Group 13/15 materials

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H01L21/02538

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02538Group 13/15 materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having trench structure in which propagation o...
- Patent number 12,211,899
- Issue date Jan 28, 2025
- Korea Institute of Science and Technology
- Hyung-jun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional semiconductor based printable optoelectronic inks,...
- Patent number 12,183,574
- Issue date Dec 31, 2024
- Northwestern University
- Mark C. Hersam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Buffer layer structure to improve gan semiconductors
- Patent number 12,119,382
- Issue date Oct 15, 2024
- GlobalWafers Co., Ltd.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device using a patterned d...
- Patent number 12,057,311
- Issue date Aug 6, 2024
- Osram Opto Semiconductors GmbH
- Jens Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 12,046,471
- Issue date Jul 23, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for GAA I/O formation by selective epi regrowth
- Patent number 12,027,607
- Issue date Jul 2, 2024
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of III-V compounds to form V-NAND devices
- Patent number 11,956,977
- Issue date Apr 9, 2024
- ASM IP Holding B.V.
- Tom E. Blomberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous semiconductor device substrates with high quality epi...
- Patent number 11,908,922
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxy method
- Patent number 11,859,310
- Issue date Jan 2, 2024
- Azur Space Solar Power GmbH
- Clemens Waechter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Two-dimensional semiconductor based printable optoelectronic inks,...
- Patent number 11,830,735
- Issue date Nov 28, 2023
- Northwestern University
- Mark C. Hersam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Three-dimensional memory device including III-V compound semiconduc...
- Patent number 11,778,817
- Issue date Oct 3, 2023
- SanDisk Technologies LLC
- Ashish Kumar Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate and method of manufacturing thereof
- Patent number 11,749,526
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer structure to improve GaN semiconductors
- Patent number 11,705,489
- Issue date Jul 18, 2023
- GlobalWafers Co., Ltd.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a heterostructure comprising active or passi...
- Patent number 11,698,488
- Issue date Jul 11, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of manufacturing a conversion element, conversion element a...
- Patent number 11,692,133
- Issue date Jul 4, 2023
- Osram Opto Semiconductors GmbH
- Darshan Kundaliya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for obtaining information about layers deposited...
- Patent number 11,669,072
- Issue date Jun 6, 2023
- Aixtron SE
- Peter Sebald Lauffer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device
- Patent number 11,626,511
- Issue date Apr 11, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dry etching compound materials
- Patent number 11,605,542
- Issue date Mar 14, 2023
- Tokyo Electron Limited
- Peter Ventzek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxy method
- Patent number 11,598,022
- Issue date Mar 7, 2023
- Azur Space Solar Power GmbH
- Clemens Waechter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Synthesis and use of precursors for ALD of group VA element contain...
- Patent number 11,542,600
- Issue date Jan 3, 2023
- ASM IP Holding B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Channel layer formation for III-V metal-oxide-semiconductor field e...
- Patent number 11,508,577
- Issue date Nov 22, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor product comprising a heteroepitaxial layer grown on a...
- Patent number 11,456,370
- Issue date Sep 27, 2022
- UNM Rainforest Innovations
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for growing nanowires or nanopyramids on graphitic substrates
- Patent number 11,450,528
- Issue date Sep 20, 2022
- CRAYONANO AS
- Dong Chul Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20250015143
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANARIZATION OF ROUGH SURFACES
- Publication number 20240429049
- Publication date Dec 26, 2024
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Aaron Joseph PTAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL SEMICONDUCTOR BASED PRINTABLE OPTOELECTRONIC INKS,...
- Publication number 20240371635
- Publication date Nov 7, 2024
- Northwestern University
- Mark C. HERSAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20230378278
- Publication date Nov 23, 2023
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230352302
- Publication date Nov 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20230215924
- Publication date Jul 6, 2023
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230148397
- Publication date May 11, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...
- Publication number 20230139650
- Publication date May 4, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...
- Publication number 20230137113
- Publication date May 4, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230100277
- Publication date Mar 30, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230095501
- Publication date Mar 30, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20230093384
- Publication date Mar 23, 2023
- ASM IP HOLDING B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230090724
- Publication date Mar 23, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20220367174
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH
- Publication number 20220320318
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20220293768
- Publication date Sep 15, 2022
- UNM Rainforest Innovations
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20220285526
- Publication date Sep 8, 2022
- UNM Rainforest Innovations
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220173104
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan CHANG
- B82 - NANO-TECHNOLOGY
Information Patent Application
Process of Manufacturing a Conversion Element, Conversion Element a...
- Publication number 20220098478
- Publication date Mar 31, 2022
- Osram Opto Semiconductors GmbH
- Darshan Kundaliya
- C01 - INORGANIC CHEMISTRY
Information Patent Application
ATOMIC LAYER DEPOSITION OF III-V COMPOUNDS TO FORM V-NAND DEVICES
- Publication number 20220028870
- Publication date Jan 27, 2022
- ASM IP HOLDING B.V.
- Tom E. Blomberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING III-V COMPOUND SEMICONDUC...
- Publication number 20210408032
- Publication date Dec 30, 2021
- SANDISK TECHNOLOGIES LLC
- Ashish Kumar BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL SEMICONDUCTOR BASED PRINTABLE OPTOELECTRONIC INKS,...
- Publication number 20210398808
- Publication date Dec 23, 2021
- Northwestern University
- Mark C. HERSAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20210327875
- Publication date Oct 21, 2021
- Vanguard International Semiconductor Corporation
- Shin-Cheng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Dry Etching Compound Materials
- Publication number 20210296132
- Publication date Sep 23, 2021
- TOKYO ELECTRON LIMITED
- Peter Ventzek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VAPOR PHASE EPITAXY METHOD
- Publication number 20210193465
- Publication date Jun 24, 2021
- AZUR SPACE SOLAR POWER GMBH
- Clemens WAECHTER
- C30 - CRYSTAL GROWTH
Information Patent Application
VAPOR PHASE EPITAXY METHOD
- Publication number 20210189595
- Publication date Jun 24, 2021
- AZUR SPACE SOLAR POWER GMBH
- Clemens WAECHTER
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20210164101
- Publication date Jun 3, 2021
- ASM IP HOLDING B.V.
- Viljami Pore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH
- Publication number 20210119021
- Publication date Apr 22, 2021
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD FOR OBTAINING INFORMATION ABOUT LAYERS DEPOSITED...
- Publication number 20210072731
- Publication date Mar 11, 2021
- AIXTRON SE
- Peter Sebald LAUFFER
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HETEROGENEOUS SEMICONDUCTOR DEVICE SUBSTRATES WITH HIGH QUALITY EPI...
- Publication number 20210057547
- Publication date Feb 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Carlos H. DIAZ
- H01 - BASIC ELECTRIC ELEMENTS

