Ge germanium

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CPC
Y10S148/058

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/058Ge germanium

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Patents Grantslast 30 patents

Information Patent Grant
Hydride compounds with silicon and germanium core atoms and method...
- Patent number 8,568,681
- Issue date Oct 29, 2013
- Arizona Board of Regents, a Body Corporate of the State of Arizona acting for...
- John Kouvetakis
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Hydride compounds with silicon and germanium core atoms and method...
- Patent number 7,981,392
- Issue date Jul 19, 2011
- The Arizona Board of Regents, a body corporate of the state of Arizona acting...
- John Kouvetakis
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for forming polysilicon/germanium thin films without german...
- Patent number 6,214,681
- Issue date Apr 10, 2001
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-low temperature Al fill for sub-0.25 .mu.m generation of ICs...
- Patent number 6,110,829
- Issue date Aug 29, 2000
- Advanced Micro Devices, Inc.
- Paul Raymond Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing Si-Ge base heterojunction bipolar device
- Patent number 5,846,867
- Issue date Dec 8, 1998
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the laminar joining of silicon semiconductor slices
- Patent number 5,693,574
- Issue date Dec 2, 1997
- Deutsche Aerospace AG
- Gunther Schuster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium implant for use with ultra-shallow junctions
- Patent number 5,401,674
- Issue date Mar 28, 1995
- Advanced Micro Devices
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of doped silicon-germanium alloy on semiconduc...
- Patent number 5,336,903
- Issue date Aug 9, 1994
- North Carolina State University at Raleigh
- Mehmet C. Ozturk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing lower contact resistance in MOS transistors
- Patent number 5,312,766
- Issue date May 17, 1994
- National Semiconductor Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing lower contact resistance in MOS transistor stru...
- Patent number 5,296,387
- Issue date Mar 22, 1994
- National Semiconductor Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing germanium particles precipitated in an aluminum/...
- Patent number 5,283,206
- Issue date Feb 1, 1994
- Sony Corporation
- Yukiyasu Sugano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of doped silion-germanium alloy on semiconduct...
- Patent number 5,242,847
- Issue date Sep 7, 1993
- North Carolina State University at Raleigh
- Mehmet C. Ozturk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnection having a germanium layer
- Patent number 5,227,333
- Issue date Jul 13, 1993
- International Business Machines Corporation
- Joseph F. Shepard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline germanium film on sapphire
- Patent number 5,205,871
- Issue date Apr 27, 1993
- The United States of America as represented by the Secretary of the Navy
- David J. Godbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of optically transparent electrically conduct...
- Patent number 5,173,443
- Issue date Dec 22, 1992
- Northrop Corporation
- V. Warren Biricik
- G02 - OPTICS
Information Patent Grant
Method of fabricating P-buried layers for PNP devices
- Patent number 5,137,838
- Issue date Aug 11, 1992
- National Semiconductor Corporation
- Amolak Ramde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming heat resistant ohmic electrode
- Patent number 5,091,338
- Issue date Feb 25, 1992
- Sumitomo Electric Industries, Ltd.
- Junichi Tsuchimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively depositing single elemental semiconductor ma...
- Patent number 5,037,775
- Issue date Aug 6, 1991
- MCNC
- Arnold Reisman
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Heat-resistant ohmic electrode
- Patent number 4,989,065
- Issue date Jan 29, 1991
- Sumitomo Electric Industries, Ltd.
- Junichi Tsuchimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin semiconductor membranes
- Patent number 4,952,446
- Issue date Aug 28, 1990
- Cornell Research Foundation, Inc.
- Kevin C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin semiconductor membranes
- Patent number 4,946,735
- Issue date Aug 7, 1990
- Cornell Research Foundation, Inc.
- Kevin C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a spatially periodic semiconductor layer struc...
- Patent number 4,843,028
- Issue date Jun 27, 1989
- Icentia Patent-Verwaltungs-GmbH
- Hans-Joest Herzog
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing by a combination of photolytic, pyrolytic...
- Patent number 4,843,030
- Issue date Jun 27, 1989
- Eaton Corporation
- J. Gary Eden
- C30 - CRYSTAL GROWTH
Information Patent Grant
Field enhanced tunnel oxide on treated substrates
- Patent number 4,806,202
- Issue date Feb 21, 1989
- Intel Corporation
- Daniel N. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing Si or Ge epitaxial film using fluorine oxidant
- Patent number 4,800,173
- Issue date Jan 24, 1989
- Canon Kabushiki Kaisha
- Masahiro Kanai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heterojunction bipolar transistor having a base region of germanium
- Patent number 4,716,445
- Issue date Dec 29, 1987
- NEC Corporation
- Jun'ichi Sone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium detector passivated with hydrogenated amorphous germanium
- Patent number 4,589,006
- Issue date May 13, 1986
- The United States of America as represented by the United States Department o...
- William L. Hansen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Hydride Compounds with Silicon and Germanium Core Atoms and method...
- Publication number 20120020864
- Publication date Jan 26, 2012
- Arizona State
- John Kouvetakis
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Hydride Compounds With Silicon And Germanium Core Atoms And Method...
- Publication number 20070297967
- Publication date Dec 27, 2007
- Arizona Board of Regents
- Jonh Kouvetakis
- C01 - INORGANIC CHEMISTRY

Ge germanium

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Hydride compounds with silicon and germanium core atoms and method...

Hydride compounds with silicon and germanium core atoms and method...

Process for forming polysilicon/germanium thin films without german...

Ultra-low temperature Al fill for sub-0.25 .mu.m generation of ICs...

Method of producing Si-Ge base heterojunction bipolar device

Process for the laminar joining of silicon semiconductor slices

Germanium implant for use with ultra-shallow junctions

Selective deposition of doped silicon-germanium alloy on semiconduc...

Method of providing lower contact resistance in MOS transistors

Method of providing lower contact resistance in MOS transistor stru...

Method of removing germanium particles precipitated in an aluminum/...

Selective deposition of doped silion-germanium alloy on semiconduct...

Local interconnection having a germanium layer

Monocrystalline germanium film on sapphire

Method of manufacture of optically transparent electrically conduct...

Method of fabricating P-buried layers for PNP devices

Process for forming heat resistant ohmic electrode

Method for selectively depositing single elemental semiconductor ma...

Heat-resistant ohmic electrode

Ultra-thin semiconductor membranes

Ultra-thin semiconductor membranes

Method for producing a spatially periodic semiconductor layer struc...

Semiconductor processing by a combination of photolytic, pyrolytic...

Field enhanced tunnel oxide on treated substrates

Process for preparing Si or Ge epitaxial film using fluorine oxidant

Heterojunction bipolar transistor having a base region of germanium

Germanium detector passivated with hydrogenated amorphous germanium

Patents Applicationslast 30 patents

Hydride Compounds with Silicon and Germanium Core Atoms and method...

Hydride Compounds With Silicon And Germanium Core Atoms And Method...