Gated diodes

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H01L29/66356

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66356Gated diodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Gated metal-insulator-semiconductor (MIS) tunnel diode having negat...
- Patent number 12,100,753
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with reduced loss and manufacturing meth...
- Patent number 12,087,848
- Issue date Sep 10, 2024
- TRINNO TECHNOLOGY CO., LTD.
- Kwang Hoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of semiconductor arrangement comprising semiconductor column
- Patent number 12,074,220
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistor cell
- Patent number 11,990,531
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hay-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,894,258
- Issue date Feb 6, 2024
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures with one or more raised terminals
- Patent number 11,804,543
- Issue date Oct 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including source/drain employing double-charge dopants
- Patent number 11,757,004
- Issue date Sep 12, 2023
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gated metal-insulator-semiconductor (MIS) tunnel diode having negat...
- Patent number 11,757,025
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Twin gate tunnel field-effect transistor (FET)
- Patent number 11,557,663
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Karthik Balakrishnan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical tunneling FinFET
- Patent number 11,515,418
- Issue date Nov 29, 2022
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge storage and sensing devices and methods
- Patent number 11,502,189
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode connected vertical transistor
- Patent number 11,362,086
- Issue date Jun 14, 2022
- International Business Machines Corporation
- Karthik Balakrishnan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,362,202
- Issue date Jun 14, 2022
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement comprising buffer layer and semiconductor...
- Patent number 11,335,811
- Issue date May 17, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudo Schottky diode
- Patent number 11,309,409
- Issue date Apr 19, 2022
- Nexperia B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diodes employing back-side semiconductor or metal
- Patent number 11,264,405
- Issue date Mar 1, 2022
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect-transistors
- Patent number 11,227,919
- Issue date Jan 18, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling field-effect transistor and method for manufacturing tunn...
- Patent number 11,152,500
- Issue date Oct 19, 2021
- Huawei Technologies Co., Ltd.
- Jing Zhao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thyristor volatile random access memory and methods of manufacture
- Patent number 11,114,438
- Issue date Sep 7, 2021
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistors with metal source and drain contacts including a Heusle...
- Patent number 11,107,908
- Issue date Aug 31, 2021
- Intel Corporation
- Sasikanth Manipatruni
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanosheet gated diode
- Patent number 11,101,374
- Issue date Aug 24, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precise junction placement in vertical semiconductor devices using...
- Patent number 11,088,278
- Issue date Aug 10, 2021
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid finfet structure with bulk source/drain regions
- Patent number 11,075,286
- Issue date Jul 27, 2021
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistor cell and fabricating the...
- Patent number 11,011,621
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-defect graphene-based devices and interconnects
- Patent number 10,998,405
- Issue date May 4, 2021
- Intel Corporation
- Paul A. Zimmerman
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Twin gate field effect diode
- Patent number 10,937,903
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biological sensing system
- Patent number 10,908,155
- Issue date Feb 2, 2021
- EXACT BIOCHIP CORPORATION
- Jeng-Tzong Sheu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating tunneling field effect transistor having int...
- Patent number 10,886,395
- Issue date Jan 5, 2021
- United Microelectronics Corp.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunnel field effect transistor (FET)
- Patent number 10,872,972
- Issue date Dec 22, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Kumar Bhuwalka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gated metal-insulator-semiconductor (MIS) tunnel diode having negat...
- Patent number 10,868,157
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...
- Publication number 20240387712
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
- Publication number 20240372006
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunneling Field Effect Transistor and Manufacturing Method Thereof,...
- Publication number 20240297243
- Publication date Sep 5, 2024
- BOE TECHNOLOGY GROUP CO., LTD.
- Jiayu HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240290877
- Publication date Aug 29, 2024
- Infineon Technologies Austria AG
- Britta Wutte
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT, SEMICONDUCTOR INTEGRATED CIRCUIT, AND PRODUC...
- Publication number 20240186404
- Publication date Jun 6, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Kimihiko Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240162078
- Publication date May 16, 2024
- FUJI ELECTRIC CO., LTD.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240113189
- Publication date Apr 4, 2024
- Mitsubishi Electric Corporation
- Koichi NISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...
- Publication number 20230387277
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH REDUCED LOSS AND MANUFACTURING METH...
- Publication number 20230317837
- Publication date Oct 5, 2023
- TRinno Technology Co., Ltd.
- Kwang Hoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES WITH ONE OR MORE RAISED TERMINALS
- Publication number 20230067948
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE COUPLED FIELD EFFECT RECTIFIER DIODE AND METHOD OF MAKING
- Publication number 20220393022
- Publication date Dec 8, 2022
- STMicroelectronics Pte Ltd
- Shin Phay LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220293775
- Publication date Sep 15, 2022
- Fuji Electric Co., Ltd.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
- Publication number 20220271172
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Tunneling Field-Effect Transistor Cell and Fabricating the...
- Publication number 20210296471
- Publication date Sep 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hay-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...
- Publication number 20210119025
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE STORAGE AND SENSING DEVICES AND METHODS
- Publication number 20210119026
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20210057415
- Publication date Feb 25, 2021
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDO SCHOTTKY DIODE
- Publication number 20210028301
- Publication date Jan 28, 2021
- NEXPERIA B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNELING FINFET
- Publication number 20200295187
- Publication date Sep 17, 2020
- STMicroelectronics, Inc.
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE STORAGE AND SENSING DEVICES AND METHODS
- Publication number 20200243672
- Publication date Jul 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- G11 - INFORMATION STORAGE
Information Patent Application
FIN TUNNELING FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20200194315
- Publication date Jun 18, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE CONNECTED VERTICAL TRANSISTOR
- Publication number 20200152624
- Publication date May 14, 2020
- International Business Machines Corporation
- Karthik Balakrishnan
- G11 - INFORMATION STORAGE
Information Patent Application
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...
- Publication number 20200098900
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE STORAGE AND SENSING DEVICES AND METHODS
- Publication number 20200098901
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CONTROLLED RECTIFIER (SCR) BASED ESD PROTECTION DEVICE
- Publication number 20200083213
- Publication date Mar 12, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Wei GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20200075749
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED DIODE HAVING FINGERS WITH ELEVATED GATES
- Publication number 20200075751
- Publication date Mar 5, 2020
- NXP B.V.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWIN GATE TUNNEL FIELD-EFFECT TRANSISTOR (FET)
- Publication number 20200058775
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Karthik Balakrishnan
- B82 - NANO-TECHNOLOGY
Information Patent Application
SILICON-CONTROLLED RECTIFIER STRUCTURE AND MANUFACTURING METHOD THE...
- Publication number 20200058637
- Publication date Feb 20, 2020
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Tianzhi ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL FIELD-EFFECT TRANSISTOR
- Publication number 20200044026
- Publication date Feb 6, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Poren TANG
- H01 - BASIC ELECTRIC ELEMENTS

