having an emitter comprising one or more non-monocrystalline elements of group IV

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H01L29/7375

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7375having an emitter comprising one or more non-monocrystalline elements of group IV

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with extrinsic base region and method of fabri...
- Patent number 12,107,143
- Issue date Oct 1, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible transistors with near-junction heat dissipation
- Patent number 11,996,473
- Issue date May 28, 2024
- Wisconsin Alumni Research Foundation
- Zhenqiang Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,996,474
- Issue date May 28, 2024
- Nexperia B.V.
- Stefan Berglund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,017
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,018
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,916,149
- Issue date Feb 27, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manganese-doped perovskite layers and semiconductor device incorpor...
- Patent number 11,908,943
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a defect layer and method of fabrication...
- Patent number 11,901,414
- Issue date Feb 13, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,888,067
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,888,066
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,848,386
- Issue date Dec 19, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,837,664
- Issue date Dec 5, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making a semiconductor device
- Patent number 11,817,486
- Issue date Nov 14, 2023
- NXP USA, INC.
- James Albert Kirchgessner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,757,043
- Issue date Sep 12, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making a semiconductor device
- Patent number 11,569,357
- Issue date Jan 31, 2023
- NXP USA, INC.
- James Albert Kirchgessner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,532,736
- Issue date Dec 20, 2022
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method for bipolar transistor stac...
- Patent number 11,488,950
- Issue date Nov 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,469,327
- Issue date Oct 11, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor de...
- Patent number 11,456,374
- Issue date Sep 27, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,444,203
- Issue date Sep 13, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,417,768
- Issue date Aug 16, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,411,116
- Issue date Aug 9, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,398,570
- Issue date Jul 26, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with undercut extrinsic base reg...
- Patent number 11,362,201
- Issue date Jun 14, 2022
- GLOBALFOUNDRIES U.S. INC.
- Sarah McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,355,643
- Issue date Jun 7, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,349,031
- Issue date May 31, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and preparation method thereof
- Patent number 11,322,595
- Issue date May 3, 2022
- Yanshan University
- Chunyu Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,296,228
- Issue date Apr 5, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,289,607
- Issue date Mar 29, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,289,608
- Issue date Mar 29, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCURRENT COMPENSATION IN A MEMORY SYSTEM
- Publication number 20240274720
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Hiroshi Akamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LATERAL BASE LINK REGION
- Publication number 20240204052
- Publication date Jun 20, 2024
- NXP B.V.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH AMORPHOUS SEMICONDUCTOR REGIONS
- Publication number 20240145585
- Publication date May 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam DUTTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240088299
- Publication date Mar 14, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...
- Publication number 20240030308
- Publication date Jan 25, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANGANESE-DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPOR...
- Publication number 20230231055
- Publication date Jul 20, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...
- Publication number 20230215952
- Publication date Jul 6, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...
- Publication number 20230215953
- Publication date Jul 6, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230163216
- Publication date May 25, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230155028
- Publication date May 18, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230155029
- Publication date May 18, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230142605
- Publication date May 11, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING A SEMICONDUCTOR DEVICE
- Publication number 20230131166
- Publication date Apr 27, 2023
- NXP USA, Inc.
- James Albert Kirchgessner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230128526
- Publication date Apr 27, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230123515
- Publication date Apr 20, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A DEFECT LAYER AND METHOD OF FABRICATION...
- Publication number 20230081675
- Publication date Mar 16, 2023
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230057354
- Publication date Feb 23, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING A SEMICONDUCTOR DEVICE
- Publication number 20220367650
- Publication date Nov 17, 2022
- NXP USA, Inc.
- James Albert Kirchgessner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS METAL THIN FILM TRANSISTORS
- Publication number 20220262932
- Publication date Aug 18, 2022
- Amorphyx, Incorporated
- Sean William MUIR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH UNDERCUT EXTRINSIC BASE REG...
- Publication number 20220190145
- Publication date Jun 16, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Sarah McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20220077319
- Publication date Mar 10, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343872
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343871
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343873
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210343874
- Publication date Nov 4, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210328067
- Publication date Oct 21, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20210320211
- Publication date Oct 14, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREOF
- Publication number 20210305379
- Publication date Sep 30, 2021
- Yanshan University
- Chunyu Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH ONE OR MORE SEALED AIRGAP
- Publication number 20210257454
- Publication date Aug 19, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS

having an emitter comprising one or more non-monocrystalline elements of group IV

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with extrinsic base region and method of fabri...

Flexible transistors with near-junction heat dissipation

Semiconductor device and method of manufacture

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Manganese-doped perovskite layers and semiconductor device incorpor...

Semiconductor device with a defect layer and method of fabrication...

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

Semiconductor device and method of making a semiconductor device

Doped polar layers and semiconductor device incorporating same

Semiconductor device and method of making a semiconductor device

Semiconductor device

Integrated circuit structure and method for bipolar transistor stac...

Doped polar layers and semiconductor device incorporating same

Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor de...

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Heterojunction bipolar transistors with undercut extrinsic base reg...

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Heterojunction bipolar transistor and preparation method thereof

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Patents Applicationslast 30 patents

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

CONCURRENT COMPENSATION IN A MEMORY SYSTEM

SEMICONDUCTOR DEVICE WITH LATERAL BASE LINK REGION

HETEROJUNCTION BIPOLAR TRANSISTOR WITH AMORPHOUS SEMICONDUCTOR REGIONS

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...

MANGANESE-DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPOR...

B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...

B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MAKING A SEMICONDUCTOR DEVICE

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICE WITH A DEFECT LAYER AND METHOD OF FABRICATION...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MAKING A SEMICONDUCTOR DEVICE

AMORPHOUS METAL THIN FILM TRANSISTORS

HETEROJUNCTION BIPOLAR TRANSISTORS WITH UNDERCUT EXTRINSIC BASE REG...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

HETEROJUNCTION BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREOF

HETEROJUNCTION BIPOLAR TRANSISTORS WITH ONE OR MORE SEALED AIRGAP