further characterised by the doping material

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H01L29/207

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/207further characterised by the doping material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Heterojunction semiconductor device with low on-resistance
- Patent number 12,224,340
- Issue date Feb 11, 2025
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,218,204
- Issue date Feb 4, 2025
- SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
- Ha Jong Bong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,211,923
- Issue date Jan 28, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric channel field effect transistor
- Patent number 12,191,375
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,932
- Issue date Dec 3, 2024
- Kabushiki Kaisha Toshiba
- Jumpei Tajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor
- Patent number 12,154,982
- Issue date Nov 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gökhan Atmaca
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 12,125,903
- Issue date Oct 22, 2024
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,094,934
- Issue date Sep 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure comprising p-type N-face GAN-based semicond...
- Patent number 12,080,786
- Issue date Sep 3, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride diode with a modified access region
- Patent number 12,080,807
- Issue date Sep 3, 2024
- Finwave Semiconductor, Inc.
- Dongfei Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device
- Patent number 12,068,410
- Issue date Aug 20, 2024
- Epistar Corporation
- Ya-Yu Yang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Enhancement-mode N-channel and P-channel GaN device integration str...
- Patent number 12,051,742
- Issue date Jul 30, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 12,040,380
- Issue date Jul 16, 2024
- United Microelectronics Corp.
- Chun-Pin Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,027,615
- Issue date Jul 2, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing a substrate for a sem...
- Patent number 12,002,859
- Issue date Jun 4, 2024
- Jenoptik Optical Systems GmbH
- Jos Boschker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, high electron mobility transistor and fabr...
- Patent number 11,967,642
- Issue date Apr 23, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor with multiple nitride regions of different im...
- Patent number 11,955,520
- Issue date Apr 9, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and high electron mobility transistor
- Patent number 11,942,519
- Issue date Mar 26, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,422
- Issue date Mar 5, 2024
- GlobalWafers Co., Ltd.
- Ming-Shien Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride laminate, semiconductor element, and method for p...
- Patent number 11,908,902
- Issue date Feb 20, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing the same, power circ...
- Patent number 11,894,452
- Issue date Feb 6, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nucleation layer deposition method
- Patent number 11,887,848
- Issue date Jan 30, 2024
- Aixtron SE
- Christof Martin Mauder
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,888,054
- Issue date Jan 30, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor and method for manufacturing same
- Patent number 11,888,033
- Issue date Jan 30, 2024
- Japan Science and Technology Agency
- Hiroshi Fujioka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure and manufacturing method for the semiconduc...
- Patent number 11,876,129
- Issue date Jan 16, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating a semiconductor device
- Patent number 11,869,963
- Issue date Jan 9, 2024
- Infineon Technologies AG
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for controlling dopant diffusion and activation
- Patent number 11,843,042
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ching-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,824,108
- Issue date Nov 21, 2023
- Fujitsu Limited
- Atsushi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,817,318
- Issue date Nov 14, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,817,483
- Issue date Nov 14, 2023
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040174
- Publication date Jan 30, 2025
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015173
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250006798
- Publication date Jan 2, 2025
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240401184
- Publication date Dec 5, 2024
- TOSOH CORPORATION
- Yuya SUEMOTO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ENHANCED BUFFER AND BACKBARRIER REGIONS
- Publication number 20240371992
- Publication date Nov 7, 2024
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED GAN-BASED HEMT DEVICE, DEVICE EPITAXY, AND PREPARATION MET...
- Publication number 20240363694
- Publication date Oct 31, 2024
- Genettice(Qingdao)Semiconductor Materials Co., Ltd.
- Wang MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTR...
- Publication number 20240347604
- Publication date Oct 17, 2024
- NGK INSULATORS, LTD.
- Kentaro NONAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED SUBSTRATE
- Publication number 20240339492
- Publication date Oct 10, 2024
- Sumitomo Chemical Company, Limited
- Yoshinobu Narita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240313061
- Publication date Sep 19, 2024
- Panasonic Holdings Corporation
- Daisuke SHIBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE N-CHANNEL AND P-CHANNEL GAN DEVICE INTEGRATION STR...
- Publication number 20240266430
- Publication date Aug 8, 2024
- SOUTHEAST UNIVERSITY
- Long ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240266420
- Publication date Aug 8, 2024
- Nippon Telegraph and Telephone Corporation
- Yuki Yoshiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240243185
- Publication date Jul 18, 2024
- United Microelectronics Corp.
- Huan Chi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE, POWER RECEPTION DEVICE AND POWER TRANSMISSION SYSTEM
- Publication number 20240194798
- Publication date Jun 13, 2024
- POWDEC K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE CONTINUOUS GRADED BACK BARRIER GROUP III-NITRIDE HIGH ELECTR...
- Publication number 20240162341
- Publication date May 16, 2024
- Raytheon Company
- Maher Bishara Tahhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE
- Publication number 20240154004
- Publication date May 9, 2024
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICES WITH A CONDUCTIVE COMPONENT TO CONTR...
- Publication number 20240097016
- Publication date Mar 21, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IM...
- Publication number 20240096969
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPE P GALIUM NITRIDE ELECTRONIC COMPONENT
- Publication number 20240088281
- Publication date Mar 14, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Erwan MORVAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20240079486
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Ting CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240063303
- Publication date Feb 22, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION DEVICES FORMED BY FIELD ASSISTED DIFFUSION OF DOPANTS
- Publication number 20240047516
- Publication date Feb 8, 2024
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Vincenzo Lordi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240038887
- Publication date Feb 1, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ziming DU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240030336
- Publication date Jan 25, 2024
- Rohm Co., Ltd.
- Norikazu ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240030335
- Publication date Jan 25, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240014273
- Publication date Jan 11, 2024
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaAs WAFER AND METHOD OF PRODUCING GaAs INGOT
- Publication number 20230392291
- Publication date Dec 7, 2023
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Naoya SUNACHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20230387203
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING
- Publication number 20230387282
- Publication date Nov 30, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Pravanshu Mohanta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR
- Publication number 20230378309
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE HIGH-ELECTRON-MOBILITY TRANSISTOR HAVING N-I-P SEM...
- Publication number 20230352574
- Publication date Nov 2, 2023
- Unikorn Semiconductor Corporation
- Shang-Ju Tu
- H01 - BASIC ELECTRIC ELEMENTS