Gated diodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gated metal-insulator-semiconductor (MIS) tunnel diode having negat...

Power semiconductor device with reduced loss and manufacturing meth...

Formation of semiconductor arrangement comprising semiconductor column

Vertical tunneling field-effect transistor cell

Semiconductor device and manufacturing method thereof

Diode structures with one or more raised terminals

Transistors including source/drain employing double-charge dopants

Gated metal-insulator-semiconductor (MIS) tunnel diode having negat...

Twin gate tunnel field-effect transistor (FET)

Vertical tunneling FinFET

Charge storage and sensing devices and methods

Diode connected vertical transistor

Semiconductor device and manufacturing method thereof

Semiconductor arrangement comprising buffer layer and semiconductor...

Pseudo Schottky diode

Semiconductor diodes employing back-side semiconductor or metal

Field-effect-transistors

Tunneling field-effect transistor and method for manufacturing tunn...

Thyristor volatile random access memory and methods of manufacture

Transistors with metal source and drain contacts including a Heusle...

Nanosheet gated diode

Precise junction placement in vertical semiconductor devices using...

Hybrid finfet structure with bulk source/drain regions

Vertical tunneling field-effect transistor cell and fabricating the...

Low-defect graphene-based devices and interconnects

Twin gate field effect diode

Biological sensing system

Method for fabricating tunneling field effect transistor having int...

Vertical tunnel field effect transistor (FET)

Gated metal-insulator-semiconductor (MIS) tunnel diode having negat...

Patents Applicationslast 30 patents

GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...

SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF

Tunneling Field Effect Transistor and Manufacturing Method Thereof,...

SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR ELEMENT, SEMICONDUCTOR INTEGRATED CIRCUIT, AND PRODUC...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...

POWER SEMICONDUCTOR DEVICE WITH REDUCED LOSS AND MANUFACTURING METH...

DIODE STRUCTURES WITH ONE OR MORE RAISED TERMINALS

CHARGE COUPLED FIELD EFFECT RECTIFIER DIODE AND METHOD OF MAKING

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF

Vertical Tunneling Field-Effect Transistor Cell and Fabricating the...

GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...

CHARGE STORAGE AND SENSING DEVICES AND METHODS

Thyristor Volatile Random Access Memory and Methods of Manufacture

PSEUDO SCHOTTKY DIODE

VERTICAL TUNNELING FINFET

CHARGE STORAGE AND SENSING DEVICES AND METHODS

FIN TUNNELING FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

DIODE CONNECTED VERTICAL TRANSISTOR

GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...

CHARGE STORAGE AND SENSING DEVICES AND METHODS

SILICON CONTROLLED RECTIFIER (SCR) BASED ESD PROTECTION DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

GATED DIODE HAVING FINGERS WITH ELEVATED GATES

TWIN GATE TUNNEL FIELD-EFFECT TRANSISTOR (FET)

SILICON-CONTROLLED RECTIFIER STRUCTURE AND MANUFACTURING METHOD THE...

TUNNEL FIELD-EFFECT TRANSISTOR