Electrodes; Multistep manufacturing processes therefor

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H01L29/40

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/40Electrodes; Multistep manufacturing processes therefor

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Patents Grantslast 30 patents

Information Patent Grant
Microelectronic devices including conductive structures
- Patent number 12,171,101
- Issue date Dec 17, 2024
- Micron Technology, Inc.
- Daniel Billingsley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive structures and methods of formation
- Patent number 12,170,331
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method and measurement method of semiconductor struct...
- Patent number 12,170,232
- Issue date Dec 17, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Fangfang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing three-dimensional memory devices with cond...
- Patent number 12,171,102
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual contact process with stacked metal layers
- Patent number 12,170,319
- Issue date Dec 17, 2024
- Intel Corporation
- Kevin Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with improved charge lateral migrat...
- Patent number 12,171,098
- Issue date Dec 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench field effect transistor structure comprising epitaxial layer...
- Patent number 12,166,109
- Issue date Dec 10, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Xin Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 12,166,121
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM MFM structure with selective electrode etch
- Patent number 12,167,611
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with backside power rail and method for formin...
- Patent number 12,165,973
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Chung Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 12,167,607
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor structure and manufacturing method
- Patent number 12,166,070
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jifeng Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact structure
- Patent number 12,166,088
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ting Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor and a shield electrode
- Patent number 12,166,090
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Microelectronic devices with active source/drain contacts in trench...
- Patent number 12,166,094
- Issue date Dec 10, 2024
- Micron Technology, Inc.
- Lifang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with uneven gate profile
- Patent number 12,166,096
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Sheng Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT with controlled anode injection
- Patent number 12,166,111
- Issue date Dec 10, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ekonde Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator semiconductor device with mixed doped regions
- Patent number 12,166,130
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jack Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TFT circuit board and display device having the same
- Patent number 12,166,135
- Issue date Dec 10, 2024
- Japan Display Inc.
- Yohei Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2D channel transistors with low contact resistance
- Patent number 12,166,079
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device contact and method of making same
- Patent number 12,165,915
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with linearizing field plate configuration
- Patent number 12,166,476
- Issue date Dec 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor and method for manufacturing the same
- Patent number 12,166,091
- Issue date Dec 10, 2024
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Meng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained transistor with conductive plate
- Patent number 12,166,108
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chan-Yu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,166,123
- Issue date Dec 10, 2024
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device for power amplification
- Patent number 12,166,103
- Issue date Dec 10, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 12,167,609
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE DEVICE
- Publication number 20240413212
- Publication date Dec 12, 2024
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240413236
- Publication date Dec 12, 2024
- Vanguard International Semiconductor Corporation
- Yang Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240413240
- Publication date Dec 12, 2024
- Magnachip Semiconductor, Ltd.
- Jin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240413241
- Publication date Dec 12, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki KATOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Peak Reduction in Semiconductor Devices with Metal Corner Rou...
- Publication number 20240413218
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Olof Tornblad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS
- Publication number 20240413082
- Publication date Dec 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Compensation Structure
- Publication number 20240413198
- Publication date Dec 12, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device-Level Interconnects for Stacked Transistor Structures and Me...
- Publication number 20240413211
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY
- Publication number 20240413221
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240413233
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Yi-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Switching Device
- Publication number 20240413243
- Publication date Dec 12, 2024
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240414925
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seunghee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413086
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- JINBUM KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ESD PROTECTION STRUCTURE AND METHOD OF MA...
- Publication number 20240405015
- Publication date Dec 5, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-PLATED RESISTOR
- Publication number 20240405018
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Zachary K Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIAS and Via Rails for Source/Drain Metal Full Contact
- Publication number 20240405082
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE
- Publication number 20240405761
- Publication date Dec 5, 2024
- INNOVISION SEMICONDUCTOR INC
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCE...
- Publication number 20240405115
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Maria Eloisa CASTAGNA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240405117
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...
- Publication number 20240404950
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240404951
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Che CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405081
- Publication date Dec 5, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Ying-Chi Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...
- Publication number 20240405094
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...
- Publication number 20240405120
- Publication date Dec 5, 2024
- Infineon Technologies Austria AG
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240405080
- Publication date Dec 5, 2024
- HiPer Semiconductor Inc.
- YAN LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE FOR A TRENCH POWER MOSFET WITH A SPLIT GATE...
- Publication number 20240405098
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Maurizio Gabriele CASTORINA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405104
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Young Gwon KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20240405023
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuen-Shin LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405090
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Seong Heum CHOI
- H01 - BASIC ELECTRIC ELEMENTS

Electrodes; Multistep manufacturing processes therefor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Microelectronic devices including conductive structures

Conductive structures and methods of formation

Manufacturing method and measurement method of semiconductor struct...

Methods of manufacturing three-dimensional memory devices with cond...

Dual contact process with stacked metal layers

Three-dimensional memory device with improved charge lateral migrat...

Trench field effect transistor structure comprising epitaxial layer...

Integrated circuit structure

Field-effect transistor (FET) with self-aligned ferroelectric capac...

FeRAM MFM structure with selective electrode etch

Semiconductor device with backside power rail and method for formin...

Ferroelectric memory device and method of forming the same

Semiconductor transistor structure and manufacturing method

Source/drain contact structure

Electronic device including a transistor and a shield electrode

Method of manufacturing semiconductor device and associated memory...

Microelectronic devices with active source/drain contacts in trench...

Semiconductor device structure with uneven gate profile

Reverse conducting IGBT with controlled anode injection

Silicon on insulator semiconductor device with mixed doped regions

TFT circuit board and display device having the same

Semiconductor device and manufacturing method thereof

2D channel transistors with low contact resistance

Semiconductor device contact and method of making same

High voltage device with linearizing field plate configuration

LDMOS transistor and method for manufacturing the same

Strained transistor with conductive plate

Semiconductor device

Semiconductor device for power amplification

Semiconductor structure and method of forming the same

Patents Applicationslast 30 patents

GROUP III NITRIDE DEVICE

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

NANOSHEET TRANSISTOR

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Field Peak Reduction in Semiconductor Devices with Metal Corner Rou...

METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS

Semiconductor Device with Compensation Structure

Device-Level Interconnects for Stacked Transistor Structures and Me...

INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY

GALLIUM NITRIDE SEMICONDUCTOR DEVICE

High Voltage Switching Device

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH ESD PROTECTION STRUCTURE AND METHOD OF MA...

FIELD-PLATED RESISTOR

VIAS and Via Rails for Source/Drain Metal Full Contact

GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE

HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCE...

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...

SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...

HIGH ELECTRON MOBILITY TRANSISTOR

GATE CONTACT STRUCTURE FOR A TRENCH POWER MOSFET WITH A SPLIT GATE...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE