Formation and after-treatment of dielectrics

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H01L2221/1005

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00

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H01L2221/1005Formation and after-treatment of dielectrics

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Patents Grantslast 30 patents

Information Patent Grant
Method for etch-based planarization of a substrate
- Patent number 9,991,133
- Issue date Jun 5, 2018
- Tokyo Electron Limited
- Cheryl Pereira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of shallow trench isolation and through-substrate vias...
- Patent number 9,613,847
- Issue date Apr 4, 2017
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Mark A. Bachman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of shallow trench isolation and through-substrate vias...
- Patent number 8,742,535
- Issue date Jun 3, 2014
- LSI Corporation
- Mark A. Bachman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR ETCH-BASED PLANARIZATION OF A SUBSTRATE
- Publication number 20180047584
- Publication date Feb 15, 2018
- TOKYO ELECTRON LIMITED
- Cheryl Pereira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF SHALLOW TRENCH ISOLATION AND THROUGH-SUBSTRATE VIAS...
- Publication number 20140220760
- Publication date Aug 7, 2014
- LSI Corporation
- Mark A. Bachman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF SHALLOW TRENCH ISOLATION AND THROUGH-SUBSTRATE VIAS...
- Publication number 20120153430
- Publication date Jun 21, 2012
- LSI Corporation
- Mark A. Bachman
- H01 - BASIC ELECTRIC ELEMENTS