Group 14 semiconducting materials

Industry

CPC
H01L21/02524

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02524Group 14 semiconducting materials

Industries

Patents Grantslast 30 patents

Information Patent Grant
Integrated CMOS source drain formation with advanced control
- Patent number 11,309,404
- Issue date Apr 19, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing doped group IV materials
- Patent number 11,031,241
- Issue date Jun 8, 2021
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including field effect transistors and method...
- Patent number 10,868,125
- Issue date Dec 15, 2020
- Samsung Electronics Co., Ltd.
- Mirco Cantoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer composite and method for producing a semiconductor component
- Patent number 10,784,145
- Issue date Sep 22, 2020
- Infineon Technologies AG
- Rudolf Berger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming transistors including group III-V material n...
- Patent number 10,749,032
- Issue date Aug 18, 2020
- Intel Corporation
- Chandra S. Mohapatra
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for producing a strained layer based on germanium-tin
- Patent number 10,699,902
- Issue date Jun 30, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Vincent Reboud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,644,154
- Issue date May 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-material mandrel for epitaxial crystal growth on silicon
- Patent number 10,615,178
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystallized silicon carbon replacement material for NMOS source/dr...
- Patent number 10,559,689
- Issue date Feb 11, 2020
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitter-based devices with lattice-mismatched semiconductor s...
- Patent number 10,468,551
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jizhong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including field effect transistors and method...
- Patent number 10,418,448
- Issue date Sep 17, 2019
- Samsung Electronics Co., Ltd.
- Mirco Cantoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible and stretchable sensors formed by patterned spalling
- Patent number 10,365,240
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Conductor including nano-patterned substrate and method of manufact...
- Patent number 10,312,100
- Issue date Jun 4, 2019
- Samsung Electronics Co., Ltd.
- Wonhee Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous substrates, articles, systems and compositions comprising na...
- Patent number 10,279,341
- Issue date May 7, 2019
- OneD Material LLC
- Chunming Niu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for removing crystal originated particles from a crystalline...
- Patent number 10,217,638
- Issue date Feb 26, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch method with surface modification treatment for forming semicon...
- Patent number 10,163,623
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Andrew Joseph Kelly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,115,823
- Issue date Oct 30, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-type semiconductor devices and methods of manufacturing th...
- Patent number 10,109,642
- Issue date Oct 23, 2018
- Samsung Electronics Co., Ltd.
- Yong-Hoon Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device including semiconductor...
- Patent number 10,056,483
- Issue date Aug 21, 2018
- Unisantis Electronics Singapore Pte. Ltd.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation method of semiconductor device structure with semiconduct...
- Patent number 10,043,665
- Issue date Aug 7, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar heterogeneous device
- Patent number 10,014,374
- Issue date Jul 3, 2018
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,002,963
- Issue date Jun 19, 2018
- Unisantis Electronics Singapore Pte. Ltd.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a carrier and an electronic component
- Patent number 9,934,966
- Issue date Apr 3, 2018
- Infineon Technologies AG
- Guenther Ruhl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained group IV channels
- Patent number 9,876,080
- Issue date Jan 23, 2018
- Imec VZW
- Bernardette Kunert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor device and semiconductor device
- Patent number 9,768,294
- Issue date Sep 19, 2017
- Unisantis Electronics Singapore Pte. Ltd.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-material mandrel for epitaxial crystal growth on silicon
- Patent number 9,754,969
- Issue date Sep 5, 2017
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming strain-relaxed buffer layers
- Patent number 9,721,792
- Issue date Aug 1, 2017
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,711,417
- Issue date Jul 18, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,711,416
- Issue date Jul 18, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing crystal originated particles from a crystalline...
- Patent number 9,679,774
- Issue date Jun 13, 2017
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20230349065
- Publication date Nov 2, 2023
- Kokusai Electric Corporation
- Takahiro MIYAKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
Integrated CMOS Source Drain Formation With Advanced Control
- Publication number 20220199804
- Publication date Jun 23, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GROWING DOPED GROUP IV MATERIALS
- Publication number 20200203149
- Publication date Jun 25, 2020
- Applied Materials, Inc.
- YI-CHIAU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated CMOS Source Drain Formation With Advanced Control
- Publication number 20200013878
- Publication date Jan 9, 2020
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS AND METHOD...
- Publication number 20190363163
- Publication date Nov 28, 2019
- Samsung Electronics Co., Ltd.
- Mirco Cantoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wafer Composite and Method for Producing a Semiconductor Component
- Publication number 20190244853
- Publication date Aug 8, 2019
- Rudolf Berger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON RESIDUE REMOVAL IN NANOSHEET TRANSISTORS
- Publication number 20190096669
- Publication date Mar 28, 2019
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20190067482
- Publication date Feb 28, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng CHING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING TRANSISTORS INCLUDING GROUP III-V MATERIAL N...
- Publication number 20190043993
- Publication date Feb 7, 2019
- Intel Corporation
- CHANDRA S. MOHAPATRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING TH...
- Publication number 20190035809
- Publication date Jan 31, 2019
- Samsung Electronics Co., Ltd.
- Yong-Hoon Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLIZED SILICON CARBON REPLACEMENT MATERIAL FOR NMOS SOURCE/DR...
- Publication number 20180374951
- Publication date Dec 27, 2018
- Intel Corporation
- KARTHIK JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE COMPRISING A 2-DIMENSIONAL MATERIAL
- Publication number 20180197951
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Pio Peter Niraj Nirmalraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH SEMICONDUCT...
- Publication number 20180151357
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND SYNTHESIS OF METAL OXIDE SURFACES AND INTERFACES WITH CR...
- Publication number 20180019122
- Publication date Jan 18, 2018
- University of Kentucky Research Foundation
- Beth S. Guiton
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
- Publication number 20170338339
- Publication date Nov 23, 2017
- Unisantis Electronics Singapore PTE LTD.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170338340
- Publication date Nov 23, 2017
- Unisantis Electronics Singapore PTE LTD.
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS AND METHOD...
- Publication number 20170243942
- Publication date Aug 24, 2017
- Samsung Electronics Co., Ltd.
- Mirco Cantoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Removing Crystal Originated Particles from a Crystallin...
- Publication number 20170236714
- Publication date Aug 17, 2017
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE SELECTIVE DEPOSITION EMPLOYING A GERMANIUM-CONTAINI...
- Publication number 20170194138
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Paul D. Brabant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20170162695
- Publication date Jun 8, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng CHING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTOR INCLUDING NANO-PATTERNED SUBSTRATE AND METHOD OF MANUFACT...
- Publication number 20170117399
- Publication date Apr 27, 2017
- Samsung Electronics Co., Ltd.
- Wonhee KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE COMPRISING A 2-DIMENSIONAL MATERIAL
- Publication number 20170110538
- Publication date Apr 20, 2017
- International Business Machines Corporation
- Pio Peter Niraj Nirmalraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING HIGHLY P-TYPE DOPED GERMANIUM TIN FILMS AND STRU...
- Publication number 20170047446
- Publication date Feb 16, 2017
- ASM IP HOLDING B.V.
- Joe Margetis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
- Publication number 20160322264
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING A CARRIER AND AN ELECTRONIC COMPONENT
- Publication number 20160307753
- Publication date Oct 20, 2016
- INFINEON TECHNOLOGIES AG
- Guenther Ruhl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR HETEROGENEOUS DEVICE
- Publication number 20160247882
- Publication date Aug 25, 2016
- Intel Corporation
- KIMIN JUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECTANGULAR NANOSHEET FABRICATION
- Publication number 20160071729
- Publication date Mar 10, 2016
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR PRE...
- Publication number 20160020333
- Publication date Jan 21, 2016
- BOE TECHNOLOGY GROUP CO., LTD.
- Tao Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanowires and Methods of Forming
- Publication number 20150325649
- Publication date Nov 12, 2015
- Brookhaven Science Associates, LLC
- Mingzhao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRUCTURE
- Publication number 20150303247
- Publication date Oct 22, 2015
- Alexandre Chibko
- H01 - BASIC ELECTRIC ELEMENTS

