FET configuration adapted for use as static memory cell

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CPC
Y10S257/903

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S257/00Active solid-state devices

Current Industry

Y10S257/903FET configuration adapted for use as static memory cell

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 11,785,759
- Issue date Oct 10, 2023
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 11,462,540
- Issue date Oct 4, 2022
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 10,916,547
- Issue date Feb 9, 2021
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with T-shaped contact
- Patent number 10,756,095
- Issue date Aug 25, 2020
- Texas Instruments Incorporated
- Theodore W. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with T-shaped contact
- Patent number 10,748,913
- Issue date Aug 18, 2020
- Texas Instruments Incorporated
- Theodore W. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 10,720,434
- Issue date Jul 21, 2020
- Intel Corporation
- Peter L. D. Chang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 10,381,350
- Issue date Aug 13, 2019
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with T-shaped contact
- Patent number 10,199,380
- Issue date Feb 5, 2019
- Texas Instruments Incorporated
- Theodore W. Houston
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SRAM cell with T-shaped contact
- Patent number 10,163,911
- Issue date Dec 25, 2018
- Texas Instruments Incorporated
- Theodore W. Houston
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device having sufficient process margin and method of...
- Patent number 9,673,195
- Issue date Jun 6, 2017
- Samsung Electronics Co., Ltd.
- Man-Hyoung Ryoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Butted contact shape to improve SRAM leakage current
- Patent number 9,337,205
- Issue date May 10, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Memory cell
- Patent number 9,337,204
- Issue date May 10, 2016
- University of Virginia Patent Foundation
- Benton H. Calhoun
- G11 - INFORMATION STORAGE
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 9,275,999
- Issue date Mar 1, 2016
- Intel Corporation
- Peter L. D. Chang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Cross-coupling of gate conductor line and active region in semicond...
- Patent number 9,263,457
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Viraj Y. Sardesai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device
- Patent number 9,230,969
- Issue date Jan 5, 2016
- Renesas Electronics Corporation
- Nobuo Tsuboi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
JFET devices with increased barrier height and methods of making same
- Patent number 9,202,871
- Issue date Dec 1, 2015
- Micron Technology, Inc.
- Chandra Mouli
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device including a thin film transistor and a capacitor
- Patent number 9,070,773
- Issue date Jun 30, 2015
- Semiconductor Energy Laboratory Co., Ltd.
- Akira Ishikawa
- G02 - OPTICS
Information Patent Grant
SRAM cell with individual electrical device threshold control
- Patent number 9,029,956
- Issue date May 12, 2015
- Global Foundries, Inc.
- Randy W. Mann
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual port SRAM having reduced cell size and rectangular shape
- Patent number 9,006,841
- Issue date Apr 14, 2015
- STMicroelectronics International N.V.
- Shishir Kumar
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Butted contact shape to improve SRAM leakage current
- Patent number 9,006,826
- Issue date Apr 14, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device
- Patent number 9,000,503
- Issue date Apr 7, 2015
- Renesas Electronics Corporation
- Nobuo Tsuboi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 8,980,707
- Issue date Mar 17, 2015
- Intel Corporation
- Peter L. D. Chang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of forming a finfet semiconductor device with undoped fins
- Patent number 8,969,932
- Issue date Mar 3, 2015
- GLOBALFOUNDRIES Inc.
- Andy C. Wei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Memory cell including unidirectional gate conductors and contacts
- Patent number 8,947,912
- Issue date Feb 3, 2015
- University of Virginia Licensing & Ventures Group
- Benton H. Calhoun
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device and method of fabricating the same
- Patent number 8,908,419
- Issue date Dec 9, 2014
- Renesas Electronics Corporation
- Hidemoto Tomita
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 8,884,373
- Issue date Nov 11, 2014
- Panasonic Corporation
- Yoshihiro Sato
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Shared contacts for MOSFET devices
- Patent number 8,878,307
- Issue date Nov 4, 2014
- Sony Corporation
- Koji Miyata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Cross-coupling of gate conductor line and active region in semicond...
- Patent number 8,853,700
- Issue date Oct 7, 2014
- International Business Machines Corporation
- Viraj Y. Sardesai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
JFET devices with increased barrier height and methods of making th...
- Patent number 8,723,235
- Issue date May 13, 2014
- Micron Technology, Inc.
- Chandra Mouli
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 8,692,331
- Issue date Apr 8, 2014
- Fujitsu Semiconductor Limited
- Masaki Okuno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20220415894
- Publication date Dec 29, 2022
- Intel Corporation
- Peter L.D. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20210159228
- Publication date May 27, 2021
- Intel Corporation
- Peter L.D. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20200312854
- Publication date Oct 1, 2020
- Intel Corporation
- Peter L.D. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20190386007
- Publication date Dec 19, 2019
- Intel Corporation
- Peter L.D. CHANG
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Application
SRAM CELL WITH T-SHAPED CONTACT
- Publication number 20190148386
- Publication date May 16, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Theodore W. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM CELL WITH T-SHAPED CONTACT
- Publication number 20190081051
- Publication date Mar 14, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Theodore W. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20190035790
- Publication date Jan 31, 2019
- Intel Corporation
- Peter L.D. CHANG
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Application
Shared contacts for mosfet devices
- Publication number 20140252471
- Publication date Sep 11, 2014
- Koji Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JFET Devices with Increased Barrier Height and Methods of Making Same
- Publication number 20140246680
- Publication date Sep 4, 2014
- Micron Technology, Inc.
- Chandra Mouli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SUFFICIENT PROCESS MARGIN AND METHOD OF...
- Publication number 20140231925
- Publication date Aug 21, 2014
- Man-Hyoung RYOO
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING A FINFET SEMICONDUCTOR DEVICE WITH UNDOPED FINS
- Publication number 20140159126
- Publication date Jun 12, 2014
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-COUPLING OF GATE CONDUCTOR LINE AND ACTIVE REGION IN SEMICOND...
- Publication number 20140113417
- Publication date Apr 24, 2014
- International Business Machines Corporation
- Viraj V. Sardesai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20140015021
- Publication date Jan 16, 2014
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUTTED CONTACT SHAPE TO IMPROVE SRAM LEAKAGE CURRENT
- Publication number 20130299905
- Publication date Nov 14, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20130292749
- Publication date Nov 7, 2013
- Masaki Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cell
- Publication number 20130242645
- Publication date Sep 19, 2013
- University of Virginia Patent Foundation
- Benton H. Calhoun
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20130234256
- Publication date Sep 12, 2013
- RENESAS ELECTRONICS CORPORATION
- Hidemoto TOMITA
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Device and Method for Preparing the Same
- Publication number 20130140577
- Publication date Jun 6, 2013
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Akira Ishikawa
- G02 - OPTICS
Information Patent Application
SRAM CELL WITH INDIVIDUAL ELECTRICAL DEVICE THRESHOLD CONTROL
- Publication number 20130107610
- Publication date May 2, 2013
- GLOBALFOUNDRIES INC.
- Randy W. Mann
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130056832
- Publication date Mar 7, 2013
- PANASONIC CORPORATION
- Yoshihiro SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-COUPLING OF GATE CONDUCTOR LINE AND ACTIVE REGION IN SEMICOND...
- Publication number 20130037864
- Publication date Feb 14, 2013
- International Business Machines Corporation
- Viraj Y. Sardesai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120299064
- Publication date Nov 29, 2012
- Renesas Electronics Corporation
- Nobuo TSUBOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20120267721
- Publication date Oct 25, 2012
- Peter L.D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JFET DEVICES WITH INCREASED BARRIER HEIGHT AND METHODS OF MAKING TH...
- Publication number 20120146049
- Publication date Jun 14, 2012
- Micron Technology, Inc.
- Chandra Mouli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTORS HAVING REDUCED DISTANCES BETWEEN GATE ELE...
- Publication number 20120126339
- Publication date May 24, 2012
- International Business Machines Corporation
- Robert C. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL PORT STATIC RANDOM ACCESS MEMORY CELL LAYOUT
- Publication number 20120086082
- Publication date Apr 12, 2012
- PIERRE MALINGE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20120083086
- Publication date Apr 5, 2012
- Masatomi Okanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20120063213
- Publication date Mar 15, 2012
- RENESAS ELECTRONICS CORPORATION
- Hidemoto Tomita
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20120043613
- Publication date Feb 23, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masaki Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110260218
- Publication date Oct 27, 2011
- Renesas Electronics Corporation
- Hideyuki OOKA
- H01 - BASIC ELECTRIC ELEMENTS

FET configuration adapted for use as static memory cell

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Floating body memory cell having gates favoring different conductiv...

Floating body memory cell having gates favoring different conductiv...

Floating body memory cell having gates favoring different conductiv...

SRAM cell with T-shaped contact

SRAM cell with T-shaped contact

Floating body memory cell having gates favoring different conductiv...

Floating body memory cell having gates favoring different conductiv...

SRAM cell with T-shaped contact

SRAM cell with T-shaped contact

Semiconductor device having sufficient process margin and method of...

Butted contact shape to improve SRAM leakage current

Memory cell

Floating body memory cell having gates favoring different conductiv...

Cross-coupling of gate conductor line and active region in semicond...

Semiconductor device

JFET devices with increased barrier height and methods of making same

Semiconductor device including a thin film transistor and a capacitor

SRAM cell with individual electrical device threshold control

Dual port SRAM having reduced cell size and rectangular shape

Butted contact shape to improve SRAM leakage current

Semiconductor device

Floating body memory cell having gates favoring different conductiv...

Methods of forming a finfet semiconductor device with undoped fins

Memory cell including unidirectional gate conductors and contacts

Semiconductor storage device and method of fabricating the same

Semiconductor device

Shared contacts for MOSFET devices

Cross-coupling of gate conductor line and active region in semicond...

JFET devices with increased barrier height and methods of making th...

Semiconductor device and manufacturing method of the same

Patents Applicationslast 30 patents

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

SRAM CELL WITH T-SHAPED CONTACT

SRAM CELL WITH T-SHAPED CONTACT

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

Shared contacts for mosfet devices

JFET Devices with Increased Barrier Height and Methods of Making Same

SEMICONDUCTOR DEVICE HAVING SUFFICIENT PROCESS MARGIN AND METHOD OF...

METHODS OF FORMING A FINFET SEMICONDUCTOR DEVICE WITH UNDOPED FINS

CROSS-COUPLING OF GATE CONDUCTOR LINE AND ACTIVE REGION IN SEMICOND...

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

BUTTED CONTACT SHAPE TO IMPROVE SRAM LEAKAGE CURRENT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Memory Cell

SEMICONDUCTOR STORAGE DEVICE AND METHOD OF FABRICATING THE SAME

Semiconductor Device and Method for Preparing the Same

SRAM CELL WITH INDIVIDUAL ELECTRICAL DEVICE THRESHOLD CONTROL

SEMICONDUCTOR DEVICE

CROSS-COUPLING OF GATE CONDUCTOR LINE AND ACTIVE REGION IN SEMICOND...

SEMICONDUCTOR DEVICE

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

JFET DEVICES WITH INCREASED BARRIER HEIGHT AND METHODS OF MAKING TH...

SEMICONDUCTOR TRANSISTORS HAVING REDUCED DISTANCES BETWEEN GATE ELE...

DUAL PORT STATIC RANDOM ACCESS MEMORY CELL LAYOUT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR STORAGE DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE