formation by combined oxidation and nitridation performed simultaneously

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H01L21/02249

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02249formation by combined oxidation and nitridation performed simultaneously

Industries

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Patents Grantslast 30 patents

Information Patent Grant
In-situ steam generated oxynitride
- Patent number 12,116,676
- Issue date Oct 15, 2024
- X-FAB France SAS
- Sotirios Athanasiou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vertical memory devices and methods of manufacturing the same
- Patent number 12,048,158
- Issue date Jul 23, 2024
- Samsung Electronics Co., Ltd.
- Bio Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor substrate having a stressed s...
- Patent number 11,810,789
- Issue date Nov 7, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of topology-selective film formation of silicon oxide
- Patent number 11,637,011
- Issue date Apr 25, 2023
- ASM IP Holding B.V.
- Atsuki Fukazawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrate processing apparatus and substrate processing method
- Patent number 11,527,404
- Issue date Dec 13, 2022
- Tokyo Electron Limited
- Tetsuya Saitou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices and methods of manufacturing the same
- Patent number 11,329,063
- Issue date May 10, 2022
- Samsung Electronics Co., Ltd.
- Bio Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 11,239,337
- Issue date Feb 1, 2022
- Renesas Electronics Corporation
- Tetsuya Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for deposition of titanium oxynitride for use in integrated...
- Patent number 11,195,712
- Issue date Dec 7, 2021
- ASM IP Holding B.V.
- Viljami J. Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for gapfill in substrates
- Patent number 11,101,128
- Issue date Aug 24, 2021
- Applied Materials, Inc.
- Yixiong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure and method of making the same
- Patent number 11,038,010
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Jian-Shiou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 10,886,379
- Issue date Jan 5, 2021
- Renesas Electronics Corporation
- Tetsuya Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for deposition of titanium oxynitride for use in integrated...
- Patent number 10,546,744
- Issue date Jan 28, 2020
- ASM IP Holding B.V.
- Viljami J. Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxially coated semiconductor wafer, and method for producing an...
- Patent number 10,483,128
- Issue date Nov 19, 2019
- Siltronic AG
- Timo Mueller
- B08 - CLEANING
Information Patent Grant
Process for deposition of titanium oxynitride for use in integrated...
- Patent number 10,460,928
- Issue date Oct 29, 2019
- ASM IP Holding B.V.
- Viljami J. Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma processing apparatus and method of manufacturing semiconduct...
- Patent number 10,403,478
- Issue date Sep 3, 2019
- Kokusai Electric Corporation
- Hidehiro Yanai
- B08 - CLEANING
Information Patent Grant
Manufacture method of gate insulating film for silicon carbide semi...
- Patent number 10,068,762
- Issue date Sep 4, 2018
- Fuji Electric Co., Ltd.
- Takuro Inamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for deposition of titanium oxynitride for use in integrated...
- Patent number 10,002,755
- Issue date Jun 19, 2018
- ASM IP Holding B.V.
- Viljami J. Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Non-lithographic line pattern formation
- Patent number 9,997,367
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming thin film and method of manufacturing semiconduct...
- Patent number 9,929,252
- Issue date Mar 27, 2018
- Samsung Electronics Co., Ltd.
- Sun-gyu Choi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,831,084
- Issue date Nov 28, 2017
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for semiconductor passivation by nitridation
- Patent number 9,711,350
- Issue date Jul 18, 2017
- ASM IP Holding B.V.
- Qi Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for deposition of titanium oxynitride for use in integrated...
- Patent number 9,523,148
- Issue date Dec 20, 2016
- ASM IP Holdings B.V.
- Viljami J. Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Non-lithographic line pattern formation
- Patent number 9,396,957
- Issue date Jul 19, 2016
- International Business Machines Corporation
- Chiahsun Tseng
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,373,501
- Issue date Jun 21, 2016
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating GaN high voltage HFET with passivation plus g...
- Patent number 9,343,541
- Issue date May 17, 2016
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-containing oxide film and method of forming the same
- Patent number 9,330,901
- Issue date May 3, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- An-Chun Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-lithographic hole pattern formation
- Patent number 9,330,962
- Issue date May 3, 2016
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-plasma nitridation process for a gate dielectric
- Patent number 9,252,232
- Issue date Feb 2, 2016
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-plasma nitridation process for a gate dielectric
