Group 14 semiconducting materials

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H01L21/02373

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02373Group 14 semiconducting materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Device and method for high pressure anneal
- Patent number 11,854,800
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer including boron and germanium and method of fabrica...
- Patent number 11,289,334
- Issue date Mar 29, 2022
- Samsung Electronics Co., Ltd.
- Jung-A Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for depositing III-V compositions on silicon
- Patent number 11,120,990
- Issue date Sep 14, 2021
- Alliance for Sustainable Energy, LLC
- Emily Lowell Warren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Providing a temporary protective layer on a graphene sheet
- Patent number 11,056,343
- Issue date Jul 6, 2021
- Cardea Bio, Inc.
- Deng Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for high pressure anneal
- Patent number 11,037,781
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked indium gallium arsenide nanosheets on silicon with bottom t...
- Patent number 10,748,990
- Issue date Aug 18, 2020
- International Business Machines Corporation
- Takashi Ando
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 10,741,443
- Issue date Aug 11, 2020
- Kioxia Corporation
- Masayuki Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a strained layer based on germanium-tin
- Patent number 10,699,902
- Issue date Jun 30, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Vincent Reboud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V compound semiconductor nanowire, field effect transisto...
- Patent number 10,403,498
- Issue date Sep 3, 2019
- NATIONAL UNIVERSITY CORPORATION HAKKAIDO UNIVERSITY
- Takashi Fukui
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 10,325,805
- Issue date Jun 18, 2019
- Kabushiki Kaisha Toshiba
- Masayuki Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor structures
- Patent number 10,256,092
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Daniele Caimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for heteroepitaxial growth of III metal-face polarity III-ni...
- Patent number 10,192,737
- Issue date Jan 29, 2019
- Foundation for Research and Technology
- Alexandros Georgakilas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,115,587
- Issue date Oct 30, 2018
- Fuji Electric Co., Ltd.
- Haruo Nakazawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistance layer for III-V channel deposited on group IV subst...
- Patent number 9,882,009
- Issue date Jan 30, 2018
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures having isolated graphene layers with a reduced dimension
- Patent number 9,768,026
- Issue date Sep 19, 2017
- Solan, LLC
- Mark Alan Davis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating III-nitride semiconductor dies
- Patent number 9,721,791
- Issue date Aug 1, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming strain-relaxed buffer layers
- Patent number 9,721,792
- Issue date Aug 1, 2017
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a graphene structure
- Patent number 9,716,227
- Issue date Jul 25, 2017
- Infineon Technologies AG
- Hans-Joachim Schulze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Optomechanical accelerometer
- Patent number 9,618,531
- Issue date Apr 11, 2017
- California Institute of Technology
- Oskar Painter
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Layer transferring process
- Patent number 9,583,341
- Issue date Feb 28, 2017
- Soitec
- Vivien Renauld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor HEMT device with stoichiomet...
- Patent number 9,514,930
- Issue date Dec 6, 2016
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing delamination and cracks in fabrication of group III-V de...
- Patent number 9,502,296
- Issue date Nov 22, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing delamination and cracks in group III-V wafers
- Patent number 9,490,172
- Issue date Nov 8, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating refined graphite-based structures and devic...
- Patent number 9,478,422
- Issue date Oct 25, 2016
- Solan, LLC
- Mark Alan Davis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal formation on non-lattice matched substrates
- Patent number 9,349,591
- Issue date May 24, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming low-defect strain-relaxed layers on lattice-mism...
- Patent number 9,343,303
- Issue date May 17, 2016
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor structure
- Patent number 9,337,265
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Stefan Abel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with aspect ratio trapping capabilities
- Patent number 9,330,908
- Issue date May 3, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of semiconductor memory device
- Patent number 9,305,775
- Issue date Apr 5, 2016
- SK Hynix Inc.
- Young Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming group III-V semiconductor materials on group IV...
- Patent number 9,275,861
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES Inc.
- Li Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND STRUCTURES FOR REDUCING DEFORMATIONS OF GALLIUM NITRIDE...
- Publication number 20240363342
- Publication date Oct 31, 2024
- ROBERT BOSCH GmbH
- BO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL
- Publication number 20230386832
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device and Method for High Pressure Anneal
- Publication number 20210280414
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING III-V COMPOSITIONS ON SILICON
- Publication number 20210020437
- Publication date Jan 21, 2021
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Emily Lowell WARREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20200243338
- Publication date Jul 30, 2020
- Samsung Electronics Co., Ltd.
- Jung-A LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A COBALT LAYER ON A SUBSTRATE
- Publication number 20200144056
- Publication date May 7, 2020
- Applied Materials, Inc.
- WEI LEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20190259659
- Publication date Aug 22, 2019
- Kabushiki Kaisha Toshiba
- Masayuki KITAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROVIDING A TEMPORARY PROTECTIVE LAYER ON A GRAPHENE SHEET
- Publication number 20170365477
- Publication date Dec 21, 2017
- Nanomedical Diagnostics, Inc.
- DENG PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20170229301
- Publication date Aug 10, 2017
- Masayuki Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V COMPOUND SEMICONDUCTOR NANOWIRE, FIELD EFFECT TRANSISTO...
- Publication number 20160284536
- Publication date Sep 29, 2016
- National University Corporation Hokkaido University
- Takashi FUKUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER TRANSFERRING PROCESS
- Publication number 20160163535
- Publication date Jun 9, 2016
- SOITEC
- Vivien Renauld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTANCE LAYER FOR III-V CHANNEL DEPOSITED ON GROUP IV SUBST...
- Publication number 20160163802
- Publication date Jun 9, 2016
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL FORMATION ON NON-LATTICE MATCHED SUBSTRATES
- Publication number 20160118248
- Publication date Apr 28, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Preventing Delamination and Cracks in Fabrication of Group III-V De...
- Publication number 20160079122
- Publication date Mar 17, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Preventing Delamination and Cracks in Group III-V Wafers
- Publication number 20160071768
- Publication date Mar 10, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE
- Publication number 20160064284
- Publication date Mar 3, 2016
- International Business Machines Corporation
- Daniele Caimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR HEMT DEVICE WITH STOICHIMETR...
- Publication number 20160049290
- Publication date Feb 18, 2016
- Fujitsu Limited
- Kozo MAKIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING LOW-DEFECT STRAIN-RELAXED LAYERS ON LATTICE-MISM...
- Publication number 20150270120
- Publication date Sep 24, 2015
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF FORMING
- Publication number 20150200134
- Publication date Jul 16, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Zhuo-Cang YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACCESS DEVICE, FABRICATION METHOD THEREOF, AND SEMICONDUCTOR MEMORY...
- Publication number 20150200088
- Publication date Jul 16, 2015
- SK hynix Inc.
- Young Ho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SUBSTRATE SUITABLE FOR USE WITH AN RF COMPONENT, AND AN RF...
- Publication number 20150170911
- Publication date Jun 18, 2015
- Analog Devices Technology
- Paul Martin Lambkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER
- Publication number 20150155165
- Publication date Jun 4, 2015
- Sumitomo Chemical Company, Limited
- Masahiko HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STRAIN-RELAXED BUFFER LAYERS
- Publication number 20150079803
- Publication date Mar 19, 2015
- Applied Materials, Inc.
- Yi-Chiau HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTOMECHANICAL ACCELEROMETER
- Publication number 20150020590
- Publication date Jan 22, 2015
- Oskar Painter
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
METHODS OF FORMING GROUP III-V SEMICONDUCTOR MATERIALS ON GROUP IV...
- Publication number 20150001587
- Publication date Jan 1, 2015
- GLOBALFOUNDRES Inc.
- Li Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ASPECT RATIO TRAPPING CAPABILITIES
- Publication number 20140374796
- Publication date Dec 25, 2014
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Delamination and Crack Prevention in III-Nitride Wafers
- Publication number 20140252375
- Publication date Sep 11, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, POWER SUPP...
- Publication number 20140197460
- Publication date Jul 17, 2014
- Fujitsu Limited
- Kozo MAKIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACCESS DEVICE, FABRICATION METHOD THEREOF, AND SEMICONDUCTOR MEMORY...
- Publication number 20140054532
- Publication date Feb 27, 2014
- SK HYNIX INC.
- Young Ho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130260540
- Publication date Oct 3, 2013
- Fuji Electric Co., Ltd.
- Haruo Nakazawa
- C30 - CRYSTAL GROWTH

Group 14 semiconducting materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Device and method for high pressure anneal

Epitaxial wafer including boron and germanium and method of fabrica...

Methods for depositing III-V compositions on silicon

Providing a temporary protective layer on a graphene sheet

Device and method for high pressure anneal

Stacked indium gallium arsenide nanosheets on silicon with bottom t...

Method for manufacturing a semiconductor device

Process for producing a strained layer based on germanium-tin

Group III-V compound semiconductor nanowire, field effect transisto...

Method for manufacturing a semiconductor device

Fabrication of semiconductor structures

Method for heteroepitaxial growth of III metal-face polarity III-ni...

Method of manufacturing semiconductor device

High resistance layer for III-V channel deposited on group IV subst...

Structures having isolated graphene layers with a reduced dimension

Method of fabricating III-nitride semiconductor dies

Method of forming strain-relaxed buffer layers

Method of forming a graphene structure

Optomechanical accelerometer

Layer transferring process

Method for manufacturing semiconductor HEMT device with stoichiomet...

Preventing delamination and cracks in fabrication of group III-V de...

Method for preventing delamination and cracks in group III-V wafers

Methods for fabricating refined graphite-based structures and devic...

Crystal formation on non-lattice matched substrates

Methods of forming low-defect strain-relaxed layers on lattice-mism...

Compound semiconductor structure

Semiconductor structure with aspect ratio trapping capabilities

Fabrication method of semiconductor memory device

Methods of forming group III-V semiconductor materials on group IV...

Patents Applicationslast 30 patents

METHODS AND STRUCTURES FOR REDUCING DEFORMATIONS OF GALLIUM NITRIDE...

DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL

Device and Method for High Pressure Anneal

METHODS FOR DEPOSITING III-V COMPOSITIONS ON SILICON

EPITAXIAL WAFER AND METHOD OF FABRICATING THE SAME

METHOD OF FORMING A COBALT LAYER ON A SUBSTRATE

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

PROVIDING A TEMPORARY PROTECTIVE LAYER ON A GRAPHENE SHEET

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

GROUP III-V COMPOUND SEMICONDUCTOR NANOWIRE, FIELD EFFECT TRANSISTO...

LAYER TRANSFERRING PROCESS

HIGH RESISTANCE LAYER FOR III-V CHANNEL DEPOSITED ON GROUP IV SUBST...

CRYSTAL FORMATION ON NON-LATTICE MATCHED SUBSTRATES

Preventing Delamination and Cracks in Fabrication of Group III-V De...

Method for Preventing Delamination and Cracks in Group III-V Wafers

METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE

METHOD FOR MANUFACTURING SEMICONDUCTOR HEMT DEVICE WITH STOICHIMETR...

METHODS OF FORMING LOW-DEFECT STRAIN-RELAXED LAYERS ON LATTICE-MISM...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF FORMING

ACCESS DEVICE, FABRICATION METHOD THEREOF, AND SEMICONDUCTOR MEMORY...

SILICON SUBSTRATE SUITABLE FOR USE WITH AN RF COMPONENT, AND AN RF...

METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER

METHOD OF FORMING STRAIN-RELAXED BUFFER LAYERS

OPTOMECHANICAL ACCELEROMETER

METHODS OF FORMING GROUP III-V SEMICONDUCTOR MATERIALS ON GROUP IV...

SEMICONDUCTOR STRUCTURE WITH ASPECT RATIO TRAPPING CAPABILITIES

Delamination and Crack Prevention in III-Nitride Wafers

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, POWER SUPP...

ACCESS DEVICE, FABRICATION METHOD THEREOF, AND SEMICONDUCTOR MEMORY...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE