Claims
- 1. Method for forming features on a substrate, said features having sub-micrometer lateral dimensions comprising:
- (a) forming an amorphous coating on said substrate, said amorphous coating comprising a material capable of controlled crystallization;
- (b) exposing a portion of said material to a focussed electron beam for a period of time and with sufficient electron energy and dose to crystallize said portion, said electron energy ranging from about 20 to 300 keV, while maintaining said coating at a temperature ranging from room temperature to 150.degree. C., the lower temperatures being associated with the higher electron energies; and
- (c) removing all amorphous coating remaining, leaving said crystallized portion on said substrate.
- 2. The method of claim 1 wherein said substrate comprises a material selected from the group consisting of silicon, silicon dioxide, and CaF.sub.2.
- 3. The method of claim 2 wherein said amorphous coating comprises a material selected from the group consisting of cobalt:silicon and iridium:silicon.
- 4. The method of claim 3 wherein said amorphous coating consists essentially of cobalt:silicon in an atomic ratio of Co:Si of 1:2.
- 5. The method of claim 4 wherein said crystallized portion comprises CoSi.sub.2.
- 6. The method of claim 1 said electron energy ranges from about 200 to 300 keV and said coating is maintained at about room temperature.
- 7. The method of claim 1 wherein said electron energy ranges from about 20 to 50 keV and wherein said elevated temperature is about 150.degree. C.
- 8. The method of claim 1 wherein said dose is at least about 10.sup.21 cm.sup.-1 min.sup.-1.
- 9. The method of claim 1 wherein said substrate comprises silicon, said amorphous coating comprises Co:Si, deposited in a stoichiometric ratio of 1:2, and said crystallized portion comprises CoSi.sub.2.
- 10. A method for fabricating field effect transistors having submicrometer gate lengths comprising:
- (a) forming a polycrystalline coating on a layer of silicon dioxide, said polycrystalline coating comprising a material capable of controlled crystallization;
- (b) exposing a portion of said material to a focussed electron beam for a period of time and with sufficient electron energy and dose to convert said portion to a single crystal portion, said electron energy ranging from about 20 to 300 keV, while maintaining said coating at a temperature ranging from room temperature to 150.degree. C., the lower temperatures being associated with the higher electron energies; and
- (c) removing all polycrystalline coating remaining, leaving said single-crystal portion on said substrate.
- 11. The method of claim 10 wherein said polycrystalline coating comprises cobalt:silicon.
- 12. The method of claim 11 wherein said polycrystalline coating consists essentially of cobalt:silicon in an atomic ratio of Co:Si of 1:2.
- 13. The method of claim 12 wherein said single-crystal portion comprises CoSi.sub.2.
- 14. The method of claim 10 said electron energy ranges from about 200 to 300 keV and said coating is maintained at a temperature of about 150.degree. C.
- 15. The method of claim 10 wherein said electron energy ranges from about 20 to 50 keV and wherein said elevated temperature is about 150.degree. C.
- 16. The method of claim 10 wherein said dose is at least about 10.sup.21 cm.sup.-1 min.sup.-1.
Parent Case Info
This is a continuation of co-pending application Ser. No. 07/392,166 filed on Aug. 10, 1989, now abandoned.
ORIGIN OF THE INVENTION
The invention described herein was made in the performance of work under a NASA contract, and is subject to the provisions of Public Law 96-517 (35 U.S.C. 202) in which the Contractor has elected not to retain title.
US Referenced Citations (6)
Continuations (1)
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Number |
Date |
Country |
Parent |
392166 |
Aug 1989 |
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