Group 12/16 materials

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H01L21/024

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/024Group 12/16 materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Composite substrate, composite substrate preparation method, semico...
- Patent number 12,369,373
- Issue date Jul 22, 2025
- Huawei Technologies Co., Ltd.
- Bo Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photovoltaic devices and method of making
- Patent number 12,369,426
- Issue date Jul 22, 2025
- First Solar, Inc.
- Holly Ann Blaydes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nano-metal connections for a solar cell array
- Patent number 12,369,409
- Issue date Jul 22, 2025
- The Boeing Company
- Eric Rehder
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Integration of compound-semiconductor-based devices and silicon-bas...
- Patent number 12,362,172
- Issue date Jul 15, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded superlattice structure for gate all around devices
- Patent number 12,363,971
- Issue date Jul 15, 2025
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Near-infrared light emitting semiconductor element and method for m...
- Patent number 12,364,058
- Issue date Jul 15, 2025
- The Ritsumeikan Trust
- Shuhei Ichikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,364,059
- Issue date Jul 15, 2025
- ALLOS SEMICONDUCTORS GMBH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC wafer and manufacturing method thereof
- Patent number 12,363,973
- Issue date Jul 15, 2025
- PROTERIAL, LTD.
- Keisuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,351,941
- Issue date Jul 8, 2025
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor film
- Patent number 12,351,906
- Issue date Jul 8, 2025
- NGK Insulators, Ltd.
- Jun Yoshikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fin height and STI depth for performance improvement in semiconduct...
- Patent number 12,356,710
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Separate epitaxy layers for nanowire stack GAA device
- Patent number 12,356,667
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N heteroepitaxial devices on rock salt substrates
- Patent number 12,344,958
- Issue date Jul 1, 2025
- Alliance for Sustainable Energy, LLC
- Marshall Brooks Tellekamp
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 12,349,460
- Issue date Jul 1, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Masashi Oota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device that comprises an HEMT and an HHMT with a back...
- Patent number 12,349,387
- Issue date Jul 1, 2025
- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate
- Patent number 12,342,589
- Issue date Jun 24, 2025
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-type SNS thin film, photoelectric conversion element, solar cell,...
- Patent number 12,342,655
- Issue date Jun 24, 2025
- Tohoku University
- Issei Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrates for III-nitride epitaxy
- Patent number 12,331,426
- Issue date Jun 17, 2025
- X-FAB SEMICONDUCTOR FOUNDRIES GMBH
- Victor Sizov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer, semiconductor device, and method for manufacturing...
- Patent number 12,334,340
- Issue date Jun 17, 2025
- Mitsubishi Electric Corporation
- Atsushi Era
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride (GaN) integrated circuit technology
- Patent number 12,336,268
- Issue date Jun 17, 2025
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal semiconductor structure and method of fabricating th...
- Patent number 12,336,247
- Issue date Jun 17, 2025
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and methods of manufacturing the same
- Patent number 12,328,937
- Issue date Jun 10, 2025
- Samsung Electronics Co., Ltd.
- Jaemun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing device for SiC semiconductor substrate
- Patent number 12,325,930
- Issue date Jun 10, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a layer of textured aluminum nitride
- Patent number 12,329,032
- Issue date Jun 10, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Stéphane Cadot
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for CVD deposition of n-type doped silicon carbide and epita...
- Patent number 12,325,932
- Issue date Jun 10, 2025
- LPE S.P.A.
- Silvio Preti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride substrate manufacturing method, aluminum nitride s...
- Patent number 12,325,936
- Issue date Jun 10, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Low voltage laser diodes on {20-21} gallium and nitrogen containing...
- Patent number 12,327,984
- Issue date Jun 10, 2025
- KYOCERA SLD Laser, Inc.
- James W. Raring
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of using sic container
- Patent number 12,320,030
- Issue date Jun 3, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide transistor
- Patent number 12,324,276
- Issue date Jun 3, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal material for air gaps in semiconductor devices
- Patent number 12,324,200
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shuen-Shin Liang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING COMPOUND SEMICOND...
- Publication number 20250241018
- Publication date Jul 24, 2025
- ATOMERA INCORPORATED
