Heat treatment

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CPC
C30B33/02

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Current Industry

C30B33/02Heat treatment

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Processed wafer and processing method thereof
- Patent number 12,366,008
- Issue date Jul 22, 2025
- Fujian Jing'An Optoelectronics Co., Ltd.
- Shengyu Yang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing SiC substrate
- Patent number 12,362,175
- Issue date Jul 15, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride substrate manufacturing method, aluminum nitride s...
- Patent number 12,325,936
- Issue date Jun 10, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of heat-treating silicon wafer using lateral heat treatment...
- Patent number 12,320,034
- Issue date Jun 3, 2025
- Sumco Corporation
- Yoshihiro Kuwano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating silicon carbide material by performing a firs...
- Patent number 12,319,581
- Issue date Jun 3, 2025
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for producing semiconductor wafers
- Patent number 12,313,578
- Issue date May 27, 2025
- Siltronic AG
- Michael Boy
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacture and repair of high temperature reinforced superconductors
- Patent number 12,297,558
- Issue date May 13, 2025
- LAU Superconductors Inc.
- Wayne Chung Wei Lau
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride crystals having low urbach energy and high transpa...
- Patent number 12,264,410
- Issue date Apr 1, 2025
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Processing chamber with annealing mini-environment
- Patent number 12,249,522
- Issue date Mar 11, 2025
- Applied Materials, Inc.
- Michael Honan
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Grant
Method for producing a SiC seed crystal for growth of a SiC ingot b...
- Patent number 12,247,319
- Issue date Mar 11, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing substrate for solar cell and substrate for...
- Patent number 12,237,435
- Issue date Feb 25, 2025
- Shin-Etsu Chemical Co., Ltd.
- Hiroyuki Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for ultrahigh-conductivity multilayer single-cry...
- Patent number 12,203,193
- Issue date Jan 21, 2025
- Peking University
- Kaihui Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of PBSE nanostructures by employing chemical bath depos...
- Patent number 12,195,874
- Issue date Jan 14, 2025
- Illinois Tool Works Inc.
- Richard S. Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extreme large grain (1 mm) lateral growth of Cd(Se,Te) alloy thin f...
- Patent number 12,195,879
- Issue date Jan 14, 2025
- Alliance for Sustainable Energy, LLC
- David Scott Albin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of nonlinear optical crystals
- Patent number 12,152,316
- Issue date Nov 26, 2024
- KLA Corporation
- Yung-Ho Alex Chuang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and manufacturing method of the same
- Patent number 12,142,645
- Issue date Nov 12, 2024
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,046,469
- Issue date Jul 23, 2024
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced optical absorption for silicon carbide crystalline materials
- Patent number 12,024,794
- Issue date Jul 2, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer, radiation detection element, radiation detecto...
- Patent number 12,021,160
- Issue date Jun 25, 2024
- JX Metals Corporation
- Koji Murakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of processing a lithium tantalate and/or lithium niobate waf...
- Patent number 12,012,669
- Issue date Jun 18, 2024
- Fujian Jing'An Optoelectronics Co., Ltd.
- Mingxin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide magnetometer and associated material formation methods
- Patent number 11,993,864
- Issue date May 28, 2024
- The Johns Hopkins University
- John B. Abraham
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon single crystal wafer and silicon s...
- Patent number 11,959,191
- Issue date Apr 16, 2024
- Shin-Etsu Handotai Co., Ltd.
- Wei Feng Qu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate manufacturing device applicable to large-di...
- Patent number 11,955,354
- Issue date Apr 9, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal and substrate of conductive GaAs, and method for forming th...
- Patent number 11,955,251
- Issue date Apr 9, 2024
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,939,700
- Issue date Mar 26, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC single crystal manufacturing method, SiC single crystal manufac...
- Patent number 11,932,967
- Issue date Mar 19, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation and application of highly coherent diamond nitrogen vac...
- Patent number 11,905,620
- Issue date Feb 20, 2024
- QUFU NORMAL UNIVERSITY
- Xiaobing Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing substrate for solar cell and substrate for...
- Patent number 11,901,475
- Issue date Feb 13, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroyuki Otsuka
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Systems and Methods for Substituent Doping of Diamonds
- Publication number 20250230578
- Publication date Jul 17, 2025
- Adam Khan
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Epitaxial Wafer and Preparation Method Therefor
- Publication number 20250223725
- Publication date Jul 10, 2025
- BYD COMPANY LIMITED
- Yuze Guo
- C30 - CRYSTAL GROWTH
Information Patent Application
TUNED MATERIALS, TUNED PROPERTIES, AND TUNABLE DEVICES FROM ORDERED...
- Publication number 20250207297
- Publication date Jun 26, 2025
- Board of Regents, The University of Texas System
- Chonglin Chen
- C01 - INORGANIC CHEMISTRY
Information Patent Application
OVENS FOR NONLINEAR OPTICAL CRYSTALS AND METHOD OF USE
- Publication number 20250163612
- Publication date May 22, 2025
- IPG Photonics Corporation
- Alex YUSIM
- G02 - OPTICS
Information Patent Application
POST-TREATMENT OF LITHIUM TANTALATE SINGLE CRYSTAL AND METHOD FOR M...
- Publication number 20250146180
- Publication date May 8, 2025
- KOREA PHOTONICS TECHNOLOGY INSTITUTE
- Seon Hoon KIM
- C30 - CRYSTAL GROWTH
Information Patent Application
PHOTOCONDUCTIVE THIN FILMS WITH PBSE NANOSTRUCTURES
- Publication number 20250146170
- Publication date May 8, 2025
- Illinois Tool Works Inc.
- Richard S. Kim
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR THE FABRICATION OF P-TYPE Ga2O3 BY PHOSPHORUS ION IMPLAN...
- Publication number 20250137168
- Publication date May 1, 2025
- National Yang Ming Chiao Tung University
- Ray-Hua Horng
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR MANUFACTURING A MONOCRYSTALLINE SILICON SEMICONDUCTOR W...
- Publication number 20250129506
- Publication date Apr 24, 2025
- Siltronic AG
- Timo MUELLER
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...
- Publication number 20250132151
- Publication date Apr 24, 2025
- Sumitomo Chemical Company, Limited
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...
- Publication number 20250132155
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
EXTREME LARGE GRAIN (1 MM) LATERAL GROWTH OF CD(SE,TE) ALLOY THIN F...
- Publication number 20250101632
- Publication date Mar 27, 2025
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- David Scott ALBIN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...
- Publication number 20250087485
- Publication date Mar 13, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF PREPARING SILICON-ON-INSULATOR STRUCTURES USING EPITAXIA...
- Publication number 20250069945
- Publication date Feb 27, 2025
- GLOBALWAFERS CO., LTD.
- Qingmin Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PROCESSING CARBON-CONTAINED MONOCRYSTALLINE SUBSTRATE
- Publication number 20250059681
- Publication date Feb 20, 2025
- Disco Corporation
- Naoki MURAZAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON EPITAXIAL SUBSTRATE AND SILICON EPI...
- Publication number 20250051961
- Publication date Feb 13, 2025
- GlobalWafers Japan Co., Ltd.
- Takeshi SENDA
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Crystal Growth Device and Quality Control Method
- Publication number 20250027227
- Publication date Jan 23, 2025
- Winsheng Material Technology Co., Ltd.
- Yun-Fu Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
- Publication number 20250011968
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Shan-Hui Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...
- Publication number 20240417885
- Publication date Dec 19, 2024
- Pacific Innovations Pte. Ltd.
- Faouzi Zerrouk
- C30 - CRYSTAL GROWTH
Information Patent Application
CVD SINGLE CRYSTAL DIAMOND
- Publication number 20240417884
- Publication date Dec 19, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- Benjamin Simon TRUSCOTT
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20240401229
- Publication date Dec 5, 2024
- Rohm Co., Ltd.
- Keiju SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...
- Publication number 20240392476
- Publication date Nov 28, 2024
- SOITEC
- Ionut Radu
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE MATERIAL
- Publication number 20240359991
- Publication date Oct 31, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS
- Publication number 20240344239
- Publication date Oct 17, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MEASURING ETCHING AMOUNT, AND MEASUREMENT SYSTEM THEREFOR
- Publication number 20240328776
- Publication date Oct 3, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...
- Publication number 20240328032
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...
- Publication number 20240332366
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...
- Publication number 20240318352
- Publication date Sep 26, 2024
- SiCrystal GmbH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL DIAMOND COMPONENT AND METHOD FOR PRODUCING
- Publication number 20240309554
- Publication date Sep 19, 2024
- Element Six Technologies Limited
- Matthew Lee MARKHAM
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING ROLLS AND MEMBRANES OF SUBMICROMETRIC THICKNE...
- Publication number 20240304460
- Publication date Sep 12, 2024
- INSTITUTO SUPERIOR TECNICO
- Katharina LORENZ
- C30 - CRYSTAL GROWTH

Heat treatment

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Processed wafer and processing method thereof

Method for manufacturing SiC substrate

Aluminum nitride substrate manufacturing method, aluminum nitride s...

Method of heat-treating silicon wafer using lateral heat treatment...

Method of fabricating silicon carbide material by performing a firs...

Method for producing semiconductor wafers

Manufacture and repair of high temperature reinforced superconductors

Aluminum nitride crystals having low urbach energy and high transpa...

Processing chamber with annealing mini-environment

Method for producing a SiC seed crystal for growth of a SiC ingot b...

Method for manufacturing substrate for solar cell and substrate for...

Preparation method for ultrahigh-conductivity multilayer single-cry...

Fabrication of PBSE nanostructures by employing chemical bath depos...

Extreme large grain (1 mm) lateral growth of Cd(Se,Te) alloy thin f...

Methods for determining suitability of silicon substrates for epitaxy

Passivation of nonlinear optical crystals

Silicon wafer and manufacturing method of the same

Large diameter silicon carbide wafers

Manufacturing method for semiconductor silicon wafer

Reduced optical absorption for silicon carbide crystalline materials

Semiconductor wafer, radiation detection element, radiation detecto...

Method of processing a lithium tantalate and/or lithium niobate waf...

Silicon carbide magnetometer and associated material formation methods

Method for manufacturing silicon single crystal wafer and silicon s...

Semiconductor substrate manufacturing device applicable to large-di...

Crystal and substrate of conductive GaAs, and method for forming th...

Impurity control during formation of aluminum nitride crystals and...

SiC single crystal manufacturing method, SiC single crystal manufac...

Preparation and application of highly coherent diamond nitrogen vac...

Method for manufacturing substrate for solar cell and substrate for...

Patents Applicationslast 30 patents

Systems and Methods for Substituent Doping of Diamonds

Silicon Carbide Epitaxial Wafer and Preparation Method Therefor

TUNED MATERIALS, TUNED PROPERTIES, AND TUNABLE DEVICES FROM ORDERED...

OVENS FOR NONLINEAR OPTICAL CRYSTALS AND METHOD OF USE

POST-TREATMENT OF LITHIUM TANTALATE SINGLE CRYSTAL AND METHOD FOR M...

PHOTOCONDUCTIVE THIN FILMS WITH PBSE NANOSTRUCTURES

METHOD FOR THE FABRICATION OF P-TYPE Ga2O3 BY PHOSPHORUS ION IMPLAN...

PROCESS FOR MANUFACTURING A MONOCRYSTALLINE SILICON SEMICONDUCTOR W...

SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...

APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...

EXTREME LARGE GRAIN (1 MM) LATERAL GROWTH OF CD(SE,TE) ALLOY THIN F...

APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...

METHODS OF PREPARING SILICON-ON-INSULATOR STRUCTURES USING EPITAXIA...

METHOD OF PROCESSING CARBON-CONTAINED MONOCRYSTALLINE SUBSTRATE

METHOD OF MANUFACTURING SILICON EPITAXIAL SUBSTRATE AND SILICON EPI...

Silicon Carbide Crystal Growth Device and Quality Control Method

METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY

Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...

CVD SINGLE CRYSTAL DIAMOND

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF

METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...

SILICON CARBIDE MATERIAL

LARGE DIAMETER SILICON CARBIDE WAFERS

REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS

METHOD FOR MEASURING ETCHING AMOUNT, AND MEASUREMENT SYSTEM THEREFOR

SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...

METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...

SINGLE CRYSTAL DIAMOND COMPONENT AND METHOD FOR PRODUCING

PROCESS FOR PRODUCING ROLLS AND MEMBRANES OF SUBMICROMETRIC THICKNE...