Heterojunction transistors [HBT]

Industry

CPC
H01L29/66242

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66242Heterojunction transistors [HBT]

Industries

Patents Grantslast 30 patents

Information Patent Grant
Methods of manufacture of advanced wafer bonded heterojunction bipo...
- Patent number 12,183,812
- Issue date Dec 31, 2024
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 12,170,313
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 12,142,673
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier modules including semiconductor resistor and tantal...
- Patent number 12,143,077
- Issue date Nov 12, 2024
- Skyworks Solutions, Inc.
- Peter J. Zampardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Base silicide on monocrystalline base structures
- Patent number 12,132,093
- Issue date Oct 29, 2024
- NXP USA, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor integration on a silicon-on-insulator substrate
- Patent number 12,113,070
- Issue date Oct 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with extrinsic base region and method of fabri...
- Patent number 12,107,143
- Issue date Oct 1, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe HBT with graphene extrinsic base and methods
- Patent number 12,094,873
- Issue date Sep 17, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary bipolar junction transistor
- Patent number 12,078,551
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zi-Ang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant profile control in heterojunction bipolar transistor (HBT)
- Patent number 12,068,402
- Issue date Aug 20, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal Current Bipolar Transistor with Silicon-Germanium base
- Patent number 12,062,699
- Issue date Aug 13, 2024
- University of Zagreb, Faculty of Electrical Engineering and Computing
- Tomislav Suligoj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 12,046,659
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible transistors with near-junction heat dissipation
- Patent number 11,996,473
- Issue date May 28, 2024
- Wisconsin Alumni Research Foundation
- Zhenqiang Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral heterojunction bipolar transistor with emitter and/or colle...
- Patent number 11,990,535
- Issue date May 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistors with multilayer collectors
- Patent number 11,990,536
- Issue date May 21, 2024
- NXP B.V.
- Johannes Josephus Theodorus Marinus Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and power amplifier
- Patent number 11,990,537
- Issue date May 21, 2024
- WIN SEMICONDUCTORS CORP.
- Chih-Yang Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a diode
- Patent number 11,984,360
- Issue date May 14, 2024
- STMicroelectronics (Crolles 2) SAS
- Gregory Avenier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with thermal conductor
- Patent number 11,942,534
- Issue date Mar 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with collector contact
- Patent number 11,935,927
- Issue date Mar 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with self-aligned asymmetric spacer
- Patent number 11,935,928
- Issue date Mar 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based lateral bipolar junction transistor and method
- Patent number 11,888,031
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors
- Patent number 11,881,523
- Issue date Jan 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with stress material for improve...
- Patent number 11,876,123
- Issue date Jan 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors
- Patent number 11,869,958
- Issue date Jan 9, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 11,855,195
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 11,855,196
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with monocrystalline base structures
- Patent number 11,855,173
- Issue date Dec 26, 2023
- NXP USA, INC.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including a portion of a base layer in...
- Patent number 11,848,374
- Issue date Dec 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor including a stress layer and me...
- Patent number 11,837,653
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making a semiconductor device
- Patent number 11,817,486
- Issue date Nov 14, 2023
- NXP USA, INC.
- James Albert Kirchgessner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20250015128
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20250006824
- Publication date Jan 2, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES
- Publication number 20240405105
- Publication date Dec 5, 2024
- Analog Devices, Inc.
- F. Jacob Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20240405106
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR
- Publication number 20240369421
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zi-Ang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240332201
- Publication date Oct 3, 2024
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HBT AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240304707
- Publication date Sep 12, 2024
- NXP B.V.
- Johannes Josephus Theodorus Marinus Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SILICON BIPOLAR JUNCTION TRANSISTOR, AND...
- Publication number 20240234552
- Publication date Jul 11, 2024
- NXP B.V.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LATERAL BASE LINK REGION
- Publication number 20240204052
- Publication date Jun 20, 2024
- NXP B.V.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRY...
- Publication number 20240204086
- Publication date Jun 20, 2024
- NXP B.V.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH A CUT STRESS LINER
- Publication number 20240170561
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS
- Publication number 20240172455
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD
- Publication number 20240162329
- Publication date May 16, 2024
- STMicroelectronics (Crolles 2) SAS
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A TRANSISTOR WITH A CONDUCTIVITY DOPED BASE STRU...
- Publication number 20240079473
- Publication date Mar 7, 2024
- NXP USA, Inc.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...
- Publication number 20240030308
- Publication date Jan 25, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Nanocomposite Semiconductors
- Publication number 20240014263
- Publication date Jan 11, 2024
- The Government of the United States of America, as represented by the Secreta...
- Boris N. Feigelson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20240006517
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20230411508
- Publication date Dec 21, 2023
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL CURRENT BIPOLAR TRANSISTOR WITH SILICON-GERMANIUM BASE
- Publication number 20230395666
- Publication date Dec 7, 2023
- University of Zagreb, Faculty of Electrical Engineering and Computing
- Tomislav Suligoj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INTEGRATION ON A SILICON-ON-INSULATOR SUBSTRATE
- Publication number 20230395607
- Publication date Dec 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BASE SILICIDE ON MONOCRYSTALLINE BASE STRUCTURES
- Publication number 20230395692
- Publication date Dec 7, 2023
- NXP USA, Inc.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20230369474
- Publication date Nov 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20230369473
- Publication date Nov 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR MIXED GROUP V PRECURSOR PROCESS
- Publication number 20230326743
- Publication date Oct 12, 2023
- IQE plc
- Matthew GEEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SILICON DISLOCATION DEFECTS FROM DEEP SI TRENCH INTEGRATION
- Publication number 20230298946
- Publication date Sep 21, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20230299132
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230299174
- Publication date Sep 21, 2023
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH THERMAL CONDUCTOR
- Publication number 20230290868
- Publication date Sep 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH SELF-ALIGNED ASYMMETRIC SPACER
- Publication number 20230268401
- Publication date Aug 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE WITH COLLECTOR ON POLYCRYSTALLINE ISOL...
- Publication number 20230223463
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS

Heterojunction transistors [HBT]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of manufacture of advanced wafer bonded heterojunction bipo...

Heterojunction bipolar transistor with buried trap rich isolation r...

Transistor with wrap-around extrinsic base

Power amplifier modules including semiconductor resistor and tantal...

Base silicide on monocrystalline base structures

Transistor integration on a silicon-on-insulator substrate

Semiconductor device with extrinsic base region and method of fabri...

SiGe HBT with graphene extrinsic base and methods

Complementary bipolar junction transistor

Dopant profile control in heterojunction bipolar transistor (HBT)

Horizontal Current Bipolar Transistor with Silicon-Germanium base

Semiconductor structure and manufacturing method thereof

Flexible transistors with near-junction heat dissipation

Lateral heterojunction bipolar transistor with emitter and/or colle...

Bipolar transistors with multilayer collectors

Heterojunction bipolar transistor and power amplifier

Method for producing a diode

Bipolar transistor with thermal conductor

Bipolar transistor with collector contact

Bipolar transistor with self-aligned asymmetric spacer

Fin-based lateral bipolar junction transistor and method

Heterojunction bipolar transistors

Heterojunction bipolar transistors with stress material for improve...

Heterojunction bipolar transistors

Transistor with wrap-around extrinsic base

Transistor with wrap-around extrinsic base

Transistor with monocrystalline base structures

Bipolar junction transistors including a portion of a base layer in...

Lateral bipolar junction transistor including a stress layer and me...

Semiconductor device and method of making a semiconductor device

Patents Applicationslast 30 patents

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES

DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SIGE HBT AND METHODS OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING A SILICON BIPOLAR JUNCTION TRANSISTOR, AND...

SEMICONDUCTOR DEVICE WITH LATERAL BASE LINK REGION

SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRY...

HETEROJUNCTION BIPOLAR TRANSISTORS WITH A CUT STRESS LINER

ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS

MANUFACTURING METHOD

METHOD FOR FORMING A TRANSISTOR WITH A CONDUCTIVITY DOPED BASE STRU...

SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...

Bipolar Nanocomposite Semiconductors

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

HORIZONTAL CURRENT BIPOLAR TRANSISTOR WITH SILICON-GERMANIUM BASE

TRANSISTOR INTEGRATION ON A SILICON-ON-INSULATOR SUBSTRATE

BASE SILICIDE ON MONOCRYSTALLINE BASE STRUCTURES

HETEROJUNCTION BIPOLAR TRANSISTORS

HETEROJUNCTION BIPOLAR TRANSISTORS

METHOD AND SYSTEM FOR MIXED GROUP V PRECURSOR PROCESS

REDUCED SILICON DISLOCATION DEFECTS FROM DEEP SI TRENCH INTEGRATION

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

BIPOLAR TRANSISTOR WITH THERMAL CONDUCTOR

BIPOLAR TRANSISTOR WITH SELF-ALIGNED ASYMMETRIC SPACER

BIPOLAR TRANSISTOR STRUCTURE WITH COLLECTOR ON POLYCRYSTALLINE ISOL...