- JERRY WAYNE JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING COMPOUND SEMICOND...
- Publication number 20250239447
- Publication date Jul 24, 2025
- ATOMERA INCORPORATED
- JERRY WAYNE JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH GROUP III-N AND SILICO...
- Publication number 20250239448
- Publication date Jul 24, 2025
- ATOMERA INCORPORATED
- JERRY WAYNE JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20250241089
- Publication date Jul 24, 2025
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR SUBS...
- Publication number 20250234646
- Publication date Jul 17, 2025
- Intel Corporation
- Chung-Hsun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE FOR ELECTRONIC DEVICE
- Publication number 20250233031
- Publication date Jul 17, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20250226217
- Publication date Jul 10, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE STRIPPING METHOD AND EPITAXIAL WAFER
- Publication number 20250226209
- Publication date Jul 10, 2025
- HC SEMITEK (ZHEJIANG) CO., LTD.
- Hongpo HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER HAVING GAN INTERMEDIATE LAYERS FOR FORMING SEMI...
- Publication number 20250226215
- Publication date Jul 10, 2025
- ALLOS Semiconductor GmbH
- Atsushi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATED STRUCTURE, METHOD FOR MANUFACTURING LAMINATED STRUCTURE,...
- Publication number 20250220999
- Publication date Jul 3, 2025
- Japan Display Inc.
- Hayata AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNED MOLD UNDERFILL (MUF) FILMS FOR DEEP TRENCH FILLING
- Publication number 20250218885
- Publication date Jul 3, 2025
- Intel Corporation
- Hong Seung YEON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20250218771
- Publication date Jul 3, 2025
- Sumitomo Electric Industries, Ltd.
- Hideyuki HISANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
ENGINEERED SUBSTRATE WITH A MULTI-BARRIER LAYER STRUCTURE
- Publication number 20250210348
- Publication date Jun 26, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20250210416
- Publication date Jun 26, 2025
- Kabushiki Kaisha Toshiba
- Etsuo HAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF...
- Publication number 20250201636
- Publication date Jun 19, 2025
- NGK Insulators, Ltd.
- Yoshitaka KURAOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE DEVICE REGIONS AND METHOD OF FAB...
- Publication number 20250203987
- Publication date Jun 19, 2025
- NXP USA, Inc.
- Jianwei Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FINFET WITH MERGED EXPITAXIAL SOURCE/DRAI...
- Publication number 20250203917
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADVANCED ELECTRONIC DEVICE STRUCTURES USING SEMICONDUCTOR STRUCTURE...
- Publication number 20250204091
- Publication date Jun 19, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GROUP 3 NITRIDE SEMICONDUCTOR TEMPLATE USI...
- Publication number 20250203899
- Publication date Jun 19, 2025
- WAVELORD CO., LTD
- Juneo SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER STRUCTURE, METHOD FOR PRODUCING MULTILAYER STRUCTURE AND...
- Publication number 20250201554
- Publication date Jun 19, 2025
- Japan Display Inc.
- Hayata AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASSEMBLY AND METHOD FOR PREVENTING WARPAGE IN A SEMICONDUCTOR PACKAGE
- Publication number 20250201605
- Publication date Jun 19, 2025
- Intel Corporation
- Sonja Koller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR, INCLUDING MULTI-PORTION NITRIDE REGION
- Publication number 20250203983
- Publication date Jun 19, 2025
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPONENT FOR FABRICATING A SEMICONDUCTOR, HAVING PLURALITY OF LAYE...
- Publication number 20250188603
- Publication date Jun 12, 2025
- TOKAI CARBON KOREA CO., LTD.
- JOUNG IL KIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MULTILAYERED STRUCTURE, SEMICONDUCTOR DEVICE, AND MANUFACTURING MET...
- Publication number 20250191914
- Publication date Jun 12, 2025
- Japan Display Inc.
- Hayata AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED LAYER FOR FERROELECTRIC MEMORY DEVICE AND MANUFACTURING METHOD...
- Publication number 20250191912
- Publication date Jun 12, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-CHIEH LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250191913
- Publication date Jun 12, 2025
- Japan Display Inc.
- Hayata AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Semiconductor Device Fabrication Involving Porous Silico...
- Publication number 20250194125
- Publication date Jun 12, 2025
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED STRUCTURE, MANUFACTURING METHOD THEREOF, AND SEMICONDU...
- Publication number 20250194195
- Publication date Jun 12, 2025
- Japan Display Inc.
- Hayata AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARSENIC DIFFUSION PROFILE ENGINEERING FOR TRANSISTORS
- Publication number 20250194193
- Publication date Jun 12, 2025
- Applied Materials, Inc.
- Patricia M. LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE PLATFORMS AND THE MANUFACTURE THEREOF THROUGH SILIC...
- Publication number 20250179685
- Publication date Jun 5, 2025
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP.
- Sagi Varghese Mathai
- C30 - CRYSTAL GROWTH

Group 12/16 materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Composite substrate, composite substrate preparation method, semico...

