Energy beam assisted EPI growth

Industry

CPC
Y10S148/048

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/048Energy beam assisted EPI growth

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Method of producing sheets of crystalline material and devices made...
- Patent number 5,549,747
- Issue date Aug 27, 1996
- Massachusetts Institute of Technology
- Carl O. Bozler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing polycrystalline semiconductor thin film
- Patent number 5,409,867
- Issue date Apr 25, 1995
- Fuji Electric Co., Ltd.
- Akihiko Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing lower contact resistance in MOS transistor stru...
- Patent number 5,296,386
- Issue date Mar 22, 1994
- National Semiconductor Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor thin films where an argon laser is...
- Patent number 5,273,932
- Issue date Dec 28, 1993
- Nippon Telegraph and Telephone Corp.
- Hideo Sugiura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Atomic layer epitaxy of compound semiconductor
- Patent number 5,270,247
- Issue date Dec 14, 1993
- Fujitsu Limited
- Yoshiki Sakuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for molecular-beam epitaxial growth
- Patent number 5,120,393
- Issue date Jun 9, 1992
- Matsushita Electric Industrial Co., Ltd.
- Minoru Kubo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for preparing epitaxial compound semiconductor
- Patent number 5,100,832
- Issue date Mar 31, 1992
- Sharp Kabushiki Kaisha
- Masahiko Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nanometer single crystal metallic CoSi.sub.2 structu...
- Patent number 5,075,243
- Issue date Dec 24, 1991
- The United States of America as represented by the administrator of the Natio...
- Kai-Wei Nieh
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Doping procedures for semiconductor devices
- Patent number 5,024,967
- Issue date Jun 18, 1991
- AT&T Bell Laboratories
- Rose F. Kopf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making CMOS integrated devices in seeded islands
- Patent number 4,997,780
- Issue date Mar 5, 1991
- NCR Corporation
- Nicholas J. Szluk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a silicon car...
- Patent number 4,994,413
- Issue date Feb 19, 1991
- Fujitsu Limited
- Takashi Eshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of epitaxial si-ge heterostructures by solid phase epitaxy
- Patent number 4,975,387
- Issue date Dec 4, 1990
- The United States of America as represented by the Secretary of the Navy
- Sharka M. Prokes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of in situ photo induced evaporation enhancement of compound...
- Patent number 4,962,057
- Issue date Oct 9, 1990
- Xerox Corporation
- John E. Epler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing compound semiconductor thin film using multichamb...
- Patent number 4,960,720
- Issue date Oct 2, 1990
- Masafumi Shimbo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing crystalline layers by vapor phase epitaxy
- Patent number 4,950,621
- Issue date Aug 21, 1990
- Secretary of the State for Defence in Her Majesty's Government of the United...
- Stuart J. Irvine
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single crystalline silicon with intermediate bon...
- Patent number 4,940,505
- Issue date Jul 10, 1990
- Eaton Corporation
- Steven R. Schachameyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for photo-assisted epitaxial growth using remote plasma wit...
- Patent number 4,918,028
- Issue date Apr 17, 1990
- Canon Kabushiki Kaisha
- Shigeru Shirai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Heteroepitaxial selective-area growth through insulator windows
- Patent number 4,914,053
- Issue date Apr 3, 1990
- Texas Instruments Incorporated
- Richard J. Matyi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reduced stress recrystallization
- Patent number 4,888,302
- Issue date Dec 19, 1989
- North American Philips Corporation
- Subramanian Ramesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of laser enhanced vapor phase growth for compound semiconductor
- Patent number 4,885,260
- Issue date Dec 5, 1989
- Matsushita Electric Industrial Co., Ltd.
- Yuzaburo Ban
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for epitaxial growth of compound semiconductor using MOCVD w...
- Patent number 4,859,625
- Issue date Aug 22, 1989
- Research Development Corporation of Japan, Junichi Nishizawa and Oki Electric...
- Fumio Matsumoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating compound semiconductor laser using selective...
- Patent number 4,843,031
- Issue date Jun 27, 1989
- Matsushita Electric Industrial Co., Ltd.
- Yuzaburo Ban
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a heteroepitaxial compound semiconductor de...
- Patent number 4,843,029
- Issue date Jun 27, 1989
- U.S. Philips Corporation
- Bruce A. Joyce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing by a combination of photolytic, pyrolytic...
- Patent number 4,843,030
- Issue date Jun 27, 1989
- Eaton Corporation
- J. Gary Eden
- C30 - CRYSTAL GROWTH
Information Patent Grant
Passivation of indium gallium arsenide surfaces
- Patent number 4,843,037
- Issue date Jun 27, 1989
- Bell Communications Research, Inc.
- Eli Yablonovitch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing sheets of crystalline material
- Patent number 4,837,182
- Issue date Jun 6, 1989
- Massachusetts Institute of Technology
- Carl O. Bozler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Annealing method for III-V deposition
- Patent number 4,835,116
- Issue date May 30, 1989
- Kopin Corporation
- Jhang W. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing tandem solar cell devices from sheets of crysta...
- Patent number 4,816,420
- Issue date Mar 28, 1989
- Massachusetts Institute of Technology
- Carl O. Bozler
- C30 - CRYSTAL GROWTH
Information Patent Grant
SOI process for forming a thin film transistor using solid phase ep...
- Patent number 4,808,546
- Issue date Feb 28, 1989
- Hitachi, Ltd.
- Masahiro Moniwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing Si or Ge epitaxial film using fluorine oxidant
- Patent number 4,800,173
- Issue date Jan 24, 1989
- Canon Kabushiki Kaisha
- Masahiro Kanai
- C30 - CRYSTAL GROWTH

Energy beam assisted EPI growth

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of producing sheets of crystalline material and devices made...

Method of producing polycrystalline semiconductor thin film

Method of providing lower contact resistance in MOS transistor stru...

Method for forming semiconductor thin films where an argon laser is...

Atomic layer epitaxy of compound semiconductor

Method for molecular-beam epitaxial growth

Process for preparing epitaxial compound semiconductor

Fabrication of nanometer single crystal metallic CoSi.sub.2 structu...

Doping procedures for semiconductor devices

Method of making CMOS integrated devices in seeded islands

Method of manufacturing a semiconductor device having a silicon car...

Formation of epitaxial si-ge heterostructures by solid phase epitaxy

Method of in situ photo induced evaporation enhancement of compound...

Method of growing compound semiconductor thin film using multichamb...

Method of growing crystalline layers by vapor phase epitaxy

Method for growing single crystalline silicon with intermediate bon...

Process for photo-assisted epitaxial growth using remote plasma wit...

Heteroepitaxial selective-area growth through insulator windows

Method of reduced stress recrystallization

Method of laser enhanced vapor phase growth for compound semiconductor

Method for epitaxial growth of compound semiconductor using MOCVD w...

Method of fabricating compound semiconductor laser using selective...

Method of manufacturing a heteroepitaxial compound semiconductor de...

Semiconductor processing by a combination of photolytic, pyrolytic...

Passivation of indium gallium arsenide surfaces

Method of producing sheets of crystalline material

Annealing method for III-V deposition

Method of producing tandem solar cell devices from sheets of crysta...

SOI process for forming a thin film transistor using solid phase ep...

Process for preparing Si or Ge epitaxial film using fluorine oxidant

Patents Applicationslast 30 patents