Field effect transistors fets

Industry

CPC
Y10S148/053

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/053Field effect transistors fets

Industries

Patents Grantslast 30 patents

Information Patent Grant
Formation of low resistance, ultra shallow LDD junctions employing...
- Patent number 6,087,209
- Issue date Jul 11, 2000
- Advanced Micro Devices, Inc.
- Geoffrey Choh-Fei Yeap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating staggered thin film transistor with an improv...
- Patent number 6,087,205
- Issue date Jul 11, 2000
- NEC Corporation
- Shuki Yamamori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of producing thin film transistor
- Patent number 6,037,195
- Issue date Mar 14, 2000
- Kabushiki Kaisha Toshiba
- Shigetaka Toriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staggered thin film transistor with transparent electrodes and an i...
- Patent number 5,864,149
- Issue date Jan 26, 1999
- NEC Corporation
- Shuki Yamamori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of high quality conformal silicon oxide thin films on gl...
- Patent number 5,861,197
- Issue date Jan 19, 1999
- Applied Materials, Inc.
- Kam Law
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition of high quality conformal silicon oxide thin films for t...
- Patent number 5,851,602
- Issue date Dec 22, 1998
- Applied Materials, Inc.
- Kam Law
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of producing a semiconductor on insulating substrate, and a...
- Patent number 5,668,046
- Issue date Sep 16, 1997
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating VDMOS transistor with improved breakdown cha...
- Patent number 5,589,405
- Issue date Dec 31, 1996
- SGS-Thomson Microelectronics, S.r.l.
- Claudio Contiero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro MIS type FET and manufacturing process therefor
- Patent number 5,448,093
- Issue date Sep 5, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Kusunoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS transistor with improved breakdown characteristics
- Patent number 5,430,316
- Issue date Jul 4, 1995
- SGS-Thomson Microeletronics, S.r.l.
- Claudio Contiero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor on insulating substrate, and a...
- Patent number 5,427,976
- Issue date Jun 27, 1995
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned complementary HFETS
- Patent number 5,411,903
- Issue date May 2, 1995
- Motorola, Inc.
- Schyi-yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process for a micro MIS type FET
- Patent number 5,330,923
- Issue date Jul 19, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Kusunoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect devices with ultra-short gates
- Patent number 5,311,045
- Issue date May 10, 1994
- AT&T Bell Laboratories
- Kirk W. Baldwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a field effect transistor
- Patent number 5,298,445
- Issue date Mar 29, 1994
- NEC Corporation
- Kazunori Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making substantially linear field-effect transistor
- Patent number 5,266,506
- Issue date Nov 30, 1993
- AT&T Bell Laboratories
- Donald R. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,238,871
- Issue date Aug 24, 1993
- Seiko Epson Corporation
- Masato Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making field effect devices with ultra-short gates
- Patent number 5,219,772
- Issue date Jun 15, 1993
- AT&T Bell Laboratories
- Kirk W. Baldwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a stacked semiconductor structure
- Patent number 5,213,990
- Issue date May 25, 1993
- Texas Instruments, Incorporated
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro MIS type FET and manufacturing process therefor
- Patent number 5,196,908
- Issue date Mar 23, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Kusunoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method in vertical integration
- Patent number 5,166,091
- Issue date Nov 24, 1992
- AT&T Bell Laboratories
- Nadia Lifshitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having control and current electrodes posit...
- Patent number 5,158,901
- Issue date Oct 27, 1992
- Motorola, Inc.
- Yasunobu Kosa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor apparatus
- Patent number 5,145,796
- Issue date Sep 8, 1992
- Sharp Kabushiki Kaisha
- Alberto Adan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a thin film transistor
- Patent number 5,130,264
- Issue date Jul 14, 1992
- General Motors Corporation
- John R. Troxell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction method and structure
- Patent number 5,116,774
- Issue date May 26, 1992
- Motorola, Inc.
- Jenn-Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a recessed gate MOSFET device structure
- Patent number 5,108,937
- Issue date Apr 28, 1992
- Taiwan Semiconductor Manufacturing Company
- Yu-Hsein Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,093,273
- Issue date Mar 3, 1992
- Kabushiki Kaisha Toshiba
- Katsuya Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor embedded layer technology utilizing selective epitaxi...
- Patent number 5,032,538
- Issue date Jul 16, 1991
- Massachusetts Institute of Technology
- Carl O. Bozler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a field effect transistor integrated with an opto...
- Patent number 5,021,361
- Issue date Jun 4, 1991
- Kabushiki Kaisha Toshiba
- Jun'ichi Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a latch up free, high voltage, CMOS bulk process f...
- Patent number 5,006,477
- Issue date Apr 9, 1991
- Hughes Aircraft Company
- Joseph E. Farb
- H01 - BASIC ELECTRIC ELEMENTS

Field effect transistors fets

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Formation of low resistance, ultra shallow LDD junctions employing...

Method of fabricating staggered thin film transistor with an improv...

Process of producing thin film transistor

Staggered thin film transistor with transparent electrodes and an i...

Deposition of high quality conformal silicon oxide thin films on gl...

Deposition of high quality conformal silicon oxide thin films for t...

Method of producing a semiconductor on insulating substrate, and a...

Method for fabricating VDMOS transistor with improved breakdown cha...

Micro MIS type FET and manufacturing process therefor

VDMOS transistor with improved breakdown characteristics

Method of producing a semiconductor on insulating substrate, and a...

Self-aligned complementary HFETS

Manufacturing process for a micro MIS type FET

Field effect devices with ultra-short gates

Method for fabricating a field effect transistor

Method of making substantially linear field-effect transistor

Method of manufacturing a semiconductor device

Method for making field effect devices with ultra-short gates

Method for forming a stacked semiconductor structure

Micro MIS type FET and manufacturing process therefor

Fabrication method in vertical integration

Field effect transistor having control and current electrodes posit...

Method for manufacturing a semiconductor apparatus

Method of making a thin film transistor

Heterojunction method and structure

Method of making a recessed gate MOSFET device structure

Method of manufacturing a semiconductor device

Semiconductor embedded layer technology utilizing selective epitaxi...

Method for making a field effect transistor integrated with an opto...

Method of making a latch up free, high voltage, CMOS bulk process f...