Gallium arsenide

Industry

CPC
C30B29/42

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/42Gallium arsenide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing large EMI shielded GaAs and GaP infrared windows
- Patent number 12,084,791
- Issue date Sep 10, 2024
- BAE Systems Information and Electronic Systems Integration Inc.
- Peter G. Schunemann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 12,084,790
- Issue date Sep 10, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a monocrystalline layer of GaAs material a...
- Patent number 11,976,380
- Issue date May 7, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device and method of manufacturing AIII-BV-crystals and substrate w...
- Patent number 11,965,266
- Issue date Apr 23, 2024
- Freiberger Compound Materials GMBH
- Stefan Eichler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase epitaxy method
- Patent number 11,955,334
- Issue date Apr 9, 2024
- Azur Space Solar Power GmbH
- Gregor Keller
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal and substrate of conductive GaAs, and method for forming th...
- Patent number 11,955,251
- Issue date Apr 9, 2024
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Gallium arsenide single crystal substrate and method for producing...
- Patent number 11,891,720
- Issue date Feb 6, 2024
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- G01 - MEASURING TESTING
Information Patent Grant
Layered GaAs, method of preparing same, and GaAs nanosheet exfoliat...
- Patent number 11,802,350
- Issue date Oct 31, 2023
- Industry-Academic Cooperation Foundation, Yonsei University
- Woo Young Shim
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Concentric flow reactor
- Patent number 11,702,761
- Issue date Jul 18, 2023
- AlignedBio AB
- Greg Alcott
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 11,680,340
- Issue date Jun 20, 2023
- AXT, Inc.
- Rajaram Shetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a sheet from a melt by imposing a periodic cha...
- Patent number 11,661,672
- Issue date May 30, 2023
- Carnegie Mellon University
- B. Erik Ydstie
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for improved III/V nano-ridge fabrication on silicon
- Patent number 11,655,558
- Issue date May 23, 2023
- Imec VZW
- Bernardette Kunert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Layered group III-V compound and nanosheet containing arsenic, and...
- Patent number 11,634,340
- Issue date Apr 25, 2023
- Industry-Academic Cooperation Foundation, Yonsei University
- Woo-young Shim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gallium arsenide single crystal and preparation method thereof
- Patent number 11,624,129
- Issue date Apr 11, 2023
- SHANXI CHINA CRYSTAL TECHNOLOGIES CO., LTD.
- Youjun Gao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystallization of two-dimensional structures comprising multiple t...
- Patent number 11,621,163
- Issue date Apr 4, 2023
- The Regents of the University of California
- Nobuhiko Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,603,603
- Issue date Mar 14, 2023
- United States of Americas as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a monocrystalline layer of GaAs material a...
- Patent number 11,549,195
- Issue date Jan 10, 2023
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,535,951
- Issue date Dec 27, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized Heteropitaxial growth of semiconductors
- Patent number 11,434,583
- Issue date Sep 6, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium arsenide crystal substrate
- Patent number 11,408,091
- Issue date Aug 9, 2022
- Sumitomo Electric Industries, Ltd.
- Masanori Morishita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,390,963
- Issue date Jul 19, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for high growth rate deposition for forming different cells...
- Patent number 11,393,683
- Issue date Jul 19, 2022
- UTICA LEASECO, LLC
- Lori D. Washington
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaAs1-xSbx nanowires on a graphitic substrate
- Patent number 11,384,286
- Issue date Jul 12, 2022
- North Carolina A&T State University
- Shanthi Iyer
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
GAAS WAFER, GAAS WAFER GROUP, AND METHOD OF PRODUCING GAAS INGOT
- Publication number 20240392475
- Publication date Nov 28, 2024
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Naoya SUNACHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING PHOTONIC CRYSTAL AND METHOD FOR MANUFACTUR...
- Publication number 20240283220
- Publication date Aug 22, 2024
- SEIKO EPSON CORPORATION
- Yoshitomo KUMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED G...
- Publication number 20240274746
- Publication date Aug 15, 2024
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Kevin Louis SCHULTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
- Publication number 20240183065
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Peter G. Schunemann
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
- Publication number 20240184015
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Peter G. Schunemann
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF OPTIMIZING THE EMI SHIELDING AND INFRARED TRANSPARENCY OF...
- Publication number 20240183066
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Jeremy B. Reeves
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
METHOD OF PRODUCING LARGE EMI SHIELDED GaAs INFRARED WINDOWS
- Publication number 20240188261
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Peter G. Schunemann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF PRODUCING LARGE EMI SHIELDED GaAs AND GaP INFRARED WINDOWS
- Publication number 20240183075
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Peter G. Schunemann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMI-INSULATING GALLIUM ARSENIDE SINGLE CRYSTAL, PREPARATION METHOD...
- Publication number 20240093402
- Publication date Mar 21, 2024
- SHANXI CHINA CRYSTAL TECHNOLOGIES CO., LTD.
- Youjun GAO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...
- Publication number 20230416941
- Publication date Dec 28, 2023
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20230407522
- Publication date Dec 21, 2023
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
GaAs WAFER AND METHOD OF PRODUCING GaAs INGOT
- Publication number 20230392291
- Publication date Dec 7, 2023
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Naoya SUNACHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER
- Publication number 20230243067
- Publication date Aug 3, 2023
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Naoya SUNACHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING SHADOW WALLS FOR FABRICATING PATTERNED STRUCTURES
- Publication number 20230227996
- Publication date Jul 20, 2023
- Microsoft Technology Licensing, LLC
- Jason Petros Heinrich JUNG
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230038745
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042689
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230033788
- Publication date Feb 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- G02 - OPTICS
Information Patent Application
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING...
- Publication number 20230002931
- Publication date Jan 5, 2023
- Sumitomo Electric Industries, Ltd.
- Koji UEMATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL A...
- Publication number 20220364266
- Publication date Nov 17, 2022
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTALLIZATION OF TWO-DIMENSIONAL STRUCTURES COMPRISING MULTIPLE T...
- Publication number 20220316086
- Publication date Oct 6, 2022
- The Regents of the University of California
- Nobuhiko Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...
- Publication number 20220298673
- Publication date Sep 22, 2022
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20220267925
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENC...
- Publication number 20220267927
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Shivashankar R. Vangala
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE AND METHOD OF MANUFACTURING AIII-BV-CRYSTALS AND SUBSTRATE W...
- Publication number 20220106702
- Publication date Apr 7, 2022
- FREIBERGER COMPOUND MATERIALS GMBH
- Stefan EICHLER
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYERED GROUP III-V COMPOUND AND NANOSHEET CONTAINING ARSENIC, AND...
- Publication number 20220073365
- Publication date Mar 10, 2022
- Industry-Academic Cooperation Foundation, Yonsei University
- Woo-young SHIM
- B82 - NANO-TECHNOLOGY
Information Patent Application
GALLIUM ARSENIDE SUBSTRATE COMPRISING A SURFACE OXIDE LAYER WITH IM...
- Publication number 20220028682
- Publication date Jan 27, 2022
- FREIBERGER COMPOUND MATERIALS GMBH
- Wolfram FLIEGEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20210310155
- Publication date Oct 7, 2021
- Sumitomo Electric Industries, Ltd.
- Hiroshi FUKUNAGA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Sheet from a Melt by Imposing a Periodic Cha...
- Publication number 20210310150
- Publication date Oct 7, 2021
- Carnegie Mellon University
- B. Erik Ydstie
- C30 - CRYSTAL GROWTH

Gallium arsenide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Method of producing large EMI shielded GaAs and GaP infrared windows

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Method for manufacturing a monocrystalline layer of GaAs material a...

Device and method of manufacturing AIII-BV-crystals and substrate w...

Vapor phase epitaxy method

Crystal and substrate of conductive GaAs, and method for forming th...

Gallium arsenide single crystal substrate and method for producing...

Layered GaAs, method of preparing same, and GaAs nanosheet exfoliat...

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Concentric flow reactor

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Method for producing a sheet from a melt by imposing a periodic cha...

Methods for improved III/V nano-ridge fabrication on silicon

Layered group III-V compound and nanosheet containing arsenic, and...

Gallium arsenide single crystal and preparation method thereof

Crystallization of two-dimensional structures comprising multiple t...

Optimized heteroepitaxial growth of semiconductors

Method for manufacturing a monocrystalline layer of GaAs material a...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteropitaxial growth of semiconductors

Gallium arsenide crystal substrate

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Methods for high growth rate deposition for forming different cells...

GaAs1-xSbx nanowires on a graphitic substrate

Patents Applicationslast 30 patents

GAAS WAFER, GAAS WAFER GROUP, AND METHOD OF PRODUCING GAAS INGOT

METHOD FOR MANUFACTURING PHOTONIC CRYSTAL AND METHOD FOR MANUFACTUR...

CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED G...

METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS

METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS

METHOD OF OPTIMIZING THE EMI SHIELDING AND INFRARED TRANSPARENCY OF...

METHOD OF PRODUCING LARGE EMI SHIELDED GaAs INFRARED WINDOWS

METHOD OF PRODUCING LARGE EMI SHIELDED GaAs AND GaP INFRARED WINDOWS

SEMI-INSULATING GALLIUM ARSENIDE SINGLE CRYSTAL, PREPARATION METHOD...

METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

GaAs WAFER AND METHOD OF PRODUCING GaAs INGOT

GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER

METHOD OF FORMING SHADOW WALLS FOR FABRICATING PATTERNED STRUCTURES

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING...

METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL A...

CRYSTALLIZATION OF TWO-DIMENSIONAL STRUCTURES COMPRISING MULTIPLE T...

METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...

Optimized Heteroepitaxial Growth of Semiconductors

QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENC...

DEVICE AND METHOD OF MANUFACTURING AIII-BV-CRYSTALS AND SUBSTRATE W...

LAYERED GROUP III-V COMPOUND AND NANOSHEET CONTAINING ARSENIC, AND...

GALLIUM ARSENIDE SUBSTRATE COMPRISING A SURFACE OXIDE LAYER WITH IM...

GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE

Method for Producing a Sheet from a Melt by Imposing a Periodic Cha...