further characterised by the doping material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Heterojunction semiconductor device with low on-resistance

Semiconductor device

Semiconductor structure and forming method thereof

Ferroelectric channel field effect transistor

Semiconductor device

Gallium nitride transistor

High electron mobility transistor and method for fabricating the same

Semiconductor device and method for manufacturing the same

Semiconductor structure comprising p-type N-face GAN-based semicond...

III-nitride diode with a modified access region

Semiconductor power device

Enhancement-mode N-channel and P-channel GaN device integration str...

High electron mobility transistor and method for fabricating the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method for producing a substrate for a sem...

Semiconductor structure, high electron mobility transistor and fabr...

Nitride semiconductor with multiple nitride regions of different im...

Semiconductor structure and high electron mobility transistor

Semiconductor device

Group III nitride laminate, semiconductor element, and method for p...

Semiconductor device, method for manufacturing the same, power circ...

Nucleation layer deposition method

Semiconductor device and method for manufacturing the same

Compound semiconductor and method for manufacturing same

Semiconductor structure and manufacturing method for the semiconduc...

Semiconductor device and method of fabricating a semiconductor device

Structures and methods for controlling dopant diffusion and activation

Semiconductor device

GaN devices with ion implanted ohmic contacts and method of fabrica...

Semiconductor device and method for manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

LAMINATE AND METHOD FOR MANUFACTURING SAME

FIELD EFFECT TRANSISTOR WITH ENHANCED BUFFER AND BACKBARRIER REGIONS

ENHANCED GAN-BASED HEMT DEVICE, DEVICE EPITAXY, AND PREPARATION MET...

GROUP III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTR...

MULTILAYERED SUBSTRATE

NITRIDE SEMICONDUCTOR DEVICE

ENHANCEMENT-MODE N-CHANNEL AND P-CHANNEL GAN DEVICE INTEGRATION STR...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

DIODE, POWER RECEPTION DEVICE AND POWER TRANSMISSION SYSTEM

DOUBLE CONTINUOUS GRADED BACK BARRIER GROUP III-NITRIDE HIGH ELECTR...

NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE

COMPOUND SEMICONDUCTOR DEVICES WITH A CONDUCTIVE COMPONENT TO CONTR...

NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IM...

DOPE P GALIUM NITRIDE ELECTRONIC COMPONENT

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

SEMICONDUCTOR STRUCTURE

SUPERJUNCTION DEVICES FORMED BY FIELD ASSISTED DIFFUSION OF DOPANTS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

GaAs WAFER AND METHOD OF PRODUCING GaAs INGOT

GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME

HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING

FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR

ENHANCEMENT MODE HIGH-ELECTRON-MOBILITY TRANSISTOR HAVING N-I-P SEM...