Heating of the material to be evaporated

Industry

CPC
C30B23/066

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B23/00Single-crystal growth by condensing evaporated or sublimed material

Current Industry

C30B23/066Heating of the material to be evaporated

Industries

Patents Grantslast 30 patents

Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase transport systems for depositing perovskite semiconductors
- Patent number 12,046,467
- Issue date Jul 23, 2024
- Swift Solar Inc.
- Kevin Alexander Bush
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epi-growth apparatus of separate chamber type
- Patent number 12,000,061
- Issue date Jun 4, 2024
- T.O.S Co., Ltd.
- Bum Ho Choi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of silicon carbide wafer and semiconductor str...
- Patent number 11,987,902
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal growth crucible, SiC single crystal manufacturin...
- Patent number 11,946,156
- Issue date Apr 2, 2024
- Resonac Corporation
- Yohei Fujikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,939,700
- Issue date Mar 26, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of synthesizing molybdenum oxychloride by reacting molybdenu...
- Patent number 11,939,231
- Issue date Mar 26, 2024
- JX Metals Corporation
- Hideyuki Takahashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods for crystal growth by replacing a sublimated target source...
- Patent number 11,926,922
- Issue date Mar 12, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal control for formation and processing of aluminum nitride
- Patent number 11,913,136
- Issue date Feb 27, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods for preparing a monolayer or few-layer crystalline black ph...
- Patent number 11,885,039
- Issue date Jan 30, 2024
- The Hong Kong Polytechnic University
- Jianhua Hao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal epitaxial layer having a rhombohedral lattice
- Patent number 11,885,040
- Issue date Jan 30, 2024
- UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA.
- Hyun Jung Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of silicon carbide ingot
- Patent number 11,859,306
- Issue date Jan 2, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for growing high-purity semi-insulating silico...
- Patent number 11,851,784
- Issue date Dec 26, 2023
- Fujian Beidian Material Technologies Co., Ltd.
- Huarong Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large, UV-transparent aluminum nitride single crystals
- Patent number 11,828,002
- Issue date Nov 28, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide seed crystal and method of manufacturing silicon ca...
- Patent number 11,821,105
- Issue date Nov 21, 2023
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growth crucible and single crystal growth method
- Patent number 11,814,749
- Issue date Nov 14, 2023
- Resonac Corporation
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide seed crystal and method of manufacturing the same,...
- Patent number 11,781,241
- Issue date Oct 10, 2023
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of producing SiC single crystal ingot
- Patent number 11,761,114
- Issue date Sep 19, 2023
- Resonac Corporation
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal sublimation growth apparatus
- Patent number 11,761,117
- Issue date Sep 19, 2023
- II-VI DELAWARE, INC.
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of single crystal growth by controlling the heating of a sou...
- Patent number 11,718,926
- Issue date Aug 8, 2023
- Hon Hai Precision Industry Co., Ltd.
- Chung-Yi Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible having an improved crystal growth base for manufacturing s...
- Patent number 11,708,646
- Issue date Jul 25, 2023
- Showa Denko K.K.
- Rimpei Kindaichi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
n-Type 4H—SiC single crystal substrate and method of producing n-ty...
- Patent number 11,655,561
- Issue date May 23, 2023
- Showa Denko K.K.
- Hiromasa Suo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible and SiC single crystal growth apparatus
- Patent number 11,643,749
- Issue date May 9, 2023
- Showa Denko K.K.
- Yohei Fujikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thermal control for formation and processing of aluminum nitride
- Patent number 11,578,425
- Issue date Feb 14, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride crystals having low urbach energy and high transpa...
- Patent number 11,555,256
- Issue date Jan 17, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing bulk silicon carbide
- Patent number 11,505,876
- Issue date Nov 22, 2022
- GTAT Corporation
- Roman V. Drachev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Suboxide molecular-beam epitaxy and related structures
- Patent number 11,462,402
- Issue date Oct 4, 2022
- Cornell University
- Patrick Vogt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growing apparatus and crucible having a main body portion a...
- Patent number 11,453,957
- Issue date Sep 27, 2022
- Showa Denko K.K.
- Rimpei Kindaichi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal growing apparatus and crucible having a main body portion a...
- Patent number 11,441,235
- Issue date Sep 13, 2022
- Showa Denko K.K.
- Rimpei Kindaichi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC single crystal manufacturing apparatus and structure having con...
- Patent number 11,427,927
- Issue date Aug 30, 2022
- Showa Denko K.K.
- Yohei Fujikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20240401235
- Publication date Dec 5, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...
- Publication number 20240328030
- Publication date Oct 3, 2024
- Hexatech, Inc.
- Rafael Dalmau
- C30 - CRYSTAL GROWTH
Information Patent Application
Sublimation System And Method Of Growing At Least One Single Crystal
- Publication number 20240309546
- Publication date Sep 19, 2024
- SiCrystal GmbH
- Philipp SCHUH
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE-CRYSTAL GROWTH APPARATUS
- Publication number 20240295047
- Publication date Sep 5, 2024
- SEC CARBON, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FABRICATING SILICON CARBIDE INGOT
- Publication number 20240271322
- Publication date Aug 15, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...
- Publication number 20240263346
- Publication date Aug 8, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL EXPANSION APPARATUS, SILICON CARBIDE CRYSTA...
- Publication number 20240263345
- Publication date Aug 8, 2024
- Winsheng Material Technology (WMT) Co., Ltd.
- Chi-Hang Hung
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...
- Publication number 20240263347
- Publication date Aug 8, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND APPARATUSES FOR CRYSTAL GROWTH
- Publication number 20240209543
- Publication date Jun 27, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYER TRANSFER PROCESS
- Publication number 20240188444
- Publication date Jun 6, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Florian DUPONT
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER...
- Publication number 20240110275
- Publication date Apr 4, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Wolfgang BRAUN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240093408
- Publication date Mar 21, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL
- Publication number 20240068125
- Publication date Feb 29, 2024
- SEC CARBON, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240035201
- Publication date Feb 1, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...
- Publication number 20240011184
- Publication date Jan 11, 2024
- National University of Singapore
- Andrivo RUSYDI
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...
- Publication number 20240003054
- Publication date Jan 4, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
Improved Furnace Apparatus for Crystal Production
- Publication number 20230407519
- Publication date Dec 21, 2023
- Zadient Technologies SAS
- Kagan Ceran
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR PREPARING TWO-DIMENSIONAL BLACK PHOSPHORUS
- Publication number 20230357953
- Publication date Nov 9, 2023
- The Hong Kong Polytechnic University
- Jianhua HAO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES A...
- Publication number 20230349068
- Publication date Nov 2, 2023
- Board of Regents, The University of Texas System
- Manuel Quevedo Lopez
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS
- Publication number 20230332327
- Publication date Oct 19, 2023
- EBNER INDUSTRIEOFENBAU GMBH
- Robert EBNER
- C30 - CRYSTAL GROWTH
Information Patent Application
EFFUSION CELL WITH RETRACTABLE CRUCIBLE FOR MOLECULAR BEAM EPITAXY
- Publication number 20230287594
- Publication date Sep 14, 2023
- HUNAN SEMICOREPI SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Peng DU
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR HEATING MULTIPLE CRUCIBLES
- Publication number 20230203713
- Publication date Jun 29, 2023
- EBNER INDUSTRIEOFENBAU GMBH
- Robert EBNER
- C30 - CRYSTAL GROWTH
Information Patent Application
ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPA...
- Publication number 20230183883
- Publication date Jun 15, 2023
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR FORMING A LAYER WITH THE BASIC OF A PIEZOELECRIC MATERIA...
- Publication number 20230179165
- Publication date Jun 8, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Florian DUPONT
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVIC...
- Publication number 20230167580
- Publication date Jun 1, 2023
- Pallidus, Inc.
- Douglas Dukes
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MOD...
- Publication number 20230166972
- Publication date Jun 1, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
THERMAL CONTROL FOR FORMATION AND PROCESSING OF ALUMINUM NITRIDE
- Publication number 20230167584
- Publication date Jun 1, 2023
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF ENHANCING SILICON CARBIDE MONOCRYSTALLINE GROWTH YIELD
- Publication number 20230167579
- Publication date Jun 1, 2023
- NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- CHIH-WEI KUO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR SYNCHRONOUS GROWTH OF SILICON CARBIDE CRYS...
- Publication number 20230151511
- Publication date May 18, 2023
- SUZHOU UKING PHOTOELECTRIC TECHNOLOGY CO., LTD.
- Jianming CHEN
- C30 - CRYSTAL GROWTH

Heating of the material to be evaporated

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Large diameter silicon carbide wafers

Vapor phase transport systems for depositing perovskite semiconductors

Epi-growth apparatus of separate chamber type

Manufacturing method of silicon carbide wafer and semiconductor str...

SiC single crystal growth crucible, SiC single crystal manufacturin...

Impurity control during formation of aluminum nitride crystals and...

Method of synthesizing molybdenum oxychloride by reacting molybdenu...

Methods for crystal growth by replacing a sublimated target source...

Thermal control for formation and processing of aluminum nitride

Methods for preparing a monolayer or few-layer crystalline black ph...

Single crystal epitaxial layer having a rhombohedral lattice

Manufacturing method of silicon carbide ingot

Apparatus and method for growing high-purity semi-insulating silico...

Large, UV-transparent aluminum nitride single crystals

Silicon carbide seed crystal and method of manufacturing silicon ca...

Single crystal growth crucible and single crystal growth method

Silicon carbide seed crystal and method of manufacturing the same,...

Method of producing SiC single crystal ingot

SiC single crystal sublimation growth apparatus

Method of single crystal growth by controlling the heating of a sou...

Crucible having an improved crystal growth base for manufacturing s...

n-Type 4H—SiC single crystal substrate and method of producing n-ty...

Crucible and SiC single crystal growth apparatus

Thermal control for formation and processing of aluminum nitride

Aluminum nitride crystals having low urbach energy and high transpa...

Method for producing bulk silicon carbide

Suboxide molecular-beam epitaxy and related structures

Crystal growing apparatus and crucible having a main body portion a...

Crystal growing apparatus and crucible having a main body portion a...

SiC single crystal manufacturing apparatus and structure having con...

Patents Applicationslast 30 patents

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

LARGE DIAMETER SILICON CARBIDE WAFERS

SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...

Sublimation System And Method Of Growing At Least One Single Crystal

SIC SINGLE-CRYSTAL GROWTH APPARATUS

METHOD OF FABRICATING SILICON CARBIDE INGOT

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...

SILICON CARBIDE CRYSTAL EXPANSION APPARATUS, SILICON CARBIDE CRYSTA...

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...

METHODS AND APPARATUSES FOR CRYSTAL GROWTH

LAYER TRANSFER PROCESS

METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER...

Method and Device for Producing a SiC Solid Material

SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL

Method and Device for Producing a SiC Solid Material

HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...

Improved Furnace Apparatus for Crystal Production

METHODS FOR PREPARING TWO-DIMENSIONAL BLACK PHOSPHORUS

METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES A...

DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS

EFFUSION CELL WITH RETRACTABLE CRUCIBLE FOR MOLECULAR BEAM EPITAXY

APPARATUS FOR HEATING MULTIPLE CRUCIBLES

ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPA...

METHOD FOR FORMING A LAYER WITH THE BASIC OF A PIEZOELECRIC MATERIA...

SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVIC...

MANUFACTURING METHOD OF MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MOD...

THERMAL CONTROL FOR FORMATION AND PROCESSING OF ALUMINUM NITRIDE

METHOD OF ENHANCING SILICON CARBIDE MONOCRYSTALLINE GROWTH YIELD

METHOD AND APPARATUS FOR SYNCHRONOUS GROWTH OF SILICON CARBIDE CRYS...