External programming circuits

Industry

CPC
G11C16/102

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/102External programming circuits

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory device and operating method of the memory device including d...
- Patent number 12,148,485
- Issue date Nov 19, 2024
- SK hynix Inc.
- Soo Yeol Chai
- G11 - INFORMATION STORAGE
Information Patent Grant
Read voltage adjustment method, memory storage device and memory co...
- Patent number 12,148,486
- Issue date Nov 19, 2024
- Phison Electronics Corp.
- Hsiao-Yi Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Cooperative storage device for managing logical subdivisions
- Patent number 12,147,335
- Issue date Nov 19, 2024
- Radian Memory Systems, LLC
- Andrey V. Kuzmin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Mixed write cursor for block stripe writing
- Patent number 12,136,459
- Issue date Nov 5, 2024
- Micron Technology, Inc.
- Donghua Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory programming operation comprising preprogramming memory cells
- Patent number 12,136,461
- Issue date Nov 5, 2024
- Macronix International Co., Ltd.
- Che-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage system and method for improving read latency during mixed r...
- Patent number 12,136,462
- Issue date Nov 5, 2024
- SanDisk Technologies, Inc.
- Sergey Anatolievich Gorobets
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and method of operating the same
- Patent number 12,131,789
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Junho Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Triple modular redundancy for fault-tolerant in-memory computing
- Patent number 12,131,793
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Media management operations based on health characteristics of memo...
- Patent number 12,131,790
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Ashutosh Malshe
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of programming non-volatile memory device
- Patent number 12,125,541
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Joe
- G11 - INFORMATION STORAGE
Information Patent Grant
Write latency and energy using asymmetric cell design
- Patent number 12,125,540
- Issue date Oct 22, 2024
- Micron Technology, Inc.
- Mattia Robustelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory architecture for serial EEPROMs
- Patent number 12,125,532
- Issue date Oct 22, 2024
- STMicroelectronics (Rousset) SAS
- Laurent Murillo
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory device having multi-stack structure and channel separa...
- Patent number 12,119,066
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Hyebin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Program continuation strategies after memory device power loss
- Patent number 12,119,068
- Issue date Oct 15, 2024
- Micron Technology, Inc.
- Gary F. Besinga
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, the operation method thereof and memory system
- Patent number 12,112,802
- Issue date Oct 8, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhihong Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Open block boundary group programming for non-volatile memory
- Patent number 12,112,814
- Issue date Oct 8, 2024
- SanDisk Technologies, Inc.
- Ke Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Detecting a memory write reliability risk without using a write ver...
- Patent number 12,106,812
- Issue date Oct 1, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device storing logical page data and operating method of the...
- Patent number 12,106,806
- Issue date Oct 1, 2024
- SK hynix Inc.
- Jung Shik Jang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and asynchronous multi-plane independent read operati...
- Patent number 12,106,810
- Issue date Oct 1, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jialiang Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Increased precision analog content addressable memories
- Patent number 12,106,805
- Issue date Oct 1, 2024
- Hewlett Packard Enterprise Development LP
- Tobias Frederic Ziegler
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with suspension period during programming
- Patent number 12,100,461
- Issue date Sep 24, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and multi-pass program operation thereof
- Patent number 12,100,462
- Issue date Sep 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Chao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device
- Patent number 12,100,452
- Issue date Sep 24, 2024
- Samsung Electronics Co., Ltd.
- Kuihan Ko
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with differential temperature compensation for...
- Patent number 12,094,537
- Issue date Sep 17, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Continuous memory programming operations
- Patent number 12,094,547
- Issue date Sep 17, 2024
- Micron Technology, Inc.
- Violante Moschiano
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with zone based program speed adjustment
- Patent number 12,094,546
- Issue date Sep 17, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method for performing pre-program opera...
- Patent number 12,087,376
- Issue date Sep 10, 2024
- SK hynix Inc.
- Jae Woong Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Managing compensation for cell-to-cell coupling and lateral migrati...
- Patent number 12,087,374
- Issue date Sep 10, 2024
- Micron Technology, Inc.
- Mustafa N. Kaynak
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and memory system
- Patent number 12,080,361
- Issue date Sep 3, 2024
- Kioxia Corporation
- Yasuhiro Shiino
- G11 - INFORMATION STORAGE
Information Patent Grant
