Electron beam treatment of devices

Industry

CPC
Y10S148/046

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/046Electron beam treatment of devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating semiconductor device
- Patent number 7,037,371
- Issue date May 2, 2006
- Matsushita Electric Industrial Co., Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor IC device fabricating method
- Patent number 5,837,423
- Issue date Nov 17, 1998
- Hitachi, Ltd.
- Yoshihiko Okamoto
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor IC device fabricating method
- Patent number 5,641,715
- Issue date Jun 24, 1997
- Hitachi, Ltd.
- Yoshihiko Okamoto
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of etching a pattern on a substrate using a scanning probe m...
- Patent number 5,618,760
- Issue date Apr 8, 1997
- The Board of Trustees of the Leland Stanford, Jr. University
- Hyongsok Soh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High efficiency light emitting diodes from bipolar gallium nitride
- Patent number 5,210,051
- Issue date May 11, 1993
- Cree Research, Inc.
- Calvin H. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an ultrafine metal pattern using an electron beam
- Patent number 5,147,823
- Issue date Sep 15, 1992
- Sony Corporation
- Akira Ishibashi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for manufacturing a read only memory device using a focused...
- Patent number 5,130,273
- Issue date Jul 14, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Yoji Mashiko
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for molecular-beam epitaxial growth
- Patent number 5,120,393
- Issue date Jun 9, 1992
- Matsushita Electric Industrial Co., Ltd.
- Minoru Kubo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device having superlattice structure, and method of and apparatus f...
- Patent number 5,113,072
- Issue date May 12, 1992
- Hitachi, Ltd.
- Hiroshi Yamaguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of etching a semiconductor device by an ion beam
- Patent number 5,086,015
- Issue date Feb 4, 1992
- Hitachi, Ltd.
- Fumikazu Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nanometer single crystal metallic CoSi.sub.2 structu...
- Patent number 5,075,243
- Issue date Dec 24, 1991
- The United States of America as represented by the administrator of the Natio...
- Kai-Wei Nieh
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Hybrid circuit structure fabrication methods using high energy elec...
- Patent number 5,024,969
- Issue date Jun 18, 1991
- John J. Reche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read only memory device including a superconductive electrode
- Patent number 4,990,489
- Issue date Feb 5, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Yoji Mashiko
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing devices having superlattice structures
- Patent number 4,983,540
- Issue date Jan 8, 1991
- Hitachi, Ltd.
- Hiroshi Yamaguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for the deposition by epitaxy of a doped material
- Patent number 4,847,216
- Issue date Jul 11, 1989
- Centre National d'Etudes des Telecommunications
- Francois A. d'Avitaya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Carry device for fine movement
- Patent number 4,766,465
- Issue date Aug 23, 1988
- Canon Kabushiki Kaisha
- Kazuo Takahashi
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Micro fabrication process for semiconductor structure using coheren...
- Patent number 4,748,132
- Issue date May 31, 1988
- Hitachi, Ltd.
- Tadashi Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Joint for rails
- Patent number 4,728,220
- Issue date Mar 1, 1988
- Bernard J. Navarro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of trimmable high value polycrystalline silicon resistors
- Patent number 4,707,909
- Issue date Nov 24, 1987
- Siliconix Incorporated
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making electrically conductive regions in monolithic semi...
- Patent number 4,691,434
- Issue date Sep 8, 1987
- Lasarray Holding AG
- Richard Percival
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC interconnect system using metal as a mask
- Patent number 4,689,657
- Issue date Aug 25, 1987
- Lasarray Holding AG
- Richard Percival
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling lifetime of minority carriers by electron bea...
- Patent number 4,585,489
- Issue date Apr 29, 1986
- Kabushiki Kaisha Toshiba
- Shun-ichi Hiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making integrated devices having long and short minority...
- Patent number 4,521,256
- Issue date Jun 4, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Shunichi Hiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making transistors by ion implantations, electron beam ir...
- Patent number 4,415,372
- Issue date Nov 15, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy by beam energy and devices thereon
- Patent number 4,381,202
- Issue date Apr 26, 1983
- Fujitsu Limited
- Haruhisa Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making Schottky barrier diode by selective beam-crystalli...
- Patent number 4,377,031
- Issue date Mar 22, 1983
- Fujitsu Limited
- Hiroshi Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit device utilizing electr...
- Patent number 4,348,804
- Issue date Sep 14, 1982
- Vlsi Technology Research Association
- Mitsuru Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface barrier tailoring of semiconductor devices utilizing scanni...
- Patent number 4,184,896
- Issue date Jan 22, 1980
- The United States of America as represented by the Secretary of the Air Force
- Michael F. Millea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling leakage currents and reverse recovery time of...
- Patent number 4,137,099
- Issue date Jan 30, 1979
- General Electric Company
- Yen S. E. Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanted eutectic gallium arsenide solar cell
- Patent number 4,116,717
- Issue date Sep 26, 1978
- The United States of America as represented by the Secretary of the Air Force
- William P. Rahilly
- H01 - BASIC ELECTRIC ELEMENTS

Electron beam treatment of devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for fabricating semiconductor device

Semiconductor IC device fabricating method

Semiconductor IC device fabricating method

Method of etching a pattern on a substrate using a scanning probe m...

High efficiency light emitting diodes from bipolar gallium nitride

Method for forming an ultrafine metal pattern using an electron beam

Method for manufacturing a read only memory device using a focused...

Method for molecular-beam epitaxial growth

Device having superlattice structure, and method of and apparatus f...

Method of etching a semiconductor device by an ion beam

Fabrication of nanometer single crystal metallic CoSi.sub.2 structu...

Hybrid circuit structure fabrication methods using high energy elec...

Read only memory device including a superconductive electrode

Method of manufacturing devices having superlattice structures

Process for the deposition by epitaxy of a doped material

Carry device for fine movement

Micro fabrication process for semiconductor structure using coheren...

Joint for rails

Manufacture of trimmable high value polycrystalline silicon resistors

Method of making electrically conductive regions in monolithic semi...

IC interconnect system using metal as a mask

Method of controlling lifetime of minority carriers by electron bea...

Method of making integrated devices having long and short minority...

Method of making transistors by ion implantations, electron beam ir...

Selective epitaxy by beam energy and devices thereon

Method of making Schottky barrier diode by selective beam-crystalli...

Method of fabricating an integrated circuit device utilizing electr...

Surface barrier tailoring of semiconductor devices utilizing scanni...

Method of controlling leakage currents and reverse recovery time of...

Ion implanted eutectic gallium arsenide solar cell