- Patent number 9,196,700
- Issue date Nov 24, 2015
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device dielectric interface layer
- Patent number 9,177,784
- Issue date Nov 3, 2015
- ASM IP Holdings B.V.
- Petri Raisanen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IN-SITU STEAM GENERATED OXYNITRIDE
- Publication number 20240417842
- Publication date Dec 19, 2024
- X-FAB France SAS
- Sotirios ATHANASIOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20240321774
- Publication date Sep 26, 2024
- Samsung Electronics Co., Ltd.
- Kitae Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIN GAP FILL VIA NUCLEATION INHIBITION
- Publication number 20240145235
- Publication date May 2, 2024
- Applied Materials, Inc.
- Zeqing SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20220238555
- Publication date Jul 28, 2022
- SAMSUNG ELECTRONICS CO., LTD.
- Bio KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU STEAM GENERATED OXYNITRIDE
- Publication number 20210317559
- Publication date Oct 14, 2021
- X-FAB France SAS
- Sotirios ATHANASIOU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CAPACITOR STRUCTURE AND METHOD OF MAKING THE SAME
- Publication number 20210305357
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Jian-Shiou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR GAPFILL IN SUBSTRATES
- Publication number 20210287900
- Publication date Sep 16, 2021
- Applied Materials, Inc.
- Yixiong YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF TOPOLOGY-SELECTIVE FILM FORMATION OF SILICON OXIDE
- Publication number 20210118667
- Publication date Apr 22, 2021
- ASM IP HOLDING B.V.
- Atsuki Fukazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20210091203
- Publication date Mar 25, 2021
- Renesas Electronics Corporation
- Tetsuya YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20210036012
- Publication date Feb 4, 2021
- Samsung Electronics Co., Ltd.
- Bio KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
- Publication number 20200294799
- Publication date Sep 17, 2020
- TOKYO ELECTRON LIMITED
- Tetsuya SAITOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR DEPOSITION OF TITANIUM OXYNITRIDE FOR USE IN INTEGRATED...
- Publication number 20200251330
- Publication date Aug 6, 2020
- ASM IP HOLDING B.V.
- Viljami J. Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR SUBSTRATE HAVING A STRESSED S...
- Publication number 20200194273
- Publication date Jun 18, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR DEPOSITION OF TITANIUM OXYNITRIDE FOR USE IN INTEGRATED...
- Publication number 20190172705
- Publication date Jun 6, 2019
- ASM IP HOLDING B.V.
- Viljami J. Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PROCESS FOR DEPOSITION OF TITANIUM OXYNITRIDE FOR USE IN INTEGRATED...
- Publication number 20190043711
- Publication date Feb 7, 2019
- ASM IP HOLDING B.V.
- Viljami J. Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Fabrication of Trench-Gated Wide-Bandgap Devices
- Publication number 20180358449
- Publication date Dec 13, 2018
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY COATED SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING AN...
- Publication number 20180047586
- Publication date Feb 15, 2018
- Siltronic AG
- Timo MUELLER
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR DEPOSITION OF TITANIUM OXYNITRIDE FOR USE IN INTEGRATED...
- Publication number 20170140926
- Publication date May 18, 2017
- ASM IP HOLDING B.V.
- Viljami J. Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ACTIVATED THIN SILICON LAYERS
- Publication number 20170092725
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR SEMICONDUCTOR PASSIVATION BY NITRIDATION
- Publication number 20160358772
- Publication date Dec 8, 2016
- ASM IP HOLDING B.V.
- Qi Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-LITHOGRAPHIC LINE PATTERN FORMATION
- Publication number 20160329214
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...
- Publication number 20160027640
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCT...
- Publication number 20150371832
- Publication date Dec 24, 2015
- Hitachi Kokusai Electric Inc.
- Hidehiro YANAI
- B08 - CLEANING
Information Patent Application
MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC
- Publication number 20150179459
- Publication date Jun 25, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-LITHOGRAPHIC LINE PATTERN FORMATION
- Publication number 20140349088
- Publication date Nov 27, 2014
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-LITHOGRAPHIC HOLE PATTERN FORMATION
- Publication number 20140346640
- Publication date Nov 27, 2014
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...
- Publication number 20140308821
- Publication date Oct 16, 2014
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR GATE STRUCTURE AND SEMICONDUCTOR G...
- Publication number 20140291727
- Publication date Oct 2, 2014
- TSINGHUA UNIVERSITY
- Mei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC
- Publication number 20140252503
- Publication date Sep 11, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITROGEN-CONTAINING OXIDE FILM AND METHOD OF FORMING THE SAME
- Publication number 20140246758
- Publication date Sep 4, 2014
- An-Chun Tu
- H01 - BASIC ELECTRIC ELEMENTS

