Electric field

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CPC
Y10S148/045

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/045Electric field

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Patents Grantslast 30 patents

Information Patent Grant
CVD apparatus
- Patent number 6,520,189
- Issue date Feb 18, 2003
- Semiconductor Energy Laboratory Co., Ltd.
- Takashi Inushima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
CVD apparatus
- Patent number 6,013,338
- Issue date Jan 11, 2000
- Semiconductor Energy Laboratory Co., Ltd.
- Takashi Inushima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making a high voltage planar edge termination structure
- Patent number 5,714,396
- Issue date Feb 3, 1998
- Motorola, Inc.
- Stephen Robb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage planar edge termination structure and method of making...
- Patent number 5,486,718
- Issue date Jan 23, 1996
- Motorola, Inc.
- Stephen Robb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor element
- Patent number 5,462,886
- Issue date Oct 31, 1995
- Fuji Xerox Co., Ltd.
- Yoshihiko Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a distributed light emitting diode flat-scr...
- Patent number 5,231,049
- Issue date Jul 27, 1993
- California Institute of Technology
- Charles F. Neugebauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for processing a fine pattern
- Patent number 5,116,782
- Issue date May 26, 1992
- Hitachi, Ltd.
- Hiroshi Yamaguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for processing semiconductor materials
- Patent number 5,079,187
- Issue date Jan 7, 1992
- The Regents of the University of California
- John F. Asmus
- B08 - CLEANING
Information Patent Grant
Method for forming functional deposited films by means of microwave...
- Patent number 5,061,511
- Issue date Oct 29, 1991
- Canon Kabushiki Kaisha
- Keishi Saitoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating a lateral semiconductor structure including f...
- Patent number 4,966,858
- Issue date Oct 30, 1990
- Motorola, Inc.
- Michael P. Masquelier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming functional deposited films by means of microwave...
- Patent number 4,957,772
- Issue date Sep 18, 1990
- Canon Kabushiki Kaisha
- Keishi Saitoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of depositing films using photo-CVD with chamber plasma clea...
- Patent number 4,950,624
- Issue date Aug 21, 1990
- Semiconductor Energy Laboratory Co., Ltd.
- Takashi Inuzima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for the formation of a functional deposited film containing...
- Patent number 4,914,052
- Issue date Apr 3, 1990
- Canon Kabushiki Kaisha
- Masahiro Kanai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for low temperature growth of silicon epitaxial layers using...
- Patent number 4,910,163
- Issue date Mar 20, 1990
- University of Connecticut
- Faquir C. Jain
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the formation of a functional deposited film containing...
- Patent number 4,908,329
- Issue date Mar 13, 1990
- Canon Kabushiki Kaisha
- Masahiro Kanai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the preparation of a multi-layer stacked junction typed...
- Patent number 4,900,694
- Issue date Feb 13, 1990
- Canon Kabushiki Kaisha
- Katsumi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating n-type and p-type microcrystalline semiconduc...
- Patent number 4,891,330
- Issue date Jan 2, 1990
- Energy Conversion Devices, Inc.
- Subhendu Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma pinch system
- Patent number 4,889,605
- Issue date Dec 26, 1989
- The Regents of the University of California
- John F. Asmus
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Remote plasma enhanced CVD method for growing an epitaxial semicond...
- Patent number 4,870,030
- Issue date Sep 26, 1989
- Research Triangle Institute, Inc.
- Robert J. Markunas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing an amorphous silicon semiconductor device usin...
- Patent number 4,800,174
- Issue date Jan 24, 1989
- Matsushita Electric Industrial Co., Ltd.
- Shinichiro Ishihara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of bonding semiconductor wafers
- Patent number 4,774,196
- Issue date Sep 27, 1988
- Siliconix Incorporated
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing high quality germanium-germanium nitride inter...
- Patent number 4,671,845
- Issue date Jun 9, 1987
- The United States of America as represented by the Secretary of the Navy
- Max N. Yoder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for vapor depositing a stoichiometric compound
- Patent number 4,286,545
- Issue date Sep 1, 1981
- Futaba Denshi Kogyo K.K.
- Toshinori Takagi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of coating with a stoichiometric compound
- Patent number 4,281,029
- Issue date Jul 28, 1981
- Toshinori Takagi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Insulating film, sheet, or plate material with metallic coating and...
- Patent number 4,091,138
- Issue date May 23, 1978
- Sumitomo Bakelite Company Limited
- Toshinori Takagi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective doping crystal growth method
- Patent number 4,086,108
- Issue date Apr 25, 1978
- Agency of Industrial Science and Technology
- Shunichi Gonda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing semiconductor device
- Patent number 4,066,527
- Issue date Jan 3, 1978
- Futaba Denshi Kogyo K.K.
- Toshinori Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Beam-plasma type ion source
- Patent number 3,999,072
- Issue date Dec 21, 1976
- Sharp Kabushiki Kaisha
- Toshinori Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High vacuum ion plating device
- Patent number 3,974,059
- Issue date Aug 10, 1976
- Yoichi Murayama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
3912826
- Patent number 3,912,826
- Issue date Oct 14, 1975
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
CVD apparatus
- Publication number 20030140941
- Publication date Jul 31, 2003
- Semiconductor Energy Laboratory Co., Ltd.
- Takashi Inushima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Electric field

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

CVD apparatus

CVD apparatus

Method of making a high voltage planar edge termination structure

High voltage planar edge termination structure and method of making...

Method of manufacturing a semiconductor element

Method of manufacturing a distributed light emitting diode flat-scr...

Method and apparatus for processing a fine pattern

Method for processing semiconductor materials

Method for forming functional deposited films by means of microwave...

Method of fabricating a lateral semiconductor structure including f...

Method for forming functional deposited films by means of microwave...

Method of depositing films using photo-CVD with chamber plasma clea...

Process for the formation of a functional deposited film containing...

Method for low temperature growth of silicon epitaxial layers using...

Process for the formation of a functional deposited film containing...

Process for the preparation of a multi-layer stacked junction typed...

Method of fabricating n-type and p-type microcrystalline semiconduc...

Plasma pinch system

Remote plasma enhanced CVD method for growing an epitaxial semicond...

Method for producing an amorphous silicon semiconductor device usin...

Method of bonding semiconductor wafers

Method for producing high quality germanium-germanium nitride inter...

Apparatus for vapor depositing a stoichiometric compound

Method of coating with a stoichiometric compound

Insulating film, sheet, or plate material with metallic coating and...

Selective doping crystal growth method

Method of producing semiconductor device

Beam-plasma type ion source

High vacuum ion plating device

3912826

Patents Applicationslast 30 patents

CVD apparatus