Using non-segregated cells as drain-side select gates for sub-block...
- Patent number 12,080,351
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Aaron S. Yip
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20240386975
- Publication date Nov 21, 2024
- SK HYNIX INC.
- Jae Woong KIM
- G11 - INFORMATION STORAGE
Information Patent Application
USING NON-SEGREGATED CELLS AS DRAIN-SIDE SELECT GATES FOR SUB-BLOCK...
- Publication number 20240386965
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Aaron S. Yip
- G11 - INFORMATION STORAGE
Information Patent Application
LEVEL-BASED DATA REFRESH IN A MEMORY SUB-SYSTEM
- Publication number 20240386974
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20240386964
- Publication date Nov 21, 2024
- SK HYNIX INC.
- Chan Hui JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20240379163
- Publication date Nov 14, 2024
- SK HYNIX INC.
- Ho Kyun JANG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PROGRAMMING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLA...
- Publication number 20240379164
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Woosul SHIN
- G11 - INFORMATION STORAGE
Information Patent Application
GANGED SINGLE LEVEL CELL VERIFY IN A MEMORY DEVICE
- Publication number 20240379178
- Publication date Nov 14, 2024
- Micron Technology, Inc.
- Eric N. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND AN OPERATION METHOD THEREOF
- Publication number 20240379171
- Publication date Nov 14, 2024
- Macronix International Co., Ltd.
- You-Liang CHOU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE
- Publication number 20240379165
- Publication date Nov 14, 2024
- SK HYNIX INC.
- Jae Woong KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND ASYNCHRONOUS MULTI-PLANE INDEPENDENT READ OPERATI...
- Publication number 20240371446
- Publication date Nov 7, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jialiang Deng
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY INCLUDING ON-DIE-TERMINATION CIRCUIT AND STORAGE...
- Publication number 20240371457
- Publication date Nov 7, 2024
- Samsung Electronics Co., Ltd.
- Eun-Ji Kim
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240371451
- Publication date Nov 7, 2024
- SK HYNIX INC.
- Hyung Jin CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES
- Publication number 20240363190
- Publication date Oct 31, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
IN SITU DATA REFRESH WITHOUT ERASE/PROGRAM CYCLES
- Publication number 20240363178
- Publication date Oct 31, 2024
- Western Digital Technologies, Inc.
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
PAGE BUFFER, SEMICONDUCTOR MEMORY HAVING THE SAME, AND OPERATING ME...
- Publication number 20240363180
- Publication date Oct 31, 2024
- SK HYNIX INC.
- Soo Yeol CHAI
- G11 - INFORMATION STORAGE
Information Patent Application
FULL SEQUENCE PROGRAM FOR EDGE WORD LINE QUAD-LEVEL MEMORY CELLS
- Publication number 20240363167
- Publication date Oct 31, 2024
- Western Digital Technologies, Inc.
- Sisi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
DETECTION OF LEAKAGE CURRENT IN FLASH MEMORY
- Publication number 20240363179
- Publication date Oct 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Guanyu Sha
- G11 - INFORMATION STORAGE
Information Patent Application
PRESERVING BLOCKS EXPERIENCING PROGRAM FAILURE IN MEMORY DEVICES
- Publication number 20240363193
- Publication date Oct 31, 2024
- Micron Technology, Inc.
- Pranam Shetty
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATION METHOD THEREOF
- Publication number 20240355394
- Publication date Oct 24, 2024
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Application
SEPARATE PEAK CURRENT CHECKPOINTS FOR CLOSED AND OPEN BLOCK READ IC...
- Publication number 20240355400
- Publication date Oct 24, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NEGATIVE WORD LINE ENABLED PRE-BOOSTING STRATEGY TO IMPROVE NAND PR...
- Publication number 20240355401
- Publication date Oct 24, 2024
- SANDISK TECHNOLOGIES LLC
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
KNOWN-FAILURE ERROR HANDLING IN A MEMORY SUB-SYSTEM
- Publication number 20240355402
- Publication date Oct 24, 2024
- Micron Technology, Inc.
- Robert Winston Mason
- G11 - INFORMATION STORAGE
Information Patent Application
DRIFT COMPENSATION FOR CODEWORDS IN MEMORY
- Publication number 20240355395
- Publication date Oct 24, 2024
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND ENHANCE PROGRAMMING METHOD THEREOF
- Publication number 20240347118
- Publication date Oct 17, 2024
- WINBOND ELECTRONICS CORP.
- Lung-Chi Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
PERFORMING DATA INTEGRITY CHECKS TO IDENTIFY DEFECTIVE WORDLINES
- Publication number 20240347110
- Publication date Oct 17, 2024
- Micron Technology, Inc.
- Jian Huang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH HIGH CONTENT DENSITY AND ENCODING METHOD THEREOF
- Publication number 20240339162
- Publication date Oct 10, 2024
- Macronix International Co., Ltd.
- Po-Hao TSENG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE
- Publication number 20240339161
- Publication date Oct 10, 2024
- Rohm Co., Ltd.
- Seiji Takenaka
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY AND NONVOLATILE MEMORY
- Publication number 20240339160
- Publication date Oct 10, 2024
- KIOXIA Corporation
- Tokumasa HARA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATION METHOD THEREOF
- Publication number 20240331775
- Publication date Oct 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Li Xiang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20240331783
- Publication date Oct 3, 2024
- Samsung Electronics Co., Ltd.
- Taeyun Lee
- G11 - INFORMATION STORAGE

