Heat treatment

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CPC
C30B33/02

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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C30B33/02Heat treatment

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Patents Grantslast 30 patents

Information Patent Grant
Preparation method for ultrahigh-conductivity multilayer single-cry...
- Patent number 12,203,193
- Issue date Jan 21, 2025
- Peking University
- Kaihui Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of PBSE nanostructures by employing chemical bath depos...
- Patent number 12,195,874
- Issue date Jan 14, 2025
- Illinois Tool Works Inc.
- Richard S. Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extreme large grain (1 mm) lateral growth of Cd(Se,Te) alloy thin f...
- Patent number 12,195,879
- Issue date Jan 14, 2025
- Alliance for Sustainable Energy, LLC
- David Scott Albin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of nonlinear optical crystals
- Patent number 12,152,316
- Issue date Nov 26, 2024
- KLA Corporation
- Yung-Ho Alex Chuang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and manufacturing method of the same
- Patent number 12,142,645
- Issue date Nov 12, 2024
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,046,469
- Issue date Jul 23, 2024
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced optical absorption for silicon carbide crystalline materials
- Patent number 12,024,794
- Issue date Jul 2, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer, radiation detection element, radiation detecto...
- Patent number 12,021,160
- Issue date Jun 25, 2024
- JX Metals Corporation
- Koji Murakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of processing a lithium tantalate and/or lithium niobate waf...
- Patent number 12,012,669
- Issue date Jun 18, 2024
- Fujian Jing'An Optoelectronics Co., Ltd.
- Mingxin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide magnetometer and associated material formation methods
- Patent number 11,993,864
- Issue date May 28, 2024
- The Johns Hopkins University
- John B. Abraham
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon single crystal wafer and silicon s...
- Patent number 11,959,191
- Issue date Apr 16, 2024
- Shin-Etsu Handotai Co., Ltd.
- Wei Feng Qu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate manufacturing device applicable to large-di...
- Patent number 11,955,354
- Issue date Apr 9, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal and substrate of conductive GaAs, and method for forming th...
- Patent number 11,955,251
- Issue date Apr 9, 2024
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,939,700
- Issue date Mar 26, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC single crystal manufacturing method, SiC single crystal manufac...
- Patent number 11,932,967
- Issue date Mar 19, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation and application of highly coherent diamond nitrogen vac...
- Patent number 11,905,620
- Issue date Feb 20, 2024
- QUFU NORMAL UNIVERSITY
- Xiaobing Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing substrate for solar cell and substrate for...
- Patent number 11,901,475
- Issue date Feb 13, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroyuki Otsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Carrier-assisted method for parting crystalline material along lase...
- Patent number 11,901,181
- Issue date Feb 13, 2024
- Wolfspeed, Inc.
- Matthew Donofrio
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Gallium arsenide single crystal substrate and method for producing...
- Patent number 11,891,720
- Issue date Feb 6, 2024
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- G01 - MEASURING TESTING
Information Patent Grant
Method for preparing large size beta-type ammonium tetramolybdate m...
- Patent number 11,859,314
- Issue date Jan 2, 2024
- Zhengzhou University
- Xiaochao Wu
- C30 - CRYSTAL GROWTH
Information Patent Grant
ALD method with multi-chambers for sic or multi-elements epitaxial...
- Patent number 11,834,754
- Issue date Dec 5, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Zhaosheng Meng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Lithium niobate having p-type nanowire region or n-type nanowire re...
- Patent number 11,834,755
- Issue date Dec 5, 2023
- Nankai University
- Guo-Quan Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thin film crystallization process
- Patent number 11,810,785
- Issue date Nov 7, 2023
- LUX SEMICONDUCTORS
- Shane Thomas McMahon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Tunable templating layers for perpendicularly magnetized Heusler films
- Patent number 11,804,321
- Issue date Oct 31, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Production method of silicon carbide wafer, production method of se...
- Patent number 11,795,576
- Issue date Oct 24, 2023
- Denso Corporation
- Bahman Soltani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing chamber with annealing mini-environment
- Patent number 11,791,176
- Issue date Oct 17, 2023
- Applied Materials, Inc.
- Michael Honan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Carbon-doped silicon single crystal wafer and method for manufactur...
- Patent number 11,761,118
- Issue date Sep 19, 2023
- Shin-Etsu Handotai Co., Ltd.
