for increasing or controlling the breakdown voltage of reverse biased devices

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H01L29/0611

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0611for increasing or controlling the breakdown voltage of reverse biased devices

Industries

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Patents Grantslast 30 patents

Information Patent Grant
High voltage MOSFET device with improved breakdown voltage
- Patent number 12,170,329
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power device and method for manufacturing the same
- Patent number 12,021,128
- Issue date Jun 25, 2024
- Hangzhou Silan Microelectronics Co., Ltd.
- Shaohua Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method for semiconductor device
- Patent number 12,009,268
- Issue date Jun 11, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and manufacturing method thereof
- Patent number 12,002,847
- Issue date Jun 4, 2024
- Invinci Semiconductor Corporation
- Li-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS having multiple field plates and associated manufacturing method
- Patent number 12,002,848
- Issue date Jun 4, 2024
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fully oxidized gate oxide layer and met...
- Patent number 11,990,545
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,984,482
- Issue date May 14, 2024
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor device and method for manufacturing the same
- Patent number 11,949,010
- Issue date Apr 2, 2024
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Budong You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and method for preparing same
- Patent number 11,923,453
- Issue date Mar 5, 2024
- CSMC Technologies Fab2 Co., Ltd.
- Huajun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode
- Patent number 11,908,955
- Issue date Feb 20, 2024
- TDK Corporation
- Jun Arima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial discharge suppression in high voltage solid-state devices
- Patent number 11,888,023
- Issue date Jan 30, 2024
- Lawrence Livermore National Security, LLC
- Stephen Sampayan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask-free process for improving drain to gate breakdown voltage in...
- Patent number 11,799,006
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of high-voltage semiconductor device with incr...
- Patent number 11,769,794
- Issue date Sep 26, 2023
- Yangtze Memory Technologies Co., Ltd.
- Chao Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit device, light source device, and electronic apparatus
- Patent number 11,749,684
- Issue date Sep 5, 2023
- Seiko Epson Corporation
- Kei Ishimaru
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Semiconductor device and fabrication method for semiconductor device
- Patent number 11,742,249
- Issue date Aug 29, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,715,773
- Issue date Aug 1, 2023
- Kabushiki Kaisha Toshiba
- Tsuyoshi Kachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistors for high voltage applications
- Patent number 11,658,208
- Issue date May 23, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT and manufacturing method therefor
- Patent number 11,652,164
- Issue date May 16, 2023
- GTA Semiconductor Co., Ltd.
- Xueliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System on chip
- Patent number 11,631,662
- Issue date Apr 18, 2023
- SHENZHEN WINSEMI MICROELECTRONICS CO., LTD.
- Lijun Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Schottky barrier diode
- Patent number 11,626,522
- Issue date Apr 11, 2023
- TDK Corporation
- Jun Arima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and operation circuit
- Patent number 11,574,997
- Issue date Feb 7, 2023
- Vanguard International Semiconductor Corporation
- Shao-Chang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial discharge suppression in high voltage solid-state devices
- Patent number 11,557,646
- Issue date Jan 17, 2023
- Lawrence Livermore National Security, LLC
- Stephen Sampayan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fully oxidized gate oxide layer and met...
- Patent number 11,508,843
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,489,041
- Issue date Nov 1, 2022
- Research & Business Foundation Sungkyunkwan University
- Jin Hong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a three-dimensional field plate
- Patent number 11,476,357
- Issue date Oct 18, 2022
- Ecole Polytechnique Federale de Lausanne (EPFL)
- Elison de Nazareth Matioli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with channel regions extending along at least one of the...
- Patent number 11,462,611
- Issue date Oct 4, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method for semiconductor device
- Patent number 11,450,734
- Issue date Sep 20, 2022
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a protected element
- Patent number 11,444,154
- Issue date Sep 13, 2022
- Kabushiki Kaisha Tokai-Rika-Denki-Seisakusho
- Yoshikazu Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TVS device and manufacturing method therefor
- Patent number 11,430,780
- Issue date Aug 30, 2022
- CSMC Technologies Fab2 Co., Ltd.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing semiconductor device...
- Patent number 11,424,327
- Issue date Aug 23, 2022
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048684
- Publication date Feb 6, 2025
- Fuji Electric Co., Ltd.
- Shuntaro YAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015170
- Publication date Jan 9, 2025
- Fuji Electric Co., Ltd.
- Yuta SHINODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240429315
- Publication date Dec 26, 2024
- Vanguard International Semiconductor Corporation
- Wen-Shan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405110
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Takayuki OSAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MODULE
- Publication number 20240405016
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Shinya UMEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION
- Publication number 20240387721
- Publication date Nov 21, 2024
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Fabricating Method Thereof
- Publication number 20240379660
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENHANCED AVALANCHE RUGGEDNESS
- Publication number 20240371926
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- LIANG-YU SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOUBLE-GATE STRUCTURE AND METHOD OF MAN...
- Publication number 20240372009
- Publication date Nov 7, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MOSFET WITH HIGH SHORT CIRCUIT WITHSTAND TIME CAPABILITY
- Publication number 20240339494
- Publication date Oct 10, 2024
- MaxPower Semiconductor, Inc.
- Mohamed Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290845
- Publication date Aug 29, 2024
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240290858
- Publication date Aug 29, 2024
- HANGZHOU SILAN MICROELECTRONICS CO., LTD.
- Shaohua Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS HAVING MULTIPLE FIELD PLATES AND ASSOCIATED MANUFACTURING METHOD
- Publication number 20240282808
- Publication date Aug 22, 2024
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING T...
- Publication number 20240234566
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- LING MEI LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF
- Publication number 20240194779
- Publication date Jun 13, 2024
- Infineon Technologies Austria AG
- Christian Zmölnig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS OF OPERATING A PNP BI-DIRECTIONAL DOUBLE-BASE B...
- Publication number 20240154029
- Publication date May 9, 2024
- IDEAL POWER INC.
- R. Daniel BRDAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
- Publication number 20240063257
- Publication date Feb 22, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng XIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240021721
- Publication date Jan 18, 2024
- DENSO CORPORATION
- Junpei TAKAISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20230402540
- Publication date Dec 14, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Lijie ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASK-FREE PROCESS FOR IMPROVING DRAIN TO GATE BREAKDOWN VOLTAGE IN...
- Publication number 20230378293
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20230369137
- Publication date Nov 16, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20230335597
- Publication date Oct 19, 2023
- Huawei Technologies Co., Ltd
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE MOSFET DEVICE WITH IMPROVED BREAKDOWN VOLTAGE
- Publication number 20230290880
- Publication date Sep 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anupam DUTTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL DISCHARGE SUPPRESSION IN HIGH VOLTAGE SOLID-STATE DEVICES
- Publication number 20230145347
- Publication date May 11, 2023
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Stephen Sampayan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20230113129
- Publication date Apr 13, 2023
- TDK Corporation
- Jun ARIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230090527
- Publication date Mar 23, 2023
- Kabushiki Kaisha Toshiba
- Takuo KIKUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20230040096
- Publication date Feb 9, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FULLY OXIDIZED GATE OXIDE LAYER AND MET...
- Publication number 20230040514
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsu-Hsiu PERNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND OPERATION CIRCUIT
- Publication number 20230034420
- Publication date Feb 2, 2023
- Vanguard International Semiconductor Corporation
- Shao-Chang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE BLOCKING GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20230036698
- Publication date Feb 2, 2023
- University of Electronic Science and Technology of China
- Ruize SUN
- H01 - BASIC ELECTRIC ELEMENTS