Group 14 semiconducting materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated CMOS source drain formation with advanced control

Method of growing doped group IV materials

Semiconductor devices including field effect transistors and method...

Wafer composite and method for producing a semiconductor component

Techniques for forming transistors including group III-V material n...

Process for producing a strained layer based on germanium-tin

Semiconductor device and manufacturing method thereof

Dual-material mandrel for epitaxial crystal growth on silicon

Crystallized silicon carbon replacement material for NMOS source/dr...

Light-emitter-based devices with lattice-mismatched semiconductor s...

Semiconductor devices including field effect transistors and method...

Flexible and stretchable sensors formed by patterned spalling

Conductor including nano-patterned substrate and method of manufact...

Porous substrates, articles, systems and compositions comprising na...

Method for removing crystal originated particles from a crystalline...

Etch method with surface modification treatment for forming semicon...

Semiconductor device and manufacturing method thereof

Vertical-type semiconductor devices and methods of manufacturing th...

Method for producing a semiconductor device including semiconductor...

Formation method of semiconductor device structure with semiconduct...

Planar heterogeneous device

Semiconductor device

Method for processing a carrier and an electronic component

Strained group IV channels

Method for producing semiconductor device and semiconductor device

Dual-material mandrel for epitaxial crystal growth on silicon

Method of forming strain-relaxed buffer layers

Fin field effect transistor including a strained epitaxial semicond...

Fin field effect transistor including a strained epitaxial semicond...

Method for removing crystal originated particles from a crystalline...

Patents Applicationslast 30 patents

SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...

Integrated CMOS Source Drain Formation With Advanced Control

METHOD OF GROWING DOPED GROUP IV MATERIALS

Integrated CMOS Source Drain Formation With Advanced Control

SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS AND METHOD...

Wafer Composite and Method for Producing a Semiconductor Component

SILICON RESIDUE REMOVAL IN NANOSHEET TRANSISTORS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TECHNIQUES FOR FORMING TRANSISTORS INCLUDING GROUP III-V MATERIAL N...

VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING TH...

CRYSTALLIZED SILICON CARBON REPLACEMENT MATERIAL FOR NMOS SOURCE/DR...

STRUCTURE COMPRISING A 2-DIMENSIONAL MATERIAL

FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH SEMICONDUCT...

DESIGN AND SYNTHESIS OF METAL OXIDE SURFACES AND INTERFACES WITH CR...

METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS AND METHOD...

Method for Removing Crystal Originated Particles from a Crystallin...

LOW TEMPERATURE SELECTIVE DEPOSITION EMPLOYING A GERMANIUM-CONTAINI...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CONDUCTOR INCLUDING NANO-PATTERNED SUBSTRATE AND METHOD OF MANUFACT...

STRUCTURE COMPRISING A 2-DIMENSIONAL MATERIAL

METHODS OF FORMING HIGHLY P-TYPE DOPED GERMANIUM TIN FILMS AND STRU...

FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...

METHOD FOR PROCESSING A CARRIER AND AN ELECTRONIC COMPONENT

PLANAR HETEROGENEOUS DEVICE

RECTANGULAR NANOSHEET FABRICATION

POLYSILICON THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR PRE...

Nanowires and Methods of Forming

METHOD FOR FABRICATING A STRUCTURE