Formation of the switching material

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H01L45/1608

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1608Formation of the switching material

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Patents Grantslast 30 patents

Information Patent Grant
Magnesium ion based synaptic device
- Patent number 11,690,304
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Douglas M. Bishop
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing variable resistance memory device
- Patent number 11,683,940
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Dongkyu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Step height mitigation in resistive random access memory structures
- Patent number 11,678,592
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising threshold switching materials
- Patent number 11,672,191
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic synaptic device and method for manufacturing same
- Patent number 11,672,190
- Issue date Jun 6, 2023
- Industry-University Cooperation Foundation Hanyang University
- Tae Whan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory structure with efficient heating system
- Patent number 11,659,780
- Issue date May 23, 2023
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector device and method of making the same
- Patent number 11,659,781
- Issue date May 23, 2023
- Huazhong University of Science & Technology
- Xiangshui Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM device structure and manufacturing method
- Patent number 11,653,581
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile tunable capacitive processing unit
- Patent number 11,647,684
- Issue date May 9, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,641,786
- Issue date May 2, 2023
- Commissariat a l'Energie Atomique et aux Energies
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming resistive memory cell having an ovonic threshold...
- Patent number 11,637,144
- Issue date Apr 25, 2023
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom electrode structure in memory device
- Patent number 11,631,810
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Yang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-memory resistive random access memory XOR logic using compliment...
- Patent number 11,631,809
- Issue date Apr 18, 2023
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual oxide analog switch for neuromorphic switching
- Patent number 11,616,195
- Issue date Mar 28, 2023
- Applied Materials, Inc.
- Deepak Kamalanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell, method of forming the same, and semiconductor die
- Patent number 11,605,779
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual resistive random-access memory with two transistors
- Patent number 11,605,673
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,600,664
- Issue date Mar 7, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure improving reliability of top electrode contact for resist...
- Patent number 11,594,679
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Tai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuromorphic device with oxygen scavenging gate
- Patent number 11,586,899
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Teodor Krassimirov Todorov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three dimensional memory array
- Patent number 11,587,979
- Issue date Feb 21, 2023
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change switch with multi face heater configuration
- Patent number 11,563,174
- Issue date Jan 24, 2023
- Infineon Technologies AG
- Dominik Heiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned cross-point phase change memory-switch array
- Patent number 11,563,055
- Issue date Jan 24, 2023
- Micron Technology, Inc.
- Jong Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including phase change material layers...
- Patent number 11,563,056
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,557,723
- Issue date Jan 17, 2023
- Samsung Electronics Co., Ltd.
- Jungho Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,552,129
- Issue date Jan 10, 2023
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with graded memory stack resistances
- Patent number 11,538,860
- Issue date Dec 27, 2022
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,527,714
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE
- Publication number 20240188455
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
- Publication number 20240114807
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
- Publication number 20240112731
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...
- Publication number 20240099163
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER
- Publication number 20240090352
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS
- Publication number 20240081159
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER OVONIC THRESHOLD SWITCH (OTS) FOR SWITCHING DEVICES AND...
- Publication number 20240015987
- Publication date Jan 11, 2024
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240008375
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230413691
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATION METHOD THE...
- Publication number 20230413698
- Publication date Dec 21, 2023
- UNITED MICROELECTRONICS CORP.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...
- Publication number 20230403956
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin I WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING T...
- Publication number 20230389449
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230377644
- Publication date Nov 23, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiaoguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230380192
- Publication date Nov 23, 2023
- SK HYNIX INC.
- Jong Min YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT ARCHITECTURE FOR PCRAM
- Publication number 20230380194
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SELECTOR
- Publication number 20230371279
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODES OF SEMICONDUCTOR MEMORY DEVICES HAVING CORNERS OF ACUTE...
- Publication number 20230320240
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE TERMINAL MEMORY CELLS AND METHOD OF MAKING THE SAME
- Publication number 20230320104
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- JIA RUI THONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPARSE PIERS FOR THREE-DIMENSIONAL MEMORY ARRAYS
- Publication number 20230309426
- Publication date Sep 28, 2023
- Micron Technology, Inc.
- Stephen W. Russell
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS
- Publication number 20230307025
- Publication date Sep 28, 2023
- Micron Technology, Inc.
- Stephen W. Russell
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE INTERPOSER USING RRAM PLATFORM
- Publication number 20230301214
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Lup San LEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA DEVICE STRUCTURE
- Publication number 20230292635
- Publication date Sep 14, 2023
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY RANDOM NUMBER GENERATOR
- Publication number 20230284462
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT
- Publication number 20230284543
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH DOUBLE ACTIVE VOLUME
- Publication number 20230284541
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Timothy Mathew Philip
- G11 - INFORMATION STORAGE
Information Patent Application
IN-SITU FORMATION OF A SPACER LAYER FOR PROTECTING SIDEWALLS OF A P...
- Publication number 20230263079
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230240156
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Der CHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE MATERIAL PHASE CHANGE MEMORY CELL
- Publication number 20230210026
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT
- Publication number 20230200265
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY AND ACCESS DEVICES
- Publication number 20230200269
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS

Formation of the switching material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnesium ion based synaptic device

Method of manufacturing variable resistance memory device

Step height mitigation in resistive random access memory structures

Semiconductor devices comprising threshold switching materials

Electronic synaptic device and method for manufacturing same

Phase change memory structure with efficient heating system

Selector device and method of making the same

RRAM device structure and manufacturing method

Non-volatile memory structure with positioned doping

Oxide-based resistive memory having a plasma-exposed bottom electrode

Nonvolatile tunable capacitive processing unit

Memory device

Method of forming resistive memory cell having an ovonic threshold...

Bottom electrode structure in memory device

In-memory resistive random access memory XOR logic using compliment...

Stackable symmetrical operation memory bit cell structure with bidi...

Dual oxide analog switch for neuromorphic switching

Memory cell, method of forming the same, and semiconductor die

Dual resistive random-access memory with two transistors

Memory devices and methods of forming memory devices

Structure improving reliability of top electrode contact for resist...

Neuromorphic device with oxygen scavenging gate

Three dimensional memory array

Phase change switch with multi face heater configuration

Self-aligned cross-point phase change memory-switch array

Semiconductor memory device including phase change material layers...

Semiconductor device and method of manufacturing the same

Semiconductor memory device having variable resistance elements pro...

Memory array with graded memory stack resistances

Resistive random access memory device

Patents Applicationslast 30 patents

PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT

Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...

RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER

PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS

MULTI-LAYER OVONIC THRESHOLD SWITCH (OTS) FOR SWITCHING DEVICES AND...

MEMORY DEVICE AND FABRICATION METHOD THEREOF

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATION METHOD THE...

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...

ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING T...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

CROSS-POINT ARCHITECTURE FOR PCRAM

MEMORY SELECTOR

ELECTRODES OF SEMICONDUCTOR MEMORY DEVICES HAVING CORNERS OF ACUTE...

THREE TERMINAL MEMORY CELLS AND METHOD OF MAKING THE SAME

SPARSE PIERS FOR THREE-DIMENSIONAL MEMORY ARRAYS

WORD LINE STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS

PROGRAMMABLE INTERPOSER USING RRAM PLATFORM

RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA DEVICE STRUCTURE

RESISTIVE RANDOM-ACCESS MEMORY RANDOM NUMBER GENERATOR

PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT

PHASE CHANGE MEMORY CELL WITH DOUBLE ACTIVE VOLUME

IN-SITU FORMATION OF A SPACER LAYER FOR PROTECTING SIDEWALLS OF A P...

RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

COMPOSITE MATERIAL PHASE CHANGE MEMORY CELL

SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT

STACKED CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY AND ACCESS DEVICES