FET with metal source region

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CPC
Y10S257/902

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S257/00Active solid-state devices

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Y10S257/902FET with metal source region

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Patents Grantslast 30 patents

Information Patent Grant
Butted contact shape to improve SRAM leakage current
- Patent number 9,337,205
- Issue date May 10, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
JFET devices with increased barrier height and methods of making same
- Patent number 9,202,871
- Issue date Dec 1, 2015
- Micron Technology, Inc.
- Chandra Mouli
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Butted contact shape to improve SRAM leakage current
- Patent number 9,006,826
- Issue date Apr 14, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Thin film metal-dielectric-metal transistor
- Patent number 8,809,861
- Issue date Aug 19, 2014
- STMicroelectronics Pte Ltd
- Olivier Le Neel
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
JFET devices with increased barrier height and methods of making th...
- Patent number 8,723,235
- Issue date May 13, 2014
- Micron Technology, Inc.
- Chandra Mouli
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
JFET devices with increased barrier height and methods of making same
- Patent number 8,120,072
- Issue date Feb 21, 2012
- Micron Technology, Inc.
- Chandra Mouli
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Bi-layer nFET embedded stressor element and integration to enhance...
- Patent number 8,035,141
- Issue date Oct 11, 2011
- International Business Machines Corporation
- Kevin K. Chan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device with heat-resistant gate
- Patent number 7,868,360
- Issue date Jan 11, 2011
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G02 - OPTICS
Information Patent Grant
MOSFETS comprising source/drain recesses with slanted sidewall surf...
- Patent number 7,816,261
- Issue date Oct 19, 2010
- International Business Machines Corporation
- Huilong Zhu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Spin transistor using stray magnetic field
- Patent number 7,608,901
- Issue date Oct 27, 2009
- Korea Institute of Science and Technology
- Hyun Cheol Koo
- G11 - INFORMATION STORAGE
Information Patent Grant
MOSFETs comprising source/drain recesses with slanted sidewall surf...
- Patent number 7,560,758
- Issue date Jul 14, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating same
- Patent number 7,371,667
- Issue date May 13, 2008
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for reducing parasitic capacitance produced in...
- Patent number 7,259,432
- Issue date Aug 21, 2007
- Matsushita Electric Industrisl Co., Ltd.
- Masaki Tamaru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating same
- Patent number 7,157,753
- Issue date Jan 2, 2007
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating same
- Patent number 7,081,646
- Issue date Jul 25, 2006
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modifying switching field characteristics of magnetic tu...
- Patent number 6,828,610
- Issue date Dec 7, 2004
- Hewlett-Packard Development Company, L.P.
- Thomas Anthony
- G11 - INFORMATION STORAGE
Information Patent Grant
Field effect transistor and method for producing a field effect tra...
- Patent number 6,809,379
- Issue date Oct 26, 2004
- Infineon Technologies AG
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,713,820
- Issue date Mar 30, 2004
- Seiko Instruments Inc.
- Toshihiko Omi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modifying switching field characteristics of magnetic tu...
- Patent number 6,649,423
- Issue date Nov 18, 2003
- Hewlett-Packard Development Company, L.P.
- Thomas Anthony
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of fabricating same
- Patent number 6,303,415
- Issue date Oct 16, 2001
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G02 - OPTICS
Information Patent Grant
Integrated circuit transistor with low-resistivity source/drain str...
- Patent number 6,180,987
- Issue date Jan 30, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical poly load device in 4T SRAM technology
- Patent number 6,130,462
- Issue date Oct 10, 2000
- Worldwide Semiconductor Manufacturing Corp.
- Ching-Nan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance GaAs field effect transistor structure
- Patent number 6,083,782
- Issue date Jul 4, 2000
- SamSung Electronics Co., Ltd.
- Jong Boong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with low resistance metal source and drain vertically di...
- Patent number 6,057,583
- Issue date May 2, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance gaas field effect transistor structure
- Patent number 5,994,727
- Issue date Nov 30, 1999
- SamSung Electronics Co., Ltd.
- Jong Boong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky tunneling device
- Patent number 5,962,893
- Issue date Oct 5, 1999
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge effect transistor and a method for manufacturing the same
- Patent number 5,942,790
- Issue date Aug 24, 1999
- Electronics and Telecommunications Research Institute
- Kang Ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,428,234
- Issue date Jun 27, 1995
- Sony Corporation
- Hirofumi Sumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component
- Patent number 5,319,237
- Issue date Jun 7, 1994
- Thomson Composants Microondes
- Patrick Legros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel injection semiconductor devices with Schottky barriers
- Patent number 5,177,568
- Issue date Jan 5, 1993
- Hitachi, Ltd.
- Hideo Honma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
JFET Devices with Increased Barrier Height and Methods of Making Same
- Publication number 20140246680
- Publication date Sep 4, 2014
- Micron Technology, Inc.
- Chandra Mouli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUTTED CONTACT SHAPE TO IMPROVE SRAM LEAKAGE CURRENT
- Publication number 20130299905
- Publication date Nov 14, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM METAL-DIELECTRIC-METAL TRANSISTOR
- Publication number 20120168754
- Publication date Jul 5, 2012
- STMicroelectronics Pte Ltd
- Olivier Le Neel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JFET DEVICES WITH INCREASED BARRIER HEIGHT AND METHODS OF MAKING TH...
- Publication number 20120146049
- Publication date Jun 14, 2012
- Micron Technology, Inc.
- Chandra Mouli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-LAYER nFET EMBEDDED STRESSOR ELEMENT AND INTEGRATION TO ENHANCE...
- Publication number 20110095343
- Publication date Apr 28, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
- Publication number 20110095346
- Publication date Apr 28, 2011
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G02 - OPTICS
Information Patent Application
JFET Devices with Increased Barrier Height and Methods of Making Same
- Publication number 20100019249
- Publication date Jan 28, 2010
- Micron Technology, Inc.
- Chandra Mouli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating same
- Publication number 20090026507
- Publication date Jan 29, 2009
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G02 - OPTICS
Information Patent Application
Spin Transistor Using Stray Magnetic Field
- Publication number 20080169492
- Publication date Jul 17, 2008
- Korea Institute of Science and Technology
- Hyun Cheol Koo
- G11 - INFORMATION STORAGE
Information Patent Application
MOSFETS COMPRISING SOURCE/DRAIN RECESSES WITH SLANTED SIDEWALL SURF...
- Publication number 20080057710
- Publication date Mar 6, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFETS COMPRISING SOURCE/DRAIN RECESSES WITH SLANTED SIDEWALL SURF...
- Publication number 20080001260
- Publication date Jan 3, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating same
- Publication number 20070034913
- Publication date Feb 15, 2007
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G02 - OPTICS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20050194637
- Publication date Sep 8, 2005
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Masaki Tamaru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating same
- Publication number 20050045950
- Publication date Mar 3, 2005
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G02 - OPTICS
Information Patent Application
Method for modifying switching field characteristics of magnetic tu...
- Publication number 20040129928
- Publication date Jul 8, 2004
- Thomas Anthony
- G11 - INFORMATION STORAGE
Information Patent Application
Field effect transistor and method for producing a field effect tra...
- Publication number 20030155591
- Publication date Aug 21, 2003
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for modifying switching field characteristics of magnetic tu...
- Publication number 20030067802
- Publication date Apr 10, 2003
- Thomas Anthony
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device
- Publication number 20020153576
- Publication date Oct 24, 2002
- Toshihiko Omi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating same
- Publication number 20020006712
- Publication date Jan 17, 2002
- Shunpei Yamazaki
- G02 - OPTICS

