further characterised by the doping material

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CPC
H01L29/227

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/227further characterised by the doping material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Crystalline oxide semiconductor film and semiconductor device
- Patent number 11,967,618
- Issue date Apr 23, 2024
- FLOSFIA INC.
- Isao Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystalline oxide semiconductor film and semiconductor device
- Patent number 11,393,906
- Issue date Jul 19, 2022
- FLOSFIA INC.
- Isao Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Source and drain formation using self-aligned processes
- Patent number 10,541,135
- Issue date Jan 21, 2020
- International Business Machines Corporation
- Seyoung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array substrate for thin-film transistor and display device of the...
- Patent number 10,529,806
- Issue date Jan 7, 2020
- LG Display Co., Ltd.
- Changeun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hemt having heavily doped N-type regions and process of forming the...
- Patent number 10,211,323
- Issue date Feb 19, 2019
- Sumitomo Electric Industries, Ltd
- Ken Nakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain formation using self-aligned processes
- Patent number 10,153,159
- Issue date Dec 11, 2018
- International Business Machines Corporation
- Seyoung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide thin film transistor, array substrate and display device
- Patent number 10,141,449
- Issue date Nov 27, 2018
- BOE Technology Group Co., Ltd.
- Meili Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate and manufacturing method thereof
- Patent number 10,014,210
- Issue date Jul 3, 2018
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of defect induced leakage in III-V semiconductor devices
- Patent number 10,002,929
- Issue date Jun 19, 2018
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing transistor according to selective printing...
- Patent number 9,997,709
- Issue date Jun 12, 2018
- Dongguk University Industry-Academic Cooperation Foundation
- Yong Young Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystals of semiconductor material having a tuned band gap energy a...
- Patent number 9,771,263
- Issue date Sep 26, 2017
- Technion Research and Development Foundation Ltd.
- Boaz Pokroy
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Thermal doping by vacancy formation in nanocrystals
- Patent number 9,754,802
- Issue date Sep 5, 2017
- Yissum Research Development Company of the Hebrew University of Jerusalem Ltd.
- Uri Banin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Doped zinc oxide as n+ layer for semiconductor devices
- Patent number 9,722,033
- Issue date Aug 1, 2017
- International Business Machines Corporation
- Joel P. DeSouza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heavily doped semiconductor nanoparticles
- Patent number 9,543,385
- Issue date Jan 10, 2017
- Yissum Research Development Company of the Hebrew University of Jerusalem Ltd.
- Guy Cohen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum rod and method of fabricating the same
- Patent number 9,543,394
- Issue date Jan 10, 2017
- LG Display Co., Ltd.
- Kyung-Seok Jeong
- B82 - NANO-TECHNOLOGY
Information Patent Grant
P-type ZnO based compound semiconductor layer, a ZnO based compound...
- Patent number 9,496,350
- Issue date Nov 15, 2016
- Stanley Electric Co., Ltd.
- Chizu Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum rod and method of fabricating the same
- Patent number 9,224,920
- Issue date Dec 29, 2015
- LG Display Co., Ltd.
- Kyung-Seok Jeong
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for preparing p-type ZnO-based material
- Patent number 8,722,456
- Issue date May 13, 2014
- Hangzhou Bluelight Opto-Electronic Material Co., Ltd.
- Zhizhen Ye
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bipolar transistor structure and method including emitter-base inte...
- Patent number 8,482,101
- Issue date Jul 9, 2013
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-type doping of zinc telluride
- Patent number 8,288,255
- Issue date Oct 16, 2012
- Varian Semiconductor Equipment Associates, Inc.
- Xianfeng Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a partly or completely semi-insulating or p-typ...
- Patent number 8,216,926
- Issue date Jul 10, 2012
- Commissariat a l'Energie Atomique
- Maurice Couchaud
- C30 - CRYSTAL GROWTH
Information Patent Grant
II-VI core-shell semiconductor nanowires
- Patent number 8,212,236
- Issue date Jul 3, 2012
- Eastman Kodak Company
- Keith B. Kahen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of co-doping group 14 (4B) elements to produce ZnTe system c...
- Patent number 7,696,073
- Issue date Apr 13, 2010
- Nippon Mining & Metals Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing ZnTe system compound semiconductor single crys...
- Patent number 7,629,625
- Issue date Dec 8, 2009
- Nippon Mining & Metals Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing ZnTe system compound semiconductor single crys...
- Patent number 7,521,282
- Issue date Apr 21, 2009
- Nippon Mining & Metals Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing ZnTe system compound semiconductor single crys...
- Patent number 7,517,720
- Issue date Apr 14, 2009
- Nippon Mining & Metals Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type group II-VI semiconductor compounds
- Patent number 7,473,925
- Issue date Jan 6, 2009
- On International, Inc.
- Robert H. Burgener, II
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing ZnTe compound semiconductor single crystal...
- Patent number 7,358,159
- Issue date Apr 15, 2008
- Nippon Mining & Metals Co., Ltd.
- Tetsuya Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices formed of high-purity molybdenum oxide
- Patent number 7,250,630
- Issue date Jul 31, 2007
- Takashi Katoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type group II-VI semiconductor compounds
- Patent number 7,161,173
- Issue date Jan 9, 2007
- Robert H. Burgener, II
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CRYSTALLINE OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
- Publication number 20220302263
- Publication date Sep 22, 2022
- FLOSFIA INC.
- Isao TAKAHASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
OXYGEN GETTERS FOR ACTIVATION OF GROUP V DOPANTS IN II-VI SEMICONDU...
- Publication number 20210210606
- Publication date Jul 8, 2021
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Eric Michael COLEGROVE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLINE OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
- Publication number 20190305091
- Publication date Oct 3, 2019
- FLOSFIA INC.
- Isao TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN FORMATION USING SELF-ALIGNED PROCESSES
- Publication number 20190164756
- Publication date May 30, 2019
- International Business Machines Corporation
- Seyoung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE SWITCH ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND D...
- Publication number 20180308876
- Publication date Oct 25, 2018
- HKC Corporation Limited
- CHUNG-KUANG CHIEN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TWO-DIMENSIONAL ELECTRONIC DEVICES AND RELATED FABRICATION METHODS
- Publication number 20180308941
- Publication date Oct 25, 2018
- Yu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT HAVING HEAVILY DOPED N-TYPE REGIONS AND PROCESS OF FORMING THE...
- Publication number 20180182871
- Publication date Jun 28, 2018
- Sumitomo Electric Industries, Ltd.
- Ken NAKATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Array Substrate for Thin-Film Transistor and Display Device of the...
- Publication number 20180097062
- Publication date Apr 5, 2018
- LG Display Co., Ltd.
- Changeun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20170256616
- Publication date Sep 7, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20170256440
- Publication date Sep 7, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE
- Publication number 20170117416
- Publication date Apr 27, 2017
- BOE TECHNOLOGY GROUP CO., LTD.
- Meili WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT HAVING HEAVILY DOPED N-TYPE REGIONS AND PROCESS OF FORMING THE...
- Publication number 20170092747
- Publication date Mar 30, 2017
- Sumitomo Electric Industries, Ltd.
- Ken NAKATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED ZINC OXIDE AS N+ LAYER FOR SEMICONDUCTOR DEVICES
- Publication number 20160190260
- Publication date Jun 30, 2016
- International Business Machines Corporation
- Joel P. DeSouza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, A ZnO BASED COMPOUND...
- Publication number 20150287794
- Publication date Oct 8, 2015
- Stanley Electric Co., Ltd
- Chizu SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20150221774
- Publication date Aug 6, 2015
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALS OF SEMICONDUCTOR MATERIAL HAVING A TUNED BAND GAP ENERGY A...
- Publication number 20150090942
- Publication date Apr 2, 2015
- Technion Research & Development Foundation Ltd.
- Boaz POKROY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE DOPING OF II-VI MATERIALS WITH RAPID VAPOR DEPOSITION USING...
- Publication number 20150053259
- Publication date Feb 26, 2015
- PLANT PV
- Brian E. Hardin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER,...
- Publication number 20140183531
- Publication date Jul 3, 2014
- Stanley Electric Co., Ltd
- Chizu SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM ROD AND METHOD OF FABRICATING THE SAME
- Publication number 20140145144
- Publication date May 29, 2014
- LG Display Co., Ltd.
- Kyung-Seok Jeong
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER,...
- Publication number 20140027766
- Publication date Jan 30, 2014
- Stanley Electric Co., Ltd
- Chizu SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAVILY DOPED SEMICONDUCTOR NANOPARTICLES
- Publication number 20130299772
- Publication date Nov 14, 2013
- Ramot at Tel Aviv University Ltd.
- Guy Cohen
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR PREPARING P-TYPE ZnO-BASED MATERIAL
- Publication number 20130183797
- Publication date Jul 18, 2013
- Hangzhou Bluelight Opto-electronic Material Co., Ltd.
- Zhizhen Ye
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH-PERFORMANCE HETEROSTRUCTURE FET DEVICES AND METHODS
- Publication number 20130181210
- Publication date Jul 18, 2013
- MOXTRONICS, INC.
- Yungryel Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING P-TYPE ZNO NANOWIRES AND METHOD OF MANUFACT...
- Publication number 20130112969
- Publication date May 9, 2013
- Industry-University Cooperation Foundation Hanyang University
- Hyun-jin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE DOPING OF ZINC TELLURIDE
- Publication number 20120202340
- Publication date Aug 9, 2012
- Varian Semiconductor Equipment Associates, Inc.
- Xianfeng LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE DOPING OF ZINC TELLURIDE
- Publication number 20120202341
- Publication date Aug 9, 2012
- Varian Semiconductor Equipment Associates, Inc.
- Xiangfeng LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
II-VI CORE-SHELL SEMICONDUCTOR NANOWIRES
- Publication number 20110175059
- Publication date Jul 21, 2011
- Keith B. Kahen
- B82 - NANO-TECHNOLOGY
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE AND METHOD INCLUDING EMITTER-BASE INTE...
- Publication number 20100320571
- Publication date Dec 23, 2010
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Producing a Partly or Completely Semi-Insulating or P-Typ...
- Publication number 20100200850
- Publication date Aug 12, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Maurice Couchaud
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW-TEMPERATURE SURFACE DOPING/ALLOYING/COATING OF LARGE SCALE SEMI...
- Publication number 20100180950
- Publication date Jul 22, 2010
- University of Connecticut
- Pu-Xian Gao
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

further characterised by the doping material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Crystalline oxide semiconductor film and semiconductor device

Crystalline oxide semiconductor film and semiconductor device

Source and drain formation using self-aligned processes

Array substrate for thin-film transistor and display device of the...

Hemt having heavily doped N-type regions and process of forming the...

Source and drain formation using self-aligned processes

Oxide thin film transistor, array substrate and display device

SOI substrate and manufacturing method thereof

Reduction of defect induced leakage in III-V semiconductor devices

Method for manufacturing transistor according to selective printing...

Crystals of semiconductor material having a tuned band gap energy a...

Thermal doping by vacancy formation in nanocrystals

Doped zinc oxide as n+ layer for semiconductor devices

Heavily doped semiconductor nanoparticles

Quantum rod and method of fabricating the same

P-type ZnO based compound semiconductor layer, a ZnO based compound...

Quantum rod and method of fabricating the same

Method for preparing p-type ZnO-based material

Bipolar transistor structure and method including emitter-base inte...

N-type doping of zinc telluride

Method of producing a partly or completely semi-insulating or p-typ...

II-VI core-shell semiconductor nanowires

Method of co-doping group 14 (4B) elements to produce ZnTe system c...

Method for producing ZnTe system compound semiconductor single crys...

Method for producing ZnTe system compound semiconductor single crys...

Method for producing ZnTe system compound semiconductor single crys...

P-type group II-VI semiconductor compounds

Method for manufacturing ZnTe compound semiconductor single crystal...

Electronic devices formed of high-purity molybdenum oxide

P-type group II-VI semiconductor compounds

Patents Applicationslast 30 patents

CRYSTALLINE OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

OXYGEN GETTERS FOR ACTIVATION OF GROUP V DOPANTS IN II-VI SEMICONDU...

CRYSTALLINE OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

SOURCE AND DRAIN FORMATION USING SELF-ALIGNED PROCESSES

ACTIVE SWITCH ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND D...

TWO-DIMENSIONAL ELECTRONIC DEVICES AND RELATED FABRICATION METHODS

HEMT HAVING HEAVILY DOPED N-TYPE REGIONS AND PROCESS OF FORMING THE...

Array Substrate for Thin-Film Transistor and Display Device of the...

SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF

SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF

OXIDE THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE

HEMT HAVING HEAVILY DOPED N-TYPE REGIONS AND PROCESS OF FORMING THE...

DOPED ZINC OXIDE AS N+ LAYER FOR SEMICONDUCTOR DEVICES

P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, A ZnO BASED COMPOUND...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CRYSTALS OF SEMICONDUCTOR MATERIAL HAVING A TUNED BAND GAP ENERGY A...

P-TYPE DOPING OF II-VI MATERIALS WITH RAPID VAPOR DEPOSITION USING...

METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER,...

QUANTUM ROD AND METHOD OF FABRICATING THE SAME

METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER,...

HEAVILY DOPED SEMICONDUCTOR NANOPARTICLES

METHOD FOR PREPARING P-TYPE ZnO-BASED MATERIAL

HIGH-PERFORMANCE HETEROSTRUCTURE FET DEVICES AND METHODS

METHOD OF MANUFACTURING P-TYPE ZNO NANOWIRES AND METHOD OF MANUFACT...

N-TYPE DOPING OF ZINC TELLURIDE

N-TYPE DOPING OF ZINC TELLURIDE

II-VI CORE-SHELL SEMICONDUCTOR NANOWIRES

BIPOLAR TRANSISTOR STRUCTURE AND METHOD INCLUDING EMITTER-BASE INTE...

Method of Producing a Partly or Completely Semi-Insulating or P-Typ...

LOW-TEMPERATURE SURFACE DOPING/ALLOYING/COATING OF LARGE SCALE SEMI...