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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/746for AIII-BV integrated circuits

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Patents Grantslast 30 patents

Information Patent Grant
Enhanced bonding between III-V material and oxide material
- Patent number 12,119,309
- Issue date Oct 15, 2024
- OpenLight Photonics, Inc.
- Avi Feshali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride device for high frequency and high power applications
- Patent number 12,009,207
- Issue date Jun 11, 2024
- Analog Devices, Inc.
- Puneet Srivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN devices
- Patent number 11,929,364
- Issue date Mar 12, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced bonding between III-V material and oxide material
- Patent number 11,309,261
- Issue date Apr 19, 2022
- Juniper Networks, Inc.
- Avi Feshali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel template assisted wafer bonding
- Patent number 11,183,492
- Issue date Nov 23, 2021
- Skorpios Technologies, Inc.
- Stephen B. Krasulick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN-on-silicon devices
- Patent number 11,158,575
- Issue date Oct 26, 2021
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high-electron mobility transistors with deep implan...
- Patent number 10,840,334
- Issue date Nov 17, 2020
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with doped layers on fins and fabrication m...
- Patent number 10,804,260
- Issue date Oct 13, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power compound semiconductor field effect transistor devices w...
- Patent number 10,756,206
- Issue date Aug 25, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth method for fabricating wide-bandgap transistors, and devic...
- Patent number 10,553,697
- Issue date Feb 4, 2020
- National Technology & Engineering Solutions of Sandia, LLC
- Andrew Armstrong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced bonding between III-V material and oxide material
- Patent number 10,541,214
- Issue date Jan 21, 2020
- Juniper Networks, Inc.
- Avi Feshali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with deep charge carrier gas cont...
- Patent number 10,516,023
- Issue date Dec 24, 2019
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth method for fabricating wide-bandgap transistors, and devic...
- Patent number 10,388,753
- Issue date Aug 20, 2019
- National Technology & Engineering Solutions of Sandia, LLC
- Andrew Armstrong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method of manufacture
- Patent number 10,276,713
- Issue date Apr 30, 2019
- Semiconductor Components Industries, LLC
- Chun-Li Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-semiconductor heterodimension field effect transistors (MESHF...
- Patent number 10,153,273
- Issue date Dec 11, 2018
- Northrop Grumman Systems Corporation
- Roger S. Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel template assisted wafer bonding
- Patent number 9,922,967
- Issue date Mar 20, 2018
- SKORPIOS TECHNOLOGIES, INC.
- Stephen B. Krasulick
- G02 - OPTICS
Information Patent Grant
Semiconductor component and method of manufacture
- Patent number 9,627,530
- Issue date Apr 18, 2017
- Semiconductor Components Industries, LLC
- Chun-Li Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method
- Patent number 9,257,513
- Issue date Feb 9, 2016
- Semiconductor Components Industries, LLC
- Chun-Li Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, an integrated circuit including a semicond...
- Patent number 8,390,091
- Issue date Mar 5, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making selective subcollector heterojunction bipolar tra...
- Patent number 5,672,522
- Issue date Sep 30, 1997
- TRW Inc.
- Dwight Christopher Streit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminated upper cladding structure for a light-emitting device
- Patent number 5,400,354
- Issue date Mar 21, 1995
- Michael Ludowise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming substrate vias in a GaAs wafer
- Patent number 5,292,686
- Issue date Mar 8, 1994
- TriQuint Semiconductor, Inc.
- Susan Riley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor made of 3-5 group semiconductor materials on a silicon s...
- Patent number 5,138,407
- Issue date Aug 11, 1992
- Thomson-CSF
- Jean-Pierre Hirtz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for grounding flat devices and integrated circuits
- Patent number 4,700,467
- Issue date Oct 20, 1987
- Telettra-Telefonia Eletrronica e Radio, S.p.A.
- Giampiero Donzelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep buried layers for semiconductor devices
- Patent number 3,990,093
- Issue date Nov 2, 1976
- General Electric Company
- Harvey E. Cline
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY
- Publication number 20240204055
- Publication date Jun 20, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES
- Publication number 20240178220
- Publication date May 30, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED BONDING BETWEEN III-V MATERIAL AND OXIDE MATERIAL
- Publication number 20220270986
- Publication date Aug 25, 2022
- Juniper Networks, Inc.
- Avi Feshali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES
- Publication number 20220005764
- Publication date Jan 6, 2022
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED BONDING BETWEEN III-V MATERIAL AND OXIDE MATERIAL
- Publication number 20200118946
- Publication date Apr 16, 2020
- Juniper Networks, Inc.
- Avi Feshali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CAPACITANCE REDUCTION IN GaN-ON-SILICON DEVICES
- Publication number 20190371729
- Publication date Dec 5, 2019
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED BONDING BETWEEN III-V MATERIAL AND OXIDE MATERIAL
- Publication number 20190333873
- Publication date Oct 31, 2019
- Juniper Networks, Inc.
- Avi Feshali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Deep Charge Carrier Gas Cont...
- Publication number 20190280093
- Publication date Sep 12, 2019
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride High-Electron Mobility Transistors with Deep Implan...
- Publication number 20190229187
- Publication date Jul 25, 2019
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR DEVICES W...
- Publication number 20190013398
- Publication date Jan 10, 2019
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILEVEL TEMPLATE ASSISTED WAFER BONDING
- Publication number 20180308834
- Publication date Oct 25, 2018
- Skorpios Technologies, Inc.
- Stephen B. Krasulick
- G02 - OPTICS
Information Patent Application
METHOD AND SYSTEM FOR TEMPLATE ASSISTED WAFER BONDING USING PEDESTALS
- Publication number 20160111407
- Publication date Apr 21, 2016
- Skorpios Technologies, Inc.
- Stephen B. Krasulick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHOD
- Publication number 20160043185
- Publication date Feb 11, 2016
- Semiconductor Components Industries, LLC
- Chun-Li Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, AN INTEGRATED CIRCUIT INCLUDING A SEMICOND...
- Publication number 20110278598
- Publication date Nov 17, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED CONTACT DEVICES FOR NITRIDE-BASED FILMS AND MANUFACTURE THEREOF
- Publication number 20090020768
- Publication date Jan 22, 2009
- Gallium Enterprise Pty Ltd., an Australian company
- Kenneth Scott Alexander Butcher
- H01 - BASIC ELECTRIC ELEMENTS

for AIII-BV integrated circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Enhanced bonding between III-V material and oxide material

Gallium nitride device for high frequency and high power applications

Parasitic capacitance reduction in GaN devices

Enhanced bonding between III-V material and oxide material

Multilevel template assisted wafer bonding

Parasitic capacitance reduction in GaN-on-silicon devices

Gallium nitride high-electron mobility transistors with deep implan...

Semiconductor structure with doped layers on fins and fabrication m...

High power compound semiconductor field effect transistor devices w...

Regrowth method for fabricating wide-bandgap transistors, and devic...

Enhanced bonding between III-V material and oxide material

High electron mobility transistor with deep charge carrier gas cont...

Regrowth method for fabricating wide-bandgap transistors, and devic...

Semiconductor component and method of manufacture

Metal-semiconductor heterodimension field effect transistors (MESHF...

Multilevel template assisted wafer bonding

Semiconductor component and method of manufacture

Semiconductor component and method

Semiconductor structure, an integrated circuit including a semicond...

Method for making selective subcollector heterojunction bipolar tra...

Laminated upper cladding structure for a light-emitting device

Method of forming substrate vias in a GaAs wafer

Transistor made of 3-5 group semiconductor materials on a silicon s...

Process for grounding flat devices and integrated circuits

Deep buried layers for semiconductor devices

Patents Applicationslast 30 patents

SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY

PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES

ENHANCED BONDING BETWEEN III-V MATERIAL AND OXIDE MATERIAL

PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES

ENHANCED BONDING BETWEEN III-V MATERIAL AND OXIDE MATERIAL

PARASITIC CAPACITANCE REDUCTION IN GaN-ON-SILICON DEVICES

ENHANCED BONDING BETWEEN III-V MATERIAL AND OXIDE MATERIAL

High Electron Mobility Transistor with Deep Charge Carrier Gas Cont...

Gallium Nitride High-Electron Mobility Transistors with Deep Implan...

HIGH POWER COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR DEVICES W...

MULTILEVEL TEMPLATE ASSISTED WAFER BONDING

METHOD AND SYSTEM FOR TEMPLATE ASSISTED WAFER BONDING USING PEDESTALS

SEMICONDUCTOR COMPONENT AND METHOD

SEMICONDUCTOR STRUCTURE, AN INTEGRATED CIRCUIT INCLUDING A SEMICOND...

BURIED CONTACT DEVICES FOR NITRIDE-BASED FILMS AND MANUFACTURE THEREOF