formation by combined oxidation and nitridation performed simultaneously

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

In-situ steam generated oxynitride

Vertical memory devices and methods of manufacturing the same

Method of fabricating a semiconductor substrate having a stressed s...

Method of topology-selective film formation of silicon oxide

Substrate processing apparatus and substrate processing method

Vertical memory devices and methods of manufacturing the same

Semiconductor device and method of manufacturing same

Process for deposition of titanium oxynitride for use in integrated...

Methods for gapfill in substrates

Capacitor structure and method of making the same

Semiconductor device and method of manufacturing same

Process for deposition of titanium oxynitride for use in integrated...

Epitaxially coated semiconductor wafer, and method for producing an...

Process for deposition of titanium oxynitride for use in integrated...

Plasma processing apparatus and method of manufacturing semiconduct...

Manufacture method of gate insulating film for silicon carbide semi...

Process for deposition of titanium oxynitride for use in integrated...

Non-lithographic line pattern formation

Method of forming thin film and method of manufacturing semiconduct...

Hydroxyl group termination for nucleation of a dielectric metallic...

Methods for semiconductor passivation by nitridation

Process for deposition of titanium oxynitride for use in integrated...

Non-lithographic line pattern formation

Hydroxyl group termination for nucleation of a dielectric metallic...

Method of fabricating GaN high voltage HFET with passivation plus g...

Nitrogen-containing oxide film and method of forming the same

Non-lithographic hole pattern formation

Multi-plasma nitridation process for a gate dielectric

Multi-plasma nitridation process for a gate dielectric

Semiconductor device dielectric interface layer

Patents Applicationslast 30 patents

IN-SITU STEAM GENERATED OXYNITRIDE

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...

SIN GAP FILL VIA NUCLEATION INHIBITION

VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

IN-SITU STEAM GENERATED OXYNITRIDE

CAPACITOR STRUCTURE AND METHOD OF MAKING THE SAME

METHODS FOR GAPFILL IN SUBSTRATES

METHOD OF TOPOLOGY-SELECTIVE FILM FORMATION OF SILICON OXIDE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

PROCESS FOR DEPOSITION OF TITANIUM OXYNITRIDE FOR USE IN INTEGRATED...

METHOD OF FABRICATING A SEMICONDUCTOR SUBSTRATE HAVING A STRESSED S...

PROCESS FOR DEPOSITION OF TITANIUM OXYNITRIDE FOR USE IN INTEGRATED...

PROCESS FOR DEPOSITION OF TITANIUM OXYNITRIDE FOR USE IN INTEGRATED...

Fabrication of Trench-Gated Wide-Bandgap Devices

EPITAXIALLY COATED SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING AN...

PROCESS FOR DEPOSITION OF TITANIUM OXYNITRIDE FOR USE IN INTEGRATED...

ACTIVATED THIN SILICON LAYERS

METHODS FOR SEMICONDUCTOR PASSIVATION BY NITRIDATION

NON-LITHOGRAPHIC LINE PATTERN FORMATION

HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...

PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCT...

MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC

NON-LITHOGRAPHIC LINE PATTERN FORMATION

NON-LITHOGRAPHIC HOLE PATTERN FORMATION

HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...

METHOD FOR FORMING SEMICONDUCTOR GATE STRUCTURE AND SEMICONDUCTOR G...

MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC

NITROGEN-CONTAINING OXIDE FILM AND METHOD OF FORMING THE SAME