Group 13/15 materials

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H01L21/02387

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02387Group 13/15 materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 12,046,471
- Issue date Jul 23, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of forming SOI substrates
- Patent number 11,764,054
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Alex Usenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing diamond substrate
- Patent number 11,699,587
- Issue date Jul 11, 2023
- Korea Polytechnic University Industry Academic Cooperation Foundation
- Ok Hyun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for obtaining information about layers deposited...
- Patent number 11,669,072
- Issue date Jun 6, 2023
- Aixtron SE
- Peter Sebald Lauffer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a semiconductor device structure
- Patent number 11,282,702
- Issue date Mar 22, 2022
- Imec VZW
- Philippe Soussan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high-κ dielectric layer and method for...
- Patent number 11,201,055
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Hua Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for printing wide bandgap semiconductor materials
- Patent number 11,056,338
- Issue date Jul 6, 2021
- The Johns Hopkins University
- Jarod C. Gagnon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 10,910,222
- Issue date Feb 2, 2021
- Mitsubishi Electric Corporation
- Eiji Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor substrates
- Patent number 10,840,093
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Yannick Baumgartner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of forming SOI substrates
- Patent number 10,840,080
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Alex Usenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High percentage silicon germanium graded buffer layers with lattice...
- Patent number 10,741,387
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor stacked body, light-receiving element, and method for...
- Patent number 10,714,640
- Issue date Jul 14, 2020
- Sumitomo Electric Industries, Ltd.
- Takuma Fuyuki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optoelectronic device comprising three-dimensional semiconductor st...
- Patent number 10,403,787
- Issue date Sep 3, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Xin Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CVD silicon monolayer formation method and gate oxide ALD formation...
- Patent number 10,373,824
- Issue date Aug 6, 2019
- Applied Materials, Inc.
- Andrew C. Kummel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid multilayer device
- Patent number 10,366,883
- Issue date Jul 30, 2019
- Hewlett Packard Enterprise Development LP
- Di Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for formation of a transition metal dichalcogenide (TMDC) ma...
- Patent number 10,354,868
- Issue date Jul 16, 2019
- Imec VZW
- Salim El Kazzi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Heterogeneous integration of 3D SI and III-V vertical nanowire stru...
- Patent number 10,319,642
- Issue date Jun 11, 2019
- GLOBALFOUNDRIES Inc.
- Suraj Kumar Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of semiconductor materials
- Patent number 10,236,183
- Issue date Mar 19, 2019
- Imec VZW
- Amey Mahadev Walke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling field effect transistors and transistor circuitry employi...
- Patent number 9,941,117
- Issue date Apr 10, 2018
- OHIO STATE INNOVATION FOUNDATION
- Paul R. Berger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor lithography alignment feature with epitaxy blocker
- Patent number 9,922,936
- Issue date Mar 20, 2018
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor layered structure, method for producing semiconductor...
- Patent number 9,887,310
- Issue date Feb 6, 2018
- Sumitomo Electric Industries, Ltd
- Katsushi Akita
- C30 - CRYSTAL GROWTH
Information Patent Grant
CVD silicon monolayer formation method and gate oxide ALD formation...
- Patent number 9,824,889
- Issue date Nov 21, 2017
- Applied Materials, Inc.
- Andrew C. Kummel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonplanar III-N transistors with compositionally graded semiconduct...
- Patent number 9,806,203
- Issue date Oct 31, 2017
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PLANARIZATION OF ROUGH SURFACES
- Publication number 20240429049
- Publication date Dec 26, 2024
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Aaron Joseph PTAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SIC SUBSTRATE
- Publication number 20240332012
- Publication date Oct 3, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR
- Publication number 20240234556
- Publication date Jul 11, 2024
- HRL LABORATORIES, LLC
- Kyung-Ah SON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR
- Publication number 20240136429
- Publication date Apr 25, 2024
- HRL LABORATORIES, LLC
- Kyung-Ah SON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SOI SUBSTRATES
- Publication number 20230369038
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alex Usenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230352302
- Publication date Nov 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEED LAYER, A HETEROSTRUCTURE COMPRISING THE SEED LAYER AND A MET...
- Publication number 20230154747
- Publication date May 18, 2023
- National University of Singapore
- Barbaros OEZYILMAZ
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230148397
- Publication date May 11, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...
- Publication number 20230139650
- Publication date May 4, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...
- Publication number 20230137113
- Publication date May 4, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230100277
- Publication date Mar 30, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230095501
- Publication date Mar 30, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230090724
- Publication date Mar 23, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING DIAMOND SUBSTRATE
- Publication number 20220285154
- Publication date Sep 8, 2022
- KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
- Ok Hyun NAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20210111021
- Publication date Apr 15, 2021
- IMEC vzw
- Philippe SOUSSAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SOI SUBSTRATES
- Publication number 20210090876
- Publication date Mar 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alex Usenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD FOR OBTAINING INFORMATION ABOUT LAYERS DEPOSITED...
- Publication number 20210072731
- Publication date Mar 11, 2021
- AIXTRON SE
- Peter Sebald LAUFFER
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20200357642
- Publication date Nov 12, 2020
- Mitsubishi Electric Corporation
- Eiji NAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS
- Publication number 20200118816
- Publication date Apr 16, 2020
- The Johns Hopkins University
- Jarod C. Gagnon
- C30 - CRYSTAL GROWTH
Information Patent Application
Fabrication Of Semiconductor Substrates
- Publication number 20200083042
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Yannick Baumgartner
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF FORMING SOI SUBSTRATES
- Publication number 20190088466
- Publication date Mar 21, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Alex Usenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING HIGH-K DIELECTRIC LAYER AND METHOD FOR...
- Publication number 20180151356
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Hua FU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Formation of a Transition Metal Dichalcogenide (TMDC) Ma...
- Publication number 20180144935
- Publication date May 24, 2018
- IMEC vzw
- Salim El Kazzi
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Lithography Alignment Feature with Epitaxy Blocker
- Publication number 20180061772
- Publication date Mar 1, 2018
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CVD SILICON MONOLAYER FORMATION METHOD AND GATE OXIDE ALD FORMATION...
- Publication number 20180033610
- Publication date Feb 1, 2018
- Applied Materials, Inc.
- Andrew C. KUMMEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithic Integration of Semiconductor Materials
- Publication number 20180025911
- Publication date Jan 25, 2018
- IMEC vzw
- Amey Mahadev Walke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MULTILAYER DEVICE
- Publication number 20170213729
- Publication date Jul 27, 2017
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Di Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V TRANSISTOR DEVICE WITH DOPED BOTTOM BARRIER
- Publication number 20170179232
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION OF GERMANIUM OR GERMANIUM OXIDE
- Publication number 20170069490
- Publication date Mar 9, 2017
- Picosun Oy
- Wei-Min LI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL
- Publication number 20170058425
- Publication date Mar 2, 2017
- Toyoda Gosei Co., Ltd.
- Miki MORIYAMA
- C30 - CRYSTAL GROWTH

Group 13/15 materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Methods of forming SOI substrates

Optimized heteroepitaxial growth of semiconductors

Method for manufacturing diamond substrate

Device and method for obtaining information about layers deposited...

Method of forming a semiconductor device structure

Semiconductor device having high-κ dielectric layer and method for...

Method for printing wide bandgap semiconductor materials

Method for manufacturing semiconductor device

Fabrication of semiconductor substrates

Methods of forming SOI substrates

High percentage silicon germanium graded buffer layers with lattice...

Semiconductor stacked body, light-receiving element, and method for...

Optoelectronic device comprising three-dimensional semiconductor st...

CVD silicon monolayer formation method and gate oxide ALD formation...

Hybrid multilayer device

Method for formation of a transition metal dichalcogenide (TMDC) ma...

Heterogeneous integration of 3D SI and III-V vertical nanowire stru...

Monolithic integration of semiconductor materials

Tunneling field effect transistors and transistor circuitry employi...

Semiconductor lithography alignment feature with epitaxy blocker

Semiconductor layered structure, method for producing semiconductor...

CVD silicon monolayer formation method and gate oxide ALD formation...

Nonplanar III-N transistors with compositionally graded semiconduct...

Patents Applicationslast 30 patents

PLANARIZATION OF ROUGH SURFACES

METHOD FOR MANUFACTURING SIC SUBSTRATE

N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR

N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR

METHODS OF FORMING SOI SUBSTRATES

Optimized Heteroepitaxial Growth of Semiconductors

A SEED LAYER, A HETEROSTRUCTURE COMPRISING THE SEED LAYER AND A MET...

Optimized Heteroepitaxial Growth of Semiconductors

OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...

OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

METHOD FOR MANUFACTURING DIAMOND SUBSTRATE

METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE

METHODS OF FORMING SOI SUBSTRATES

DEVICE AND METHOD FOR OBTAINING INFORMATION ABOUT LAYERS DEPOSITED...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS

Fabrication Of Semiconductor Substrates

METHODS OF FORMING SOI SUBSTRATES

SEMICONDUCTOR DEVICE HAVING HIGH-K DIELECTRIC LAYER AND METHOD FOR...

Method for Formation of a Transition Metal Dichalcogenide (TMDC) Ma...

Semiconductor Lithography Alignment Feature with Epitaxy Blocker

CVD SILICON MONOLAYER FORMATION METHOD AND GATE OXIDE ALD FORMATION...

Monolithic Integration of Semiconductor Materials

HYBRID MULTILAYER DEVICE

III-V TRANSISTOR DEVICE WITH DOPED BOTTOM BARRIER

ATOMIC LAYER DEPOSITION OF GERMANIUM OR GERMANIUM OXIDE

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL