External programming circuits

Industry

CPC
G11C16/102

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/102External programming circuits

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Programming for three-dimensional NAND memory
- Patent number 12,272,404
- Issue date Apr 8, 2025
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block read level voltage compensation to decrease read trig...
- Patent number 12,272,408
- Issue date Apr 8, 2025
- Micron Technology, Inc.
- Nagendra Prasad Ganesh Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
Performing selective copyback in memory devices
- Patent number 12,272,412
- Issue date Apr 8, 2025
- Micron Technology, Inc.
- Vamsi Rayaprolu
- G11 - INFORMATION STORAGE
Information Patent Grant
Conditional valley tracking during corrective reads
- Patent number 12,266,407
- Issue date Apr 1, 2025
- Micron Technology, Inc.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Operation method of memory, memory, memory system, and electronic d...
- Patent number 12,266,405
- Issue date Apr 1, 2025
- Yangtze Memory Technologies Co., Ltd.
- Lu Qiu
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block handling in a non-volatile memory device
- Patent number 12,260,916
- Issue date Mar 25, 2025
- Micron Technology, Inc.
- Zhongguang Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier architecture providing reduced program verification...
- Patent number 12,260,921
- Issue date Mar 25, 2025
- SanDisk Technologies LLC
- Hiroki Yabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device with parallel programming
- Patent number 12,260,915
- Issue date Mar 25, 2025
- SK keyfoundry Inc.
- Seong Jun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device for generating identity code and identity code gener...
- Patent number 12,260,917
- Issue date Mar 25, 2025
- Macronix International Co., Ltd.
- Yu-Hsuan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor apparatus and system
- Patent number 12,260,920
- Issue date Mar 25, 2025
- Rohm Co., Ltd.
- Nozomu Koja
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-bit-per-cell programming using a four-bit-per-cell programmin...
- Patent number 12,254,931
- Issue date Mar 18, 2025
- SanDisk Technologies, Inc.
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for effectively checking program state and operation...
- Patent number 12,254,932
- Issue date Mar 18, 2025
- SK Hynix Inc.
- Soo Yeol Chai
- G11 - INFORMATION STORAGE
Information Patent Grant
Operation method for memory device
- Patent number 12,254,928
- Issue date Mar 18, 2025
- Winbond Electronics Corp.
- Yi-Chen Fan
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and compensation method of data retention thereof
- Patent number 12,254,934
- Issue date Mar 18, 2025
- Macronix International Co., Ltd.
- Chih-Wei Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming method of non-volatile memory cell
- Patent number 12,255,645
- Issue date Mar 18, 2025
- eMemory Technology Inc.
- Chia-Jung Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Open block-based read offset compensation in read operation of memo...
- Patent number 12,249,379
- Issue date Mar 11, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaojiang Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device optimized for a surface mount technology...
- Patent number 12,248,684
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Joohee Son
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
CELSRC voltage separation between SLC and XLC for SLC program avera...
- Patent number 12,249,378
- Issue date Mar 11, 2025
- SanDisk Technologies LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
In-place write techniques without erase in a memory device
- Patent number 12,243,591
- Issue date Mar 4, 2025
- SanDisk Technologies, Inc.
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory device and program method thereof using leakage curren...
- Patent number 12,243,596
- Issue date Mar 4, 2025
- Winbond Electronics Corp.
- Wen-Chiao Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device and program operation method for a sel...
- Patent number 12,243,598
- Issue date Mar 4, 2025
- Kioxia Corporation
- Yuki Inuzuka
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and program operation thereof
- Patent number 12,243,597
- Issue date Mar 4, 2025
- Yangtze Memory Technologies Co., Ltd.
- Weijun Wan
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive sensing time for memory operations
- Patent number 12,237,015
- Issue date Feb 25, 2025
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and programming method thereof
- Patent number 12,237,024
- Issue date Feb 25, 2025
- Macronix International Co., Ltd.
- Kun-Tse Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory sub-system sanitization
- Patent number 12,237,018
- Issue date Feb 25, 2025
- Micron Technology, Inc.
- Eric N. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, method for operating memory device, memory system
- Patent number 12,237,016
- Issue date Feb 25, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaojiang Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, memory system, and program operation method thereof
- Patent number 12,237,025
- Issue date Feb 25, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yali Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Configurable types of write operations
- Patent number 12,230,232
- Issue date Feb 18, 2025
- Micron Technology, Inc.
- Giuseppe Cariello
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dynamic program caching
- Patent number 12,230,334
- Issue date Feb 18, 2025
- INTEL NDTM US LLC
- Aliasgar S. Madraswala
- G11 - INFORMATION STORAGE
Information Patent Grant
Data latch programming algorithm for multi-bit-per-cell memory devices
- Patent number 12,230,335
- Issue date Feb 18, 2025
- SanDisk Technologies LLC
- Toru Miwa
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
READ IN MULTI-TIER NON-VOLATILE MEMORY
- Publication number 20250118376
- Publication date Apr 10, 2025
- Western Digital Technologies, Inc.
- Manoj Shenoy
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE AND PASS-FAIL CHECK METHOD THEREOF
- Publication number 20250118381
- Publication date Apr 10, 2025
- Samsung Electronics Co., Ltd.
- Jungmin Park
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE FOR SELECTIVELY PERFORMING HIGH-RELIABILITY PROGRAM...
- Publication number 20250118371
- Publication date Apr 10, 2025
- Samsung Electronics Co., Ltd.
- Sewoong Lee
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE LATENCY AND ENERGY USING ASYMMETRIC CELL DESIGN
- Publication number 20250118372
- Publication date Apr 10, 2025
- Micron Technology, Inc.
- Mattia Robustelli
- G11 - INFORMATION STORAGE
Information Patent Application
ROW DECODER CIRCUIT AND CORRESPONDING METHOD OF OPERATION
- Publication number 20250111878
- Publication date Apr 3, 2025
- STMicroelectronics International N.V.
- Fabio Enrico Carlo Disegni
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL VOLTAGE LEVEL SELECTION
- Publication number 20250104772
- Publication date Mar 27, 2025
- Micron Technology, Inc.
- Tingjun Xie
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, MEMORY SYSTEM AND OPERATION METHOD THEREOF
- Publication number 20250104782
- Publication date Mar 27, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhijiu ZHU
- G11 - INFORMATION STORAGE
Information Patent Application
WORDLINE OR PILLAR STATE DETECTION FOR FASTER READ ACCESS TIMES
- Publication number 20250104781
- Publication date Mar 27, 2025
- Micron Technology, Inc.
- Violante Moschiano
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, OPERATION METHOD THEREOF, AND MEMORY SYSTEM
- Publication number 20250095744
- Publication date Mar 20, 2025
- Yangtze Memory Technologies Co., Ltd.
- Jiameng CUI
- G11 - INFORMATION STORAGE
Information Patent Application
BLOCK SELECTION CIRCUIT CONTROLLING SERIES CONNECTED PASS TRANSISTO...
- Publication number 20250095745
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Tae-Hong KWON
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT
- Publication number 20250095746
- Publication date Mar 20, 2025
- Micron Technology, Inc.
- Carmine Miccoli
- G11 - INFORMATION STORAGE
Information Patent Application
NEIGHBOR PLANE DISTURB (NPD) DETECTION FOR MEMORY DEVICES
- Publication number 20250095757
- Publication date Mar 20, 2025
- Western Digital Technologies, Inc.
- Sai Gautham Thoppa
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250095760
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Takatoshi MINAMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND A METHOD OF OPERATING THE SAME
- Publication number 20250095759
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Ilho Myeong
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND CONTROL METHOD
- Publication number 20250095756
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Hajime SANO
- G11 - INFORMATION STORAGE
Information Patent Application
REVIVING FAULTY NAND BY AI DATA MODULATION
- Publication number 20250095758
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Amit BERMAN
- G11 - INFORMATION STORAGE
Information Patent Application
ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM
- Publication number 20250087278
- Publication date Mar 13, 2025
- Micron Technology, Inc.
- Tingjun Xie
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM AND CONTROL METHOD THEREOF
- Publication number 20250087284
- Publication date Mar 13, 2025
- KIOXIA Corporation
- Hisaki NIIKURA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCT...
- Publication number 20250087271
- Publication date Mar 13, 2025
- SK HYNIX INC.
- Hee Youl LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, OPERATION METHOD THEREOF, AND READABLE STORAGE MEDIUM
- Publication number 20250087282
- Publication date Mar 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Wenping CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR OPERATING FERROELECTRIC-BASED THREE-DIMENSIONAL FLASH ME...
- Publication number 20250087272
- Publication date Mar 13, 2025
- Samsung Electronics Co., LTD
- Yun Heub Song
- G11 - INFORMATION STORAGE
Information Patent Application
ACCESS LINE VOLTAGE RAMP RATE ADJUSTMENT
- Publication number 20250087283
- Publication date Mar 13, 2025
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
MANAGING PROGRAM DISTURB IN MEMORY DEVICES
- Publication number 20250078931
- Publication date Mar 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kaikai You
- G11 - INFORMATION STORAGE
Information Patent Application
CONCURRENT PROGRAMMING OF RETIRED WORDLINE CELLS WITH DUMMY DATA
- Publication number 20250078932
- Publication date Mar 6, 2025
- Micron Technology, Inc.
- Jeffrey S. McNeil
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING A THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250078942
- Publication date Mar 6, 2025
- SK HYNIX INC.
- In Ku KANG
- G11 - INFORMATION STORAGE
Information Patent Application
SETTING OPTIMAL THRESHOLD VOLTAGES FOR READING DATA FROM A MEMORY D...
- Publication number 20250069660
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Tal PHILOSOF
- G11 - INFORMATION STORAGE
Information Patent Application
ENHANCING READ WINDOW BUDGET USING READ VERIFY
- Publication number 20250069675
- Publication date Feb 27, 2025
- Micron Technology, Inc.
- Daniel Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
PREDICTIVE PROGRAM VERIFICATION
- Publication number 20250069676
- Publication date Feb 27, 2025
- Micron Technology, Inc.
- Jungmi Ko
- G11 - INFORMATION STORAGE
Information Patent Application
One Time Programmable Memory Cell
- Publication number 20250069666
- Publication date Feb 27, 2025
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Ying Yan
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING A MEMORY CONTROLLER, MEMORY CONTROLLER, AND MEM...
- Publication number 20250069667
- Publication date Feb 27, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiao Shao
- G11 - INFORMATION STORAGE

External programming circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Programming for three-dimensional NAND memory

Partial block read level voltage compensation to decrease read trig...

Performing selective copyback in memory devices

Conditional valley tracking during corrective reads

Operation method of memory, memory, memory system, and electronic d...

Partial block handling in a non-volatile memory device

Sense amplifier architecture providing reduced program verification...

Non-volatile memory device with parallel programming

Storage device for generating identity code and identity code gener...

Semiconductor apparatus and system

Three-bit-per-cell programming using a four-bit-per-cell programmin...

Memory device for effectively checking program state and operation...

Operation method for memory device

Memory device and compensation method of data retention thereof

Programming method of non-volatile memory cell

Open block-based read offset compensation in read operation of memo...

Non-volatile memory device optimized for a surface mount technology...

CELSRC voltage separation between SLC and XLC for SLC program avera...

In-place write techniques without erase in a memory device

Flash memory device and program method thereof using leakage curren...

Semiconductor storage device and program operation method for a sel...

Memory device and program operation thereof

Adaptive sensing time for memory operations

Memory device and programming method thereof

Memory sub-system sanitization

Memory device, method for operating memory device, memory system

Memory device, memory system, and program operation method thereof

Configurable types of write operations

Dynamic program caching

Data latch programming algorithm for multi-bit-per-cell memory devices

Patents Applicationslast 30 patents

READ IN MULTI-TIER NON-VOLATILE MEMORY

NONVOLATILE MEMORY DEVICE AND PASS-FAIL CHECK METHOD THEREOF

STORAGE DEVICE FOR SELECTIVELY PERFORMING HIGH-RELIABILITY PROGRAM...

WRITE LATENCY AND ENERGY USING ASYMMETRIC CELL DESIGN

ROW DECODER CIRCUIT AND CORRESPONDING METHOD OF OPERATION

MEMORY CELL VOLTAGE LEVEL SELECTION

MEMORY DEVICE, MEMORY SYSTEM AND OPERATION METHOD THEREOF

WORDLINE OR PILLAR STATE DETECTION FOR FASTER READ ACCESS TIMES

MEMORY DEVICE, OPERATION METHOD THEREOF, AND MEMORY SYSTEM

BLOCK SELECTION CIRCUIT CONTROLLING SERIES CONNECTED PASS TRANSISTO...

DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT

NEIGHBOR PLANE DISTURB (NPD) DETECTION FOR MEMORY DEVICES

SEMICONDUCTOR MEMORY DEVICE

NON-VOLATILE MEMORY DEVICE AND A METHOD OF OPERATING THE SAME

SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND CONTROL METHOD

REVIVING FAULTY NAND BY AI DATA MODULATION

ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM

MEMORY SYSTEM AND CONTROL METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCT...

MEMORY DEVICE, OPERATION METHOD THEREOF, AND READABLE STORAGE MEDIUM

METHOD FOR OPERATING FERROELECTRIC-BASED THREE-DIMENSIONAL FLASH ME...

ACCESS LINE VOLTAGE RAMP RATE ADJUSTMENT

MANAGING PROGRAM DISTURB IN MEMORY DEVICES

CONCURRENT PROGRAMMING OF RETIRED WORDLINE CELLS WITH DUMMY DATA

METHOD OF OPERATING A THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE

SETTING OPTIMAL THRESHOLD VOLTAGES FOR READING DATA FROM A MEMORY D...

ENHANCING READ WINDOW BUDGET USING READ VERIFY

PREDICTIVE PROGRAM VERIFICATION

One Time Programmable Memory Cell

METHOD OF OPERATING A MEMORY CONTROLLER, MEMORY CONTROLLER, AND MEM...