Group 13/15 materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device having trench structure in which propagation o...

Two-dimensional semiconductor based printable optoelectronic inks,...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Buffer layer structure to improve gan semiconductors

Method for manufacturing a semiconductor device using a patterned d...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Methods for GAA I/O formation by selective epi regrowth

Atomic layer deposition of III-V compounds to form V-NAND devices

Heterogeneous semiconductor device substrates with high quality epi...

Vapor phase epitaxy method

Two-dimensional semiconductor based printable optoelectronic inks,...

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Three-dimensional memory device including III-V compound semiconduc...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Semiconductor substrate and method of manufacturing thereof

Buffer layer structure to improve GaN semiconductors

Method for fabricating a heterostructure comprising active or passi...

Process of manufacturing a conversion element, conversion element a...

Device and method for obtaining information about layers deposited...

Semiconductor device

Method for dry etching compound materials

Vapor phase epitaxy method

Synthesis and use of precursors for ALD of group VA element contain...

Channel layer formation for III-V metal-oxide-semiconductor field e...

Semiconductor product comprising a heteroepitaxial layer grown on a...

Process for growing nanowires or nanopyramids on graphitic substrates

Patents Applicationslast 30 patents

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

PLANARIZATION OF ROUGH SURFACES

TWO-DIMENSIONAL SEMICONDUCTOR BASED PRINTABLE OPTOELECTRONIC INKS,...

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

Optimized Heteroepitaxial Growth of Semiconductors

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

Optimized Heteroepitaxial Growth of Semiconductors

OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...

OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

Optimized Heteroepitaxial Growth of Semiconductors

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF

METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

SEMICONDUCTOR DEVICE

Process of Manufacturing a Conversion Element, Conversion Element a...

ATOMIC LAYER DEPOSITION OF III-V COMPOUNDS TO FORM V-NAND DEVICES

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING III-V COMPOUND SEMICONDUC...

TWO-DIMENSIONAL SEMICONDUCTOR BASED PRINTABLE OPTOELECTRONIC INKS,...

SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING THE SAME

Method for Dry Etching Compound Materials

VAPOR PHASE EPITAXY METHOD

VAPOR PHASE EPITAXY METHOD

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH

DEVICE AND METHOD FOR OBTAINING INFORMATION ABOUT LAYERS DEPOSITED...

HETEROGENEOUS SEMICONDUCTOR DEVICE SUBSTRATES WITH HIGH QUALITY EPI...