explicitly Al-free cladding layers

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H01S5/3219

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

Current Industry

H01S5/3219explicitly Al-free cladding layers

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Patents Grantslast 30 patents

Information Patent Grant
Method and device concerning III-nitride edge emitting laser diode...
- Patent number 10,554,017
- Issue date Feb 4, 2020
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge-emitting laser having small vertical emitting angle
- Patent number 10,522,974
- Issue date Dec 31, 2019
- TrueLight Corporation
- Chien Hung Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge-emitting laser having small vertical emitting angle
- Patent number 10,014,663
- Issue date Jul 3, 2018
- TrueLight Corporation
- Chien Hung Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of p-type cladding regions using nitrogen gas for...
- Patent number 9,564,736
- Issue date Feb 7, 2017
- Soraa Laser Diode, Inc.
- Po Shan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor optical element
- Patent number 9,269,869
- Issue date Feb 23, 2016
- Hitachi, Ltd.
- Tadashi Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for laser devices using optical blocking regions
- Patent number 9,093,820
- Issue date Jul 28, 2015
- Soraa Laser Diode, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity, surface-emission type laser diode and fabrication...
- Patent number 7,940,827
- Issue date May 10, 2011
- Ricoh Company, Ltd.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire devices and systems, light-emitting nanowires, and methods...
- Patent number 7,910,915
- Issue date Mar 22, 2011
- Hewlett-Packard Development Company, L.P.
- Theodore I Kamins
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Blue and green laser diodes with gallium nitride or indium gallium...
- Patent number 7,751,455
- Issue date Jul 6, 2010
- Palo Alto Research Center Incorporated
- Michael A. Kneissl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity, surface-emission type laser diode and fabrication...
- Patent number 7,519,095
- Issue date Apr 14, 2009
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire devices and systems, light-emitting nanowires, and methods...
- Patent number 7,465,954
- Issue date Dec 16, 2008
- Hewlett-Packard Development Company, L.P.
- Theodore I Kamins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity surface-emission type laser diode and fabrication p...
- Patent number 7,260,137
- Issue date Aug 21, 2007
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity, surface-emission type laser diode and fabrication...
- Patent number 7,022,539
- Issue date Apr 4, 2006
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device having an active layer containing N
- Patent number 6,879,614
- Issue date Apr 12, 2005
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity, surface-emission type laser diode and fabrication...
- Patent number 6,674,785
- Issue date Jan 6, 2004
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor, semiconductor light emitting device and semicon...
- Patent number 6,605,486
- Issue date Aug 12, 2003
- Kabushiki Kaisha Toshiba
- Hidetoshi Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor, semiconductor light emitting device and semicon...
- Patent number 6,498,050
- Issue date Dec 24, 2002
- Kabushiki Kaisha Toshiba
- Hidetoshi Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device and optical information reproduction app...
- Patent number 6,493,367
- Issue date Dec 10, 2002
- Sharp Kabushiki Kaisha
- Shigetoshi Ito
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 6,486,491
- Issue date Nov 26, 2002
- Sharp Kabushiki Kaisha
- Stephen Peter Najda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device having an active layer containing N
- Patent number 6,449,299
- Issue date Sep 10, 2002
- Ricoh Company, Ltd.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optical semiconductor device having an active layer containing N
- Patent number 6,233,264
- Issue date May 15, 2001
- Ricoh Company, Ltd.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
semiconductor light emitting devices
- Patent number 6,072,196
- Issue date Jun 6, 2000
- Ricoh Company, Ltd.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220271509
- Publication date Aug 25, 2022
- Mitsubishi Electric Corporation
- Hiroyuki KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE-EMITTING LASER HAVING SMALL VERTICAL EMITTING ANGLE
- Publication number 20180366908
- Publication date Dec 20, 2018
- TRUELIGHT CORPORATION
- Chien Hung Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER DIODE AND LASER ARRAY IMPLEMENTING THE SAME
- Publication number 20160164249
- Publication date Jun 9, 2016
- Sumitomo Electric Industries, Ltd.
- Toshimitsu KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR OPTICAL ELEMENT
- Publication number 20140355636
- Publication date Dec 4, 2014
- Tadashi Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-CAVITY, SURFACE-EMISSION TYPE LASER DIODE AND FABRICATION...
- Publication number 20090168828
- Publication date Jul 2, 2009
- RICOH COMPANY, LTD.,
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanowire devices and systems, light-emitting nanowires, and methods...
- Publication number 20090059982
- Publication date Mar 5, 2009
- Theodore I. Kamins
- G02 - OPTICS
Information Patent Application
Vertical-cavity, surface-emission type laser diode and fabrication...
- Publication number 20070263689
- Publication date Nov 15, 2007
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanowire devices and systems, light-emitting nanowires, and methods...
- Publication number 20070252132
- Publication date Nov 1, 2007
- Theodore I. Kamins
- G02 - OPTICS
Information Patent Application
Vertical-cavity surface-emission type laser diode and fabrication p...
- Publication number 20060134817
- Publication date Jun 22, 2006
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Blue and green laser diodes with gallium nitride or indium gallium...
- Publication number 20060126688
- Publication date Jun 15, 2006
- Palo Alto Research Center Incorporated
- Michael A. Kneissl
- B82 - NANO-TECHNOLOGY
Information Patent Application
Optical semiconductor device having an active layer containing N
- Publication number 20050169334
- Publication date Aug 4, 2005
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Vertical-cavity, surface-emission type laser diode and fabrication...
- Publication number 20040065888
- Publication date Apr 8, 2004
- RICOH COMPANY, LTD.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Bipolar transistor, semiconductor light emitting device and semicon...
- Publication number 20030064538
- Publication date Apr 3, 2003
- KABUSHIKI KAISHA TOSHIBA
- Hidetoshi Fujimoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
Optical semiconductor device having an active layer containing N
- Publication number 20020195607
- Publication date Dec 26, 2002
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Verticle-cavity, surface-emission type laser diode and fabrication...
- Publication number 20020074631
- Publication date Jun 20, 2002
- Ricoh Company, Ltd.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Bipolar transistor, semiconductor light emitting device and semicon...
- Publication number 20020031853
- Publication date Mar 14, 2002
- KABUSHIKI KAISHA TOSHIBA
- Hidetoshi Fujimoto
- B82 - NANO-TECHNOLOGY

