Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00

H01L2221/10Applying interconnections to be used for carrying current between separate components within a device H01L2221/1005Formation and after-treatment of dielectrics H01L2221/101Forming openings in dielectrics H01L2221/1015for dual damascene structures H01L2221/1021Pre-forming the dual damascene structure in a resist layer H01L2221/1026the via being formed by burying a sacrificial pillar in the dielectric and removing the pillar H01L2221/1031Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric H01L2221/1036Dual damascene with different via-level and trench-level dielectrics H01L2221/1042the dielectric comprising air gaps H01L2221/1047the air gaps being formed by pores in the dielectric H01L2221/1052Formation of thin functional dielectric layers H01L2221/1057in via holes or trenches H01L2221/1063Sacrificial or temporary thin dielectric films in openings in a dielectric H01L2221/1068Formation and after-treatment of conductors H01L2221/1073Barrier, adhesion or liner layers H01L2221/1078Multiple stacked thin films not being formed in openings in dielectrics H01L2221/1084Layers specifically deposited to enhance or enable the nucleation of further layers H01L2221/1089Stacks of seed layers H01L2221/1094Conducting structures comprising nanotubes or nanowires H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components Apparatus not specifically provided for elsewhere H01L2221/683for supporting or gripping H01L2221/68304using temporarily an auxiliary support H01L2221/68309Auxiliary support including alignment aids H01L2221/68313Auxiliary support including a cavity for storing a finished device H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support H01L2221/68322Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support H01L2221/68327used during dicing or grinding H01L2221/68331of passive members H01L2221/68336involving stretching of the auxiliary support post dicing H01L2221/6834used to protect an active side of a device or wafer H01L2221/68345used as a support during the manufacture of self supporting substrates H01L2221/6835used as a support during build up manufacturing of active devices H01L2221/68354used to support diced chips prior to mounting H01L2221/68359used as a support during manufacture of interconnect decals or build up layers H01L2221/68363used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate H01L2221/68368used in a transfer process involving at least two transfer steps H01L2221/68372used to support a device or wafer when forming electrical connections thereto H01L2221/68377with parts of the auxiliary support remaining in the finished device H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer H01L2221/68386Separation by peeling H01L2221/6839using peeling wedge or knife or bar H01L2221/68395using peeling wheel