Fluid growth doping control

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CPC
Y10S438/925

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/925Fluid growth doping control

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a high-voltage transistor with an extended dr...
- Patent number 8,940,605
- Issue date Jan 27, 2015
- Power Integrations, Inc.
- Donald Ray Disney
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods for controlling wafer curvature
- Patent number 8,918,988
- Issue date Dec 30, 2014
- International Business Machines Corporation
- Mohammed Fazil Fayaz
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods and structures for controlling wafer curvature
- Patent number 8,299,615
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Mohammed Fazil Fayaz
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of fabricating a high-voltage transistor with an extended dr...
- Patent number 7,998,817
- Issue date Aug 16, 2011
- Power Integrations, Inc.
- Donald Ray Disney
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of fabricating a high-voltage transistor with an extended dr...
- Patent number 7,745,291
- Issue date Jun 29, 2010
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-aligned double pattern
- Patent number 7,531,456
- Issue date May 12, 2009
- Samsung Electronics Co., Ltd.
- Byoung-Ho Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage vertical transistor with a multi-gradient drain doping...
- Patent number 7,459,366
- Issue date Dec 2, 2008
- Power Integrations, Inc.
- Sujit Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage vertical transistor with a multi-gradient drain doping...
- Patent number 7,335,944
- Issue date Feb 26, 2008
- Power Integrations, Inc.
- Sujit Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a high-voltage transistor with an extended dr...
- Patent number 7,253,042
- Issue date Aug 7, 2007
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage vertical transistor with a multi-gradient drain doping...
- Patent number 7,221,011
- Issue date May 22, 2007
- Power Integrations, Inc.
- Sujit Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of B-doped silicon film by LPCVD method using BCI3 and...
- Patent number 6,905,963
- Issue date Jun 14, 2005
- Hitachi Kokusai Electric, Inc.
- Takaaki Noda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating a high-voltage transistor with a multi-layere...
- Patent number 6,838,346
- Issue date Jan 4, 2005
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a high-voltage transistor with a multi-layere...
- Patent number 6,750,105
- Issue date Jun 15, 2004
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a high-voltage transistor with a multi-layere...
- Patent number 6,667,213
- Issue date Dec 23, 2003
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for growing layer on one surface of wafer
- Patent number 6,660,615
- Issue date Dec 9, 2003
- Windbond Electronics Corp.
- Ming-Kwei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a high-voltage transistor with a multi-layere...
- Patent number 6,635,544
- Issue date Oct 21, 2003
- Power Intergrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for growing layer on one surface of wafer
- Patent number 6,235,116
- Issue date May 22, 2001
- Winbond Electronics Corp.
- Ming-Kwei Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
FETs having lightly doped drain regions that are shaped with counte...
- Patent number 6,180,470
- Issue date Jan 30, 2001
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a carbon-doped compound semiconductor layer
- Patent number 6,096,617
- Issue date Aug 1, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Hirotaka Kizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for carrying semiconductor devices
- Patent number 6,078,845
- Issue date Jun 20, 2000
- Schlumberger Technologies, Inc.
- Daniel J. Friedman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device
- Patent number 6,036,772
- Issue date Mar 14, 2000
- Sony Corporation
- Tomonori Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating compound semiconductor device and optical sem...
- Patent number 6,034,983
- Issue date Mar 7, 2000
- Fujitsu Limited
- Takuya Fujii
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabricating compound semiconductor by varying ratio of stagnant lay...
- Patent number 5,937,273
- Issue date Aug 10, 1999
- Fujitsu Limited
- Takuya Fujii
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for depositing doped amorphous or polycrystalline silicon on...
- Patent number 5,789,030
- Issue date Aug 4, 1998
- Micron Technology, Inc.
- J. Brett Rolfson
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Compound semiconductor light emitting device and method of preparin...
- Patent number 5,756,374
- Issue date May 26, 1998
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semi-conductors and controlled doping thereof
- Patent number 5,709,745
- Issue date Jan 20, 1998
- Ohio Aerospace Institute
- David J. Larkin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor light emitting device and method of preparin...
- Patent number 5,665,986
- Issue date Sep 9, 1997
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal growing method
- Patent number 5,656,540
- Issue date Aug 12, 1997
- Optoelectronics Technology Research Corporation
- Yasuhiko Nomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming doped film
- Patent number 5,654,230
- Issue date Aug 5, 1997
- Tokyo Electron Limited
- Shinichi Jintate
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating semiconductor laser
- Patent number 5,573,976
- Issue date Nov 12, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Manabu Kato
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND STRUCTURES FOR CONTROLLING WAFER CURVATURE
- Publication number 20120329265
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Mohammed Fazil Fayaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a high-voltage transistor with an extended dr...
- Publication number 20120015491
- Publication date Jan 19, 2012
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR CONTROLLING WAFER CURVATURE
- Publication number 20110049723
- Publication date Mar 3, 2011
- International Business Machines Corporation
- Mohammed Fazil Fayaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a high-voltage transistor with an extended dr...
- Publication number 20090233407
- Publication date Sep 17, 2009
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage vertical transistor with a multi-gradient drain doping...
- Publication number 20080102581
- Publication date May 1, 2008
- Power Integrations, Inc.
- Sujit Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a high-voltage transistor with an extended dr...
- Publication number 20070293002
- Publication date Dec 20, 2007
- Power Intergrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming self-aligned double pattern
- Publication number 20070148968
- Publication date Jun 28, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Byoung-Ho Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage vertical transistor with a multi-gradient drain doping...
- Publication number 20070132013
- Publication date Jun 14, 2007
- Power Integrations, Inc.
- Sujit Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage vertical transistor with a multi-gradient drain doping...
- Publication number 20050133858
- Publication date Jun 23, 2005
- Power Integrations, Inc.
- Sujit Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a high-voltage transistor with an extended dr...
- Publication number 20050104121
- Publication date May 19, 2005
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a high-voltage transistor with a multi-layere...
- Publication number 20040082122
- Publication date Apr 29, 2004
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor device and a substrate proce...
- Publication number 20030077920
- Publication date Apr 24, 2003
- Hitachi Kokusai Electric Inc.
- Takaaki Noda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of fabricating a high-voltage transistor with a multi-layere...
- Publication number 20030057524
- Publication date Mar 27, 2003
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a high-voltage transistor with a multi-layere...
- Publication number 20030060001
- Publication date Mar 27, 2003
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a high-voltage transistor with a multi-layere...
- Publication number 20030049930
- Publication date Mar 13, 2003
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS

Fluid growth doping control

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of fabricating a high-voltage transistor with an extended dr...

Methods for controlling wafer curvature

Methods and structures for controlling wafer curvature

Method of fabricating a high-voltage transistor with an extended dr...

Method of fabricating a high-voltage transistor with an extended dr...

Method of forming self-aligned double pattern

High-voltage vertical transistor with a multi-gradient drain doping...

High-voltage vertical transistor with a multi-gradient drain doping...

Method of fabricating a high-voltage transistor with an extended dr...

High-voltage vertical transistor with a multi-gradient drain doping...

Fabrication of B-doped silicon film by LPCVD method using BCI3 and...

Method of fabricating a high-voltage transistor with a multi-layere...

Method of fabricating a high-voltage transistor with a multi-layere...

Method of fabricating a high-voltage transistor with a multi-layere...

Method and apparatus for growing layer on one surface of wafer

Method of fabricating a high-voltage transistor with a multi-layere...

Method and apparatus for growing layer on one surface of wafer

FETs having lightly doped drain regions that are shaped with counte...

Method of manufacturing a carbon-doped compound semiconductor layer

Apparatus for carrying semiconductor devices

Method for making semiconductor device

Method of fabricating compound semiconductor device and optical sem...

Fabricating compound semiconductor by varying ratio of stagnant lay...

Method for depositing doped amorphous or polycrystalline silicon on...

Compound semiconductor light emitting device and method of preparin...

Compound semi-conductors and controlled doping thereof

Compound semiconductor light emitting device and method of preparin...

Semiconductor crystal growing method

Method of forming doped film

Method of fabricating semiconductor laser

Patents Applicationslast 30 patents

METHODS AND STRUCTURES FOR CONTROLLING WAFER CURVATURE

Method of fabricating a high-voltage transistor with an extended dr...

METHODS AND STRUCTURES FOR CONTROLLING WAFER CURVATURE

Method of fabricating a high-voltage transistor with an extended dr...

High-voltage vertical transistor with a multi-gradient drain doping...

Method of fabricating a high-voltage transistor with an extended dr...

Method of forming self-aligned double pattern

High-voltage vertical transistor with a multi-gradient drain doping...

High-voltage vertical transistor with a multi-gradient drain doping...

Method of fabricating a high-voltage transistor with an extended dr...

Method of fabricating a high-voltage transistor with a multi-layere...

Method for fabricating a semiconductor device and a substrate proce...

Method of fabricating a high-voltage transistor with a multi-layere...

Method of fabricating a high-voltage transistor with a multi-layere...

Method of fabricating a high-voltage transistor with a multi-layere...