Germanium

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CPC
C30B29/08

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/08Germanium

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Patents Grantslast 30 patents

Information Patent Grant
Method for producing a substrate for an optical element
- Patent number 12,196,986
- Issue date Jan 14, 2025
- Carl Zeiss SMT GmbH
- Andreas Schmehl
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 11,946,157
- Issue date Apr 2, 2024
- ASM IP Holding B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,784,045
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
High-temperature forming device for imperfect single-crystal wafers...
- Patent number 11,753,742
- Issue date Sep 12, 2023
- Changsha University of Science & Technology
- Wei Xie
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate and method of manufacturing thereof
- Patent number 11,749,526
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-assisted single crystal transistors
- Patent number 11,721,766
- Issue date Aug 8, 2023
- Intel Corporation
- Van H. Le
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial layers in source/drain contacts and methods of forming th...
- Patent number 11,410,890
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating a monocrystalline structure
- Patent number 11,380,543
- Issue date Jul 5, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Pierre-Edouard Raynal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Metal-assisted single crystal transistors
- Patent number 11,322,620
- Issue date May 3, 2022
- Intel Corporation
- Van H. Le
- C30 - CRYSTAL GROWTH
Information Patent Grant
Porous wire-in-tube structures
- Patent number 11,309,538
- Issue date Apr 19, 2022
- UNIVERSITY OF TEHRAN
- Mehrnoosh Sadeghipari
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,251,042
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
Melt-growth of single-crystal alloy semiconductor structures and se...
- Patent number 11,198,951
- Issue date Dec 14, 2021
- University of Southampton
- Frederic Yannick Gardes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline germanium wafers, method for preparing the same, me...
- Patent number 11,127,867
- Issue date Sep 21, 2021
- Beijing Tongmei Xtal Technology Co., Ltd.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Architectures enabling back contact bottom electrodes for semicondu...
- Patent number 10,991,836
- Issue date Apr 27, 2021
- University of Houston System
- Venkat Selvamanickam
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth of crystalline material
- Patent number 10,961,639
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Soo Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for precleaning a substrate surface prior to e...
- Patent number 10,837,122
- Issue date Nov 17, 2020
- Applied Materials, Inc.
- Christopher S. Olsen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing crystal in recess and processing apparatus used t...
- Patent number 10,822,714
- Issue date Nov 3, 2020
- Tokyo Electron Limited
- Yoichiro Chiba
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of epitaxial gallium nitride material using a thermally matc...
- Patent number 10,655,243
- Issue date May 19, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a material having nanoelements
- Patent number 10,636,584
- Issue date Apr 28, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Olga Burchak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for maintaining contained volume of molten material from whi...
- Patent number 10,633,765
- Issue date Apr 28, 2020
- 1366 Technologies, Inc.
- Ralf Jonczyk
- C30 - CRYSTAL GROWTH
Information Patent Grant
Devices and methods for electrochemical liquid phase epitaxy
- Patent number 10,538,860
- Issue date Jan 21, 2020
- THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Stephen Maldonado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a substrate with reduced threading dislocat...
- Patent number 10,483,351
- Issue date Nov 19, 2019
- Nanyang Technological University
- Kwang Hong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline epitaxially aligned nanostructures and related methods
- Patent number 10,472,229
- Issue date Nov 12, 2019
- Cornell University—Cornell Center for Technology
- Ulrich Wiesner
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Controlled growth of nanoscale wires
- Patent number 10,435,817
- Issue date Oct 8, 2019
- President and Fellows of Harvard College
- Charles M. Lieber
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for precleaning a substrate surface prior to e...
- Patent number 10,428,441
- Issue date Oct 1, 2019
- Applied Materials, Inc.
- Christopher S. Olsen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for determining preferential deposition parameters for a thi...
- Patent number 10,354,870
- Issue date Jul 16, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Yann Bogumilowicz
- C30 - CRYSTAL GROWTH
Information Patent Grant
High-quality, single-crystalline silicon-germanium films
- Patent number 10,176,991
- Issue date Jan 8, 2019
- Wisconsin Alumni Research Foundation
- Max G. Lagally
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing germanium crystals
- Patent number 10,125,431
- Issue date Nov 13, 2018
- South Dakota Board of Regents
- Guojian Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Anisotropic deposition in nanoscale wires
- Patent number 10,049,871
- Issue date Aug 14, 2018
- President and Fellows of Harvard College
- Charles M. Lieber
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film forming method and film forming apparatus
