Forming a passivation layer after forming the layer connector

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CPC
H01L2224/2791

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00

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H01L2224/2791Forming a passivation layer after forming the layer connector

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing perovskite solar cell module and perovskit...
- Patent number 11,114,252
- Issue date Sep 7, 2021
- CPC CORPORATION, TAIWAN
- Kuan-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer to wafer bonding process and structures
- Patent number 9,613,926
- Issue date Apr 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Patents Applicationslast 30 patents