explicitly Al-free cladding layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method and device concerning III-nitride edge emitting laser diode...

Edge-emitting laser having small vertical emitting angle

Edge-emitting laser having small vertical emitting angle

Epitaxial growth of p-type cladding regions using nitrogen gas for...

Semiconductor optical element

Method and structure for laser devices using optical blocking regions

Vertical-cavity, surface-emission type laser diode and fabrication...

Nanowire devices and systems, light-emitting nanowires, and methods...

Blue and green laser diodes with gallium nitride or indium gallium...

Vertical-cavity, surface-emission type laser diode and fabrication...

Nanowire devices and systems, light-emitting nanowires, and methods...

Vertical-cavity surface-emission type laser diode and fabrication p...

Vertical-cavity, surface-emission type laser diode and fabrication...

Optical semiconductor device having an active layer containing N

Vertical-cavity, surface-emission type laser diode and fabrication...

Bipolar transistor, semiconductor light emitting device and semicon...

Bipolar transistor, semiconductor light emitting device and semicon...

Semiconductor laser device and optical information reproduction app...

Semiconductor device

Optical semiconductor device having an active layer containing N

Optical semiconductor device having an active layer containing N

semiconductor light emitting devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

EDGE-EMITTING LASER HAVING SMALL VERTICAL EMITTING ANGLE

SEMICONDUCTOR LASER DIODE AND LASER ARRAY IMPLEMENTING THE SAME

SEMICONDUCTOR OPTICAL ELEMENT

VERTICAL-CAVITY, SURFACE-EMISSION TYPE LASER DIODE AND FABRICATION...

Nanowire devices and systems, light-emitting nanowires, and methods...

Vertical-cavity, surface-emission type laser diode and fabrication...

Nanowire devices and systems, light-emitting nanowires, and methods...

Vertical-cavity surface-emission type laser diode and fabrication p...

Blue and green laser diodes with gallium nitride or indium gallium...

Optical semiconductor device having an active layer containing N

Vertical-cavity, surface-emission type laser diode and fabrication...

Bipolar transistor, semiconductor light emitting device and semicon...

Optical semiconductor device having an active layer containing N

Verticle-cavity, surface-emission type laser diode and fabrication...

Bipolar transistor, semiconductor light emitting device and semicon...