Photovoltaic devices and method of making

Nano-metal connections for a solar cell array

Integration of compound-semiconductor-based devices and silicon-bas...

Graded superlattice structure for gate all around devices

Near-infrared light emitting semiconductor element and method for m...

Nitride semiconductor component and process for its production

SiC wafer and manufacturing method thereof

Ground substrate and method for producing same

Semiconductor film

Fin height and STI depth for performance improvement in semiconduct...

Separate epitaxy layers for nanowire stack GAA device

III-N heteroepitaxial devices on rock salt substrates

Manufacturing method of semiconductor device

Semiconductor device that comprises an HEMT and an HHMT with a back...

Semiconductor substrate

N-type SNS thin film, photoelectric conversion element, solar cell,...

Substrates for III-nitride epitaxy

Epitaxial wafer, semiconductor device, and method for manufacturing...

Gallium nitride (GaN) integrated circuit technology

Single crystal semiconductor structure and method of fabricating th...

Integrated circuit devices and methods of manufacturing the same

Manufacturing device for SiC semiconductor substrate

Method for manufacturing a layer of textured aluminum nitride

Method for CVD deposition of n-type doped silicon carbide and epita...

Aluminum nitride substrate manufacturing method, aluminum nitride s...

Low voltage laser diodes on {20-21} gallium and nitrogen containing...

Method of using sic container

Epitaxial oxide transistor

Seal material for air gaps in semiconductor devices

Patents Applicationslast 30 patents

METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING COMPOUND SEMICOND...

METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING COMPOUND SEMICOND...

METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH GROUP III-N AND SILICO...

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR SUBS...

SUBSTRATE FOR ELECTRONIC DEVICE

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

SUBSTRATE STRIPPING METHOD AND EPITAXIAL WAFER

SEMICONDUCTOR WAFER HAVING GAN INTERMEDIATE LAYERS FOR FORMING SEMI...

LAMINATED STRUCTURE, METHOD FOR MANUFACTURING LAMINATED STRUCTURE,...

PATTERNED MOLD UNDERFILL (MUF) FILMS FOR DEEP TRENCH FILLING

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

ENGINEERED SUBSTRATE WITH A MULTI-BARRIER LAYER STRUCTURE

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF...

SEMICONDUCTOR DEVICE WITH MULTIPLE DEVICE REGIONS AND METHOD OF FAB...

METHOD OF MANUFACTURING A FINFET WITH MERGED EXPITAXIAL SOURCE/DRAI...

ADVANCED ELECTRONIC DEVICE STRUCTURES USING SEMICONDUCTOR STRUCTURE...

METHOD FOR MANUFACTURING GROUP 3 NITRIDE SEMICONDUCTOR TEMPLATE USI...

MULTILAYER STRUCTURE, METHOD FOR PRODUCING MULTILAYER STRUCTURE AND...

ASSEMBLY AND METHOD FOR PREVENTING WARPAGE IN A SEMICONDUCTOR PACKAGE

NITRIDE SEMICONDUCTOR, INCLUDING MULTI-PORTION NITRIDE REGION

COMPONENT FOR FABRICATING A SEMICONDUCTOR, HAVING PLURALITY OF LAYE...

MULTILAYERED STRUCTURE, SEMICONDUCTOR DEVICE, AND MANUFACTURING MET...

SEED LAYER FOR FERROELECTRIC MEMORY DEVICE AND MANUFACTURING METHOD...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Methods of Semiconductor Device Fabrication Involving Porous Silico...

MULTILAYERED STRUCTURE, MANUFACTURING METHOD THEREOF, AND SEMICONDU...

ARSENIC DIFFUSION PROFILE ENGINEERING FOR TRANSISTORS

SILICON CARBIDE PLATFORMS AND THE MANUFACTURE THEREOF THROUGH SILIC...