having contacts specially adapted to the FinFET geometry

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H01L2029/7858

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

Current Industry

H01L2029/7858having contacts specially adapted to the FinFET geometry

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,300,751
- Issue date May 13, 2025
- Samsung Electronics Co., Ltd.
- Junggil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 12,300,742
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having corner spacer...
- Patent number 12,294,023
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chen-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain contact
- Patent number 12,288,822
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Che Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate for gate-all-around devices and methods for forming the...
- Patent number 12,288,811
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming contact features in field-effect transistors
- Patent number 12,272,605
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Hsiung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming epitaxial source/drain features and semiconducto...
- Patent number 12,272,732
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around (GAA) transistor structures having a plurality of s...
- Patent number 12,272,752
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shuen-Shin Liang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,272,603
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage reduction in gate-all-around devices
- Patent number 12,266,686
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including horizontal gate-all-around (hGAA) n...
- Patent number 12,266,704
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with backside contact
- Patent number 12,266,601
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate field-effect transistors in integrated circuits
- Patent number 12,267,991
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned contacts
- Patent number 12,266,571
- Issue date Apr 1, 2025
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate transistor structure
- Patent number 12,261,214
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k feature formation processes and structures formed thereby
- Patent number 12,255,241
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gates and method of forming
- Patent number 12,243,925
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal oxidation for gate all around nanosheet I/O device
- Patent number 12,243,941
- Issue date Mar 4, 2025
- Applied Materials, Inc.
- Myungsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure oxide semiconductor vertical gate-all-around (VGAA)...
- Patent number 12,238,914
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance contact feature
- Patent number 12,237,390
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having partitioned source or drain co...
- Patent number 12,230,717
- Issue date Feb 18, 2025
- Intel Corporation
- Mauro J. Kobrinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric fin structure
- Patent number 12,230,712
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 12,224,350
- Issue date Feb 11, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices having gate-all-around...
- Patent number 12,218,226
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsiung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wiring in diffusion breaks in an integrated circuit
- Patent number 12,218,135
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide of nanostructure transistor with increased corner thickness
- Patent number 12,218,197
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a Fin at a S/D region and a semiconduct...
- Patent number 12,218,136
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device with air gap spacer in source/drain...
- Patent number 12,211,937
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ching-Feng Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around device and method of forming the same
- Patent number 12,206,004
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Ju Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architecture having gate contacts
- Patent number 12,199,101
- Issue date Jan 14, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH DIELECTRIC STRUCTURE
- Publication number 20250072054
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20250048698
- Publication date Feb 6, 2025
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250031404
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hsuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS
- Publication number 20250022881
- Publication date Jan 16, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MOL RELIABILITY EVALUATION
- Publication number 20250022759
- Publication date Jan 16, 2025
- International Business Machines Corporation
- HUIMEI ZHOU
- G01 - MEASURING TESTING
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395905
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHODS OF FABRI...
- Publication number 20240387732
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS
- Publication number 20240387746
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL MOBILITY IMPROVEMENT
- Publication number 20240387637
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20240387623
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Chien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods
- Publication number 20240387662
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240387735
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Structures for Gate-All-Around Devices and Methods of Formi...
- Publication number 20240387659
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES WITH OPTIMIZED GATE SPACERS AND GATE END DI...
- Publication number 20240387674
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Field-Effect Transistors In Integrated Circuits
- Publication number 20240381607
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
Source/Drain Isolation Structures For Leakage Prevention
- Publication number 20240379749
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE
- Publication number 20240379855
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH HYBRID NANOSTRUCTURES
- Publication number 20240371934
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ting LAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work Function Layers For Transistor Gate Electrodes
- Publication number 20240363711
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING GATE BIOSENSOR
- Publication number 20240361271
- Publication date Oct 31, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION (STI) CONTACT STRUCTURES AND METHODS OF FO...
- Publication number 20240355875
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH EXPANSION FILM AND METHOD FOR F...
- Publication number 20240355927
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Ying CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH FRONT SIDE SIGNAL LINES AND BACKS...
- Publication number 20240355819
- Publication date Oct 24, 2024
- Intel Corporation
- Quan SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work Function Control In Gate Structures
- Publication number 20240347636
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE
- Publication number 20240347635
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240347535
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shi Ning JU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact for Semiconductor Device and Method of Forming Thereof
- Publication number 20240339539
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huei-Shan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Interleaving N-Well And P-Well Pickup Region Design For Ic Devices
- Publication number 20240334670
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Ka-Hing Fung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICE WITH EPITAXIAL SOURCE/DRAIN REGION
- Publication number 20240321966
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS

having contacts specially adapted to the FinFET geometry

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Fin field-effect transistor device and method of forming the same

Method of manufacturing a semiconductor device having corner spacer...

Semiconductor device with source/drain contact

Metal gate for gate-all-around devices and methods for forming the...

Methods of forming contact features in field-effect transistors

Method for forming epitaxial source/drain features and semiconducto...

Gate all around (GAA) transistor structures having a plurality of s...

Method of manufacturing a semiconductor device and a semiconductor...

Leakage reduction in gate-all-around devices

Semiconductor devices including horizontal gate-all-around (hGAA) n...

Semiconductor device structure with backside contact

Multi-gate field-effect transistors in integrated circuits

Self-aligned contacts

Multi-gate transistor structure

Low-k feature formation processes and structures formed thereby

Transistor gates and method of forming

Conformal oxidation for gate all around nanosheet I/O device

Heterostructure oxide semiconductor vertical gate-all-around (VGAA)...

Low resistance contact feature

Integrated circuit structures having partitioned source or drain co...

Dielectric fin structure

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Methods of fabricating semiconductor devices having gate-all-around...

Wiring in diffusion breaks in an integrated circuit

Gate oxide of nanostructure transistor with increased corner thickness

Semiconductor device having a Fin at a S/D region and a semiconduct...

Field effect transistor device with air gap spacer in source/drain...

Gate all around device and method of forming the same

Self-aligned gate endcap (SAGE) architecture having gate contacts

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH DIELECTRIC STRUCTURE

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS

TEST STRUCTURE FOR MOL RELIABILITY EVALUATION

USER MODEL-BASED DATA LOSS PREVENTION

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHODS OF FABRI...

METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS

CHANNEL MOBILITY IMPROVEMENT

SEMICONDUCTOR DEVICE STRUCTURE

Semiconductor Devices and Methods

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

Contact Structures for Gate-All-Around Devices and Methods of Formi...

GATE-ALL-AROUND DEVICES WITH OPTIMIZED GATE SPACERS AND GATE END DI...

Multi-Gate Field-Effect Transistors In Integrated Circuits

Source/Drain Isolation Structures For Leakage Prevention

CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE

SEMICONDUCTOR STRUCTURE WITH HYBRID NANOSTRUCTURES

Work Function Layers For Transistor Gate Electrodes

FLOATING GATE BIOSENSOR

SHALLOW TRENCH ISOLATION (STI) CONTACT STRUCTURES AND METHODS OF FO...

SEMICONDUCTOR DEVICE STRUCTURE WITH EXPANSION FILM AND METHOD FOR F...

INTEGRATED CIRCUIT STRUCTURE WITH FRONT SIDE SIGNAL LINES AND BACKS...

Work Function Control In Gate Structures

SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Contact for Semiconductor Device and Method of Forming Thereof

Non-Interleaving N-Well And P-Well Pickup Region Design For Ic Devices

DEVICE WITH EPITAXIAL SOURCE/DRAIN REGION