Gate electrodes for transistors with charge trapping gate insulator

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H01L29/4234

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/4234Gate electrodes for transistors with charge trapping gate insulator

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory cell of charge-trapping non-volatile memory
- Patent number 12,199,160
- Issue date Jan 14, 2025
- Ememory Technology Inc.
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having memory cell strings and separate read and writ...
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- Micron Technology, Inc.
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Vertical variable resistance memory devices
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- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Hyuncheol Kim
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Information Patent Grant
Methods of gate contact formation for vertical transistors
- Patent number 12,191,363
- Issue date Jan 7, 2025
- BESANG, INC.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with restrained charge migration an...
- Patent number 12,193,233
- Issue date Jan 7, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and semiconductor device
- Patent number 12,185,547
- Issue date Dec 31, 2024
- Kioxia Corporation
- Takanobu Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cool electron erasing in thin-film storage transistors
- Patent number 12,183,834
- Issue date Dec 31, 2024
- SUNRISE MEMORY CORPORATION
- Sayeef Salahuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with improved charge lateral migrat...
- Patent number 12,171,098
- Issue date Dec 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,154,958
- Issue date Nov 26, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor device including a word line struct...
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- Issue date Nov 12, 2024
- SK Hynix Inc.
- Nam Kyeong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pillar-shaped semiconductor device and method for producing the same
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- Issue date Oct 22, 2024
- Unisantis Electronics Singapore Pte. Ltd.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
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- Issue date Oct 22, 2024
- Unisantis Electronics Singapore Pte. Ltd.
- Nozomu Harada
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Information Patent Grant
Mixed signal neuromorphic computing with nonvolatile memory devices
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- Issue date Oct 1, 2024
- The Regents of the University of California
- Dmitri Strukov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Staircase patterning for 3D NAND devices
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- Issue date Sep 24, 2024
- International Business Machines Corporation
- Effendi Leobandung
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Information Patent Grant
SONOS memory cell structure and fabricating method of the same
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- Issue date Sep 17, 2024
- United Microelectronics Corp.
- Yung-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including hammerhead-shaped word li...
- Patent number 12,094,943
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Tomohiro Kubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,094,984
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing the same
- Patent number 12,089,410
- Issue date Sep 10, 2024
- Kioxia Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a stacked memory structure with insulating patterns
- Patent number 12,075,623
- Issue date Aug 27, 2024
- SK hynix Inc.
- Changhan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 12,062,704
- Issue date Aug 13, 2024
- Kioxia Corporation
- Tetsuaki Utsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,058,856
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with channel structures having plu...
- Patent number 12,052,865
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide-based electronic device and method of manufacturing...
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- Issue date Jul 30, 2024
- STMicroelectronics S.r.l.
- Patrick Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 12,048,152
- Issue date Jul 23, 2024
- Samsung Electronics Co., Ltd.
- Seokcheon Baek
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical memory devices and methods of manufacturing the same
- Patent number 12,048,156
- Issue date Jul 23, 2024
- Samsung Electronics Co., Ltd.
- Shin-Hwan Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device and method for manufacturing the same
- Patent number 12,048,157
- Issue date Jul 23, 2024
- Kioxia Corporation
- Shunsuke Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a stacked memory structure with insulating patterns
- Patent number 12,048,160
- Issue date Jul 23, 2024
- SK hynix Inc.
- Changhan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices and methods of manufacturing the same
- Patent number 12,048,158
- Issue date Jul 23, 2024
- Samsung Electronics Co., Ltd.
- Bio Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device and method for manufacturing the same
- Patent number 12,041,777
- Issue date Jul 16, 2024
- Kioxia Corporation
- Kohei Nakagami
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL NAND FLASH MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDIN...
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SILICON CARBIDE-BASED ELECTRONIC DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20250015155
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- STMicroelectronics S.r.l.
- Patrick FIORENZA
- H01 - BASIC ELECTRIC ELEMENTS
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NON-VOLATILE MEMORY AND CORRESPONDING MANUFACTURING METHOD
- Publication number 20250006267
- Publication date Jan 2, 2025
- STMicroelectronics International N.V.
- Radouane Habhab
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240397721
- Publication date Nov 28, 2024
- KIOXIA Corporation
- Yoshiaki Fukuzumi
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240389323
- Publication date Nov 21, 2024
- SK HYNIX INC.
- In Ku KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240372011
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240365542
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Cheng WU
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE
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- Publication date Oct 24, 2024
- Rohm Co., Ltd.
- Yasunobu HAYASHI
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Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20240332385
- Publication date Oct 3, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
STORAGE TRANSISTOR OF CHARGE-TRAPPING NON-VOLATILE MEMORY
- Publication number 20240324225
- Publication date Sep 26, 2024
- EMEMORY TECHNOLOGY INC.
- Chun-Hsiao LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCT...
- Publication number 20240313073
- Publication date Sep 19, 2024
- SK HYNIX INC.
- Jae Hyun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20240304693
- Publication date Sep 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells and Integrated Assemblies having Charge-Trapping-Mater...
- Publication number 20240297257
- Publication date Sep 5, 2024
- Micron Technology, Inc.
- Manzar Siddik
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
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- Publication date Aug 29, 2024
- KIOXIA Corporation
- Takeshi KAMIGAICHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING FIRST STRUCTURE HAVING PERIPHERAL CIRCUIT AND SECO...
- Publication number 20240282753
- Publication date Aug 22, 2024
- Samsung Electronics Co., Ltd.
- Eunji KIM
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Information Patent Application
VERTICAL MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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- Publication date Aug 15, 2024
- Samsung Electronics Co., Ltd.
- SUNGBOK LEE
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NON-VOLATILE MEMORY DEVICE
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- Publication date Jul 25, 2024
- KIOXIA Corporation
- Takashi ISHIDA
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Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
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- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Younghwan Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS
- Publication number 20240237351
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Taisoo Lim
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Information Patent Application
SYNAPSE DEVICE, MANUFACTURING METHOD THEREOF, AND NEUROMORPHIC DEVI...
- Publication number 20240234584
- Publication date Jul 11, 2024
- SK HYNIX INC.
- Yang Kyu CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
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- Publication date Jul 11, 2024
- RENESAS ELECTRONICS CORPORATION
- Hitoshi MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20240234550
- Publication date Jul 11, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
VERTICAL NAND FLASH MEMORY DEVICE
- Publication number 20240224530
- Publication date Jul 4, 2024
- Samsung Electronics Co., Ltd.
- Seungdam HYUN
- G11 - INFORMATION STORAGE
Information Patent Application
SONOS memory cell structure and fabricating method of the same
- Publication number 20240224529
- Publication date Jul 4, 2024
- UNITED MICROELECTRONICS CORP.
- Yung-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
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- Publication date Jun 27, 2024
- KIOXIA Corporation
- Tomonori KAJINO
- G11 - INFORMATION STORAGE
Information Patent Application
SILICON-OXIDE-NITRIDE-OXIDE-SILICON MEMORY CELL
- Publication number 20240215251
- Publication date Jun 27, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Ching Hsu
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Information Patent Application
Memory Array Comprising Strings Of Memory Cells And Methods Includi...
- Publication number 20240203496
- Publication date Jun 20, 2024
- Micron Technology, Inc.
- John D. Hopkins
- G11 - INFORMATION STORAGE
Information Patent Application
CONFINED CHARGE TRAP LAYER
- Publication number 20240206172
- Publication date Jun 20, 2024
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...
- Publication number 20240206183
- Publication date Jun 20, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240194797
- Publication date Jun 13, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Sung Huang
- H01 - BASIC ELECTRIC ELEMENTS

Gate electrodes for transistors with charge trapping gate insulator

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory cell of charge-trapping non-volatile memory

Memory device having memory cell strings and separate read and writ...

Vertical variable resistance memory devices

Methods of gate contact formation for vertical transistors

Three-dimensional memory device with restrained charge migration an...

Semiconductor substrate and semiconductor device

Cool electron erasing in thin-film storage transistors

Three-dimensional memory device with improved charge lateral migrat...

Semiconductor structure

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Three-dimensional semiconductor device including a word line struct...

Pillar-shaped semiconductor device and method for producing the same

Semiconductor memory device

Mixed signal neuromorphic computing with nonvolatile memory devices

Staircase patterning for 3D NAND devices

SONOS memory cell structure and fabricating method of the same

Three-dimensional memory device including hammerhead-shaped word li...

Semiconductor device

Semiconductor memory device and method for manufacturing the same

Method of forming a stacked memory structure with insulating patterns

Semiconductor memory device

Semiconductor device and manufacturing method thereof

Three-dimensional memory devices with channel structures having plu...

Silicon carbide-based electronic device and method of manufacturing...

Vertical memory devices

Vertical memory devices and methods of manufacturing the same

Semiconductor storage device and method for manufacturing the same

Method of forming a stacked memory structure with insulating patterns

Vertical memory devices and methods of manufacturing the same

Semiconductor storage device and method for manufacturing the same

Patents Applicationslast 30 patents

VERTICAL NAND FLASH MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDIN...

SILICON CARBIDE-BASED ELECTRONIC DEVICE AND METHOD OF MANUFACTURING...

NON-VOLATILE MEMORY AND CORRESPONDING MANUFACTURING METHOD

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

STORAGE TRANSISTOR OF CHARGE-TRAPPING NON-VOLATILE MEMORY

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCT...

METHOD OF FORMING TOP SELECT GATE TRENCHES

Memory Cells and Integrated Assemblies having Charge-Trapping-Mater...

SEMICONDUCTOR DEVICE

DEVICE INCLUDING FIRST STRUCTURE HAVING PERIPHERAL CIRCUIT AND SECO...

VERTICAL MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

NON-VOLATILE MEMORY DEVICE

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES

SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS

SYNAPSE DEVICE, MANUFACTURING METHOD THEREOF, AND NEUROMORPHIC DEVI...

SEMICONDUCTOR DEVICE

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

VERTICAL NAND FLASH MEMORY DEVICE

SONOS memory cell structure and fabricating method of the same

SEMICONDUCTOR MEMORY DEVICE

SILICON-OXIDE-NITRIDE-OXIDE-SILICON MEMORY CELL

Memory Array Comprising Strings Of Memory Cells And Methods Includi...

CONFINED CHARGE TRAP LAYER

HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF