor a...
- Patent number 12,159,661
- Issue date Dec 3, 2024
- SK hynix Inc.
- Gi Moon Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device
- Patent number 12,154,615
- Issue date Nov 26, 2024
- Kioxia Corporation
- Takeshi Sugimoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell and method of operating the same
- Patent number 12,154,618
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hon-Jarn Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Drift compensation for codewords in memory
- Patent number 12,136,456
- Issue date Nov 5, 2024
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing operations in memory
- Patent number 12,100,439
- Issue date Sep 24, 2024
- Micron Technology, Inc.
- Takamasa Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Computation in-memory using 6-transistor bit cells
- Patent number 12,094,524
- Issue date Sep 17, 2024
- Texas Instruments Incorporated
- Avishek Biswas
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Storage device and method of discharging an operating voltage
- Patent number 12,087,349
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Kyoungeun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier with digit line multiplexing
- Patent number 12,073,870
- Issue date Aug 27, 2024
- Micron Technology, Inc.
- Eric Carman
- G11 - INFORMATION STORAGE
Information Patent Grant
Internal voltage generation circuit and semiconductor memory appara...
- Patent number 12,068,019
- Issue date Aug 20, 2024
- SK hynix Inc.
- Chan Hui Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Volatile memory device
- Patent number 12,014,769
- Issue date Jun 18, 2024
- Samsung Electronics Co., Ltd.
- Jae Pil Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for determining an interface connection status
- Patent number 12,014,787
- Issue date Jun 18, 2024
- Micron Technology, Inc.
- Melissa I. Uribe
- G11 - INFORMATION STORAGE
Information Patent Grant
Recognition system and SRAM cell thereof
- Patent number 11,990,178
- Issue date May 21, 2024
- NCKU Research and Development Foundation
- Wei-Li He
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device and method
- Patent number 11,978,501
- Issue date May 7, 2024
- Kioxia Corporation
- Akiyuki Murayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and device for reading data in a nonvolatile memory device b...
- Patent number 11,972,791
- Issue date Apr 30, 2024
- Samsung Electronics Co., Ltd.
- Hyojung Jang
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier, memory, and method for controlling sense amplifier
- Patent number 11,929,112
- Issue date Mar 12, 2024
- ANHUI UNIVERSITY
- Chunyu Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Rapid tag invalidation circuit
- Patent number 11,929,114
- Issue date Mar 12, 2024
- Advanced Micro Devices, Inc.
- Russell Schreiber
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY REFRESH
- Publication number 20250061934
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- G11 - INFORMATION STORAGE
Information Patent Application
NAND String Utilizing Floating Body Memory Cell
- Publication number 20250063718
- Publication date Feb 20, 2025
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
DRIFT COMPENSATION FOR CODEWORDS IN MEMORY
- Publication number 20250046369
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFIER WITH DIGIT LINE MULTIPLEXING
- Publication number 20250037756
- Publication date Jan 30, 2025
- Micron Technology, Inc.
- Eric Carman
- G11 - INFORMATION STORAGE
Information Patent Application
COMPUTATION IN-MEMORY USING 6-TRANSISTOR BIT CELLS
- Publication number 20250029652
- Publication date Jan 23, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Avishek BISWAS
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOCAL I/O READ CIRCUIT IN MEMORY SYSTEM
- Publication number 20250022505
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Jiyun Li
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE PERFORMING TIMING SKEW AND OFFSET CALIBRATION
- Publication number 20250014632
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Jaehyeok Baek
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE REFRESH RATE GENERATOR
- Publication number 20250006245
- Publication date Jan 2, 2025
- Silicon Laboratories Inc.
- Gang Yuan
- G11 - INFORMATION STORAGE
Information Patent Application
8-T SRAM BITCELL FOR FPGA PROGRAMMING
- Publication number 20240428848
- Publication date Dec 26, 2024
- Xilinx, Inc.
- Nui CHONG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE FOR BIASING DUMMY GLOBAL BITLINE
- Publication number 20240363157
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- Kyoungmin Kim
- G11 - INFORMATION STORAGE
Information Patent Application
RAPID TAG INVALIDATION CIRCUIT
- Publication number 20240355380
- Publication date Oct 24, 2024
- ADVANCED MICRO DEVICES, INC.
- Russell Schreiber
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20240304237
- Publication date Sep 12, 2024
- STMicroelectronics International N.V.
- Christophe GONCALVES
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR DETERMINING AN INTERFACE CONNECTION STATUS
- Publication number 20240296897
- Publication date Sep 5, 2024
- Micron Technology, Inc.
- Melissa I. Uribe
- G11 - INFORMATION STORAGE
Information Patent Application
RECOGNITION SYSTEM AND SRAM CELL THEREOF
- Publication number 20240257864
- Publication date Aug 1, 2024
- NCKU RESEARCH AND DEVELOPMENT FOUNDATION
- Wei-Li He
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY DEVICE
- Publication number 20240242755
- Publication date Jul 18, 2024
- Samsung Electronics Co., Ltd.
- Changbum KIM
- G11 - INFORMATION STORAGE
Information Patent Application
REFERENCE VOLTAGE ADJUSTMENT FOR WORD LINE GROUPS
- Publication number 20240242760
- Publication date Jul 18, 2024
- Micron Technology, Inc.
- Tao Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE SUPPLY CIRCUIT, MEMORY DEVICE INCLUDING THE SAME, AND OPERA...
- Publication number 20240233804
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Jayang YOON
- G11 - INFORMATION STORAGE
Information Patent Application
DUMMY DATA-BASED READ REFERENCE VOLTAGE SEARCH OF NAND MEMORY
- Publication number 20240233813
- Publication date Jul 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Lu Guo
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE TO PRECHARGE BITLINES PRIOR TO SENSING MEMORY CELLS
- Publication number 20240212744
- Publication date Jun 27, 2024
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20240177766
- Publication date May 30, 2024
- SK HYNIX INC.
- Hee Youl LEE
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE REGULATOR, MEMORY DEVICE INCLUDING VOLTAGE REGULATOR, AND O...
- Publication number 20240161816
- Publication date May 16, 2024
- Samsung Electronics Co., Ltd.
- SEONGJIN KIM
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY AND REFERENCE CURRENT GENERATOR THEREOF
- Publication number 20240161814
- Publication date May 16, 2024
- EMEMORY TECHNOLOGY INC.
- Chih-Yang HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
High Gain Detector Techniques for Low Bandwidth Low Noise Phase-Loc...
- Publication number 20240146311
- Publication date May 2, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Michael Henderson Perrott
- G11 - INFORMATION STORAGE
Information Patent Application
RECOGNITION SYSTEM AND SRAM CELL THEREOF
- Publication number 20240127886
- Publication date Apr 18, 2024
- NCKU RESEARCH AND DEVELOPMENT FOUNDATION
- Wei-Li He
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SENSE AMPLIFIER CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240105253
- Publication date Mar 28, 2024
- Kabushiki Kaisha Toshiba
- Osamu Hirabayashi
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND CONTROL METHOD
- Publication number 20240079046
- Publication date Mar 7, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianquan Jia
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING SUB-WORDLINE DRIVER LOCATED BELOW MEMORY CE...
- Publication number 20240079047
- Publication date Mar 7, 2024
- Samsung Electronics Co., Ltd.
- Suhwan Choi
- G11 - INFORMATION STORAGE
Information Patent Application
DRIFT COMPENSATION FOR CODEWORDS IN MEMORY
- Publication number 20240071487
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM INCLUDING REFERENCE VOLTAGE GENERATOR AND READ METHOD THEREOF
- Publication number 20240071479
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- KYUWON CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20240071477
- Publication date Feb 29, 2024
- KIOXIA Corporation
- Kazutaka IKEGAMI
- G11 - INFORMATION STORAGE

Dummy cell treatment Reference voltage generators

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory circuit and method of operating same

Dummy data-based read reference voltage search of NAND memory

Non-volatile memory device with reference voltage circuit including...

Memory cell and method of operating the same

Memory device having row decoder array architecture

High density memory with reference memory using grouped cells and c...

Nonvolatile memory device and operating method with operational amp...

Memory device performing sensing operation and method of operating...

Memory driver, memory system, and operating method

Semiconductor memory device having an electrically floating body tr...

NAND string utilizing floating body memory cell

Non-volatile memory circuit and method

Apparatuses and methods for row hammer counter mat

Recognition system and SRAM cell thereof

Pipe register control signal generation circuit and semiconductor a...

Semiconductor storage device

Memory cell and method of operating the same

Drift compensation for codewords in memory

Sensing operations in memory

Computation in-memory using 6-transistor bit cells

Storage device and method of discharging an operating voltage

Sense amplifier with digit line multiplexing

Internal voltage generation circuit and semiconductor memory appara...

Volatile memory device

Techniques for determining an interface connection status

Recognition system and SRAM cell thereof

Semiconductor memory device and method

Method and device for reading data in a nonvolatile memory device b...

Sense amplifier, memory, and method for controlling sense amplifier

Rapid tag invalidation circuit

Patents Applicationslast 30 patents

MEMORY REFRESH

NAND String Utilizing Floating Body Memory Cell

DRIFT COMPENSATION FOR CODEWORDS IN MEMORY

SENSE AMPLIFIER WITH DIGIT LINE MULTIPLEXING

COMPUTATION IN-MEMORY USING 6-TRANSISTOR BIT CELLS

LOCAL I/O READ CIRCUIT IN MEMORY SYSTEM

MEMORY DEVICE PERFORMING TIMING SKEW AND OFFSET CALIBRATION

ADAPTIVE REFRESH RATE GENERATOR

8-T SRAM BITCELL FOR FPGA PROGRAMMING

MEMORY DEVICE FOR BIASING DUMMY GLOBAL BITLINE

RAPID TAG INVALIDATION CIRCUIT

MEMORY DEVICE

TECHNIQUES FOR DETERMINING AN INTERFACE CONNECTION STATUS

RECOGNITION SYSTEM AND SRAM CELL THEREOF

NON-VOLATILE MEMORY DEVICE

REFERENCE VOLTAGE ADJUSTMENT FOR WORD LINE GROUPS

VOLTAGE SUPPLY CIRCUIT, MEMORY DEVICE INCLUDING THE SAME, AND OPERA...

DUMMY DATA-BASED READ REFERENCE VOLTAGE SEARCH OF NAND MEMORY

MEMORY DEVICE TO PRECHARGE BITLINES PRIOR TO SENSING MEMORY CELLS

MEMORY DEVICE AND METHOD OF OPERATING THE SAME

VOLTAGE REGULATOR, MEMORY DEVICE INCLUDING VOLTAGE REGULATOR, AND O...

NON-VOLATILE MEMORY AND REFERENCE CURRENT GENERATOR THEREOF

High Gain Detector Techniques for Low Bandwidth Low Noise Phase-Loc...

RECOGNITION SYSTEM AND SRAM CELL THEREOF

SENSE AMPLIFIER CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE

NON-VOLATILE MEMORY DEVICE AND CONTROL METHOD

MEMORY DEVICE INCLUDING SUB-WORDLINE DRIVER LOCATED BELOW MEMORY CE...

DRIFT COMPENSATION FOR CODEWORDS IN MEMORY

SRAM INCLUDING REFERENCE VOLTAGE GENERATOR AND READ METHOD THEREOF

MEMORY SYSTEM