- Patent number 9,966,256
- Issue date May 8, 2018
- Tokyo Electron Limited
- Satoshi Takagi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO E...
- Publication number 20240301584
- Publication date Sep 12, 2024
- Applied Materials, Inc.
- Christopher S. OLSEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CONTROLLING LAYER-TO-LAYER THICKNESS IN MULTI-TIER EPITA...
- Publication number 20240247405
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Alexandros ANASTASOPOULOS
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OP...
- Publication number 20240093403
- Publication date Mar 21, 2024
- Mohammad Reza AZIZIYAN
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20240030027
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING...
- Publication number 20240011193
- Publication date Jan 11, 2024
- Socpra Sciences et Genie s.e.c.
- Youcef Ataellah BIOUD
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
APPARATUS AND METHOD FOR MANUFACTURING HEXAGONAL CRYSTALS
- Publication number 20230272549
- Publication date Aug 31, 2023
- LNBS Co, Ltd.
- Hyung Soo AHN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EPITAXIAL REACTOR SYSTEMS AND METHODS OF USING SAME
- Publication number 20230203706
- Publication date Jun 29, 2023
- ASM IP HOLDING B.V.
- Alexandros Demos
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE DOPED GERMANIUM MONOCRYSTALS AND WAFERS DERIVED THEREFROM
- Publication number 20230170391
- Publication date Jun 1, 2023
- Umicore
- Johannes VANPAEMEL
- C30 - CRYSTAL GROWTH
Information Patent Application
NANOWIRES NETWORK
- Publication number 20220389614
- Publication date Dec 8, 2022
- Fundación IMDEA Materiales
- Juan José Vilatela García
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20220367174
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUM LAYERS
- Publication number 20220364262
- Publication date Nov 17, 2022
- ASM IP HOLDING B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial Layers In Source/Drain Contacts And Methods Of Forming Th...
- Publication number 20220359310
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- C30 - CRYSTAL GROWTH
Information Patent Application
GERMANIUM SINGLE-CRYSTAL WAFER, METHOD FOR PREPARING GERMANIUM SING...
- Publication number 20220238746
- Publication date Jul 28, 2022
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Rajaram SHETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-ASSISTED SINGLE CRYSTAL TRANSISTORS
- Publication number 20220216347
- Publication date Jul 7, 2022
- Intel Corporation
- Van H. LE
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH-TEMPERATURE FORMING DEVICE FOR IMPERFECT SINGLE-CRYSTAL WAFERS...
- Publication number 20220162770
- Publication date May 26, 2022
- Changsha University of Science & Technology
- Wei XIE
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20220130669
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH PURITY GERMANIUM DETECTOR
- Publication number 20210223416
- Publication date Jul 22, 2021
- TSINGHUA UNIVERSITY
- Yulan LI
- G01 - MEASURING TESTING
Information Patent Application
Monocrystalline Germanium Wafers, Method for Preparing the Same, Me...
- Publication number 20210175377
- Publication date Jun 10, 2021
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Rajaram SHETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20210134594
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SUBSTRATE FOR AN OPTICAL ELEMENT, AND REFLEC...
- Publication number 20210072435
- Publication date Mar 11, 2021
- Carl Zeiss SMT GMBH
- Andreas SCHMEHL
- G02 - OPTICS
Information Patent Application
METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO E...
- Publication number 20210010160
- Publication date Jan 14, 2021
- Applied Materials, Inc.
- Christopher S. OLSEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METAL-ASSISTED SINGLE CRYSTAL TRANSISTORS
- Publication number 20200287053
- Publication date Sep 10, 2020
- Intel Corporation
- Van H. LE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FABRICATING A MONOCRYSTALLINE STRUCTURE
- Publication number 20200194259
- Publication date Jun 18, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Pierre-Edouard RAYNAL
- C30 - CRYSTAL GROWTH
Information Patent Application
STRETCHABLE CRYSTALLINE SEMICONDUCTOR NANOWIRE AND PREPARATION METH...
- Publication number 20200118818
- Publication date Apr 16, 2020
- NANJING UNIVERSITY
- Linwei YU
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Structures Which Include Laminates of First and Secon...
- Publication number 20200066516
- Publication date Feb 27, 2020
- Micron Technology, Inc.
- Manuj Nahar
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial Layers in Source/Drain Contacts and Methods of Forming th...
- Publication number 20200006159
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Ding-Kang Shih
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO E...
- Publication number 20190382917
- Publication date Dec 19, 2019
- Applied Materials, Inc.
- Christopher S. OLSEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR FORMING SILICON FILM, GERMANIUM FILM, OR S...
- Publication number 20190267236
- Publication date Aug 29, 2019
- TOKYO ELECTRON LIMITED
- Satoshi TAKAGI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH-QUALITY, SINGLE-CRYSTALLINE SILICON-GERMANIUM FILMS
- Publication number 20190013200
- Publication date Jan 10, 2019
- Wisconsin Alumni Research Foundation
- Max G. Lagally
- C30 - CRYSTAL GROWTH
Information Patent Application
A Nanowire Heterostructure
- Publication number 20180175371
- Publication date Jun 21, 2018
- University of Limerick
- Kevin M. Ryan
- C30 - CRYSTAL GROWTH

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing a substrate for an optical element

Method for depositing boron containing silicon germanium layers

Formation of single crystal semiconductors using planar vapor liqui...

High-temperature forming device for imperfect single-crystal wafers...

Semiconductor substrate and method of manufacturing thereof

Metal-assisted single crystal transistors

Epitaxial layers in source/drain contacts and methods of forming th...

Method for fabricating a monocrystalline structure

Metal-assisted single crystal transistors

Porous wire-in-tube structures

Formation of single crystal semiconductors using planar vapor liqui...

Melt-growth of single-crystal alloy semiconductor structures and se...

Monocrystalline germanium wafers, method for preparing the same, me...

Architectures enabling back contact bottom electrodes for semicondu...

Epitaxial growth of crystalline material

Method and apparatus for precleaning a substrate surface prior to e...

Method of growing crystal in recess and processing apparatus used t...

Growth of epitaxial gallium nitride material using a thermally matc...

Method for manufacturing a material having nanoelements

Method for maintaining contained volume of molten material from whi...

Devices and methods for electrochemical liquid phase epitaxy

Method of manufacturing a substrate with reduced threading dislocat...

Monocrystalline epitaxially aligned nanostructures and related methods

Controlled growth of nanoscale wires

Method and apparatus for precleaning a substrate surface prior to e...

Method for determining preferential deposition parameters for a thi...

High-quality, single-crystalline silicon-germanium films

Method of growing germanium crystals

Anisotropic deposition in nanoscale wires

Film forming method and film forming apparatus

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO E...

METHOD FOR CONTROLLING LAYER-TO-LAYER THICKNESS IN MULTI-TIER EPITA...

METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OP...

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING...

APPARATUS AND METHOD FOR MANUFACTURING HEXAGONAL CRYSTALS

EPITAXIAL REACTOR SYSTEMS AND METHODS OF USING SAME

N-TYPE DOPED GERMANIUM MONOCRYSTALS AND WAFERS DERIVED THEREFROM

NANOWIRES NETWORK

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUM LAYERS

Epitaxial Layers In Source/Drain Contacts And Methods Of Forming Th...

GERMANIUM SINGLE-CRYSTAL WAFER, METHOD FOR PREPARING GERMANIUM SING...

METAL-ASSISTED SINGLE CRYSTAL TRANSISTORS

HIGH-TEMPERATURE FORMING DEVICE FOR IMPERFECT SINGLE-CRYSTAL WAFERS...

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

HIGH PURITY GERMANIUM DETECTOR

Monocrystalline Germanium Wafers, Method for Preparing the Same, Me...

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

METHOD FOR PRODUCING A SUBSTRATE FOR AN OPTICAL ELEMENT, AND REFLEC...

METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO E...

METAL-ASSISTED SINGLE CRYSTAL TRANSISTORS

METHOD FOR FABRICATING A MONOCRYSTALLINE STRUCTURE

STRETCHABLE CRYSTALLINE SEMICONDUCTOR NANOWIRE AND PREPARATION METH...

Semiconductor Structures Which Include Laminates of First and Secon...

Epitaxial Layers in Source/Drain Contacts and Methods of Forming th...

METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO E...

METHOD AND APPARATUS FOR FORMING SILICON FILM, GERMANIUM FILM, OR S...

HIGH-QUALITY, SINGLE-CRYSTALLINE SILICON-GERMANIUM FILMS

A Nanowire Heterostructure