having an amplifying gate structure

Industry

CPC
H01L29/7428

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7428having an amplifying gate structure

Industries

Patents Grantslast 30 patents

Information Patent Grant
Light detection and ranging (LIDAR) sensor system including integra...
- Patent number 11,940,567
- Issue date Mar 26, 2024
- AURORA OPERATIONS, INC.
- Amir Hosseini
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit semiconductor component and method for operating same
- Patent number 11,646,365
- Issue date May 9, 2023
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Uwe Kellner-Werdehausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection
- Patent number 10,790,384
- Issue date Sep 29, 2020
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection device, semiconductor device that includes an ESD pr...
- Patent number 10,727,221
- Issue date Jul 28, 2020
- NXP USA, INC.
- Rouying Zhan
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Silicon controlled rectifier dynamic triggering and shutdown via co...
- Patent number 10,608,431
- Issue date Mar 31, 2020
- Analog Devices, Inc.
- Linfeng He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,355,116
- Issue date Jul 16, 2019
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase control thyristor
- Patent number 10,355,117
- Issue date Jul 16, 2019
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-controlled rectifiers having a cathode coupled by a contact...
- Patent number 10,347,622
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- You Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the semiconductor...
- Patent number 10,326,010
- Issue date Jun 18, 2019
- Shindengen Electric Manufacturing Co., Ltd.
- Yukihiro Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a doped semiconductor layer
- Patent number 10,325,996
- Issue date Jun 18, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor with improved plasma spreading
- Patent number 10,170,557
- Issue date Jan 1, 2019
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically assist-triggered wide bandgap thyristors having positive...
- Patent number 9,941,439
- Issue date Apr 10, 2018
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component including a short-circuit structure
- Patent number 9,876,004
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor, a method of triggering a thyristor, and thyristor circuits
- Patent number 9,871,129
- Issue date Jan 16, 2018
- Silergy Corp.
- Rob Van Dalen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device with bipolar junction transistor cells
- Patent number 9,508,711
- Issue date Nov 29, 2016
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component including a short-circuit structure
- Patent number 9,269,769
- Issue date Feb 23, 2016
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically assist-triggered wide bandgap thyristors having positive...
- Patent number 9,171,977
- Issue date Oct 27, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase control thyristor with improved pattern of local emitter shor...
- Patent number 9,142,656
- Issue date Sep 22, 2015
- ABB Technology AG
- Peter Streit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and a method for providing ESD protection
- Patent number 9,099,306
- Issue date Aug 4, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Patrice Besse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate amplification triac
- Patent number 8,912,566
- Issue date Dec 16, 2014
- STMicroelectronics (Tours) SAS
- Yannick Hague
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-conducting power semiconductor device
- Patent number 8,847,277
- Issue date Sep 30, 2014
- ABB Technology AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar power semiconductor component comprising a p-type emitter a...
- Patent number 8,415,710
- Issue date Apr 9, 2013
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage ESD LDMOS-SCR with gate reference voltage
- Patent number 7,910,950
- Issue date Mar 22, 2011
- National Semiconductor Corporation
- Vladislav Vashchenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar power semiconductor component comprising a p-type emitter a...
- Patent number 7,884,389
- Issue date Feb 8, 2011
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor which can be triggered electrically and by radiation
- Patent number 7,696,528
- Issue date Apr 13, 2010
- Infineon Technologies AG
- Uwe Kellner-Werdehausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor with recovery protection
- Patent number 7,687,826
- Issue date Mar 30, 2010
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor optimized for a sinusoidal HF control
- Patent number 7,612,387
- Issue date Nov 3, 2009
- STMicroelectronics S.A.
- Christophe Mauriac
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor arrangement with turnoff protection
- Patent number 7,521,730
- Issue date Apr 21, 2009
- Siemens Aktiengesellschaft
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triac operating in quadrants Q1 and Q4
- Patent number 7,262,442
- Issue date Aug 28, 2007
- STMicroelectronics S.A.
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BIDIRECTIONAL THYRISTOR DEVICE
- Publication number 20240038880
- Publication date Feb 1, 2024
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING SAME
- Publication number 20210367067
- Publication date Nov 25, 2021
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Uwe KELLNER-WERDEHAUSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING OVERVOLTAGE PROTECTION AND METHOD...
- Publication number 20200395472
- Publication date Dec 17, 2020
- Infineon Technologies Austria AG
- Markus BENINGER-BINA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR...
- Publication number 20180182876
- Publication date Jun 28, 2018
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD
- Yukihiro Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR WITH IMPROVED PLASMA SPREADING
- Publication number 20180090572
- Publication date Mar 29, 2018
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Doped Semiconductor Layer
- Publication number 20180061962
- Publication date Mar 1, 2018
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CONTROL THYRISTOR
- Publication number 20170243966
- Publication date Aug 24, 2017
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND A METHOD FOR PROVIDING ESD PROTECTION
- Publication number 20150076556
- Publication date Mar 19, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Patrice Besse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR, A METHOD OF TRIGGERING A THYRISTOR, AND THYRISTOR CIRCUITS
- Publication number 20140375377
- Publication date Dec 25, 2014
- NXP B.V.
- Rob Van Dalen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Producing a Doped Semiconductor...
- Publication number 20140001514
- Publication date Jan 2, 2014
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE
- Publication number 20130207157
- Publication date Aug 15, 2013
- ABB TECHNOLOGY AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE AMPLIFICATION TRIAC
- Publication number 20130105855
- Publication date May 2, 2013
- STMicroelectronics (Tours) SAS
- Yannick Hague
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CONTROL THYRISTOR WITH IMPROVED PATTERN OF LOCAL EMITTER SHOR...
- Publication number 20130105857
- Publication date May 2, 2013
- ABB TECHNOLOGY AG
- Peter STREIT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICALLY ASSIST-TRIGGERED WIDE BANDGAP THYRISTORS HAVING POSITIVE...
- Publication number 20120319133
- Publication date Dec 20, 2012
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Power Semiconductor Component Comprising a P-type Emitter a...
- Publication number 20110127576
- Publication date Jun 2, 2011
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE
- Publication number 20090140290
- Publication date Jun 4, 2009
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR AND METHODS FOR PRODUCING A THYRISTOR
- Publication number 20090057714
- Publication date Mar 5, 2009
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar power semiconductor component comprising a p-type emitter a...
- Publication number 20070215981
- Publication date Sep 20, 2007
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor optimized for a sinusoidal HF control
- Publication number 20070138502
- Publication date Jun 21, 2007
- STMicroelectronics S.A.
- Christophe Mauriac
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor Which Can Be Triggered Electrically And By Radiation, And...
- Publication number 20070131963
- Publication date Jun 14, 2007
- Uwe Kellner-Werdehausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor with recovery protection
- Publication number 20070051972
- Publication date Mar 8, 2007
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Triac operating in quadrants Q1 and Q4
- Publication number 20050133815
- Publication date Jun 23, 2005
- STMicroelectronics, S.A.
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for setting the breakover voltage of a thyristor
- Publication number 20020022306
- Publication date Feb 21, 2002
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS

having an amplifying gate structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Light detection and ranging (LIDAR) sensor system including integra...

Power semiconductor device having overvoltage protection and method...

Short-circuit semiconductor component and method for operating same

Power semiconductor device having overvoltage protection

ESD protection device, semiconductor device that includes an ESD pr...

Silicon controlled rectifier dynamic triggering and shutdown via co...

Power semiconductor device

Phase control thyristor

Silicon-controlled rectifiers having a cathode coupled by a contact...

Semiconductor device and method of manufacturing the semiconductor...

Method for producing a doped semiconductor layer

Thyristor with improved plasma spreading

Optically assist-triggered wide bandgap thyristors having positive...

Semiconductor component including a short-circuit structure

Thyristor, a method of triggering a thyristor, and thyristor circuits

Semiconductor device with bipolar junction transistor cells

Semiconductor component including a short-circuit structure

Optically assist-triggered wide bandgap thyristors having positive...

Phase control thyristor with improved pattern of local emitter shor...

Integrated circuit device and a method for providing ESD protection

Gate amplification triac

Reverse-conducting power semiconductor device

Bipolar power semiconductor component comprising a p-type emitter a...

High voltage ESD LDMOS-SCR with gate reference voltage

Bipolar power semiconductor component comprising a p-type emitter a...

Thyristor which can be triggered electrically and by radiation

Thyristor with recovery protection

Thyristor optimized for a sinusoidal HF control

Thyristor arrangement with turnoff protection

Triac operating in quadrants Q1 and Q4

Patents Applicationslast 30 patents

BIDIRECTIONAL THYRISTOR DEVICE

SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING SAME

POWER SEMICONDUCTOR DEVICE HAVING OVERVOLTAGE PROTECTION AND METHOD...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR...

THYRISTOR WITH IMPROVED PLASMA SPREADING

Method for Producing a Doped Semiconductor Layer

PHASE CONTROL THYRISTOR

INTEGRATED CIRCUIT DEVICE AND A METHOD FOR PROVIDING ESD PROTECTION

THYRISTOR, A METHOD OF TRIGGERING A THYRISTOR, AND THYRISTOR CIRCUITS

Semiconductor Device and Method for Producing a Doped Semiconductor...

REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE

GATE AMPLIFICATION TRIAC

PHASE CONTROL THYRISTOR WITH IMPROVED PATTERN OF LOCAL EMITTER SHOR...

OPTICALLY ASSIST-TRIGGERED WIDE BANDGAP THYRISTORS HAVING POSITIVE...

Bipolar Power Semiconductor Component Comprising a P-type Emitter a...

SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE

THYRISTOR AND METHODS FOR PRODUCING A THYRISTOR

Bipolar power semiconductor component comprising a p-type emitter a...

Thyristor optimized for a sinusoidal HF control

Thyristor Which Can Be Triggered Electrically And By Radiation, And...

Thyristor with recovery protection

Triac operating in quadrants Q1 and Q4

Method for setting the breakover voltage of a thyristor