FET with metal source region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Butted contact shape to improve SRAM leakage current

JFET devices with increased barrier height and methods of making same

Butted contact shape to improve SRAM leakage current

Thin film metal-dielectric-metal transistor

JFET devices with increased barrier height and methods of making th...

JFET devices with increased barrier height and methods of making same

Bi-layer nFET embedded stressor element and integration to enhance...

Semiconductor device with heat-resistant gate

MOSFETS comprising source/drain recesses with slanted sidewall surf...

Spin transistor using stray magnetic field

MOSFETs comprising source/drain recesses with slanted sidewall surf...

Semiconductor device and method of fabricating same

Semiconductor device for reducing parasitic capacitance produced in...

Semiconductor device and method of fabricating same

Semiconductor device and method of fabricating same

Method for modifying switching field characteristics of magnetic tu...

Field effect transistor and method for producing a field effect tra...

Semiconductor device

Method for modifying switching field characteristics of magnetic tu...

Semiconductor device and method of fabricating same

Integrated circuit transistor with low-resistivity source/drain str...

Vertical poly load device in 4T SRAM technology

High performance GaAs field effect transistor structure

Transistor with low resistance metal source and drain vertically di...

High performance gaas field effect transistor structure

Schottky tunneling device

Charge effect transistor and a method for manufacturing the same

Semiconductor device

Power semiconductor component

Tunnel injection semiconductor devices with Schottky barriers

Patents Applicationslast 30 patents

JFET Devices with Increased Barrier Height and Methods of Making Same

BUTTED CONTACT SHAPE TO IMPROVE SRAM LEAKAGE CURRENT

THIN FILM METAL-DIELECTRIC-METAL TRANSISTOR

JFET DEVICES WITH INCREASED BARRIER HEIGHT AND METHODS OF MAKING TH...

BI-LAYER nFET EMBEDDED STRESSOR ELEMENT AND INTEGRATION TO ENHANCE...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME

JFET Devices with Increased Barrier Height and Methods of Making Same

Semiconductor device and method of fabricating same

Spin Transistor Using Stray Magnetic Field

MOSFETS COMPRISING SOURCE/DRAIN RECESSES WITH SLANTED SIDEWALL SURF...

MOSFETS COMPRISING SOURCE/DRAIN RECESSES WITH SLANTED SIDEWALL SURF...

Semiconductor device and method of fabricating same

Semiconductor device and method for fabricating the same

Semiconductor device and method of fabricating same

Method for modifying switching field characteristics of magnetic tu...

Field effect transistor and method for producing a field effect tra...

Method for modifying switching field characteristics of magnetic tu...

Semiconductor device

Semiconductor device and method of fabricating same