group IV semiconductor

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H01L21/02236

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02236group IV semiconductor

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 12,261,220
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Woocheol Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-body self-aligned method of a vertical double diffused metal...
- Patent number 12,256,559
- Issue date Mar 18, 2025
- NATIONAL YANG MING CHIAO TUNG UNIVERSITY
- Bing-Yue Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal oxidation for gate all around nanosheet I/O device
- Patent number 12,243,941
- Issue date Mar 4, 2025
- Applied Materials, Inc.
- Myungsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxide-nitride-oxide stack of non-volatile memory...
- Patent number 12,232,324
- Issue date Feb 18, 2025
- Infineon Technologies LLC
- Michael Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 12,230,635
- Issue date Feb 18, 2025
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming an oxide volume within a fin
- Patent number 12,224,202
- Issue date Feb 11, 2025
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device architectures with tensile and compressive strained substrates
- Patent number 12,218,201
- Issue date Feb 4, 2025
- National University of Singapore
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having oxide sub-fins
- Patent number 12,211,925
- Issue date Jan 28, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon channel tempering
- Patent number 12,199,190
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a receiver substrate for a semiconductor-on-i...
- Patent number 12,183,624
- Issue date Dec 31, 2024
- Soitec
- Marcel Broekaart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor profile to decrease substrate warpage
- Patent number 12,176,387
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,159,925
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around structure and methods of forming the same
- Patent number 12,148,836
- Issue date Nov 19, 2024
- Parabellum Strategic Opportunities Fund LLC
- Pei-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,142,533
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with high-K metal gate stack
- Patent number 12,142,685
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing semiconductor structure and semiconductor stru...
- Patent number 12,119,222
- Issue date Oct 15, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Mengmeng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming epitaxial source/drain features in semiconductor...
- Patent number 12,119,378
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Heng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having semiconductor device elements in a semi...
- Patent number 12,107,130
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Ingo Muri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication for memory applications
- Patent number 12,108,604
- Issue date Oct 1, 2024
- Applied Materials, Inc.
- Jaesoo Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Latch-up prevention
- Patent number 12,062,721
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) method and devices
- Patent number 12,057,485
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure and semiconductor...
- Patent number 12,051,615
- Issue date Jul 30, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Mengzhu Qiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a nano-FET semiconductor device
- Patent number 12,040,382
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Chi Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned epitaxy layer
- Patent number 12,040,386
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate devices having a semiconductor layer between an inner sp...
- Patent number 12,009,408
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,009,427
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming silicide contact in field-effect transistors
- Patent number 12,009,216
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsiung Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE ETCHING OF SILICON-AND-GERMANIUM-CONTAINING MATERIALS WIT...
- Publication number 20250112051
- Publication date Apr 3, 2025
- Applied Materials, Inc.
- Jiayin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER SEMICONDUCTOR COMPONENT HAVING A PLURA...
- Publication number 20250113514
- Publication date Apr 3, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PRESSURE GASEOUS HYDROGEN OXIDE PROVIDING DEVICE, AND HIGH PRE...
- Publication number 20250105027
- Publication date Mar 27, 2025
- HPSP Co., Ltd.
- Si Hyung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER MOSFET AND METHOD FOR MANUFACTURING SAME
- Publication number 20250107194
- Publication date Mar 27, 2025
- MICROCHIP TECHNOLOGY INCORPORATED
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ARCHITECTURES WITH TENSILE AND COMPRESSIVE STRAINED SUBSTRATES
- Publication number 20250081561
- Publication date Mar 6, 2025
- SOITEC
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITOR PROFILE TO DECREASE SUBSTRATE WARPAGE
- Publication number 20250063744
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING ABRUPT INTERFACES BETWEEN SILICON-AND-CARBON-CON...
- Publication number 20250037987
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Stephen Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ETCHING BETWEEN SILICON-AND-GERMANIUM-CONTAINING MATERIAL...
- Publication number 20250029841
- Publication date Jan 23, 2025
- Applied Materials, Inc.
- Jiayin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20240429317
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao Po-Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
FinFET Device With High-K Metal Gate Stack
- Publication number 20240387736
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CHANNEL TEMPERING
- Publication number 20240387745
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240379857
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Pei-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SOURCE/DRAIN FEATURES
- Publication number 20240379807
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240371983
- Publication date Nov 7, 2024
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR...
- Publication number 20240371938
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jia-Heng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATCH-UP PREVENTION
- Publication number 20240363759
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240363724
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Kang SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES
- Publication number 20240355896
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM FORMATION METHOD AND PLASMA PROCESSING METHOD
- Publication number 20240355616
- Publication date Oct 24, 2024
- Hitachi High-Tech Corporation
- Kiyohiko SATOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A NANO-FET SEMICONDUCTOR DEVICE
- Publication number 20240332401
- Publication date Oct 3, 2024
- Tawan Semiconductor Manufacturing Co., Ltd.
- Li-Chi Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO IMPROVE QUALITY SILICON-CONTAINING MATERIALS
- Publication number 20240332006
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Tianyang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE OXIDATION PROCESSES FOR GATE-ALL-AROUND TRANSISTORS
- Publication number 20240321584
- Publication date Sep 26, 2024
- Applied Materials, Inc.
- Byeong Chan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, MET...
- Publication number 20240321558
- Publication date Sep 26, 2024
- Kokusai Electric Corporation
- Takeshi YASUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240297252
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contacts and Methods of Forming Same
- Publication number 20240290852
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DE...
- Publication number 20240276724
- Publication date Aug 15, 2024
- SK HYNIX INC.
- In Su PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING METHOD
- Publication number 20240258101
- Publication date Aug 1, 2024
- ASM IP HOLDING B.V.
- JiHye Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES IN MULTI-GATE SEMICONDUCTOR DEVICES AND METHOD...
- Publication number 20240250152
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING THIN FILM FOR MINIMIZING INCREASE IN DEFECTS AT I...
- Publication number 20240249935
- Publication date Jul 25, 2024
- EQ TECH PLUS CO., LTD.
- Dong Hwa SHIN
- H01 - BASIC ELECTRIC ELEMENTS

