Claims
- 1. A microwave plasma chemical vapor deposition process for the formation of a functional deposited film on a substrate by means of a microwave plasma chemical vapor deposition conducted in the film-forming space of a substantially enclosed film-forming chamber, wherein a film-forming raw material gas is introduced into said film-forming space and microwave energy is applied thereinto to form discharge plasma causing decomposition of said film-forming raw material gas thereby forming said functional deposited film on the substrate, characterized by maintaining the gaseous pressure of said film-forming space at a value of 10 mTorr or less and applying into said film-forming space a microwave power 1.1 times or more the minimum microwave power required to maximize the deposition rate for a decomposed product produced from said film-forming raw material gas to form a deposited film.
- 2. The process according to claim 1, including supplying the film-forming raw material gas into the film-forming space employing a gas feed pipe capable of supplying the film-forming raw material gas into the film-forming space, said gas feed pipe being longitudinally installed in the film-forming chamber.
- 3. The process according to claim 2, including providing said gas feed pipe between a pair of cylindrical substrate holders in said film-forming space.
- 4. The process according to claim 1, including supplying the film-forming raw material gas into the film-forming space employing a plurality of gas feed pipes being longitudinally installed in the film-forming chamber, each of said gas feed pipes being capable of supplying the film-forming raw material gas into the film-forming space.
- 5. The process according to claim 4, including providing a plurality of pairs of cylindrical substrate holders in said film-forming space and providing said plurality of gas feed pipes between each pair of said cylindrical substrate holders.
- 6. The process according to claim 1 including providing a plurality of cylindrical substrates in said film-forming space, each said cylindrical substrate positioned on a cylindrical substrate holder.
Priority Claims (2)
Number |
Date |
Country |
Kind |
61-297421 |
Dec 1986 |
JPX |
|
61-296994 |
Dec 1986 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 287,666 filed Dec. 21, 1988, U.S. Pat. No. 4,957,772, which in turn is a continuation of application Ser. No. 130,448 filed Dec. 8, 1987, now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4517223 |
Ovshinsky et al. |
May 1985 |
|
4715927 |
Johncock et al. |
Dec 1987 |
|
Divisions (1)
|
Number |
Date |
Country |
Parent |
287666 |
Dec 1988 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
130448 |
Dec 1987 |
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