gate conductors with different shapes, lengths or dimensions

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H01L21/82385

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/82385gate conductors with different shapes, lengths or dimensions

Industries

Patents Grantslast 30 patents

Information Patent Grant
Nanosheet transistor with ferroelectric region
- Patent number 11,973,141
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising separate different well regions wit...
- Patent number 11,967,644
- Issue date Apr 23, 2024
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Meng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide structures in semiconductor devices
- Patent number 11,961,766
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having nanosheet transistor and methods of fab...
- Patent number 11,961,840
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative capacitance transistor with external ferroelectric structure
- Patent number 11,961,897
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Hsing Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and semiconductor dev...
- Patent number 11,955,485
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,942,540
- Issue date Mar 26, 2024
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Meng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry for threshold voltage tuning on semiconductor device
- Patent number 11,935,957
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-protective layer formed on high-K dielectric layer
- Patent number 11,923,201
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of controlling the same
- Patent number 11,925,025
- Issue date Mar 5, 2024
- Renesas Electronics Corporation
- Junichi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,923,252
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including transistor stacks having diffe...
- Patent number 11,923,365
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Jeonghyuk Yim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide interlayer structure for nFET and pFET
- Patent number 11,916,128
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Min Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures having neutral zones to minimize metal gate boundar...
- Patent number 11,908,866
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in semiconductor devices
- Patent number 11,908,702
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiang-Pi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated chip with improved latch-up immunity
- Patent number 11,908,860
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and static random access memory thereof
- Patent number 11,910,586
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with non-conformal gate dieletric layers
- Patent number 11,908,745
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yung-Hsiang Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,901,454
- Issue date Feb 13, 2024
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,901,421
- Issue date Feb 13, 2024
- Samsung Electronics Co., Ltd.
- Hokyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple gate field-effect transistors having various gate oxide th...
- Patent number 11,894,276
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 11,894,379
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench plug hardmask for advanced integrated circuit structure fabr...
- Patent number 11,887,838
- Issue date Jan 30, 2024
- Intel Corporation
- Anthony St. Amour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure including forksheet transistors and...
- Patent number 11,862,700
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jia-Ni Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having dipole-inducing elements
- Patent number 11,855,098
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Yen Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND...
- Publication number 20240120402
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Ni YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20240105520
- Publication date Mar 28, 2024
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Device And Method Of Fabrication Thereof
- Publication number 20240105778
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET
- Publication number 20240096887
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Ruqiang BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- Publication number 20240096884
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS
- Publication number 20240096886
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contacts for Semiconductor Devices and Methods of Forming the Same
- Publication number 20240088244
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL STRUCTURE HAVING DIFFERENT POLY EXTENSION LENGTHS
- Publication number 20240088126
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Sing LI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY
- Publication number 20240088154
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS INCLUDING ADJUSTED WELLS AND METHODS OF MANUFACTURING THE...
- Publication number 20240072057
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Michael A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures For Semiconductor Devices
- Publication number 20240071835
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20240072042
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Hokuto KODATE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SEMICONDUCTO...
- Publication number 20240072053
- Publication date Feb 29, 2024
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240072056
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- Junggun You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SIGMA-SHAPED GROOVE
- Publication number 20240055263
- Publication date Feb 15, 2024
- Shanghai Huali Integrated Circuit Corporation
- Lian Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20240047461
- Publication date Feb 8, 2024
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240047272
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- I-MING CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20240038578
- Publication date Feb 1, 2024
- Intel Corporation
- Heidi M. MEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME
- Publication number 20240038762
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hui-Zhong ZHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240038763
- Publication date Feb 1, 2024
- Samsung Electronics Co., Ltd.
- Keun Hwi CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240014213
- Publication date Jan 11, 2024
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Zheng Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING HIGH DIELECTRIC CONSTANT METAL GATE FOR NM...
- Publication number 20230420304
- Publication date Dec 28, 2023
- Shanghai Huali Integrated Circuit Corporation
- Weiwei MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230411219
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GATE DIELECTRIC PROCESSING FOR SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20230411220
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230402457
- Publication date Dec 14, 2023
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES
- Publication number 20230402291
- Publication date Dec 14, 2023
- Applied Materials, Inc.
- Steven C. H. HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230387118
- Publication date Nov 30, 2023
- Samsung Electronics Co., Ltd.
- Su Young BAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER
- Publication number 20230386938
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huiching Chang
- H01 - BASIC ELECTRIC ELEMENTS

gate conductors with different shapes, lengths or dimensions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nanosheet transistor with ferroelectric region

Semiconductor device comprising separate different well regions wit...

Gate oxide structures in semiconductor devices

Semiconductor device having nanosheet transistor and methods of fab...

Negative capacitance transistor with external ferroelectric structure

Dual metal silicide structures for advanced integrated circuit stru...

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Method of manufacturing semiconductor devices and semiconductor dev...

Trench contact structures for advanced integrated circuit structure...

Semiconductor device and method for manufacturing the same

Geometry for threshold voltage tuning on semiconductor device

Self-protective layer formed on high-K dielectric layer

Semiconductor device and method of controlling the same

Semiconductor device and method for manufacturing the same

Integrated circuit devices including transistor stacks having diffe...

Metal oxide interlayer structure for nFET and pFET

Gate structures having neutral zones to minimize metal gate boundar...

Gate structures in semiconductor devices

Integrated chip with improved latch-up immunity

Integrated circuit and static random access memory thereof

Semiconductor device with non-conformal gate dieletric layers

Metal oxide semiconductor having epitaxial source drain regions and...

Semiconductor devices

Multiple gate field-effect transistors having various gate oxide th...

Semiconductor devices and method of manufacturing the same

Trench plug hardmask for advanced integrated circuit structure fabr...

Fin patterning for advanced integrated circuit structure fabrication

Semiconductor device structure including forksheet transistors and...

Semiconductor devices having dipole-inducing elements

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND...

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

Multi-Gate Device And Method Of Fabrication Thereof

MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET

METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER

HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS

Contacts for Semiconductor Devices and Methods of Forming the Same

CELL STRUCTURE HAVING DIFFERENT POLY EXTENSION LENGTHS

BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY

APPARATUS INCLUDING ADJUSTED WELLS AND METHODS OF MANUFACTURING THE...

Gate Structures For Semiconductor Devices

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SEMICONDUCTO...

SEMICONDUCTOR DEVICES

METHOD FOR MANUFACTURING SIGMA-SHAPED GROOVE

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

SEMICONDUCTOR STRUCTURE

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...

INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

METHOD FOR MANUFACTURING HIGH DIELECTRIC CONSTANT METAL GATE FOR NM...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

POST GATE DIELECTRIC PROCESSING FOR SEMICONDUCTOR DEVICE FABRICATION

TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES

SEMICONDUCTOR DEVICE

HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER