for preventing surface leakage due to surface inversion layer

Industry

CPC
H01L29/0638

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0638for preventing surface leakage due to surface inversion layer

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,166,125
- Issue date Dec 10, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with equipotential ring electrode
- Patent number 12,159,865
- Issue date Dec 3, 2024
- Rohm Co., Ltd.
- Hiroyuki Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage edge termination structure for power semiconductor dev...
- Patent number 12,154,955
- Issue date Nov 26, 2024
- Taiwan Semiconductor Co., Ltd.
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor with shallow trench edge doping
- Patent number 12,113,079
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yueh-Chuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor structure
- Patent number 12,107,002
- Issue date Oct 1, 2024
- NANYA TECHNOLOGY CORPORATION
- Chuan-Lin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and capacitor including hydrogen-incorporated...
- Patent number 12,087,840
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Taehwan Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage edge termination structure for power semiconductor dev...
- Patent number 12,087,831
- Issue date Sep 10, 2024
- Taiwan Semiconductor Co., Ltd.
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices including gate barrier layers
- Patent number 12,051,721
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Left-ISD-LTSEE {low electrostatic field transistor (LEFT) using imp...
- Patent number 12,033,851
- Issue date Jul 9, 2024
- Mammen Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including barrier layer between active region...
- Patent number 11,996,443
- Issue date May 28, 2024
- Samsung Electronics Co., Ltd.
- Sungkeun Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,996,444
- Issue date May 28, 2024
- MagnaChip Semiconductor, Ltd.
- Guk Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked buffer in transistors
- Patent number 11,973,137
- Issue date Apr 30, 2024
- Indian Institute of Science
- Srinivasan Raghavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,973,108
- Issue date Apr 30, 2024
- Nissan Motor Co., Ltd.
- Wei Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power conversion device
- Patent number 11,942,512
- Issue date Mar 26, 2024
- Hitachi Power Semiconductor Device, Ltd.
- Tomoyasu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,942,539
- Issue date Mar 26, 2024
- Kabushiki Kaisha Toshiba
- Shotaro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,935,780
- Issue date Mar 19, 2024
- NANYA TECHNOLOGY CORPORATION
- Chuan-Lin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI device structure and preparation method thereof
- Patent number 11,855,212
- Issue date Dec 26, 2023
- Shanghai Huali Integrated Circuit Corporation
- Zhonghua Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,854,926
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,848,354
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side dopant activation in field stop IGBT
- Patent number 11,824,090
- Issue date Nov 21, 2023
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFet isolation structure and method for fabricating the same
- Patent number 11,804,484
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with deeply depleted channel and manufacturing...
- Patent number 11,798,983
- Issue date Oct 24, 2023
- United Semiconductor Japan Co., Ltd.
- Fumitaka Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor gate-all-around device having an anti-punch-through (...
- Patent number 11,784,226
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall interconnect metallization structures for integrated circu...
- Patent number 11,776,898
- Issue date Oct 3, 2023
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,749,716
- Issue date Sep 5, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Select gate gate-induced-drain-leakage enhancement
- Patent number 11,742,380
- Issue date Aug 29, 2023
- Micron Technology, Inc.
- Albert Fayrushin
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical power semiconductor device including a field stop region h...
- Patent number 11,742,384
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor with shallow trench edge doping
- Patent number 11,735,609
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yueh-Chuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,995
- Issue date Jun 13, 2023
- Kabushiki Kaisha Toshiba
- Masato Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat sink layout designs for advanced FinFET integrated circuits
- Patent number 11,677,007
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Amit Kundu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20240420992
- Publication date Dec 19, 2024
- NANYA TECHNOLOGY CORPORATION
- Chuan-Lin HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Gate-All-Around Device
- Publication number 20240387638
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
- Publication number 20240363766
- Publication date Oct 31, 2024
- HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- Takasumi OOYANAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices Including Gate Barrier Layers
- Publication number 20240355880
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20240339502
- Publication date Oct 10, 2024
- Fuji Electric Co., Ltd.
- Tomohiro MORIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240313108
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Katsuhisa TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BARRIER LAYER BETWEEN ACTIVE REGION...
- Publication number 20240297215
- Publication date Sep 5, 2024
- Samsung Electronics Co., Ltd.
- Sungkeun Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT
- Publication number 20240258370
- Publication date Aug 1, 2024
- Industrial Technology Research Institute
- Hsueh-Hsing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240162287
- Publication date May 16, 2024
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240153989
- Publication date May 9, 2024
- Mitsubishi Electric Corporation
- Koichi NISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240128320
- Publication date Apr 18, 2024
- Fuji Electric Co., Ltd.
- Shuntaro YAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240088214
- Publication date Mar 14, 2024
- Fuji Electric Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240055475
- Publication date Feb 15, 2024
- NISSAN MOTOR CO., LTD.
- Wei NI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240055483
- Publication date Feb 15, 2024
- Fuji Electric Co., Ltd.
- Yuki KARAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD STOP IGBT WITH GROWN INJECTION REGION
- Publication number 20240055484
- Publication date Feb 15, 2024
- IPOWER SEMICONDUCTOR
- HAMZA YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20240047265
- Publication date Feb 8, 2024
- NANYA TECHNOLOGY CORPORATION
- Chuan-Lin HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, DEVICE AND METHOD OF M...
- Publication number 20240021671
- Publication date Jan 18, 2024
- Dynax Semiconductor, Inc.
- Hui ZHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH DEEPLY DEPLETED...
- Publication number 20240014259
- Publication date Jan 11, 2024
- United Semiconductor Japan Co., Ltd.
- Fumitaka Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230420453
- Publication date Dec 28, 2023
- DENSO CORPORATION
- Koichi MURAKAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Gate-All-Around Device
- Publication number 20230387212
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230361172
- Publication date Nov 9, 2023
- Nexperia Technology (Shanghai) Ltd.
- Chunlin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR WITH SHALLOW TRENCH EDGE DOPING
- Publication number 20230361137
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yueh-Chuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Semiconductor Device and Manufacturing Method
- Publication number 20230352531
- Publication date Nov 2, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TRENCH TERMINATIONS AND...
- Publication number 20230343867
- Publication date Oct 26, 2023
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TRENCH TERMINATIONS AND...
- Publication number 20230343866
- Publication date Oct 26, 2023
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFETS WITH IMPROVED PERFORMANCE STRUCTURES
- Publication number 20230327013
- Publication date Oct 12, 2023
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT SINK LAYOUT DESIGNS FOR ADVANCED FINFET INTEGRATED CIRCUITS
- Publication number 20230317806
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Amit KUNDU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUC...
- Publication number 20230307528
- Publication date Sep 28, 2023
- PANJIT INTERNATIONAL INC.
- SEUNGCHUL LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230307446
- Publication date Sep 28, 2023
- Fuji Electric Co., Ltd.
- Yuichi HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20230290828
- Publication date Sep 14, 2023
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS

for preventing surface leakage due to surface inversion layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure and method for forming the same

Semiconductor device with equipotential ring electrode

High voltage edge termination structure for power semiconductor dev...

Image sensor with shallow trench edge doping

Manufacturing method of semiconductor structure

Semiconductor device and capacitor including hydrogen-incorporated...

High voltage edge termination structure for power semiconductor dev...

Methods of forming semiconductor devices including gate barrier layers

Left-ISD-LTSEE {low electrostatic field transistor (LEFT) using imp...

Semiconductor device including barrier layer between active region...

Semiconductor device and manufacturing method of semiconductor device

Stacked buffer in transistors

Semiconductor device and manufacturing method thereof

Semiconductor device and power conversion device

Semiconductor device

Semiconductor structure and manufacturing method thereof

FDSOI device structure and preparation method thereof

Semiconductor device with a passivation layer and method for produc...

Diode structure of a power semiconductor device

Back side dopant activation in field stop IGBT

FinFet isolation structure and method for fabricating the same

Semiconductor device with deeply depleted channel and manufacturing...

Semiconductor gate-all-around device having an anti-punch-through (...

Sidewall interconnect metallization structures for integrated circu...

Semiconductor device incorporating epitaxial layer field stop zone

Select gate gate-induced-drain-leakage enhancement

Vertical power semiconductor device including a field stop region h...

Image sensor with shallow trench edge doping

Semiconductor device

Heat sink layout designs for advanced FinFET integrated circuits

Patents Applicationslast 30 patents

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

Semiconductor Gate-All-Around Device

SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

Methods of Forming Semiconductor Devices Including Gate Barrier Layers

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING BARRIER LAYER BETWEEN ACTIVE REGION...

SEMICONDUCTOR COMPONENT

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

FIELD STOP IGBT WITH GROWN INJECTION REGION

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, DEVICE AND METHOD OF M...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH DEEPLY DEPLETED...

SEMICONDUCTOR DEVICE

Semiconductor Gate-All-Around Device

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

IMAGE SENSOR WITH SHALLOW TRENCH EDGE DOPING

Vertical Power Semiconductor Device and Manufacturing Method

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TRENCH TERMINATIONS AND...

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TRENCH TERMINATIONS AND...

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED PERFORMANCE STRUCTURES

HEAT SINK LAYOUT DESIGNS FOR ADVANCED FINFET INTEGRATED CIRCUITS

MANUFACTURING METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUC...

SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR