Floating gate memory programmed by reverse programming

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CPC
G11C2216/28

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2216/00Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups

Current Industry

G11C2216/28Floating gate memory programmed by reverse programming

Industries

Patents Grantslast 30 patents

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Memory device and operating method thereof
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Concurrent multi-state program verify for non-volatile memory
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- Issue date May 5, 2020
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Memory device and systems and methods for selecting memory cells in...
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Selecting memory cells using source lines
- Patent number 9,142,306
- Issue date Sep 22, 2015
- Atmel Corporation
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
NOR flash memory cell with high storage density
- Patent number 7,476,586
- Issue date Jan 13, 2009
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Grant
NOR flash memory cell with high storage density
- Patent number 7,348,237
- Issue date Mar 25, 2008
- Micron Technology, Inc.
- Leonard Forbes
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Nor flash memory cell with high storage density
- Patent number 7,113,429
- Issue date Sep 26, 2006
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Grant
NOR flash memory cell with high storage density
- Patent number 6,996,009
- Issue date Feb 7, 2006
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Grant
3-step write operation nonvolatile semiconductor one-transistor, no...
- Patent number 6,556,481
- Issue date Apr 29, 2003
- Aplus Flash Technology, Inc.
- Fu-Chang Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming method for a memory cell
- Patent number 6,236,595
- Issue date May 22, 2001
- Microchip Technology Incorporated
- Donald S. Gerber
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Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 6,118,695
- Issue date Sep 12, 2000
- Sanyo Electric Co., Ltd.
- Akira Yoneyama
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Information Patent Grant
Semiconductor storage device capable of accurately collectively exe...
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- Issue date Jun 27, 2000
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- Yoshiji Ohta
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Information Patent Grant
Semiconductor memory array with buried drain lines and methods ther...
- Patent number 5,986,934
- Issue date Nov 16, 1999
- Winbond Electronics Corp.I
- Dah-Bin Kao
- G11 - INFORMATION STORAGE
Information Patent Grant
Single transistor flash electrically programmable memory cell in wh...
- Patent number 5,396,459
- Issue date Mar 7, 1995
- Sony Corporation
- Hideki Arakawa
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Information Patent Grant
Method for reverse programming of a flash EEPROM
- Patent number 5,357,463
- Issue date Oct 18, 1994
- Micron Semiconductor, Inc.
- Wayne I. Kinney
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Information Patent Grant
Method and apparatus for programming electrical erasable programmab...
- Patent number 5,323,351
- Issue date Jun 21, 1994
- Nexcom Technology, Inc.
- Nagesh Challa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Flash-type nonvolatile semiconductor memory having precise erasing...
- Patent number 5,274,599
- Issue date Dec 28, 1993
- Fujitsu Limited
- Taiji Ema
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable programmable read-only memory
- Patent number 4,377,857
- Issue date Mar 22, 1983
- Fairchild Camera and Instrument
- Andrew C. Tickle
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORIES AND OPERATION METHODS THEREOF, MEMORY SYSTEMS AND ELECTRON...
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- Jiayin Han
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTING MEMORY CELLS
- Publication number 20140198571
- Publication date Jul 17, 2014
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Application
NOR FLASH MEMORY CELL WITH HIGH STORAGE DENSITY
- Publication number 20070015331
- Publication date Jan 18, 2007
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Application
Nor flash memory cell with high storage density
- Publication number 20050085040
- Publication date Apr 21, 2005
- Micron Technology, Inc.
- Leonard Forbes
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Information Patent Application
Nor flash memory cell with high storage density
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- Publication date Apr 21, 2005
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Nor flash memory cell with high storage density
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- Publication date Dec 25, 2003
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE

Floating gate memory programmed by reverse programming

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device and operating method thereof

Concurrent multi-state program verify for non-volatile memory

Memory device and systems and methods for selecting memory cells in...

Selecting memory cells using source lines

NOR flash memory cell with high storage density

NOR flash memory cell with high storage density

Nor flash memory cell with high storage density

NOR flash memory cell with high storage density

3-step write operation nonvolatile semiconductor one-transistor, no...

Programming method for a memory cell

Nonvolatile semiconductor memory device

Semiconductor storage device capable of accurately collectively exe...

Semiconductor memory array with buried drain lines and methods ther...

Single transistor flash electrically programmable memory cell in wh...

Method for reverse programming of a flash EEPROM

Method and apparatus for programming electrical erasable programmab...

Flash-type nonvolatile semiconductor memory having precise erasing...

Electrically erasable programmable read-only memory

Patents Applicationslast 30 patents

MEMORIES AND OPERATION METHODS THEREOF, MEMORY SYSTEMS AND ELECTRON...

SELECTING MEMORY CELLS

NOR FLASH MEMORY CELL WITH HIGH STORAGE DENSITY

Nor flash memory cell with high storage density

Nor flash memory cell with high storage density

Nor flash memory cell with high storage density