- Weifeng Qu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitrogen doped and vacancy dominated silicon ingot and thermally tr...
- Patent number 11,753,741
- Issue date Sep 12, 2023
- GlobalWafers Co., Ltd.
- Zheng Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SILICON EPITAXIAL SUBSTRATE AND SILICON EPI...
- Publication number 20250051961
- Publication date Feb 13, 2025
- GlobalWafers Japan Co., Ltd.
- Takeshi SENDA
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Crystal Growth Device and Quality Control Method
- Publication number 20250027227
- Publication date Jan 23, 2025
- Winsheng Material Technology Co., Ltd.
- Yun-Fu Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
- Publication number 20250011968
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Shan-Hui Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...
- Publication number 20240417885
- Publication date Dec 19, 2024
- Pacific Innovations Pte. Ltd.
- Faouzi Zerrouk
- C30 - CRYSTAL GROWTH
Information Patent Application
CVD SINGLE CRYSTAL DIAMOND
- Publication number 20240417884
- Publication date Dec 19, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- Benjamin Simon TRUSCOTT
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20240401229
- Publication date Dec 5, 2024
- Rohm Co., Ltd.
- Keiju SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...
- Publication number 20240392476
- Publication date Nov 28, 2024
- SOITEC
- Ionut Radu
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE MATERIAL
- Publication number 20240359991
- Publication date Oct 31, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS
- Publication number 20240344239
- Publication date Oct 17, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MEASURING ETCHING AMOUNT, AND MEASUREMENT SYSTEM THEREFOR
- Publication number 20240328776
- Publication date Oct 3, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...
- Publication number 20240328032
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...
- Publication number 20240332366
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...
- Publication number 20240318352
- Publication date Sep 26, 2024
- SiCrystal GmbH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL DIAMOND COMPONENT AND METHOD FOR PRODUCING
- Publication number 20240309554
- Publication date Sep 19, 2024
- Element Six Technologies Limited
- Matthew Lee MARKHAM
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING ROLLS AND MEMBRANES OF SUBMICROMETRIC THICKNE...
- Publication number 20240304460
- Publication date Sep 12, 2024
- INSTITUTO SUPERIOR TECNICO
- Katharina LORENZ
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PREPARING A SURFACE OF A SINGLE CRYSTAL WAFER AS AN EPITA...
- Publication number 20240287707
- Publication date Aug 29, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Everardus Maria SMINK
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING THE SAME
- Publication number 20240287706
- Publication date Aug 29, 2024
- Sumitomo Electric Industries, Ltd.
- Hitoshi SUMIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING THE SAME
- Publication number 20240279843
- Publication date Aug 22, 2024
- Sumitomo Electric Industries, Ltd.
- Hitoshi SUMIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURE AND REPAIR OF HIGH TEMPERATURE REINFORCED SUPERCONDUCTORS
- Publication number 20240254652
- Publication date Aug 1, 2024
- LAU Superconductors Inc.
- Wayne Chung Wei Lau
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION DEVICE AND METHOD FOR SEMI-INSULATING INDIUM PHOSPHIDE
- Publication number 20240209546
- Publication date Jun 27, 2024
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Shujie WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing a crystal for a scintillation crystal detector...
- Publication number 20240183061
- Publication date Jun 6, 2024
- CRYTUR, SPOL S R.O.
- Karel BLAZEK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER
- Publication number 20240141553
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pu-Fang CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SUBSTRATE FOR SOLAR CELL AND SUBSTRATE FOR...
- Publication number 20240136464
- Publication date Apr 25, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroyuki OTSUKA
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Carrier-Assisted Method for Parting Crystalline Material Along Lase...
- Publication number 20240128085
- Publication date Apr 18, 2024
- Wolfspeed, Inc.
- Matthew Donofrio
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Deposition Of Piezoelectric Films
- Publication number 20240114800
- Publication date Apr 4, 2024
- Applied Materials, Inc.
- Vijay Bhan Sharma
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
PROCESS FOR MANUFACTURING A PHASE CHANGE MATERIAL
- Publication number 20240114806
- Publication date Apr 4, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Damien TEREBENEC
- C30 - CRYSTAL GROWTH
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...
- Publication number 20240105782
- Publication date Mar 28, 2024
- TANKEBLUE SEMICONDUCTOR CO., LTD.
- Yanfang LOU
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OP...
- Publication number 20240093403
- Publication date Mar 21, 2024
- Mohammad Reza AZIZIYAN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SINGLE CRYSTALS
- Publication number 20240035200
- Publication date Feb 1, 2024
- EBNER INDUSTRIEOFENBAU GMBH
- Robert EBNER
- C30 - CRYSTAL GROWTH

Heat treatment

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Preparation method for ultrahigh-conductivity multilayer single-cry...

Fabrication of PBSE nanostructures by employing chemical bath depos...

Extreme large grain (1 mm) lateral growth of Cd(Se,Te) alloy thin f...

Methods for determining suitability of silicon substrates for epitaxy

Passivation of nonlinear optical crystals

Silicon wafer and manufacturing method of the same

Large diameter silicon carbide wafers

Manufacturing method for semiconductor silicon wafer

Reduced optical absorption for silicon carbide crystalline materials

Semiconductor wafer, radiation detection element, radiation detecto...

Method of processing a lithium tantalate and/or lithium niobate waf...

Silicon carbide magnetometer and associated material formation methods

Method for manufacturing silicon single crystal wafer and silicon s...

Semiconductor substrate manufacturing device applicable to large-di...

Crystal and substrate of conductive GaAs, and method for forming th...

Impurity control during formation of aluminum nitride crystals and...

SiC single crystal manufacturing method, SiC single crystal manufac...

Preparation and application of highly coherent diamond nitrogen vac...

Method for manufacturing substrate for solar cell and substrate for...

Carrier-assisted method for parting crystalline material along lase...

Gallium arsenide single crystal substrate and method for producing...

Method for preparing large size beta-type ammonium tetramolybdate m...

ALD method with multi-chambers for sic or multi-elements epitaxial...

Lithium niobate having p-type nanowire region or n-type nanowire re...

Thin film crystallization process

Tunable templating layers for perpendicularly magnetized Heusler films

Production method of silicon carbide wafer, production method of se...

Processing chamber with annealing mini-environment

Carbon-doped silicon single crystal wafer and method for manufactur...

Nitrogen doped and vacancy dominated silicon ingot and thermally tr...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SILICON EPITAXIAL SUBSTRATE AND SILICON EPI...

Silicon Carbide Crystal Growth Device and Quality Control Method

METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY

Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...

CVD SINGLE CRYSTAL DIAMOND

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF

METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...

SILICON CARBIDE MATERIAL

LARGE DIAMETER SILICON CARBIDE WAFERS

REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS

METHOD FOR MEASURING ETCHING AMOUNT, AND MEASUREMENT SYSTEM THEREFOR

SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...

METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...

SINGLE CRYSTAL DIAMOND COMPONENT AND METHOD FOR PRODUCING

PROCESS FOR PRODUCING ROLLS AND MEMBRANES OF SUBMICROMETRIC THICKNE...

METHOD OF PREPARING A SURFACE OF A SINGLE CRYSTAL WAFER AS AN EPITA...

SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING THE SAME

SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING THE SAME

MANUFACTURE AND REPAIR OF HIGH TEMPERATURE REINFORCED SUPERCONDUCTORS

PREPARATION DEVICE AND METHOD FOR SEMI-INSULATING INDIUM PHOSPHIDE

Method of producing a crystal for a scintillation crystal detector...

VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER

METHOD FOR MANUFACTURING SUBSTRATE FOR SOLAR CELL AND SUBSTRATE FOR...

Carrier-Assisted Method for Parting Crystalline Material Along Lase...

Deposition Of Piezoelectric Films

PROCESS FOR MANUFACTURING A PHASE CHANGE MATERIAL

MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...

METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OP...

METHOD FOR GROWING SINGLE CRYSTALS