External programming circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device and operating method of the memory device including d...

Read voltage adjustment method, memory storage device and memory co...

Cooperative storage device for managing logical subdivisions

Mixed write cursor for block stripe writing

Memory programming operation comprising preprogramming memory cells

Storage system and method for improving read latency during mixed r...

Nonvolatile memory device and method of operating the same

Triple modular redundancy for fault-tolerant in-memory computing

Media management operations based on health characteristics of memo...

Method of programming non-volatile memory device

Write latency and energy using asymmetric cell design

Memory architecture for serial EEPROMs

Flash memory device having multi-stack structure and channel separa...

Program continuation strategies after memory device power loss

Memory device, the operation method thereof and memory system

Open block boundary group programming for non-volatile memory

Detecting a memory write reliability risk without using a write ver...

Memory device storing logical page data and operating method of the...

Memory device and asynchronous multi-plane independent read operati...

Increased precision analog content addressable memories

Non-volatile memory with suspension period during programming

Memory device and multi-pass program operation thereof

Non-volatile memory device

Non-volatile memory with differential temperature compensation for...

Continuous memory programming operations

Non-volatile memory with zone based program speed adjustment

Memory device and operating method for performing pre-program opera...

Managing compensation for cell-to-cell coupling and lateral migrati...

Memory device and memory system

Using non-segregated cells as drain-side select gates for sub-block...

Patents Applicationslast 30 patents

MEMORY DEVICE AND METHOD OF OPERATING THE SAME

USING NON-SEGREGATED CELLS AS DRAIN-SIDE SELECT GATES FOR SUB-BLOCK...

LEVEL-BASED DATA REFRESH IN A MEMORY SUB-SYSTEM

MEMORY DEVICE

SEMICONDUCTOR DEVICE AND OPERATING METHOD OF THE SAME

METHOD OF PROGRAMMING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLA...

GANGED SINGLE LEVEL CELL VERIFY IN A MEMORY DEVICE

MEMORY DEVICE AND AN OPERATION METHOD THEREOF

MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE

MEMORY DEVICE AND ASYNCHRONOUS MULTI-PLANE INDEPENDENT READ OPERATI...

NONVOLATILE MEMORY INCLUDING ON-DIE-TERMINATION CIRCUIT AND STORAGE...

SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF

ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES

IN SITU DATA REFRESH WITHOUT ERASE/PROGRAM CYCLES

PAGE BUFFER, SEMICONDUCTOR MEMORY HAVING THE SAME, AND OPERATING ME...

FULL SEQUENCE PROGRAM FOR EDGE WORD LINE QUAD-LEVEL MEMORY CELLS

DETECTION OF LEAKAGE CURRENT IN FLASH MEMORY

PRESERVING BLOCKS EXPERIENCING PROGRAM FAILURE IN MEMORY DEVICES

MEMORY DEVICE AND OPERATION METHOD THEREOF

SEPARATE PEAK CURRENT CHECKPOINTS FOR CLOSED AND OPEN BLOCK READ IC...

NEGATIVE WORD LINE ENABLED PRE-BOOSTING STRATEGY TO IMPROVE NAND PR...

KNOWN-FAILURE ERROR HANDLING IN A MEMORY SUB-SYSTEM

DRIFT COMPENSATION FOR CODEWORDS IN MEMORY

MEMORY DEVICE AND ENHANCE PROGRAMMING METHOD THEREOF

PERFORMING DATA INTEGRITY CHECKS TO IDENTIFY DEFECTIVE WORDLINES

MEMORY DEVICE WITH HIGH CONTENT DENSITY AND ENCODING METHOD THEREOF

NON-VOLATILE MEMORY DEVICE

SEMICONDUCTOR MEMORY AND NONVOLATILE MEMORY

MEMORY DEVICE AND OPERATION METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME