from the substrate during epitaxy

Industry

CPC
H01L21/2205

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/2205from the substrate during epitaxy

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Arsenic diffusion profile engineering for transistors
- Patent number 12,249,626
- Issue date Mar 11, 2025
- Applied Materials, Inc.
- Patricia M. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and manufacturing method
- Patent number 11,798,937
- Issue date Oct 24, 2023
- STMicroelectronics (Crolles 2) SAS
- Edoardo Brezza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer evaluation method
- Patent number 11,769,697
- Issue date Sep 26, 2023
- SK SILTRON CO., LTD.
- Jung Kil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solar cell and solar cell module
- Patent number 11,398,574
- Issue date Jul 26, 2022
- Panasonic Holdings Corporation
- Kazunori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device source/drain region with arsenic-containing ba...
- Patent number 10,861,935
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-I Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing differently doped zones in a silicon substrate,...
- Patent number 10,825,945
- Issue date Nov 3, 2020
- Universitat Konstanz
- Sebastian Gloger
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Doping method
- Patent number 10,566,198
- Issue date Feb 18, 2020
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 10,546,750
- Issue date Jan 28, 2020
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel FinFETs having uniform fin heights
- Patent number 10,546,788
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel FinFETs having uniform fin heights
- Patent number 10,438,855
- Issue date Oct 8, 2019
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the semiconductor...
- Patent number 10,355,122
- Issue date Jul 16, 2019
- Renesas Electronics Corporation
- Yuya Abiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a doped semiconductor layer
- Patent number 10,325,996
- Issue date Jun 18, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and manufacturing method of the same
- Patent number 10,170,312
- Issue date Jan 1, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Pu-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method for the fabrication thereof
- Patent number 10,115,803
- Issue date Oct 30, 2018
- Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V.
- Rüdiger Quay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing an electron blocking layer with dop...
- Patent number 10,014,439
- Issue date Jul 3, 2018
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Joseph M. Freund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth method
- Patent number 9,518,339
- Issue date Dec 13, 2016
- Sumco Corporation
- Masayuki Ishibashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System and method for providing an electron blocking layer with dop...
- Patent number 9,425,050
- Issue date Aug 23, 2016
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Joseph M. Freund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of semiconductor memory device
- Patent number 9,305,775
- Issue date Apr 5, 2016
- SK Hynix Inc.
- Young Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite substrate and method of manufacturing the same
- Patent number 9,287,353
- Issue date Mar 15, 2016
- Kyocera Corporation
- Masanobu Kitada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and formation thereof
- Patent number 9,252,217
- Issue date Feb 2, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 9,230,810
- Issue date Jan 5, 2016
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth method
- Patent number 9,127,374
- Issue date Sep 8, 2015
- Sumco Corporation
- Masayuki Ishibashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor devices with dopant migration suppression and method...
- Patent number 9,112,057
- Issue date Aug 18, 2015
- Mie Fujitsu Semiconductor Limited
- Sameer Pradhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an aluminum p-doped surface region of a semicond...
- Patent number 9,076,919
- Issue date Jul 7, 2015
- E I du Pont de Nemours and Company
- Kenneth Warren Hang
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Access device having counter doping layer and semiconductor memory...
- Patent number 9,018,612
- Issue date Apr 28, 2015
- SK Hynix Inc.
- Young Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multijunction solar cell with two step diffusion region in substrate
- Patent number 8,957,306
- Issue date Feb 17, 2015
- Mark A. Stan
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of fabricating a multijunction solar cell
- Patent number 8,859,886
- Issue date Oct 14, 2014
- Emcore Solar Power, Inc.
- Mark A. Stan
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Power semiconductor component with charge compensation structure an...
- Patent number 8,263,450
- Issue date Sep 11, 2012
- Infineon Technologies AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for production of silicon wafer for epitaxial substrate and...
- Patent number 8,216,921
- Issue date Jul 10, 2012
- Covalent Materials Corporation
- Tatsuo Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer for promoting electron mobility and thin film transist...
- Patent number 8,178,882
- Issue date May 15, 2012
- AU Optronics Corp.
- Long-Sheng Liao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ARSENIC DIFFUSION PROFILE ENGINEERING FOR TRANSISTORS
- Publication number 20250194193
- Publication date Jun 12, 2025
- Applied Materials, Inc.
- Patricia M. LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARSENIC DIFFUSION PROFILE ENGINEERING FOR TRANSISTORS
- Publication number 20220320294
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Patricia M. LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER EVALUATION METHOD
- Publication number 20220148925
- Publication date May 12, 2022
- SK SILTRON CO., LTD.
- Jung Kil PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Source/Drain Region with Arsenic-Containing Ba...
- Publication number 20190355816
- Publication date Nov 21, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-I KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping Method
- Publication number 20190088482
- Publication date Mar 21, 2019
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20180308697
- Publication date Oct 25, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- PU-FANG CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Doped Semiconductor Layer
- Publication number 20180061962
- Publication date Mar 1, 2018
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETRO...
- Publication number 20140197411
- Publication date Jul 17, 2014
- GLOBAL FOUNDERIES INC.
- Vara Govindeswara Reddy VAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACCESS DEVICE, FABRICATION METHOD THEREOF, AND SEMICONDUCTOR MEMORY...
- Publication number 20140054532
- Publication date Feb 27, 2014
- SK HYNIX INC.
- Young Ho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140042598
- Publication date Feb 13, 2014
- Kyocera Corporation
- Masanobu KITADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Producing a Doped Semiconductor...
- Publication number 20140001514
- Publication date Jan 2, 2014
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING AN ALUMINUM P-DOPED SURFACE REGION OF A SEMICOND...
- Publication number 20130112250
- Publication date May 9, 2013
- E I DU PONT DE NEMOURS AND COMPANY
- KENNETH WARREN HANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...
- Publication number 20110250739
- Publication date Oct 13, 2011
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...
- Publication number 20110049682
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating a Multijunction Solar Cell with a Phosphorus-...
- Publication number 20100240171
- Publication date Sep 23, 2010
- Emcore Solar Power, Inc.
- Mark A. Stan
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
METHOD FOR PRODUCTION OF SILICON WAFER FOR EPITAXIAL SUBSTRATE AND...
- Publication number 20100093156
- Publication date Apr 15, 2010
- COVALENT MATERIALS CORPORATION
- Tatsuo FUJII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER FOR PROMOTING ELECTRON MOBILITY AND THIN FILM TRANSIST...
- Publication number 20090321744
- Publication date Dec 31, 2009
- AU Optronics Corp.
- Long-Sheng Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial growth susceptor
- Publication number 20090314210
- Publication date Dec 24, 2009
- Masayuki Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...
- Publication number 20090252974
- Publication date Oct 8, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED W...
- Publication number 20090127673
- Publication date May 21, 2009
- Oerlikon Trading AG, Truebbach
- Ulrich Kroll
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
POWER SEMICONDUCTOR COMPONENT WITH CHARGE COMPENSATION STRUCTURE AN...
- Publication number 20090130806
- Publication date May 21, 2009
- Infineon Technologies Austria AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffusion Control in Heavily Doped Substrates
- Publication number 20090004458
- Publication date Jan 1, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURE THEREOF
- Publication number 20080242067
- Publication date Oct 2, 2008
- Masanobu Ogino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Method for Optimizing the Efficiency of Germanium Jun...
- Publication number 20080149177
- Publication date Jun 26, 2008
- EMCORE CORPORATION
- Mark A. Stan
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED W...
- Publication number 20080076237
- Publication date Mar 27, 2008
- OC OERLIKON BALZERS AG
- Ulrich Kroll
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Manufacturing method of semiconductor wafer and semiconductor wafer...
- Publication number 20070128836
- Publication date Jun 7, 2007
- Syouji Nogami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Component With Charge Compensation Structure An...
- Publication number 20070108512
- Publication date May 17, 2007
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two layer lto temperature oxide backside seal for a wafer
- Publication number 20070065671
- Publication date Mar 22, 2007
- Jin-Xing Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing silicon epitaxial wafer
- Publication number 20070054468
- Publication date Mar 8, 2007
- Syo-ichi Takamizawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor apparatus, method for growing nitride semiconductor a...
- Publication number 20060145166
- Publication date Jul 6, 2006
- KYOCERA CORPORATION
- Isamu Akasaki
- C30 - CRYSTAL GROWTH

from the substrate during epitaxy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Arsenic diffusion profile engineering for transistors

Bipolar transistor and manufacturing method

Wafer evaluation method

Solar cell and solar cell module

Semiconductor device source/drain region with arsenic-containing ba...

Method of producing differently doped zones in a silicon substrate,...

Doping method

System and method for substrate wafer back side and edge cross sect...

Dual channel FinFETs having uniform fin heights

Dual channel FinFETs having uniform fin heights

Semiconductor device and method of manufacturing the semiconductor...

Method for producing a doped semiconductor layer

Semiconductor substrate and manufacturing method of the same

Field-effect transistor and method for the fabrication thereof

System and method for providing an electron blocking layer with dop...

Epitaxial growth method

System and method for providing an electron blocking layer with dop...

Fabrication method of semiconductor memory device

Composite substrate and method of manufacturing the same

Semiconductor arrangement and formation thereof

System and method for substrate wafer back side and edge cross sect...

Epitaxial growth method

Semiconductor devices with dopant migration suppression and method...

Process of forming an aluminum p-doped surface region of a semicond...

Access device having counter doping layer and semiconductor memory...

Multijunction solar cell with two step diffusion region in substrate

Method of fabricating a multijunction solar cell

Power semiconductor component with charge compensation structure an...

Method for production of silicon wafer for epitaxial substrate and...

Buffer layer for promoting electron mobility and thin film transist...

Patents Applicationslast 30 patents

ARSENIC DIFFUSION PROFILE ENGINEERING FOR TRANSISTORS

ARSENIC DIFFUSION PROFILE ENGINEERING FOR TRANSISTORS

WAFER EVALUATION METHOD

Semiconductor Device Source/Drain Region with Arsenic-Containing Ba...

Doping Method

SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME

Method for Producing a Doped Semiconductor Layer

METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETRO...

ACCESS DEVICE, FABRICATION METHOD THEREOF, AND SEMICONDUCTOR MEMORY...

COMPOSITE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

Semiconductor Device and Method for Producing a Doped Semiconductor...

PROCESS OF FORMING AN ALUMINUM P-DOPED SURFACE REGION OF A SEMICOND...

EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...

SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...

Method of Fabricating a Multijunction Solar Cell with a Phosphorus-...

METHOD FOR PRODUCTION OF SILICON WAFER FOR EPITAXIAL SUBSTRATE AND...

BUFFER LAYER FOR PROMOTING ELECTRON MOBILITY AND THIN FILM TRANSIST...

Epitaxial growth susceptor

EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...

METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED W...

POWER SEMICONDUCTOR COMPONENT WITH CHARGE COMPENSATION STRUCTURE AN...

Diffusion Control in Heavily Doped Substrates

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURE THEREOF

Apparatus and Method for Optimizing the Efficiency of Germanium Jun...

METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED W...

Manufacturing method of semiconductor wafer and semiconductor wafer...

Power Semiconductor Component With Charge Compensation Structure An...

Two layer lto temperature oxide backside seal for a wafer

Method for producing silicon epitaxial wafer

Semiconductor apparatus, method for growing nitride semiconductor a...