group IV semiconductor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices and methods of manufacturing the same

Source-body self-aligned method of a vertical double diffused metal...

Conformal oxidation for gate all around nanosheet I/O device

Method of forming oxide-nitride-oxide stack of non-volatile memory...

Gate-all-around integrated circuit structures having depopulated ch...

Forming an oxide volume within a fin

Device architectures with tensile and compressive strained substrates

Gate-all-around integrated circuit structures having oxide sub-fins

Method of manufacturing a multi-gate device having a semiconductor...

Silicon channel tempering

Process for producing a receiver substrate for a semiconductor-on-i...

Trench capacitor profile to decrease substrate warpage

Gate-all-around device with trimmed channel and dipoled dielectric...

Semiconductor device and method

Gate-all-around structure and methods of forming the same

Method of manufacturing a semiconductor device and a semiconductor...

FinFET device with high-K metal gate stack

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Method for preparing semiconductor structure and semiconductor stru...

Methods of forming epitaxial source/drain features in semiconductor...

Semiconductor device having semiconductor device elements in a semi...

Vertical transistor fabrication for memory applications

Latch-up prevention

Gate-all-around (GAA) method and devices

Method for manufacturing semiconductor structure and semiconductor...

Method of forming a nano-FET semiconductor device

Self-aligned epitaxy layer

Multi-gate devices having a semiconductor layer between an inner sp...

Semiconductor device and manufacturing method thereof

Methods of forming silicide contact in field-effect transistors

Patents Applicationslast 30 patents

SELECTIVE ETCHING OF SILICON-AND-GERMANIUM-CONTAINING MATERIALS WIT...

METHOD FOR PRODUCING A POWER SEMICONDUCTOR COMPONENT HAVING A PLURA...

HIGH PRESSURE GASEOUS HYDROGEN OXIDE PROVIDING DEVICE, AND HIGH PRE...

SILICON CARBIDE POWER MOSFET AND METHOD FOR MANUFACTURING SAME

DEVICE ARCHITECTURES WITH TENSILE AND COMPRESSIVE STRAINED SUBSTRATES

TRENCH CAPACITOR PROFILE TO DECREASE SUBSTRATE WARPAGE

METHODS OF FORMING ABRUPT INTERFACES BETWEEN SILICON-AND-CARBON-CON...

SELECTIVE ETCHING BETWEEN SILICON-AND-GERMANIUM-CONTAINING MATERIAL...

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

NANOSHEET TRANSISTOR

FinFET Device With High-K Metal Gate Stack

SILICON CHANNEL TEMPERING

GATE-ALL-AROUND STRUCTURE AND METHODS OF FORMING THE SAME

METAL SOURCE/DRAIN FEATURES

SEMICONDUCTOR DEVICES

METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR...

LATCH-UP PREVENTION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES

FILM FORMATION METHOD AND PLASMA PROCESSING METHOD

METHOD OF FORMING A NANO-FET SEMICONDUCTOR DEVICE

METHODS TO IMPROVE QUALITY SILICON-CONTAINING MATERIALS

SELECTIVE OXIDATION PROCESSES FOR GATE-ALL-AROUND TRANSISTORS

SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, MET...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Source/Drain Contacts and Methods of Forming Same

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DE...

SUBSTRATE PROCESSING METHOD

ISOLATION STRUCTURES IN MULTI-GATE SEMICONDUCTOR DEVICES AND METHOD...

METHOD OF FORMING THIN FILM FOR MINIMIZING INCREASE IN DEFECTS AT I...