Heating of the material to be evaporated

Industry

CPC
C30B23/066

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B23/00Single-crystal growth by condensing evaporated or sublimed material

Current Industry

C30B23/066Heating of the material to be evaporated

Industries

Patents Grantslast 30 patents

Information Patent Grant
SiC single crystal growth crucible, SiC single crystal manufacturin...
- Patent number 11,946,156
- Issue date Apr 2, 2024
- Resonac Corporation
- Yohei Fujikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,939,700
- Issue date Mar 26, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of synthesizing molybdenum oxychloride by reacting molybdenu...
- Patent number 11,939,231
- Issue date Mar 26, 2024
- JX Metals Corporation
- Hideyuki Takahashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods for crystal growth by replacing a sublimated target source...
- Patent number 11,926,922
- Issue date Mar 12, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal control for formation and processing of aluminum nitride
- Patent number 11,913,136
- Issue date Feb 27, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods for preparing a monolayer or few-layer crystalline black ph...
- Patent number 11,885,039
- Issue date Jan 30, 2024
- The Hong Kong Polytechnic University
- Jianhua Hao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal epitaxial layer having a rhombohedral lattice
- Patent number 11,885,040
- Issue date Jan 30, 2024
- UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA.
- Hyun Jung Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of silicon carbide ingot
- Patent number 11,859,306
- Issue date Jan 2, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for growing high-purity semi-insulating silico...
- Patent number 11,851,784
- Issue date Dec 26, 2023
- Fujian Beidian Material Technologies Co., Ltd.
- Huarong Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large, UV-transparent aluminum nitride single crystals
- Patent number 11,828,002
- Issue date Nov 28, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide seed crystal and method of manufacturing silicon ca...
- Patent number 11,821,105
- Issue date Nov 21, 2023
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growth crucible and single crystal growth method
- Patent number 11,814,749
- Issue date Nov 14, 2023
- Resonac Corporation
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide seed crystal and method of manufacturing the same,...
- Patent number 11,781,241
- Issue date Oct 10, 2023
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of producing SiC single crystal ingot
- Patent number 11,761,114
- Issue date Sep 19, 2023
- Resonac Corporation
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal sublimation growth apparatus
- Patent number 11,761,117
- Issue date Sep 19, 2023
- II-VI DELAWARE, INC.
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of single crystal growth by controlling the heating of a sou...
- Patent number 11,718,926
- Issue date Aug 8, 2023
- Hon Hai Precision Industry Co., Ltd.
- Chung-Yi Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible having an improved crystal growth base for manufacturing s...
- Patent number 11,708,646
- Issue date Jul 25, 2023
- Showa Denko K.K.
- Rimpei Kindaichi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
n-Type 4H—SiC single crystal substrate and method of producing n-ty...
- Patent number 11,655,561
- Issue date May 23, 2023
- Showa Denko K.K.
- Hiromasa Suo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible and SiC single crystal growth apparatus
- Patent number 11,643,749
- Issue date May 9, 2023
- Showa Denko K.K.
- Yohei Fujikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thermal control for formation and processing of aluminum nitride
- Patent number 11,578,425
- Issue date Feb 14, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride crystals having low urbach energy and high transpa...
- Patent number 11,555,256
- Issue date Jan 17, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing bulk silicon carbide
- Patent number 11,505,876
- Issue date Nov 22, 2022
- GTAT Corporation
- Roman V. Drachev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Suboxide molecular-beam epitaxy and related structures
- Patent number 11,462,402
- Issue date Oct 4, 2022
- Cornell University
- Patrick Vogt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growing apparatus and crucible having a main body portion a...
- Patent number 11,453,957
- Issue date Sep 27, 2022
- Showa Denko K.K.
- Rimpei Kindaichi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal growing apparatus and crucible having a main body portion a...
- Patent number 11,441,235
- Issue date Sep 13, 2022
- Showa Denko K.K.
- Rimpei Kindaichi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC single crystal manufacturing apparatus and structure having con...
- Patent number 11,427,927
- Issue date Aug 30, 2022
- Showa Denko K.K.
- Yohei Fujikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Stabilized, high-doped silicon carbide
- Patent number 11,371,163
- Issue date Jun 28, 2022
- Wolfspeed, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
High breakdown strength ferroelectric SrHfO3 materials
- Patent number 11,335,845
- Issue date May 17, 2022
- Alliance for Sustainable Energy, LLC
- Lauren Marie Garten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabrication of crystals using laser-accelerat...
- Patent number 11,236,437
- Issue date Feb 1, 2022
- INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- Patrizio Antici
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing ingot, raw material for ingot growth, and meth...
- Patent number 11,225,730
- Issue date Jan 18, 2022
- SENIC INC.
- Byung Kyu Jang
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER...
- Publication number 20240110275
- Publication date Apr 4, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Wolfgang BRAUN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240093408
- Publication date Mar 21, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL
- Publication number 20240068125
- Publication date Feb 29, 2024
- SEC CARBON, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240035201
- Publication date Feb 1, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...
- Publication number 20240011184
- Publication date Jan 11, 2024
- National University of Singapore
- Andrivo RUSYDI
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...
- Publication number 20240003054
- Publication date Jan 4, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
Improved Furnace Apparatus for Crystal Production
- Publication number 20230407519
- Publication date Dec 21, 2023
- Zadient Technologies SAS
- Kagan Ceran
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR PREPARING TWO-DIMENSIONAL BLACK PHOSPHORUS
- Publication number 20230357953
- Publication date Nov 9, 2023
- The Hong Kong Polytechnic University
- Jianhua HAO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES A...
- Publication number 20230349068
- Publication date Nov 2, 2023
- Board of Regents, The University of Texas System
- Manuel Quevedo Lopez
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS
- Publication number 20230332327
- Publication date Oct 19, 2023
- EBNER INDUSTRIEOFENBAU GMBH
- Robert EBNER
- C30 - CRYSTAL GROWTH
Information Patent Application
EFFUSION CELL WITH RETRACTABLE CRUCIBLE FOR MOLECULAR BEAM EPITAXY
- Publication number 20230287594
- Publication date Sep 14, 2023
- HUNAN SEMICOREPI SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Peng DU
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR HEATING MULTIPLE CRUCIBLES
- Publication number 20230203713
- Publication date Jun 29, 2023
- EBNER INDUSTRIEOFENBAU GMBH
- Robert EBNER
- C30 - CRYSTAL GROWTH
Information Patent Application
ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPA...
- Publication number 20230183883
- Publication date Jun 15, 2023
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR FORMING A LAYER WITH THE BASIC OF A PIEZOELECRIC MATERIA...
- Publication number 20230179165
- Publication date Jun 8, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Florian DUPONT
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVIC...
- Publication number 20230167580
- Publication date Jun 1, 2023
- Pallidus, Inc.
- Douglas Dukes
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MOD...
- Publication number 20230166972
- Publication date Jun 1, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
THERMAL CONTROL FOR FORMATION AND PROCESSING OF ALUMINUM NITRIDE
- Publication number 20230167584
- Publication date Jun 1, 2023
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF ENHANCING SILICON CARBIDE MONOCRYSTALLINE GROWTH YIELD
- Publication number 20230167579
- Publication date Jun 1, 2023
- NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- CHIH-WEI KUO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR SYNCHRONOUS GROWTH OF SILICON CARBIDE CRYS...
- Publication number 20230151511
- Publication date May 18, 2023
- SUZHOU UKING PHOTOELECTRIC TECHNOLOGY CO., LTD.
- Jianming CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL AND METHOD FOR SUPPRESSING...
- Publication number 20230083924
- Publication date Mar 16, 2023
- Shin-Etsu Chemical Co., Ltd.
- Norio Yamagata
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF SINGLE CRYSTAL GROWTH
- Publication number 20230059271
- Publication date Feb 23, 2023
- HON HAI PRECISION INDUSTRY CO., LTD.
- Chung-Yi CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEED CRYSTAL AND METHOD OF...
- Publication number 20220403546
- Publication date Dec 22, 2022
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS AND METHOD O...
- Publication number 20220205137
- Publication date Jun 30, 2022
- SHOWA DENKO K.K.
- Rimpei KINDAICHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBOXIDE MOLECULAR-BEAM EPITAXY AND RELATED STRUCTURES
- Publication number 20220122843
- Publication date Apr 21, 2022
- Cornell University
- Patrick Vogt
- C30 - CRYSTAL GROWTH
Information Patent Application
IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND...
- Publication number 20220074072
- Publication date Mar 10, 2022
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
VAPOR PHASE TRANSPORT SYSTEM AND METHOD FOR DEPOSITING PEROVSKITE S...
- Publication number 20220076948
- Publication date Mar 10, 2022
- Swift Solar Inc.
- Kevin Alexander Bush
- B65 - CONVEYING PACKING STORING HANDLING THIN OR FILAMENTARY MATERIAL
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE INGOT
- Publication number 20220049372
- Publication date Feb 17, 2022
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SIC SINGLE CRYSTAL(S) DOPED FROM GAS PHASE
- Publication number 20220049373
- Publication date Feb 17, 2022
- II-VI Delaware, Inc.
- Ilya Zwieback
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20220025549
- Publication date Jan 27, 2022
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE WAFER AND SEMICONDUCTOR STR...
- Publication number 20220025547
- Publication date Jan 27, 2022
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- H01 - BASIC ELECTRIC ELEMENTS

Heating of the material to be evaporated

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC single crystal growth crucible, SiC single crystal manufacturin...

Impurity control during formation of aluminum nitride crystals and...

Method of synthesizing molybdenum oxychloride by reacting molybdenu...

Methods for crystal growth by replacing a sublimated target source...

Thermal control for formation and processing of aluminum nitride

Methods for preparing a monolayer or few-layer crystalline black ph...

Single crystal epitaxial layer having a rhombohedral lattice

Manufacturing method of silicon carbide ingot

Apparatus and method for growing high-purity semi-insulating silico...

Large, UV-transparent aluminum nitride single crystals

Silicon carbide seed crystal and method of manufacturing silicon ca...

Single crystal growth crucible and single crystal growth method

Silicon carbide seed crystal and method of manufacturing the same,...

Method of producing SiC single crystal ingot

SiC single crystal sublimation growth apparatus

Method of single crystal growth by controlling the heating of a sou...

Crucible having an improved crystal growth base for manufacturing s...

n-Type 4H—SiC single crystal substrate and method of producing n-ty...

Crucible and SiC single crystal growth apparatus

Thermal control for formation and processing of aluminum nitride

Aluminum nitride crystals having low urbach energy and high transpa...

Method for producing bulk silicon carbide

Suboxide molecular-beam epitaxy and related structures

Crystal growing apparatus and crucible having a main body portion a...

Crystal growing apparatus and crucible having a main body portion a...

SiC single crystal manufacturing apparatus and structure having con...

Stabilized, high-doped silicon carbide

High breakdown strength ferroelectric SrHfO3 materials

Method and system for fabrication of crystals using laser-accelerat...

Method for producing ingot, raw material for ingot growth, and meth...

Patents Applicationslast 30 patents

METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER...

Method and Device for Producing a SiC Solid Material

SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL

Method and Device for Producing a SiC Solid Material

HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...

Improved Furnace Apparatus for Crystal Production

METHODS FOR PREPARING TWO-DIMENSIONAL BLACK PHOSPHORUS

METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES A...

DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS

EFFUSION CELL WITH RETRACTABLE CRUCIBLE FOR MOLECULAR BEAM EPITAXY

APPARATUS FOR HEATING MULTIPLE CRUCIBLES

ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPA...

METHOD FOR FORMING A LAYER WITH THE BASIC OF A PIEZOELECRIC MATERIA...

SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVIC...

MANUFACTURING METHOD OF MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MOD...

THERMAL CONTROL FOR FORMATION AND PROCESSING OF ALUMINUM NITRIDE

METHOD OF ENHANCING SILICON CARBIDE MONOCRYSTALLINE GROWTH YIELD

METHOD AND APPARATUS FOR SYNCHRONOUS GROWTH OF SILICON CARBIDE CRYS...

METHOD FOR PRODUCING SIC SINGLE CRYSTAL AND METHOD FOR SUPPRESSING...

METHOD OF SINGLE CRYSTAL GROWTH

METHOD OF MANUFACTURING SILICON CARBIDE SEED CRYSTAL AND METHOD OF...

SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS AND METHOD O...

SUBOXIDE MOLECULAR-BEAM EPITAXY AND RELATED STRUCTURES

IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND...

VAPOR PHASE TRANSPORT SYSTEM AND METHOD FOR DEPOSITING PEROVSKITE S...

MANUFACTURING METHOD OF SILICON CARBIDE INGOT

SIC SINGLE CRYSTAL(S) DOPED FROM GAS PHASE

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

MANUFACTURING METHOD OF SILICON CARBIDE WAFER AND SEMICONDUCTOR STR...