for increasing or controlling the breakdown voltage of reverse biased devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High voltage MOSFET device with improved breakdown voltage

Bidirectional power device and method for manufacturing the same

Semiconductor device and fabrication method for semiconductor device

Power semiconductor device and manufacturing method thereof

LDMOS having multiple field plates and associated manufacturing method

Semiconductor device having fully oxidized gate oxide layer and met...

Semiconductor device

Metal oxide semiconductor device and method for manufacturing the same

LDMOS device and method for preparing same

Schottky barrier diode

Partial discharge suppression in high voltage solid-state devices

Mask-free process for improving drain to gate breakdown voltage in...

Manufacturing method of high-voltage semiconductor device with incr...

Circuit device, light source device, and electronic apparatus

Semiconductor device and fabrication method for semiconductor device

Semiconductor device

Thin film transistors for high voltage applications

IGBT and manufacturing method therefor

System on chip

Schottky barrier diode

Semiconductor structure and operation circuit

Partial discharge suppression in high voltage solid-state devices

Semiconductor device having fully oxidized gate oxide layer and met...

Semiconductor device and manufacturing method thereof

Semiconductor device comprising a three-dimensional field plate

SiC device with channel regions extending along at least one of the...

Semiconductor device and fabrication method for semiconductor device

Semiconductor device with a protected element

TVS device and manufacturing method therefor

Semiconductor device, method for manufacturing semiconductor device...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR MODULE

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION

Semiconductor Device and Fabricating Method Thereof

SEMICONDUCTOR DEVICE WITH ENHANCED AVALANCHE RUGGEDNESS

SEMICONDUCTOR DEVICE HAVING DOUBLE-GATE STRUCTURE AND METHOD OF MAN...

VERTICAL MOSFET WITH HIGH SHORT CIRCUIT WITHSTAND TIME CAPABILITY

SEMICONDUCTOR DEVICE

BIDIRECTIONAL POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME

LDMOS HAVING MULTIPLE FIELD PLATES AND ASSOCIATED MANUFACTURING METHOD

METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING T...

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF

METHODS AND SYSTEMS OF OPERATING A PNP BI-DIRECTIONAL DOUBLE-BASE B...

SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

MASK-FREE PROCESS FOR IMPROVING DRAIN TO GATE BREAKDOWN VOLTAGE IN...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE

GALLIUM NITRIDE POWER TRANSISTOR

HIGH VOLTAGE MOSFET DEVICE WITH IMPROVED BREAKDOWN VOLTAGE

PARTIAL DISCHARGE SUPPRESSION IN HIGH VOLTAGE SOLID-STATE DEVICES

SCHOTTKY BARRIER DIODE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING FULLY OXIDIZED GATE OXIDE LAYER AND MET...

SEMICONDUCTOR STRUCTURE AND OPERATION CIRCUIT

REVERSE BLOCKING GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR