Active solid-state devices

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S257/00Active solid-state devices

Y10S257/90MOSFET type gate sidewall insulating spacer Y10S257/901MOSFET substrate bias Y10S257/902FET with metal source region Y10S257/903FET configuration adapted for use as static memory cell Y10S257/904with passive components Y10S257/905Plural dram cells share common contact or common trench Y10S257/906Dram with capacitor electrodes used for accessing Y10S257/907Folded bit line dram configuration Y10S257/908Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines Y10S257/909Macrocell arrays Y10S257/91Diode arrays Y10S257/911Light sensitive array adapted to be scanned by electron beam Y10S257/912Charge transfer device using both electron and hole signal carriers Y10S257/913with means to absorb or localize unwanted impurities or defects from semiconductors Y10S257/914Polysilicon containing oxygen, nitrogen, or carbon Y10S257/915with titanium nitride portion or region Y10S257/916Narrow band gap semiconductor material, <<1ev Y10S257/917Plural dopants of same conductivity type in same region Y10S257/918Light emitting regenerative switching device Y10S257/919Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics Y10S257/92Conductor layers on different levels connected in parallel Y10S257/921Radiation hardened semiconductor device Y10S257/922with means to prevent inspection of or tampering with an integrated circuit Y10S257/923with means to optimize electrical conductor current carrying capacity Y10S257/924with passive device Y10S257/925Bridge rectifier module Y10S257/926Elongated lead extending axially through another elongated lead Y10S257/927Different doping levels in different parts of PN junction to produce shaped depletion layer Y10S257/928with shorted PN or schottky junction other than emitter junction Y10S257/929PN junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer Y10S257/93Thermoelectric